• Bulletin of the Korean Mathematical Society
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• v.54 no.1
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• pp.43-50
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• 2017

Let A(n) denote the largest absolute value of the coefficients of n-th cyclotomic polynomial ${\Phi}_n(x)$ and let p < q < r be odd primes. In this note, we give an infinite family of cyclotomic polynomials ${\Phi}_{pqr}(x)$ with A(pqr) = 3, without fixing p.

• JSTS:Journal of Semiconductor Technology and Science
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• v.3 no.1
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• pp.1-12
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• 2003

This paper describes a study on the abnormal behavior of the electrical characteristics of the (n)GaAs/Ti/Pt/Au Schottky contacts prepared by the two techniques of electron beam deposition and rf sputtering and after an annealing treatment. The samples were characterized by I-V and C-V measurements carried out over the temperature range of 150 - 350 K both in the as prepared state and after a 300 C, 30 min. anneal step. The variation of ideality factor with forward bias, the variation of ideality factor and barrier height with temperature and the difference between the capacitance barrier and current barrier show the presence of a thin interfacial oxide layer along with barrier height inhomogenieties at the metal/semiconductor interface. This barrier height inhomogeneity model also explains the lower barrier height for the sputtered samples to be due to the presence of low barrier height patches produced because of high plasma energy. After the annealing step the contacts prepared by electron beam have the highest typical current barrier height of 0.85 eV and capacitance barrier height of 0.86 eV whereas those prepared by sputtering (at the highest power studied) have the lowest typical current barrier height of 0.67 eV and capacitance barrier height of 0.78 eV.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.4
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• pp.266-270
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• 2011

We report on the formation mechanism of large Schottky barrier height (SBH) of nonalloyed Cr Schottky contacts on strained Al0.25Ga0.75N/GaN. Based on the current-voltage (I-V) and capacitance-voltage (C-V) data, the SBHs are determined to be 1.98 (${\pm}0.02$) and 2.07 (${\pm}0.02$) eV from the thermionic field emission and two-dimensional electron gas (2DEG) calculations, respectively. Possible formation mechanism of large SBH will be described in terms of the formation of Cr-O chemical bonding at the interface between Cr and AlGaN/GaN, low binding-energy shift to surface Fermi level, and the reduction of 2DEG electrons.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.113-113
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• 2000

