• Fibers and Polymers
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• v.6 no.2
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• pp.139-145
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• 2005

The paper reports the physical and mechanical properties of hand-woven carpets, which have been put under static force. Two groups of wool fibres, from two parts of Iran, were prepared to spin pile yams for the carpets. Each group of the fibres included both conventional and tanned wool. Then two yam counts, $N_m$ = 4/2 and 6/2, were spun for two different knot densities. After weaving the carpets, they were put under static force and their thickness variations were measured and plotted against time, in logarithm scale. The resiliency of the carpets piles after eliminating the static force, were measured and plotted against time, in logarithm scale, too. The results were compared to each other and analysed with respect to parameters such as the type and quality of the wool fibres as well as knot density of the carpets.

• Journal of Radiation Protection and Research
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• v.13 no.2
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• pp.1-8
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• 1988

The energy losses of ${\alpha}$-particle with 3 to 5.4 MeV energy were measured as a function of gas absorber thickness and ${\alpha}$-particle energy in three light gaseous media; He, Ar, and $N_2$. The stopping powers and stopping cross-sections were determined by analyzing these data. For Ar gas, the experimental values are very well consistent with the corresponding values of Srivastava's stopping-power theory with the condition of the completely and partially stripped ion. For $N_2$ and He gases, these experimental values express the inconsistencies of about $13{\sim}36%$ and $27{\sim}28%$, respectively.

• Journal of the Korean Ceramic Society
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• v.38 no.10
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• pp.942-947
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• 2001

Thickness dependence of orientation on piezoelectric and electrical properties was investigated by PZT (52/48) films by diol based sol-gel method. The thickness of each layer by spinning at one time was $0.2{\mu}m$ and crack-free films could be successfully deposited on 4 inches Pt/Ti/$SiO_2$/Si substrates by 0.5 mol solutions in the range from $0.2{\mu}m$ to $3.8{\mu}m$. Excellent P-E hysteresis curves were achieved, which were attributed to the well-densified PZT films and columnar grain without pores or any defects between interlayers. The (111) preferred orientation of films were shown in the range of thickness below $1{\mu}m$. As the thickness increased, the (111) preferred orientation disappeared from $1{\mu}m$ to $3{\mu}m$ region, and the orientation of films became random above $3{\mu}m$. Dielectric constants and longitudinal piezoelectric coefficient, $d_{33}$, measured by pneumatic method were saturated around the value of about 1400 and 300 pC/N respectively above the thickness of $1{\mu}m$.

• Journal of the Korean earth science society
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• v.28 no.3
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• pp.343-356
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• 2007

This paper explored the characteristics of the interannual sea surface temperature (SST) variability in the equatorial Pacific by analyzing the simulated data from a newly coupled general circulation model (CGCM). The CGCM simulates well the realistic ENSO variability as well as the mean climatologies including SST, seasonal cycle, precipitation, and subsurface structures. It is argued that the zonal gradient of SST in the equatorial Pacific is responsible for the over-energetic SST variability near the equatorial western boundary in the model. This variability could also be related to the strong westward propagation of SST anomalies which resulted from the enhanced the zonal advection feedback. The simple two-strip model supports this by sensitivity tests. Analysis of the relationship between zonal mean thermocline depth and NINO3 SST index suggested that the ENSO variability is controlled by the recharge-discharge oscillator of the model. The lead-lag regression result reveals that heat buildup process in the western equatorial Pacific associated with the increase of the barrier layer thickness (BLT) is a precedent condition for El $Ni\widetilde{n}o$ to develop.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.6
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• pp.269-269
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• 2002

ZnTe/ZnMnTe single quantum well of high quality was grown by hot-wall epitaxy, in which ZnMnTe layer was used as a barrier. It was found that ZnTe well layer was under severe strain. Very sharp luminescent peaks of the heavy-hole exciton (el-hhl) and the light-hole exciton (el-lhl) were observed from the photoluminescence (PL) measurement. As the well layer thickness increases, the peaks associated with excitons of (el-hhl) and (el-lhl) were shifted toward the lower energy side. The temperature dependence of the PL peak intensity was well explained by the thermal activation theory.

