• Proceedings of the Korean Vacuum Society Conference
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• 2004.08a
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• pp.251-251
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• 2004

• Journal of Environmental Health Sciences
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• v.27 no.4
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• pp.63-71
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• 2001

PM 2.5/ samples were measured at two sites, Hadan(suburban site) and Anrak (roadside site) in Busan area. PM 2.5/ sampling was performed for 24-hour intervals by the FH9.5 particulate sampler. Aerosol samples were collected on PTFE filter. A total of 60 particulate samples were collected, dad samples were measured for Particulate mass concentration, metallic elements (Cr, Mn, Ni. Cu. Se, Fe, Pb, and Zn) and waer-soluble elements (C $l^{[-10]}$ , N $O_{3}$$^{[-10]}$ ,S $O_{4}$$^{2-}$, N $H_{4}$$^{+}$, $Ca_{2}$$^{+}$, $Mg_{2}$$^{+}$ and $^{+}$.Mass concentration in Hadan ranged 24.23~57.12 $\mu\textrm{g}$/㎥ and 60.22~72.12 $\mu\textrm{g}$/㎥m Yellow Sand Events. Major cations in Hadan and Anrak site is N $H_{4}$$^{+}$and N $a^{+}$ respectively. SO42$^{[-10]}$ was the abundant specie in the PM 2.5 fraction for Hadan site an dAnrak site. Hadan site showed igher concentration in S $O_{4}$$^{2.1}$ and N $H_{4}$ $^{+}$ In Anrak site the concentration of S $O_{4}$/sip 2-/and N $a^{+}$ was higher than other ions Prominent metallic elements were Fe and Pb in two sites. Principal component analysis showed that main source of PM 2.5 aerosol particles was non-metal related source which was resulted in relating elements as Cr, Ni, and Pb at Hadan site, Anrak site also has resulted PM2.5 aerosol paricles source, which was related its element like Zn, and Ni,. The SAS package analysis also showed that long-range transport effect at Hadan area due to Yellow Sand Event by the prevailing weaterlies.ling weaterlies.

• Analytical Science and Technology
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• v.11 no.2
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• pp.145-149
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• 1998

Stability constants for the complexes of multidentate N,O-Schiff base ligands (bis-(salicylaldehyde)ethylendiamine(SED), bis-(salicylaldehyde)propylendiamine(SPD), bis-(salicylaldehyde)diethylenetriamine(SDT), bis-(salicylaldehyde)triethylenetetraamine(STT), and bis-(salicylaldehyde)tetraethylenepentaamine(STP) with Co(II) and Zn(II) were determined by a potentiometric method in a 70% dioxane-30% water mixture and ethanol, respectively. Stability constants for the complexes increased in the order of SPD

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.260-263
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• 2004

During the last few years, there have been many efforts on the fabrication of electronic and optical devices based on semiconductor nanowires. Room-temperature ultraviolet lasing in GaN nanowire, ultraviolet light sensing in ZnO nanowire, and dramatically improved hall mobility in Si nanowire have been demonstrated in this article. The studies on semiconductor nanowire based electronic and optical device is reviewed.

• Transactions on Electrical and Electronic Materials
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• v.18 no.1
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• pp.51-54
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• 2017

TFTs (thin film transistors) were fabricated using a-SIZO (amorphous silicon-indium-zinc-oxide) channel by RF (radio frequency) magnetron sputtering at room temperature. We report the influence of various channel thickness on the electrical performances of a-SIZO TFTs and their stability, using TS (temperature stress) and NBTS (negative bias temperature stress). Channel thickness was controlled by changing the deposition time. As the channel thickness increased, the threshold voltage ($V_{TH}$) of a-SIZO changed to the negative direction, from 1.3 to -2.4 V. This is mainly due to the increase of carrier concentration. During TS and NBTS, the threshold voltage shift (${\Delta}V_{TH}$) increased steadily, with increasing channel thickness. These results can be explained by the total trap density ($N_T$) increase due to the increase of bulk trap density ($N_{Bulk}$) in a-SIZO channel layer.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.218-218
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• 2011

The CIGS Solar Cells have the highest conversion efficiency in the film-type solar cells. They consist of p-type CuInSe2 film and n-type ZnO film. The CdS films are used as buffer layer in the CIGS solar cells since remarkable difference in the lattice constant and energy band gap of two films. The CdS films are toxic and make harmful circumstances. The CdS films deposition process need wet process. In this works, we design and make the hitter and lamp reflection part in the sputtering system for the ZnS films deposition as buffer layer, not using wet process. Film thickness, SEM, and AFM are measured for the uniformity valuation of the ZnS films. We conclude the optimum deposition temperature for the films uniformity less than 1.6%. The ZnS films deposited by the sputtering system are more dense and uniform than the CdS films deposited by the Chemical Bath Deposition Method(CBD) for the CIGS Solar Cells.