직접천이형 wide band gap(3.4eV) 반도체중의 하나인 GaN를 청색 및 자외선 laser diode, 고출력 전자장비 등으로 응용하기 위해서는 낮은 접합저항을 갖는 Ohmic contact이 선행되어야 한다. 그러나 만족할만한 p-type GaN의 Ohmic contact은 아직 실현되고 있지 못하며, 이는 GaN와 접합 금속과의 구체적인 반응의 연구를 필요로 한다. 본 연구에서 앞서 Pt, Pt, Ni등의 late transition metal을 p-GaN에 접합시킨 결과 이들은 접합 당시 비교적 평탄하나 후열 처리과정에서 비교적 낮은 온도에서 기판과 열팽창계수의 차이로 인하여 평탄성을 잃어버리면서 barrier height가 증가한다는 사실을 확인하였다. 따라서 본 연구에서는 이러한 열적 불안정성을 극복하기 위하여 Ni과 Pd를 차례로 증착하고 가열하면서 interfacial reaction, film morphology, Fermi level의 움직임을 monchromatic XPS(x-ray photoelectron spectroscopy) 와 SAM(scanning Auger microscopy) 그리고 ex-situ AFM을 이용하여 밝히고자 하였다. 특히 후열처리에 의한 계면 반응에 수반되는 구성 금속원소 간의 합금현상과 금속 층의 평탄성이 밀접한 관계가 있다는 것을 확인하였다. 이러한 합금과정에서 나타나는 금속원소들의 중심 준위의 이동을 체계적으로 규명하기 위해서 Pd1-xNix와 Pd1-xGax 합금들의 표준시료를 arc melting method로 만들어 농도에 따른 금속원소들의 중심 준위의 이동을 측정하여, Pd/Ni/p-GaN 및 Ni/Pd/p-GaN 계에서 열처리 온도에 따른 interfacial reaction을 확인하였다. 그 결과 두 계가 상온에서 nitride 및 alloy를 형성하지 않고 고르게 증착되고, 열처리 온도를 40$0^{\circ}C$에서 $650^{\circ}C$까지 증가시킴에 따라 계면반응의 부산물인 metallic Ga은 증가하고 있으마 nitride는 여전히 형성되지 않는 것을 확인하였다. 증착당시 Ni이 계면에 있는 Pd/Ni/p-GaN의 경우에는 52$0^{\circ}C$까지의 열처리에 의하여 Ni과 Pd가 골고루 섞이고 그 평탄성도 유지되고 barier height의 변화도 없었다. 더 높은 $650^{\circ}C$ 가열에 의해서는 surface free energy가 작은 Ga의 활발한 편석 현상으로 인해 표면은 Ga이 풍부한 Pd-Ga의 합금층으로 덮이고, 동시에 작은 pinhole들이 발생하며 barrier height도 0.3eV 가량 증가하게 된다. 반면에 증착당시 Pd이 계면에 있는 Ni/Pd/p-GaN의 경우에는 40$0^{\circ}C$의 가열까지는 두 금속이 그들 계면에서부터 섞이나, 52$0^{\circ}C$의 가열에 의해 이미 barrier height가 0.2eV 가량 증가하기 시작하였다. 더 높은 $650^{\circ}C$가열에 의해서는 커다란 pinhole, 0.5eV 가량의 barrier height 증가, Pd clustering이 동시에 관찰되었다. 따라서 Ni과 Pd의 일함수는 물론 thermal expansion coefficient가 거의 같으며 surface free energy도 거의 일치한다는 점을 감안하면, 이렇게 뚜렷한 열적 안정성의 차이는 GaN와 contact metal과의 반응시작 온도(disruption onset temperature)의 차이에 기인함을 알 수 있었다. 즉 계면에서의 반응에 의해 편석되는 Ga에 의해 박막의 strain이 이완되면, pinhole 등의 박막결함이 줄어 들고, 이는 계면의 N의 out-diffusion을 방지하여 p-type GaN의 barrier height 증가를 막게 된다.

• The korean journal of orthodontics
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• v.22 no.1
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• pp.179-203
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• 1992

This study was designed to analyze nasal respiratory patency and its correlation with skeletal components in growing children with anterior crossbite. The subjects consisted of 40 control patients, 24 nose breathers with anterior crossbite and 18 mouth breathers with anterior crossbite. The mean age was 11.4 years in the control group, 10.1 years in nose breathing group and 9.5 years in mouth breathing group. The results were as follows, 1. In anterior cross bite group, and nasal respiratory airflow rates (N.R.A.R.) was significantly lower than that of control group regardless of nasal decongestants application. 2. The N.R.A.R. of mouth breathers with anterior crossbite in male group was significantly lower than that of mouth breathers, but increased to the level of control group after nasal decongestants application. But in female group, the N.R.A.R. was significantly lower in mouth breathing group at both conditions. 3. Mouth breathing group showed smaller anterior vertical nasal cavity height (ANS-ANS'), lower upper anterior facial height ratios (N-sp'/N-Me) and higher maxillary occlusal plane ratios (OL-ML/ML-NL) than those of nose breathing group with anterior crossibte. 4. Items showing nasal height (ANS-ANS', PNS-PNS'), anterior upper facial height (N-sp') was were strongly correlated with N.R.A.R. at 150 pascal in inspiration. But item showing maxillary occlusal plane ratios (OL-ML/ML-NS) was negatively correlated with N.R.A.R. at 150 pascal in inspiration. 5. There were forward tongue position in mouth breathing group, but it was not significantly correlated with N.R.A.R. at 150 pascal in inspiration.

• Journal of the Korean Institute of Telematics and Electronics
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• v.23 no.5
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• pp.712-718
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• 1986

A shallow n+ layer of implanted phosphorus was used to lower the barrier height of PtSinSi schottky diodes. The reduction of barrier height of the forward turn-on voltages from 400mV to 180mV of the forward was followed by implantation of phosphorus at 35KeV with an ion dose of 8.0x10**12 atoms/cm\ulcornerand was activated at 925\ulcorner for 30min in dry O2. The test result showed that, as the ion-implanted dose increased, the forward turn-on voltage and reverse breakdown voltage were linearly decreased, but the saturation current and ideality factor(n) were linearly increased.

