• Korean Journal of Optics and Photonics
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• v.14 no.4
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• pp.355-358
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• 2003

We report experimental results on the wavelength and polarization selective coupling properties of fiber-to-planar waveguide coupler having a thin metal intermediate layer. The influence of the metal layer thickness and the refractive index of the superstrate on the device properties has been measured and explained. The proposed device exhibited various application possibilities including polarizers, modulators, and sensors.

• Journal of the Optical Society of Korea
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• v.18 no.6
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• pp.646-649
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• 2014

Performances of spectrum-sliced channels are strongly affected by their relative intensity noise (RIN). We use polarization-independent optical modulators (PIOMs) for spectrum-sliced channels to suppress their RIN. The PIOM driven by a high sinusoidal voltage signal evenly redistributes optical frequency components in the spectral domain and reduces the RIN. It can be used at a broadband light source (BLS) output to produce spectrum-sliced channels having lower RIN values. Also, it can be used for each spectrum-sliced channel within each optical network unit (ONU). In our experiment, where 12.5-GHz-spaced spectrum-sliced channels are used in 1-GbE speed, the use of PIOM at the BLS output reduces the bit error rate (BER) of the spectrum-sliced channel by more than an order of magnitude. The use of PIOM within the ONU reduces the BER by approximately 3 orders of magnitude.

• ETRI Journal
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• v.26 no.4
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• pp.307-314
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• 2004

The application of a discrete pseudomorphic high electron mobility transistor (p-HEMT) as a grounded switch allows for the development of low cost phase shifters and phase modulators operating in a Ku band. This fills the gap in the development of phase control devices comprising p-i-n diodes and microwave monolithic integrated circuits (MMICs). This paper describes a discrete p-HEMT characterization and modeling in switching mode as well as the development of a low-cost four-bit phase shifter and direct quadrature phase shift keying (QPSK) modulator. The developed devices operate in a Ku band with parameters comparable to commercially available MMIC counterparts. Both of them are CMOS compatible and have no power consumption. The parameters of the QPSK modulator are very close to the requirements of available standards for satellite earth stations.

• Journal of the Korean Institute of Telematics and Electronics
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• v.6 no.4
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• pp.20-30
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• 1969

Several new modulators using Voltage Variable Capacitance Diode are discribed. It was investigated that amplitude modulation which does not need modulation power is obtained by mdulation VVC diode as a tuning element of the quartz oscillator circuit. It offers a good AM system for carryphones in the citizen bands. While frequency modulated quartz oscillators coupled with a quarter wave network were tested as a wide band frequency modulator, Hartley type transistor oscillator offers the most stable and reproducibel FM quartz oscillator.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.43 no.6 s.312
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• pp.48-60
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• 2006

This paper presents three PWM modulators using CMOS OTAs. They consist of a ramp integrator and current-tunable Schmitt triggers. Prototype circuits built using discrete components exhibited that their duty cycles are linearly controllable. The proposed modulators can be easily fabricated in a monolithic IC, because they have a simple structure.

• Journal of Magnetics
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• v.8 no.1
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• pp.50-59
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• 2003

Spatial light modulators (SLMs) are centrally important devices in volumetric recording, data Processing, Pattern recognition and other optical systems. Various types of reusable SLMs with two-dimensional pixel arrays have been intensively developed. Of these, magneto-optic spatial light modulators (MOSLMs) have advantages of high switching speed, robustness, nonvolatility, and radioactive resistance. In this article, we review recent development work on MOSLMs, mainly in relation to our own studies.

• Journal of Integrative Natural Science
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• v.5 no.2
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• pp.72-78
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• 2012

Multidrug resistance is a major obstacle in cancer chemotherapy. Cancer cells efflux chemotherapeutic drug out of cell by means of transporter and reduce the active concentration of it inside cell. Such transporters are member of the ATP binding cassettes (ABC) protein. It includes P-gp, multiple resistant protein (MRP), and breast cancer resistant protein (BCRP). These proteins are widely distributed in the human cells such as kidney, lung, endothelial cells of blood brain barrier etc. However, there are number of drugs developed for it, but most of them are getting transported by it. So, still there is necessity of a good modulator, which could effectively combat the transport of chemotherapeutic agents. Natural products origin modulators were found to be effective against transporter such as flavonoids, which belongs to third generation modulators. They have advantage over synthetic inhibitor in the sense that they have simple structure and abundant in nature. This review focuses on the P-gp structure its architecture, efflux mechanism, herbal inhibitors and their mechanism of action.

• ETRI Journal
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• v.31 no.6
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• pp.765-769
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• 2009

In this paper, we present the fabrication of 40 Gb/s traveling-wave electroabsorption modulator-integrated laser (TW-EML) modules. A selective area growth method is first employed in 40 Gb/s EML fabrication to simultaneously provide active layers for lasers and modulators. The 3 dB bandwidth of a TW-EML module is measured to be 34 GHz, which is wider than that of a lumped EML module. The 40 Gb/s non-return-to-zero eye diagram shows clear openings with an average output power of +0.5 dBm.

• JSTS:Journal of Semiconductor Technology and Science
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• v.11 no.4
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• pp.247-255
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• 2011

This paper describes a CMOS outphasing transmitter using two wideband phase modulators. The proposed architecture can simplify the overall outphasing transmitter architecture using two-point phase modulation in phase-locked loop, which eliminates the necessity digital-to-analog converters, filters, and mixers. This architecture is verified with a WCDMA signal at 1.65 GHz. The prototype is fabricated in standard 130 nm CMOS technology. The measurement results satisfied the spectrum mask and 4.9% EVM performance.

• Journal of the Optical Society of Korea
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• v.11 no.3
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• pp.133-137
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• 2007

We compare electroabsorption modulators (EAMs) with multiple quantum wells (MQWs) based on InGaAs(P)/InP and InGa(Al)As/InAlAs material systems. We carefully choose the quantum-well structures so that the structures based on different material systems have similar band-offset energies and excition-peak wavelengths. Assuming the same light wavelength of $1.55{\mu}m$, we show the transfer functions of EAMs with each quantum-well structure and calculate the escape times of photogenerated charge carriers. As the heavy-hole escape time of the quantum well based on InGaAs(P)/InP is much longer than those of photogenerated charge carriers of InGa(Al)As/InAlAs, the EAM based on the InGa(Al)As/InAlAs material seems to be more suitable for high-optical-power operation.