• 한국지구물리탐사학회:학술대회논문집
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• 한국지구물리탐사학회 2004년도 대한지구물리학회.한국지구물리탐사학회 공동학술대회 초록집
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• pp.165-169
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• 2004

Marine magnetic survey were carried out at Sokotra Basin offshore Korea between latitudes $31^{\circ}$ 42'32' N and $32^{\circ}$ 46'29' N, and longitudes $123^{\circ}$ 56'26" E and $125^{\circ}$ 49'16" E in order to estimate the depth of basement complex and as well as to configure it surface and produce the thickness of sedimentary sequence at the study area. Two methods have been used for depth estimation and basement configuration: the power spectrum and the 3-D analytical signal. The estimated depths resulted from the power spectrum method range from 1.4 km to 6.0 km for deep sources (basement troughs), and from 0.3 km to 1.75 km for shallow source (basement peaks). An isopach map was prepared for estimating the thickness of the sedimentary sequence at the study area; it ranges from 1.2 to 4.66 km. The estimated depths resulted from the analytic signal method range from 1.0 to 6 km. A basement configuration map was constructed for the study area in the basin. They show a well agreement with the geology of the study area.

• JSTS:Journal of Semiconductor Technology and Science
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• 제14권6호
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• pp.712-717
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• 2014

The performance of npn SiGe HBT on thin film SOI is investigated at 32 nm technology node by applying body bias. An n-well is created underneath thin BOX to isolate the body biased SOI HBT from SOI CMOS. The results show that the HBT voltage gain and power gain can be programmed by applying body bias to the n-well. This HBT can be used in variable gain amplifiers that are widely used in the receiver chain of RF systems. The HBT is compatible with 32 nm FDSOI technology having 10 nm film thickness and 30 nm BOX thickness. As the breakdown voltage increases by applying the body bias, the SOI HBT with 3 V $V_{CE}$ has very high $f_tBV_{CEO}$ product (839 GHzV). The self heating performance of the proposed SOI HBT is studied. The high voltage gain and power gain (60 dB) of this HBT will be useful in designing analog/RF systems which cannot be achieved using 32 nm SOI CMOS (usually voltage gain is in the range of 10-20 dB).

• 열처리공학회지
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• 제3권1호
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• pp.1-7
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• 1990

To investigate the influence of r.f. power and electrode distance on the TiN deposition, TiN films were deposited onto STC3, STD11 steel and Si-wafer from gas mixtures of $TiC_4/N_2/H_2$ using the radio frequency plasma assisted chemical vapor deposition. The crystallinity of TiN film could be improved by the increase of r.f. power and the decrease of electrode distance. The TiN coated layer contains chlorine, its content were decreased with increasing r.f. power as well as decreasing electrode distance. And the thickness of deposited TiN was largely affected by r.f. power and electrode distance. The hardness of deposited TiN reached a maximum value of about Hv 2,000.

• 한국축산식품학회지
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• 제39권5호
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• pp.756-767
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• 2019

This study aimed to evaluate the effect of doneness on the microbial, nutritional, and quality characteristics of 1.5 cm- and 2.0 cm-thick pork neck steaks. Pork neck meat was obtained within 24 h after slaughtering, cut into 1.5 cm- and 2.0 cm-thick slices (n=5), packed in LLD-PE wrap, and stored at $4{\pm}2^{\circ}C$ for 7-10 days until aerobic plate counts (APC) reach 5.51-6.50 Log CFU/g. Then, the pork meat was cooked on a frying pan till it was medium-rare, medium, or well-done. The microbial inhibition rates of the 1.5 cm- and 2.0 cm-thick steak in medium-rare state were 58.26% and 51.70%, respectively, whereas it was 100% for medium-done pork steak of either thickness. The total calories of the 1.5 cm- and 2.0 cm-thick well-done pork steaks were 643.61 kcal/100 g and 675.00 kcal/100 g, respectively, which was higher than that in medium-rare and medium-done steaks. The retention ratios for Fe and K in the well-done steak were significantly lower than those in the medium and medium-rare steak of either thickness (p<0.05). The shear force of the medium-rare and medium steak did not differ, whereas that of the well-done steak was significantly higher than that of the medium-rare steak of either thickness (p<0.05). We observed that the well-done pork steak had tough texture, low mineral content, and high calories. Therefore, consumption of medium and medium-rare pork is more beneficial than that of well-done pork.

