• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.116-117
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• 2006

I-D ZnO nanostructures were fabricated by thermal evaporation method on Si(100), GaN and $Al_2O_3$ substrates without a catalyst at the reaction temperature of $700^{\circ}C$. Only pure Zn powder was used as a source material and Ar was used as a carrier gas. The shape and growth direction of synthesized ZnO nanostructures is determined by the crystal structure and the lattice mismatch between ZnO and substrates. The ZnO nanostructure on Si substrate were inclined regardless of their substrate orientation. The origin of ZnO/Si interface is highly lattice-mismatched and the surface of the Si substrate inevitably has the $SiO_2$ layer. The ZnO nanostructure on the $Al_2O_3$ substrate was synthesized into the rod shape and grown into particular direction. For the GaN substrate, however, ZnO nanostructure with the honeycomb-like shape was vertically grown, owing to the similar lattice parameter with GaN substrate.

• Journal of the Optical Society of Korea
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• 제12권2호
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• pp.65-68
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• 2008

The miniband structure of a quantum dot lattice based on GaN/AlN nanowire arrays has been investigated using the finite element method and Floquet theorem. The quantum dot modes and the quantum wire modes in the nanowire arrays were graphically verified. The optimum geometries of GaN/AlN quantum wire arrays were investigated by using a correlation between the width of nanowires and the separation of the minibandgap which is to be larger than the thermal energy at room temperature.

• 대한수학회지
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• 제56권5호
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• pp.1285-1307
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• 2019

For a multiplication R-module M we consider the Zariski topology in the set Spec (M) of prime submodules of M. We investigate the relationship between the algebraic properties of the submodules of M and the topological properties of some subspaces of Spec (M). We also consider some topological aspects of certain frames. We prove that if R is a commutative ring and M is a multiplication R-module, then the lattice Semp (M/N) of semiprime submodules of M/N is a spatial frame for every submodule N of M. When M is a quasi projective module, we obtain that the interval ${\uparrow}(N)^{Semp}(M)=\{P{\in}Semp(M){\mid}N{\subseteq}P\}$ and the lattice Semp (M/N) are isomorphic as frames. Finally, we obtain results about quantales and the classical Krull dimension of M.

• Communications for Statistical Applications and Methods
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• 제14권1호
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• pp.147-153
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• 2007

In this note, we obtained results related to multiparameter discrete exponential families on considering lattice or semi-lattice in place of N (Natural numbers) in view of Cacoullos-type inequalities via the same arguments in Papathanasiou (1990, 1993).

• 대한산업공학회지
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• 제30권3호
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• pp.250-260
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• 2004

This study considers a linear connected-(r,s)-out-of-(m,n):F lattice system whose components are ordered like the elements of a linear (m,n )-matrix. We assume that all components are in the state 1 (operating) or 0 (failed) and identical and s-independent. The system fails whenever at least one connected (r,s)-submatrix of failed components occurs. The purpose of this paper is to present an optimization scheme that aims at minimizing the expected cost per unit time. To find the optimal threshold of maintenance intervention, we use a genetic algorithm for the cost optimization procedure. The expected cost per unit time is obtained by Monte Carlo simulation. The sensitivity analysis to the different cost parameters has also been made.

• Journal of Magnetics
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• 제10권2호
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• pp.63-65
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• 2005

The $^1H$ NMR spin-lattice relaxation in a series of the organic-inorganic hybrid systems $(C_nH_{2n+1}NH_3)_2SnCl_6$ (n = 8, 10, 12, 14) undergoing two successive phase transitions was studied. A discontinuity characteristic of a first order phase transition was observed at the high-temperature conformational transition. Besides, the spin-lattice relaxation rate below the conformational transition temperature was well fitted by four types of molecular motions, from which the chain-length dependence of the activation energies of the molecular groups was obtained.

• 한국진공학회지
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• 제17권2호
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• pp.109-112
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• 2008

고집적화된 반도체 소자 기술은 나날이 발전하고 있다. 특히 금속 배선을 위한 박막제조 공정에서 배선 선폭은 감소하고 있으며, 그 길이는 더욱 증가하게 되었다. 이러한 상황에서 금속 배선 물질에 대한 연구가 진행 되었고 그 결과 Cu가 그 대안으로 인식되었다. 하지만 Cu는 저온에서도 Si기판과 반응하므로 인하여 접촉면의 저항이 급격히 증가하여 소자로써의 기능이 불가능하게 되는 단점이 있다. 따라서 이러한 Cu와 Si기판 사이의 반응을 효과적으로 방지할 확산방지막의 개발이 필수 요건이 되었다. 본 연구는 Cu의 확산을 방지하는 W-C-N 확산방지막에 대한 연구로 질소비율과 열처리 온도를 변화하여 실험하였으며, 특히 격자상수 변화를 통하여 W-C-N 확산방지의 특성에 대하여 연구하였다.