• Macromolecular Research
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• v.10 no.6
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• pp.369-372
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• 2002

The use of ZnO and stearic acid is very well known in sulfenamide accelerated sulfur vulcanization of diene elastomers. Zn-ion coated nano filler has been developed and tested, in styrene-butadiene rubber (SBR) as sulfur vulcanizing activator cum reinforcing filler. In this study Zinc oxide has been replaced by the Zn-ion coated nano silica filler with an aim to study the dual role of this nanofiller in SBR. The presence of Zn-ion on the nano silica filler surface activates the sulfur vulcanization by involving Zn++ in to the sulfurating complex formed with thiazole from sulfenamide. The increase of Zn-ion, on the nanofiller, decrease the scorch safety of the elastomer compound but increase the tensile strength, state of cure and tear strength and attain maximum at its 10% level. The presence of stearic acid increases the rate of vulcanization. Replacement of stearic acid with mono-stearate, however, increases the vulcanization rate but decrease the ultimate state of cure. A mechanistic scheme involving dual function of this nanofiller has been suggested.

• Smart Structures and Systems
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• v.12 no.1
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• pp.55-71
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• 2013

Structural health monitoring (SHM) is vital for detecting the onset of damage and for preventing catastrophic failure of civil infrastructure systems. In particular, piezoelectric transducers have the ability to excite and actively interrogate structures (e.g., using surface waves) while measuring their response for sensing and damage detection. In fact, piezoelectric transducers such as lead zirconate titanate (PZT) and poly(vinylidene fluoride) (PVDF) have been used for various laboratory/field tests and possess significant advantages as compared to visual inspection and vibration-based methods, to name a few. However, PZTs are inherently brittle, and PVDF films do not possess high piezoelectricity, thereby limiting each of these devices to certain specific applications. The objective of this study is to design, characterize, and validate piezoelectric nanocomposites consisting of zinc oxide (ZnO) nanoparticles assembled in a PVDF copolymer matrix for sensing and SHM applications. These films provide greater mechanical flexibility as compared to PZTs, yet possess enhanced piezoelectricity as compared to pristine PVDF copolymers. This study started with spin coating dispersed ZnO- and PVDF-TrFE-based solutions to fabricate the piezoelectric nanocomposites. The concentration of ZnO nanoparticles was varied from 0 to 20 wt.% (in 5 % increments) to determine their influence on bulk film piezoelectricity. Second, their electric polarization responses were obtained for quantifying thin film remnant polarization, which is directly correlated to piezoelectricity. Based on these results, the films were poled (at 50 $MV-m^{-1}$) to permanently align their electrical domains and to enhance their bulk film piezoelectricity. Then, a series of hammer impact tests were conducted, and the voltage generated by poled ZnO-based thin films was compared to commercially poled PVDF copolymer thin films. The hammer impact tests showed comparable results between the prototype and commercial samples, and increasing ZnO content provided enhanced piezoelectric performance. Lastly, the films were further validated for sensing using different energy levels of hammer impact, different distances between the impact locations and the film electrodes, and cantilever free vibration testing for dynamic strain sensing.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.211.1-211.1
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• 2015