• 전자공학회논문지A
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• 제31A권3호
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• pp.46-52
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• 1994

We investigated theoretically the current-voltage characteristics of resonant tunneling diodes with a single quantum well structure. using a self-consistent method. This method is a numerical analysis which is able to include the effects of the undoped spacer layer and the band bending by charge accumulation and depletion on the contact layers which have not been considered in the flat-band model reported by Esaki. so that it is better suited to explain experimental results. The structure used is an $AL_{0.5}Ga_{0.5}AS/GaAs/Al_{0.5}Ga_{0.5}AS$ single quantum well. In this work. we estimate the theoretical current-voltage characteristics of the same structure, and then, the dependence of the current-voltage curves on the thickness of undoped spacer layers sandwiched between the barrier and highly n-doped GaAs contact layer.

• 멤브레인
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• 제14권1호
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• pp.57-65
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• 2004

PDMS (polydimethylsiloxane) 복합막을 통한 기체분리 공정에서 다공성 지지체의 투과저항과 PDMS 코팅두께가 에틸렌/질소의 분리성능(투과도, 선택도)에 미치는 영향에 관하여 조사하였다. 이를 위해 Pinnau 등이 제시한 복합막 투과저항 모델이론식〔1〕이 사용되었다. 지지체의 투과도 또는 투과저항은 PES (polyethersulfone)/NMP(N-methyl-2-pyrrolidone) 고분자 용액의 농도를 변화시키면서 조절하였다. 복합막은 PES 지지체 위에 n-hexane에 녹인 2액형 PDMS 용액을 spin coater를 사용해 코팅하여 제조하였다. 선택층의 코팅 두께는 spin coater의 회전속도를 통해 조절하였다. 투과기체 분리특성은 단일기체 투과도 측정 장치를 통해 조사하였으며, 지지체 및 복합막의 단면구조 및 코팅두께는 SEM (scanning electron microscope)을 통하여 확인하였다 얻어진 실험결과는 복합막의 투과저항모델의 이론식과 매우 잘 일치함을 확인 할 수 있었다. 에틸렌/질소의 분리에 있어 PDMS 막 고유의 선택도를 얻기 위해서는 지지체의 투과저항과 코팅층의 최적화가 중요함을 확인하였다.

• PNF and Movement
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• 제13권2호
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• pp.103-109
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• 2015

Purpose: Abdominal breathing exercises are recommended to activate the breathing muscles and the pelvic floor muscles, as well as to increase postural alignment during exhalation. The purpose of this study was to clarify the effect of improving abdominal muscle strength on menstrual pain in women in their twenties using abdominal breathing exercises. Method: In this study, 32 female university students were included as the subjects. The subjects were divided into two groups based on the area of menstrual pain: lumbar pain (n=16) and lower abdomen pain (n=16). The abdominal breathing positions were divided into two positions, which included a hook lying position and hip and knee flexions at $90^{\circ}$ in the supine position. Exercises were used to strengthen the abdominal muscles during exhalation. Four sets of the exercises were completed three times a week over the course of eight weeks. The degree of pain was measured using the Numeric Rating Scale (NRS). Muscle thickness was measured using an ultrasound. Result: The thickness of the transverse abdominis (TrA) and internal oblique (IO) increased in the lower abdomen pain group. However, thickness of the external oblique (EO) did not increased following abdominal breathing. No significant difference in posture was identified in the lower abdomen group. TrA thickness increased significantly in the lumbar pain group. However, thickness did not increase significantly in the lumbar pain group. In addition, the lumbar pain group experienced no significant effects on posture. IO thickness increased following hip and knee flexions at $90^{\circ}$ in the lumbar pain group. Menstrual pain decreased following intervention in both groups. There was no significant difference in the degree of pain reduction between both groups. Conclusion: As examples of alternative medicine, abdominal breathing exercises may be effective in decreasing menstrual pain.

