• Proceedings of the Korean Ceranic Society Conference
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• 2004.10a
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• pp.88.3-88.3
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• 2004

• Proceedings of the Plant Resources Society of Korea Conference
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• 2005.11a
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• pp.60-60
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• 2005

• Proceedings of the KSPS conference
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• 2003.05a
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• pp.32-35
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• 2003

This paper describes our recent work for developing a baseline platform for Korean spoken dialog recognition. In our work, We have collected about 65 hour speech corpus with auditory transcriptions. Linguistic information on various levels such as mophology, syntax, semantics, and discourse is attached to the speech database by using automatic or semi-automatic tools for tagging linguistic information.

• Journal of the Korean Applied Science and Technology
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• v.22 no.3
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• pp.228-233
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• 2005

Langmuir-Blodgett(LB) technique can speak the best candidate of the future molecular electronic devices. But, precursor as molecular ultrathin film devices require the bulk property that are influenced by the molecular orientation. So, this device is one of current interest in molecular electronic device development of new materials. In this study, quantitative evaluation of molecular orientation in LB films of polyamic acid alkylamine salt was performed analysis experiment comparing the absorption or transmission intensity of the FT-IR spectrometer and reflection or absorption spectra with UV-visible absorption spectra. It could find that the polar angle(${\theta}$) of the dipole moment appears in about $68^{\circ}$ and the tilting angle of the alkyl chain is about $11.5^{\circ}$.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.54 no.2
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• pp.51-54
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• 2005

In this work, the attempt has been made to investigate the morphology of self-assembled dipyridinium dithioacetate on Au(111) substrate by Scanning Tunneling Microscopy(STM). Also, we measured electrical properties(I-V) using Scanning Tunneling Spectroscopy(STS). Sample used in this experiment is dipyridinium dithioacetate, which contains thiol functional group, this structure that can be self-assembled easily to Au(111) substrate. The self-assembly procedure was used for two different concentrations, 0.5 mM/ml and 1 mM/ml. Dilute density of sample by 0.5 mM/ml, 1 mM/ml and observed dipyridinium dithioacetate's image by STM after self-assembled on Au(111) substrate. The structure of STM tip-SAMs-Au(111) substrate has been used measurement for electrical properties(I-V) using STS. The current-voltage(I-V) measurement result, observed negative differential resistance(NDR) properties.

• Journal of IKEEE
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• v.18 no.2
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• pp.234-239
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• 2014

This paper proposes a new automatic detection method to inspect mura defects on display film surface using morphological image processing and labeling. This automatic detection method for mura defects on display films comprises 3 phases of preprocessing with morphological image processing, Gabor filtering, and labeling. Since distorted results could be obtained with the presence of non-uniform illumination, preprocessing step reduces illumination components using morphological image processing. In Gabor filtering, mura images are created with binary coded mura components using Gabor filters. Subsequently, labeling is a final phase of finding the mura defect area using the difference between large mura defects and values in the periphery. To evaluate the accuracy of the proposed detection method, detection rate was assessed by applying the method in 200 display film samples. As a result, the detection rate was high at about 95.5%. Moreover, the study was able to acquire reliable results using the Semu index for luminance mura in image quality inspection.

• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1577-1579
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• 2003

AlN thin films are prepared on Si (111) substrate by RF magnetron sputtering. Two-step deposition method is proposed to obtain AlN thin films with high c-axis (002)-TC value and low surface roughnesses. For all the deposited AlN films, the c-axis (002)-orientation, surface mophology, and roughness are characterized in terms of deposition conditions FEAR devices with Al/AlN/Mo/Si(111) configuration are also fabricated. From the frequency response characteristics, the return loss and electromechanical coupling contant($k_t{^2}$) are estimated.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.266.2-266.2
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• 2016

최근 디스플레이 산업의 확대에 따라 투명 전도 산화물(Transparent Conducting Oxides:TCOs)의 수요가 급증하고 있다. 이 중 ZnO는 wide bandgap (3.37eV)와 large exciton binding energy (60meV)의 값을 가져 차세대 투명 전도 산화물, LED와 LD 등의 소자 소재로 각광받고 있다. ZnO는 electron을 내어놓는 native defect 때문에 기본적으로 n-type 물성을 띈다. 그래서 dopant를 이용해 p-type ZnO를 제작할 때 native defect를 줄이는 것이 중요한 요점이 된다. 이 때 buffer layer를 사용하여 native defect를 줄이는 방법이 사용되고 있다. 본연구에서는 RF-magnetron sputtering법을 이용하여 c-plane sapphire 기판 위에 다양한 조건의 ZnO buffer layer를 증착하고, 그 위에 ZnO:(Al,P) co-doping한 APZO를 증착하였다. ZnO buffer layer 증착조건의 변수는 증착온도와 Ar:O2의 비율을 변수로 두었다. 이러한 박막을 FE-SEM, XRD, Hall effect measurement, AFM을 통하여 미세구조와 물성을 관찰하였다. 이 때 APZO보다 낮은 증착온도에서 ZnO buffer layer가 증착되면 APZO를 증착하는 동안 chamber 내부에서 열처리하는 효과를 얻게 되고, UHV(Ultra High Vaccum)에서 열처리 될 때 ZnO buffer layer의 mophology와 결정성이 변하게 되는 모습을 관찰아혔다. 또한 본 실험을 통해 ZnO buffer layer의 증착 온도가 APZO의 증착온도보다 높을 때 제어 가능한 실험이 됨을 확인 할 수 있었다.

• Journal of the Korean Ceramic Society
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• v.22 no.2
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• pp.3-10
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• 1985

In the study the characteristics change of crystallized $Li_2O$.$Al_2O_3$.$SiO_2$ glass-ceramics when varying RO ratio and increasing Al2O3 were investigated to produce a glass-ceramics with high mechanical strength and low thermal expansion. Parent glass was obtained by melting at 1,350~1,40$0^{\circ}C$ for 3 hours and annealing at 45$0^{\circ}C$ and the various physical characteristics were measured. Results were as follows; 1. When ZnO was replaced by MgO thermal expansion coefficient was lowered when increasing ZnO content. 2. Major crystal phase was $\beta$-spodumene the crystal growth mophology was the three dimensional sphere and the activation energy for crystallization was 54.6 Kcal/mol. 3. Parent glass heat-treated at 95$0^{\circ}C$ for 10 hours had ; a) thermal expansion coeff. of $23.2{\times}10^{-7}$/$^{\circ}C$ b)whiteness of 76 c) microhardness of 1,089kg/$mm^2$

• Journal of Korea Foundry Society
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• v.21 no.6
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• pp.350-358
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• 2001

The machinability of cast iron is closely related to its microstructural property. In this study, the effect of graphite mophology and matrix microstructure on machinability in several commercial cast irons(GC 25, GCD 45, GCD 50, GCD 70, GCD HSMo, GCMP) was investigated. To estimate the machinability, turning test was carried out under conditions of spindle speed 80m/min, depth of cut 0.25mm, feed 0.16mm/rev and cutting distance 1 km. Thrust force in turning test decreases in the order of GCMP, GCD 70, GCD 50, GC 25, GCD 45 and GCD HSMo. i.e. machinability increases in this order. The superior machinability of GC 25 is caused by flake type graphite which acts as chip braker and provides lubrication during machining. Consequently, soft ferritic cast irons exhibit superior machinability compared with pearlitic cast irons.