• 전기전자학회논문지
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• 제6권2호
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• pp.136-145
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• 2002

정상상태에서 소자 내부의 격자온도 분포를 해석할 수 있는 시뮬레이터를 개발하였다. Slotboom 변수를 사용하여 열흐름 방정식을 이산화하였고, 요소내에서 열전도율의 적분값을 해석적으로 구할 수 있는 방법을 제안하였다. 제안된 방법의 타당성을 검증하기 위해 $N^+P$ 접합 다이오드와 BJT에 대해 모의실험을 수행하였고 DAVINCI와 MEDICI의 결과와 비교하였다. $N^+P$ 접합 다이오드에서 순방향 인가전압이 1.4[V]일 때 격자 온도분포는 DAVINCI의 결과와 2%의 상대오차를 보였으며 BJT에서 컬렉터 전압이 5.0[V]이고 베이스 전압이 0.5[V]일 때 격자 온도분포는 MEDICI의 결과와 3%의 상대오차를 보였다. BANDIS에서 제안된 열전도율의 적분방법을 사용하는 경우 수렴을 위해 평균 3.45회의 행렬 연산이 필요하나 DAVINCI에서는 평균 5.1회의 행렬 연산이 필요하였고 MEDICI는 평균 4.3회 행렬연산이 필요하였다.

• Journal of applied mathematics & informatics
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• 제15권1_2호
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• pp.503-510
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• 2004

Given vectors x and y in a Hilbert space, an interpolating operator is a bounded operator T such that Tx = y. An interpolating operator for n vectors satisfies the equation $Tx_i\;=\;y_i,\;for\;i\;=\;1,\;2,\;\cdots,\;n$. In this paper the following is proved: Let H be a Hilbert space and L be a commutative subspace lattice on H. Let H and y be vectors in H. Let $M_x\;=\;\{{\sum{n}{i=1}}\;{\alpha}_iE_ix\;:\;n\;{\in}\;N,\;{\alpha}_i\;{\in}\;{\mathbb{C}}\;and\;E_i\;{\in}\;L\}\;and\;M_y\;=\;\{{\sum{n}{i=1}}\;{\alpha}_iE_iy\;:\;n\;{\in}\;N,\;{\alpha}_i\;{\in}\;{\mathbb{C}}\;and\;E_i\;{\in}\;L\}. Then the following are equivalent. (1) There exists an operator A in AlgL such that Ax = y, Af = 0 for all f in ${\overline{M_x}}^{\bot}$, AE = EA for all $E\;{\in}\;L\;and\;A^{*}\;=\;A$. (2) $sup\;\{\frac{{\parallel}{{\Sigma}_{i=1}}^{n}\;{\alpha}_iE_iy{\parallel}}{{\parallel}{{\Sigma}_{i=1}}^{n}\;{\alpha}_iE_iy{\parallel}}\;:\;n\;{\in}\;N,\;{\alpha}_i\;{\in}\;{\mathbb{C}}\;and\;E_i\;{\in}\;L\}\;<\;{\infty},\;{\overline{M_u}}\;{\subset}{\overline{M_x}}$ and < Ex, y >=< Ey, x > for all E in L.

• 대한기계학회논문집B
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• 제26권10호
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• pp.1427-1435
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• 2002

The main aim of the present article is numerically to investigate the micro-scale heat transfer phenomena in a silicon microstructure irradiated by picosecond-to-femtosecond ultra-short laser pulses. Carrier-lattice non-equilibrium phenomena are simulated with a self-consistent numerical model based on Boltzmann transport theory to obtain the spatial and temporal evolutions of the lattice temperature, the carrier number density and its temperature. Especially, an equilibration time, after which carrier and lattice are in equilibrium, is newly introduced to quantify the time duration of non-equilibrium state. Significant increase in carrier temperature is observed for a few picosecond pulse laser, while the lattice temperature rise is relatively small with decreasing laser pulse width. It is also found that the laser fluence significantly affects the N 3 decaying rate of Auger recombination, the carrier temperature exhibits two peaks as a function of time due to Auger heating as well as direct laser heating of the carriers, and finally both laser fluence and pulse width play an important role in controlling the duration time of non-equilibrium between carrier and lattice.