• Journal of the Korean Ceramic Society
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• v.37 no.3
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• pp.263-270
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• 2000

The Pt/copper oxide/n-Si electrodes were fabricated by depositing copper oxide thin film of 500${\AA}$ and very thin Pt layer on the n-type (100) Si substrate. hotoelectrochemical properties and stability profiles of the electrodes were investigated as a function of deposition time of Pt layer. As the deposition time of Pt layer increased up to 10 seconds, the photocurrent and quantum efficiency were increased and then decreased with further depositing time. The better cell stability was observed for the electrode with longer deposition time. The improvements in above photoelectrochemical properties indicate that Pt layer acts as a catalyst layer at electrode/electrolyte interface as well as a protective layer. The decreasing tendency of the photocurrent and efficiency for the electrode with Pt layer deposited above 20 seconds was explained as an increases in probbility of electron-hole pair recombination and also the absorbing photon loss at electrode surface due to the excessive thickness of Pt layer. The results were confirmed by impedance spectroscopy, mutiple cycle voltammograms and microstructural analyses.

• Journal of the Semiconductor & Display Technology
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• v.14 no.3
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• pp.7-11
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• 2015

In order to protect the patterned mask from contamination during lithography process, pellicle has become a critical component for Extreme Ultraviolet (EUV) lithography technology. According to EUV pellicle requirements, the pellicle should have high EUV transmittance and robust mechanical property. In this study, silicon nitride, which is well-known for its remarkable mechanical property, was used as a pellicle membrane material to achieve high EUV transmittance. Since long silicon wet etching process time aggravates notching effect causing stress concentration on the edge or corner of etched structure, the remaining membrane is prone to fracture at the end of etch process. To overcome this notching effect and attain high transmittance, we began preparing a rather thick (200 nm) $SiN_x$ membrane which can be stably manufactured and was thinned into 43 nm thickness with HF wet etching process. The measured EUV transmittance shows similar values to the simulated result. Therefore, the result shows possibilities of HF thinning processes for $SiN_x$ EUV pellicle fabrication.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.12
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• pp.11-17
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• 2000

We investigated the growth of InGaN/GaN multiple quantum wells (MQWs) structures which emit blue light. The samples were grown in a low pressure metalorganic chemical vapor deposition system. We examined InGaN/GaN MQWs by varying growth temperatures and thicknesses of InGaN well and GaN barrier layers in MQWs. Especially, the thickness of GaN barrier in InGaN/GaN MQWs was found to severely affect the interfacial abruptness between InGaN well and GaN barrier layers. The higher order satellite peaks in the high resolution x-ray diffraction spectra and the high resolution cross sectional transmission electron microscope image of MQW structrues revealed that the interface between InGaN and GaN layers was very abrupt. Room-temperature photoluminescence spectra also showed a blue emission from InGaN/GaN MQWs at the wavelength of 463.5nm with a narrow full width at half maximum of 72.6meV.

• Proceedings of the Korean Society of Medical Physics Conference
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• 2002.09a
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• pp.219-221
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• 2002

In this work, single event spectra were measured in order to gain the microdosimetric parameters of some heavy ion radiotherapy fields at HIMAC. Microdosimetry is now a well-established technique for the investigation of complex mixed radiation field. Changes in frequency mean lineal energy y$\_$F/ as a function of thickness of A150 phantom were obtained. The absorbed dose was obtained by using y$\_$F/. A direct relation between this single event probability distribution and relative biological effectiveness (RBE) was assumed in order to estimate RBE using the response function.

• Journal of Electrical Engineering and information Science
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• v.2 no.4
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• pp.99-105
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• 1997

The new classified model for N-p heterojunction diode is derived and used extensively in analyzing the current-voltage(I-V) characteristics of the HBTs. A new classification method is presented in order to simplify I-V equations and easily applied to the modeling of HBTs. This classification method is characterized by the properties of devices such as high level injection, the thickness of one or both bulk regions, the surface recombination and the generation-recombination. The simulation results using the proposed model agree well with the experimentally observed I-V behaviors and show good efficiencies in its application to HBTs with respect to mathematical formulation.