• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제49권9호
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• pp.495-501
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• 2000

This paper presents a method to minimize the initial deflection of a multi-layer piezoelectric microactuator without loosing its piezoelectric deflection performance required for light modulating micromirror devices. The multi-layer piezoelectric actuator composed of PZT silicon nitride and platinum layers deflects or buckles due to the gradient of residual stress. Based on the structural analysis results and relationship between process conditions and mechanical properties we have modified the fabrication process and the thickness of thin film layers to reduce the initial residual stress deflection without decreasing its piezoelectric deflection performance. The modified designs fabricated by surface-micromachining process achieved the 77% reduction of the initial deflection compared with that of the conventional method based on the measured micromechanical material properties is applicable to the design refinement of multi-layer MEMS devices and micromechanical structures.

• 한국진공학회지
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• 제12권S1호
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• pp.63-66
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• 2003

It is experimentally shown that a $TiO_2$ film on Si(111) substrate was prepared by using the technique of D.C. reaction sputter deposition with $Ar^{+}$ ion beam bombardment, and a layer-like structure was observed from the depth profile of the interface between $TiO_2$ film and Si substrate with Scanning Electron Microscopy and Electron Probe. It was also surprisingly discovered that Ti atoms could be detected at about 9 $\mu$m depth. The $TiO_2$-Si interface bombarded by $Ar^{+}$ ion beams revealed multi-layer structures, a mechanism might be caused by defect diffusion, impurity and matrix relocation. Multi-relocations of impurity and matrix atoms were as a result of profile broadening of the $TiO_2$-Si interface, and the spread due to matrix relocation in this system is shown to exceed much more the spread due to impurity relocation.

• Steel and Composite Structures
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• 제28권4호
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• pp.415-426
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• 2018

This paper presents a multi-layer finite element for buckling and free vibration analyses of laminated beams based on a higher-order layer-wise theory. An N-layer beam element with (9N + 7) degrees-of-freedom is proposed for analyses. Delamination and slip between the layers are not allowed. Element matrices for the single- and multi-layer beam elements are derived by Lagrange's equations. Buckling loads and natural frequencies are calculated for different end conditions and lamina stacking. Comparisons are made to show the accuracy of proposed element.

• Smart Structures and Systems
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• 제10권6호
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• pp.557-572
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• 2012

This paper focuses on the vibration control of long-span reticulated steel structures under multi-dimensional earthquake excitation. The control system and strategy are constructed based on Magneto-Rheological (MR) dampers. The LQR and Hrovat controlling algorithm is adopted to determine optimal MR damping force, while the modified Bingham model (MBM) and inverse neural network (INN) is proposed to solve the real-time controlling current. Three typical long-span reticulated structural systems are detailedly analyzed, including the double-layer cylindrical reticulated shell, single-layer spherical reticulated shell, and cable suspended arch-truss structure. Results show that the proposed control strategy can reduce the displacement and acceleration effectively for three typical structural systems. The displacement control effect under the earthquake excitation with different PGA is similar, while for the cable suspended arch-truss, the acceleration control effect increase distinctly with the earthquake excitation intensity. Moreover, for the cable suspended arch-truss, the strand stress variation can also be effectively reduced by the MR dampers, which is very important for this kind of structure to ensure that the cable would not be destroyed or relaxed.

• Transactions on Electrical and Electronic Materials
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• 제5권5호
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• pp.173-179
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• 2004

The influence of heavily Si impurity doping in the GaN barrier of InGaN/GaN multi-quantum well structures of blue light emitting diodes were investigated by growing samples in metal-organic chemical vapor deposition. The delta-doped sample was compared to the sample with the undoped barrier. The delta-doped sample shows the tunneling behavior and forms the energy level of 0.32 eV for tunneling and the photoemission of the 450-nm band. The photo-luminescence shows the blue-shifted broad band of the radiative transition due to the inclusion of Si delta-doped layer indicating that the delta doping effect acts to form the higher energy level than that of quantum well. The dislocation may provide the carrier tunneling channel and plays as a source of acceptor. During the tunneling of hot carrier, there was no light emission.

• 한국초전도ㆍ저온공학회논문지
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• 제8권4호
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• pp.8-11
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• 2006

High temperature superconducting coated conductor has various buffer structures on Ni-W alloy. We comparatively studied the growth conditions of a multi buffer layer $(CeO_2/YSZ/CeO_2)$ and a single buffer layer$(CeO_2)$ on textured Ni-W alloy tapes. XRD data showed that the qualities of in-plane and out-of-plane textures of the two type buffer structures were good. Also, we investigated the properties of SmBCO superconducting layer that was deposited on the two type buffer structure. The SmBCO superconducting properties on the single and multi buffer structure showed different critical current values and surface morphologies. FWHM of In-plane and out-of-plane textures were $7.4^{\circ},\;5.0^{\circ}$ in the top CeO2 layer of the multi-buffer layers of $CeO_2/YSZ/CeO_2$, and $7.3^{\circ},\;5.1^{\circ}$ in the $CeO_2$ single buffer layer. $1{\mu}m-thick$ SmBCO superconducting layers were deposited on two type buffer layer. $I_c$ of SmBCO deposited on single and multi buffer were 90 A/cm, 150 A/cm and corresponding $J_c$ were $0.9MA/cm^2,\;1.5MA/cm^2$ at 77K in self-field, respectively.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.319-319
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• 2013

