• 제목/요약/키워드: multiple emitting layers

검색결과 13건 처리시간 0.028초

Stabilization of the luminance efficiency in the blue organic light-emitting devices utilizing CBP and DPVBi emitting layers

  • Bang, H.S.;Choo, D.C.;Park, J.H.;Seo, J.H.;Kim, Y.K.;Kim, T.W.
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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    • pp.1454-1456
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    • 2007
  • The electrical and the optical properties of blue organic light-emitting devices (OLEDs) with a multiple emitting layer (EML) acting as electron and hole trapping layers were investigated. While the luminance efficiency of the OLEDs with a multiple EML was very stable, regardless of variations in the applied voltage.

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Color-stabilized organic light-emitting devices by using N, N'-bis-(1- naphthyl)-N, N'-diphenyl-1,1-biphenyl-4,4'-diamine/5,6,11,12 - tetraphenylnaphthacene multiple quantum well structures

  • Yoon, Y.B.;Kim, T.W.;Yang, H.W.;Lee, H.G.;Kim, J.H.;Kim, Y.G.
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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    • pp.1378-1380
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    • 2005
  • The efficiency and the optical properties of the yellow organic light-emitting devices (OLEDs) were significantly affected by the existence of the multiple quantum well (MQW) structures consisting of N, N'- bis-(1-naphthyl)-N, N'-diphenyl-1,1-biphenyl-4,4'- diamine(NPB)/5,6,11,12 - tetraphenylnaphthacene (rubrene). The maximum efficiency and the luminance of OLEDs with 3-periods of the NPB/rubrene MQWs at 41.6 $mA/cm^2$ were 3.66 cd/A and 1524 $cd/m^2$, respectively, and their Commission Internationale de l'Eclairage chromaticity coordinates were (0.34, 0.55), which indicates a yellow color. These results indicate that the efficiencies of the OLEDs by using MQW emitting layers can be improved.

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Dependence of Resistance and Capacitance of Organic light Emitting diode (OLED) on Applied Voltage

  • Lee, Soon-Seok;Im, Woo-Bin;Lim, Sung-Kyoo
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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    • pp.446-449
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    • 2008
  • Organic light emitting diodes (OLEDs) with multiple organic layers were fabricated to obtain and to evaluate an equivalent resistance and an equivalent capacitance of OLED device. The staircase voltage with an increasing period and a constant period was designed and applied to the OLED. The resistance of OLED was found to decrease from $270\;k{\Omega}$ to $2\;K{\Omega}$ as applied voltage increased after turn on. The equivalent capacitance of OLED maintained unchanged at low voltage level and deceased after showing peak value as the applied voltage increased.

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Controlled Charge Carrier Transport and Recombination for Efficient Electrophosphorescent OLED

  • Chin, Byung-Doo;Choi, Yu-Ri;Eo, Yong-Seok;Yu, Jai-Woong;Baek, Heume-Il;Lee, Chang-Hee
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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    • pp.1418-1420
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    • 2008
  • In this paper, the light emitting efficiency, spectrum, and the lifetime of the phosphorescent devices, whose emission characteristics are strongly dominated not only by the energy transfer but also by the charge carrier trapping induced by the emissive dopant, are explained by differences in the energy levels of the host, dopant, and nearby transport layers. On the basis of our finding on device performance and photocurrent measurement data by time-of-flight (TOF), we investigated the effect of the difference of carrier trapping dopant and properties of the host materials on the efficiency roll-off of phosphorescent organic light emitting diode (OLED), along with a physical interpretation and practical design scheme, such as a multiple host system, for improving the efficiency and lifetime of devices.

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Deep-learning based In-situ Monitoring and Prediction System for the Organic Light Emitting Diode

  • Park, Il-Hoo;Cho, Hyeran;Kim, Gyu-Tae
    • 반도체디스플레이기술학회지
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    • 제19권4호
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    • pp.126-129
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    • 2020
  • We introduce a lifetime assessment technique using deep learning algorithm with complex electrical parameters such as resistivity, permittivity, impedance parameters as integrated indicators for predicting the degradation of the organic molecules. The evaluation system consists of fully automated in-situ measurement system and multiple layer perceptron learning system with five hidden layers and 1011 perceptra in each layer. Prediction accuracies are calculated and compared depending on the physical feature, learning hyperparameters. 62.5% of full time-series data are used for training and its prediction accuracy is estimated as r-square value of 0.99. Remaining 37.5% of the data are used for testing with prediction accuracy of 0.95. With k-fold cross-validation, the stability to the instantaneous changes in the measured data is also improved.

Europium Complex를 이용하여 저작한 다층구조의 발광 특성 (Emission Properties of Europium Complex Utilizing Multilayer Quantum-well Str by Vacuum Vapor Deposition Method)

  • 이상필;김옥병;이한성;김영관;김정수
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1999년도 하계학술대회 논문집 D
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    • pp.1747-1749
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    • 1999
  • Organic electroluminescent devices (OLEDs) have received a great deal of attention due to their potential application as full-color displays. Europium complexes are known as excellent red color-emitting materials for OLEDs since they show intense photoluminescence at around 610 nm with a sharp spectral bandwidth. In this study, triple-layer and multiple quantum-well structures consisting of Eu$(TTA)_3$(bpy) complex well layer sandwiched triphenyldiamine derivative (TPD) layers were fabricated and their photoluminescent characteristics were investigated. Sharp emission at the wavelength of 615 nm has been observed from the triple-layer and multiple quantum-well structures containing Eu complex. Details on the electrical properties of these structures will be also discussed.