최근 용액 공정을 이용한 산화물 반도체에 대한 연구가 활발히 진행되고 있다. 넓은 밴드갭을 가지고 있는 산화물 반도체는 높은 투과율을 가지고 있어 투명 디스플레이에 적용이 가능하다. 기존의 박막 진공증착 방법은 진공상태를 유지하기 위한 장비의 가격이 비싸며, 대면적의 어려움, 높은 생산단가 등으로 생산율이 높지 않다. 하지만 용액 공정을 이용하면 대기압에서 증착이 가능하고 대면적화가 가능하다. 그리고 각각의 조성비를 조절하는 것이 가능하다. 이러한 장점에도 불구하고, 소자의 신뢰성이나 저온공정은 중요한 이슈이다. Instability는 threshold voltage (Vth)의 shift 및 on/off switching의 신뢰성과 관련된 parameter이다. 용액은 소자의 전기적 특성을 열화 시키는 수분 과 탄소계열의 불순물을 다량 포함 하고 있어 고품질의 박막을 형성하기 위해서는 고온의 열처리가 필요하다. 기존의 열처리는 고온에서 장시간 이루어지기 때문에 유리나 플라스틱, 종이 기판의 소자에서는 불가능하지만 $100^{\circ}C$ 이하의 저온 공정인 microwave를 이용하면 유리, 플라스틱, 종이 기판에서도 적용이 가능하다. 본 연구에서는 산화물 반도체 중에서 InGaZnO (IGZO)를 용액 공정으로 제작한 juctionless thin-film transistor를 제작하여 기존의 열처리를 이용하여 처리한 소자와 microwave를 이용해서 열처리한 소자의 전기적 특성을 한 달 동안 관찰 하였다. 또한 In:Zn의 비율을 고정한 후 Ga의 비율을 달리하여 특성을 비교하였다. 먼저 p-type bulk silicon 위에 SiO2 산화막이 100 nm 증착된 기판에 RCA 클리닝을 진행 하였고, solution InGaZnO 용액을 spin coating 방식으로 증착하였다. Coating 후에, solvent와 수분을 제거하기 위해서 $180^{\circ}C$에서 10분 동안 baking공정을 하였다. 이후 furnace열처리와 microwave열처리를 비교하기 위해 post-deposition-annealing (PDA)으로 furnace N2 분위기에서 $600^{\circ}C$에서 30분, microwave를 1800 W로 2분 동안 각각의 샘플에 진행하였다. 또한, HP 4156B semiconductor parameter analyzer를 이용하여 제작된 TFT의 transfer curve를 측정하였다. 그 결과, microwave 열처리한 소자의 경우 기존의 furnace 열처리 소자와 비교하여 높은 mobility, 낮은 hysteresis 값을 나타내었으며, 1달간 소자의 특성을 관찰하였을 때 microwave 열처리한 소자의 경우 전기적 특성이 거의 변하지 않는 것을 확인하였다. 따라서 향후 용액공정, 저온공정을 요구하는 소자 공정에 있어 열처리방법으로 microwave를 이용한 활용이 기대된다.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.11a
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• pp.32.2-32.2
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• 2009

21세기의 IT 및 NT를 선두 하게 될 나노소자의개발은 10년 전부터 아주 활발히 연구되고 있다. 최근, 이러한 나노소자의 연구 가운데 주목할 만한 물질이 ZnO 이다. ZnO를 기반으로 한 나노구조는 여러 성장 법으로 성장이 용이하고, 그 물리적, 광학적 특성이 우수하여 광 전소자 응용에 크게 이바지할 물질로 관심을 끌고 있다. 이 가운데 나노선은 소자제작이 용이해 가장 많이 이용되고 있다. 나노선을기반으로 한 소자제작은 bottom-up 공정을 지향하고 있지만, 아직은 top-down 방식이 소자제작의 주류를 이루고 있다. 특히, 나노선 FET 소자제작 시에는 여전히 top-down이 사용되고 있으며, 채널로 사용되는 나노선의 어레이공정은 소자제작 시 가장 큰 어려움으로 대두되고 있다. 하지만, 이러한나노선의 수평 어레이 공정을 감소시킬 구조로 기판에 수평으로 배열된 나노월 구조가 제안되고 있다. 나노월구조는 어레이 공정 수를 크게 감소시켜 생산가격 면에서 큰 이점을 가져올 것으로 생각된다. 하지만, 이러한 ZnO 나노월은 GaN 기판에 한정하여 성장되고 있으며, 일부 Si 기판 위에 성장할지라도나노 사이즈가 아닌 마이크로 사이즈의 거친 표면을 가지는 박막구조로 보고되었다. 때문에, 가격적으로 비싸고 응용성이 제한적인 비전도성 기판을 대신하여, 가격이 저렴하고 응용성이 넓은 Si과 같은 전도성 기판에 나노월 구조를 성장하는 기술이 요구되고 있다. 본 연구에서는 Mg의 도입으로 자발적으로 형성된 비정질 MgO층 위에 상 분리된 MZO 비정질-단결정 층들을 이용하여 어떠한 기판에서도 나노월 구조가 성장할 수 있는 기반 기술을 소개한다.