Even though the fabrication methods of metal oxide based thin film capacitor have been well established such as RF sputtering, Sol-gel, metal organic chemical vapor deposition (MOCVD), ion beam assisted deposition (IBAD) and pulsed laser deposition (PLD), an applicable capacitor of printed circuit board (PCB) has not realized yet by these methods. Barium Strontium Titanate (BST) and other high-k ceramic oxides are important materials used in integrated passive devices, multi-chip modules (MCM), high-density interconnect, and chip-scale packaging. Thin film multi-layer technology is strongly demanded for having high capacitance (120 nF/$mm^2$). In this study, we suggest novel multi-layer thin film capacitor design and fabrication technology utilized by plasma assisted deposition and photolithography processes. Ba0.6Sr0.4TiO3 (BST) was used for the dielectric material since it has high dielectric constant and low dielectric loss. 5-layered BST and Pt thin films with multi-layer sandwich structures were formed on Pt/Ti/$SiO_2$/Si substrate by RF-magnetron sputtering and DC-sputtering. Pt electrodes and BST layers were patterned to reveal internal electrodes by photolithography. SiO2 passivation layer was deposited by plasma-enhanced chemical vapor deposition (PE-CVD). The passivation layer plays an important role to prevent short connection between the electrodes. It was patterned to create holes for the connection between internal electrodes and external electrodes by reactive-ion etching (RIE). External contact pads were formed by Pt electrodes. The microstructure and dielectric characteristics of the capacitors were investigated by scanning electron microscopy (SEM) and impedance analyzer, respectively. In conclusion, the 0402 sized thin film multi-layer capacitors have been demonstrated, which have capacitance of 10 nF. They are expected to be used for decoupling purpose and have been fabricated with high yield.

• 한국전기전자재료학회논문지
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• 제13권10호
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• pp.859-864
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• 2000

Recently IR detecting devices using MEMS have been actively studied. Microbolometer, one of these devices, detects the change of resistivity as the change of temperature of the device by absorbing IR, IR absorbing materials for microbolometer should have high TCR value and low noise characteristics which depends on resistivity. We fabricated multi-layer VOx thin films to improve the IR detectivity of uncooled IR devices and analyzed IR absorbing characteristics. We fabricated multi-layer VOx thin films by RF reactive sputtering method on SiNx substrate and changed characteristics using the different thickness of V and V$_2$O$\_$5/ thin films. Then we annealed them under 300$\^{C}$. The TCR (Temperature Coefficient of Resistance) measurement was carried out to estimate the IR detectivity of multi-layer VOx thin films. XRD (X-Ray Diffraction) analysis was carried out to estimate the IR detectivity of multi-layer VOx thin films. ZXRD (X-Ray Diffraction) analysis was used to find out phases and structures of V and V$_2$O$\_$5/ thin films. AES (Auger Electron Spectroscopy) analysis was used to find out composition of multi-layer VOx thin films before and after annealing. We obtained the optimum thickness range of V and V$_2$O$\_$5/ thin films from the result of AES analysis. We changed the thickness of V$_2$O$\_$5/ about 20 to 150 $\AA$ and thickness of V about 10 to 20 $\AA$. As the result of this, TCR value of multi-layer VOx thin films was about -2%/k and the resistivity was ∼1Ωcm.

• 한국세라믹학회지
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• 제46권5호
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• pp.534-539
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• 2009

Reaction Bonded Silicon Carbide(RBSC) has been used for engineering ceramics due to low-temperature fabrication and near-net shape products with excellent structural properties such as thermal shock resistance, corrosion resistance and mechanical strength. Recently, attempts have been made to develop hot gas filter with gradient pore structure by RBSC to overcome weakness of commercial clay-bonded SiC filter such as low fracture toughness and low reliability. In this study a fabrication process of porous RBSC with multi-layer pore structure with gradient pore size was developed. The support layer of the RBSC with multi-layer pore structure was fabricated by conventional Si infiltration process. The intermediate and filter layers consisted of phenolic resin and fine SiC powder were prepared by dip-coating of the support RBSC in slurry of SiC and phenol resin. The temperature of $1550^{\circ}C$ to make Si left in RBSC support layer infiltrate into dip-coated layer to produce SiC by reacting with pyro-carbon from phenol resin.

• 전기전자학회논문지
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• 제25권1호
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• pp.37-41
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• 2021

본 논문에서는 UWB 센서에 응용 가능한 다층기판을 이용한 광대역 특성을 가지는 보우타이 안테나를 설계하였다. 제안된 소형 보우타이 안테나는 2층의 기판으로 설계 및 제작되었으며 전체 안테나의 두께는 4.5mm이다. 제안된 안테나는 보우타이 모양의 방사체와 평면형 발룬으로 구성된다. 설계된 방사체와 발룬의 간단한 연결로 안테나가 설계되도록 하여 다양한 구조로 쉽게 구현 가능하도록 하였다. 제작된 안테나는 6.8~10 GHz의 주파수 범위에서 3~6dBi의 이득을 가졌다.