• 대한통합의학회지
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• 제11권1호
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• pp.149-157
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• 2023

Purpose : Genu varum is a condition characterized by a wider than normal gap between. This may be due to muscle weakness caused by poor posture, lifestyle, or lack of exercise. This study aimed to compare the effects of ball-based squats and narrow squats on muscle thickness, Q-angle, and the gap between the knees, in order to assess the potential for improving this condition. Methods : Twenty six adult participants with genu varum were randomly assigned to either a ball-based squat group (n=13) or a narrow squats group (n=13). Both groups performed their respective exercises three times weekly for 4 weeks. The data was analyzed using paired t-tests to compare pre- and post- intervention measurements within each group, and independent t-test was used to compare the two groups. Results : Both groups showed significant improvement in the thickness of the vastus lateralis and medialis, and rectus femoris muscles, as well as a significant decrease in the gap between the knees (p<.05). However, there was no significant difference in Q-angle variation between the two group. Furthermore, there was no significant differences in the Q-angle, gap between the knees, and muscle thickness variation between both groups. Conclusion : The results suggest that both ball-based squats and narrow squats are effective in improving muscle thickness and reducing the gap between the knees in adults with genu varum. However, there was no significant difference between the two types of squats in terms of their effects on the Q-angle. These findings highlight the potential for exercise interventions to address this common postural issue.

• Journal of Korean Vacuum Science & Technology
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• 제4권1호
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• pp.23-26
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• 2000

We have fabricated by metal organic chemical vapor deposition (MOCVD) In$\_$0.13/Ga$\_$0.87/N/GaN multiple quantum well (MQW) with thickness as thin as 10 A and barriers also of th same width on (0001) sapphire substrate. We have investigated this thin MQW by steady-state and time-resolved photoluminescence(PL) in picosecond time scale in a wide temperature range from 10 to 290 K. In the PL at 10 K, we observed a broad peak at 3.134 eV which was attributed to the quantum well emission of InGaN. The full width at half maximum (FWHM) of this peak was 129 meV at 10 K and its broadening at low temperatures was considered to be due to compositional fluctuations and interfacial disorder in the alloy. The narrow width of the quantum well was mainly responsible for the broadening of the emission linewidth. We also observed an intense and sharp peak at 3.471 eV of GaN barrier. From the temperature dependent PL measurements, the activation energy of the InGaN quantum well emision peak was estimated to be 69 meV. The lifetime of the quantum well emission was found to be 720 ps at 10 K, which was explained in terms of the exciton localization arising from potential fluctuations.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.345-346
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• 2013

InGaN material is being studied increasingly as a prospective material for solar cells. One of the merits for solar cell applications is that the band gap energy can be engineered from 0.7 eV for InN to 3.4 eV for GaN by varying of indium composition, which covers almost of solar spectrum from UV to IR. It is essential for better cell efficiency to improve not only the crystalline quality of the epitaxial layers but also fabrication of the solar cells. Fabrication includes transparent top electrodes and surface texturing which will improve the carrier extraction. Surface texturing is one of the most employed methods to enhance the extraction efficiency in LED fabrication and can be formed on a p-GaN surface, on an N-face of GaN, and even on an indium tin oxide (ITO) layer. Surface texturing method has also been adopted in InGaN-based solar cells and proved to enhance the efficiency. Since the texturing by direct etching of p-GaN, however, was known to induce the damage and result in degraded electrical properties, texturing has been studied widely on ITO layers. However, it is important to optimize the ITO thickness in Solar Cells applications since the reflectance is fluctuated by ITO thickness variation resulting in reduced light extraction at target wavelength. ITO texturing made by wet etching or dry etching was also revealed to increased series resistance in ITO film. In this work, we report a new way of texturing by deposition of thickness-optimized ITO films on ITO nano dots, which can further reduce the reflectance as well as electrical degradation originated from the ITO etching process.