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유기금속화학기상증착법을 이용한 청색 발광 InGaN/GaN MQWs의 성장에 관한 연구 (Growth of Blue Light Emitting InGaN/GaN MQWs by Metalorganic Chemical Vapor Deposition)

  • 김동준;문용태;송근만;박성주
    • 대한전자공학회논문지SD
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    • 제37권12호
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    • pp.11-17
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    • 2000
  • 저압 유기금속화학기상증착법을 이용하여 효율적인 청색 발광을 하는 InGaN/GaN multiple quantum wells(MQWs)을 성장시키고, InGaN/GaN MQWs의 광학적 및 계면 구조 특성을 고찰하였다. 보다 효율적인 청색 발광을 하는 InGaN/GaN MQWs을 성장시키기 위하여, MQWs의 성장온도 및 InGaN 우물층과 GaN 장벽층의 두께를 변화시켜 최적 조건을 확립하였다. 특히, GaN 장벽층의 두께 변화가 InGaN 우물층과 GaN 장벽층간 계면의 구조적 특성에 지대한 영향을 미침을 확인하였다. X-ray 회절분석결과와 고분해능의 투과전자현미경 사진 분석으로부터 MQW 구조의 InGaN 우물층과 GaN 장벽층간의 계면이 매우 급준함을 발견할 수 있었다. 또한, 상온 PL 스펙트럼에서 72.6meV의 매우 좁은 반치폭을 갖는 단일 피크가 463.5nm에서 확인되었다.

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Eco-Friendly Emissive ZnO-Graphene QD for Bluish-White Light-Emitting Diodes

  • Kim, Hong Hee;Son, Dong Ick;Hwang, Do-Kyeong;Choi, Won Kook
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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    • pp.627-627
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    • 2013
  • Recently, most studies concerning inorganic CdSe/ZnS quantum dot (QD)-polymer hybrid LEDs have been concentrated on the structure with multiple layers [1,2]. The QD LEDs used almost CdSe materials for color reproduction such as blue, green and red from the light source until current. However, since Cd is one of six substances banned by the Restriction on Hazardous Substances (RoHS) directive and classified into a hazardous substance for utilization and commercialization as well as for use in life, it was reported that the use of CdSe is not suitable to fabricate a photoelectronic device. In this work, we demonstrate a novel, simple and facile technique for the synthesis of ZnO-graphene quasi-core.shell quantum dots utilizing graphene nanodot in order to overcome Cd material including RoHS materials. Also, We investigate the optical and structural properties of the quantum dots using a number of techniques. In result, At the applied bias 10 V, the device produced bluish-white color of the maximum brightness 1118 cd/$m^2$ with CIE coordinates (0.31, 0.26) at the bias 10 V.

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Improving current and luminous efficacy of red phosphorescent Organic Light Emitting Diodes (OLEDs) by introducing graded-layer device designs enabled by Organic Vapor Phase Deposition (OVPD)

  • Schwambera, Markus;Keiper, Dietmar;Meyer, Nico;Heuken, Michael;Lindla, Florian;Bosing, Manuel;Zimmermann, Christoph;Jessen, Frank;Kalisch, Holger;Jansen, Rolf H.;Gemmern, Philipp Van;Bertram, Dietrich
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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    • pp.1140-1143
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    • 2009
  • Organic Vapor Phase Deposition (OVPD) equipment enables the accurate and simultaneous control of deposition rates of multiple materials as well as their homogenous mixing in the gas phase. Graded or even cross-faded layers by varying carrier gas flow are options to improve OLED performances. As example, we will show how the efficacies of standard red phosphorescent OLEDs with sharp interfaces can be increased from 18.8 cd/A and 14.1 lm/W (1,000 cd/$m^2$) to 36.5 cd/A (+94 %, 18 % EQE) and 33.7 lm/W (+139 %) by the introduction of cross-fading, which is a controlled composition variation in the organic film.

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GaN 기반 LED구조의 p-GaN층 성장온도에 따른 광학적, 결정학적 특성 평가 (Optical and microstructural behaviors in the GaN-based LEDs structures with the p-GaN layers grown at different growth temperatures)

  • 공보현;김동찬;김영이;한원석;안철현;최미경;조형균;이주영;김홍승
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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    • pp.144-144
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    • 2008
  • Blue light emitting diode structures consisting of the InGaN/GaN multiple quantum wells were grown by metalorganic chemical vapor deposition at different growth temperatures for the p-GaN contact layers and the influence of growth temperature on the emission and microstructural properties was investigated. The I-V and electroluminescence measurements showed that the sample with a p-GaN layer grown at $1084^{\circ}C$ had a lower electrical turn-on voltage and series resistance, andenhanced output power despite the low photoluminescence intensity. Transmission electron microscopy (TEM) revealed that the intense electro luminescence was due to the formation of a p-GaN layer with an even distribution of Mg dopants, which was confirmed by TEM image contrast and strain evaluations. These results suggest that the growth temperature should be optimized carefully to ensurethe homogeneous distribution of Mg as well as the total Mg contents in the growth of the p-type layer.

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