• Transactions on Electrical and Electronic Materials
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• v.16 no.3
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• pp.151-155
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• 2015

We fabricated the Cu Schottky contact on an n-type Ge wafer and investigated the forward bias current-voltage (I-V) characteristics in the temperature range of 100~300 K. The zero bias barrier height and ideality factor were determined based on the thermionic emission (TE) model. The barrier height increased and the ideality factor decreased with increasing temperature. Such temperature dependence of the barrier height and the ideality factor was associated with spatially inhomogeneous Schottky barriers. A notable deviation from the theoretical Richardson constant (140.0 Acm^-2K^-2 for n-Ge) on the conventional Richardson plot was alleviated by using the modified Richardson plot, which yielded the Richardson constant of 392.5 Acm^-2K^-2. Finally, we applied the theory of space-charge-limitedcurrent (SCLC) transport to the high forward bias region to find the density of localized defect states (N_t), which was determined to be 1.46 × 10¹² eV^-1cm^-3.

• Nuclear Engineering and Technology
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• v.51 no.1
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• pp.263-268
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• 2019

The $^3He$ proportional chamber is widely used for neutron measurement owing to its high neutron detection efficiency and simplicity for gamma-ray rejection. In general, the neutron and gamma-ray signals obtained from the $^3He$ proportional chamber can be easily separated by the difference in the pulse heights. However, for a high gamma-ray field, the gamma-ray signal cannot be precisely eliminated by the pulse height due to gamma-ray pulse pileup which causes the pulse height of gamma-ray pulse to increase and making the pulses due to neutrons and gamma rays indistinguishable. In this study, an improved algorithm for $n/{\gamma}$ discrimination using a parameter, which is the ratio of the rise time to the pulse height, is proposed. The $n/{\gamma}$ discrimination performance of the algorithm is evaluated by applying it to $^{252}Cf$ neutron signal separation from various gamma-ray exposure rate levels ranging 0.1-5 R/h. The performance is compared to that of the conventional pulse-height analysis method in terms of the gamma elimination ratio. The suggested algorithm shows better performance than the conventional one by 1.7% (at 0.1 R/h) to 70% (at 5 R/h) for gamma elimination.

• Communications of the Korean Mathematical Society
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• v.38 no.2
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• pp.331-340
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• 2023

In this paper, the concept of a maximal chain of ideals is introduced. Some properties of such chains are studied. We introduce some other concepts related to a maximal chain of ideals such as the n-maximal ideal, the maximal dimension of a ring S (M. dim(S)), the maximal depth of an ideal K of S (M.d(K)) and maximal height of an ideal K(M.d(K)).

• Journal of the korean academy of Pediatric Dentistry
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• v.30 no.4
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• pp.563-575
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• 2003

The purpose of this study was to investigate differences in craniofacial characteristics of professional sportsmen who have practiced since their prepubertal periods. From the standardized lateral and P-A cephalograms of 137 sportsmen, 7 angular, 19 linear, 4 ratio, and 2 index measurements were measured and evaluated by means of statistical methods. The samples were divided into three groups: Group 1; ice hockey(n=17), foot-ball(n=27), basketball(n=16) Group 2; baseball(n=16), gymnastics(n=13), and Group 3; judo(n=18), ssireum(n=10), weight lift(n=20). The results were as follows: It seemed obvious that the cephalic indices of the 3 groups exhibited brachycephalic headform (Group 1; $0.85{\pm}0.04$, Group 2; $0.84{\pm}0.04$, Group 3; $0.83{\pm}0.06$) and there was no statistical difference among the groups (p>0.05). The facial indices of the Group 1 ($0.93{\pm}0.05$) and Group 2 ($0.93{\pm}0.04$) exhibited definite leptoprosopic facial forms while the Group 3 ($0.90{\pm}0.04$) showed more or less euryprosopic facial form, and there appeared significant difference between the Group 1 and 3 (p<0.05), and also between the Group 2 and 3 (p<0.05). There appeared strong relationships between the facial indices and the facial axis angle, mandibular plane angle, total craniofacial height, total facial height, upper anterior dental height, lower anterior dental height, mandibular length, lower anterior facial height ratio, and especially with lower anterior facial height (p<0.001). It seemed that most of the vertical facial measurements of the Group 1 and 2 appeared to be larger than those of the Group 3.