• Journal of Power Electronics
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• 제7권1호
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• pp.72-80
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• 2007

Voltage sags are one of the most frequently occurring power quality problems challenging power systems today. The Unified Power Quality Conditioner (UPQC) is one of the major custom power solutions that are capable of mitigating the effect of supply voltage sags at the load or Point of Common Coupling (PCC). A UPQC-Q employs a control method in which the series compensator injects a voltage that leads the supply current by $90^{\circ}C$ so that the series compensator at steady state consumes no active power. However, the UPQC-Q has the disadvantage that its series compensator needs to be overrated. Thus it cannot offer effective compensation. This paper proposes a new control scheme for the UPQC-Q that offers minimum power injection. The proposed minimum power injection method takes into consideration the limits on the rated voltage capacity of the series compensator and its control scheme. The validity of the proposed control scheme is investigated through simulation and experimental results.

• Journal of Electrical Engineering and Technology
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• 제13권4호
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• pp.1558-1565
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• 2018

Three-phase current is reconstructed from the dc-link current in an AC machine drive with a single current sensor. Switching pattern modification methods, in which the magnitude of the effective voltage vector is secured over its minimum, are investigated to accurately reconstruct the three-phase current. However, the existing methods that modify the switching pattern cause voltage and current distortions that degrade sensorless performance. This paper proposes a variable-magnitude voltage signal injection method based on a high frequency voltage signal injection. The proposed method generates a voltage reference vector that ensures the minimum magnitude of the effective voltage vector by varying the magnitude of the injection signal. This method can realize high quality current reconstruction without switching pattern modification. The proposed method is verified by experiments in a 600W Interior permanent magnet synchronous machine (IPMSM) drive system.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2007년도 추계학술대회 논문집
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• pp.142-144
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• 2007

이 논문은 세탁기 모터 구동을 위한 단일 전류 센서 방식에서 3상 전류 복원 방법에 대한 기존 방법에 있어서의 문제점 개선 을 위하여 최소전압 주입 방식 과 Smooth 전압 주입 방식을 제시 하고 인버터에서의 전류 복원 향상을 통한 고조파 와 소음 개선 방법을 제시 하였다. 또한 제시된 방식의 타당성을 검증하기 위한 시뮬레이션 및 실험 결과를 고찰하는 것을 목적으로 한다.

• 대한전기학회논문지:전력기술부문A
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• 제50권12호
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• pp.575-583
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• 2001

Dynamic Voltage Restorer(DVR) which is installed between the supply and a critical load can restore voltage disturbances in distribution system. The restoration is based on injecting the same voltages as voltage sags. The ideal restoration is compensation to make the load voltages be unchanged. But voltage restoration involves real power or energy injection and the capability of energy storage is limited. So it must be considered how injection energy can be minimized and voltages can be made close to the voltages before fault. This paper describes conventional restoration techniques, which draw minimum energy from the DVR in order to correct a given voltage sag or swell. And this paper proposes a new concept of restoration technique to inject minimum energy. The proposed method is based on the definition of voltage tolerance in load side. Hence using the proposed method a particular disturbance can be corrected with less amount of storage energy compared to those of conventional methods.

• Journal of Power Electronics
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• 제6권4호
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• pp.330-339
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• 2006

This paper deals with novel electronic ballast based on single-stage power processing topology using a symmetrical half-bridge inverter and current injection circuit. The half-bridge inverter drives the output parallel resonant circuit and injects current through the power factor correction (PFC) circuit. Because of high frequency current injection and high frequency modulated voltage, the proposed circuit maintains the unity power factor (UPF) with low THD even under wide variation in ac input voltage. This circuit needs minimum and lower sized components to achieve the UPF and high efficiency. This leads to an increase in reliability of ballast at low cost. Furthermore, to reduce cost, the electronic ballast is designed for two series-connected fluorescent lamps (FL). The analysis and experimental results are presented for ($2{\times}36$ Watt) fluorescent lamps operating at 50 kHz switching frequency and input line voltage (230 V, 50 Hz).

• 한국광학회:학술대회논문집
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• 한국광학회 2000년도 하계학술발표회
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• pp.162-163
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• 2000

We have observed the short-channel effect, narrow-channel effect and small-geometry effect in terms of a variation of the threshold voltage. For a short-channel effect the threshold voltage was largely determined by the DIBL effect which stimulates more carrier injection in the channel by reducing the potential barrier between the source and channel. The effect becomes more significant for a shorter-channel device. However, the potential, field and current density distributions in the channel along the transverse direction showed a better uniformity for shorter-channel devices under the same voltage conditions. The uniformity of the current density distribution near the drain on the potential minimum point becomes worse with increasing the drain voltage due to the enhanced DIBL effect. This means that considerations for channel-width effect should be given due to the variation of the channel distributions for short-channel devices. For CCDs which are always operated at a pinch-off state the channel uniformity thus becomes significant since they often use a device structure with a channel length of > 4 ${\mu}{\textrm}{m}$ and a very high drain (or diffusion) voltage. (omitted)

• Journal of Electrical Engineering and Technology
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• 제9권2호
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• pp.489-500
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• 2014

This paper presents a simple modified unipolar carrier-based pulsewidth modulation (CB-PWM) strategy for the three-level neutral-point-clamped (NPC) voltage source inverter (VSI). Analytical expressions for the relationship between modulation reference signals and output voltages are derived. The proposed modulation technique for the three-level NPC VSI includes the maximum and minimum of the three-phase sinusoidal reference voltages with zero-sequence voltage injection concept. The proposed modified CB-PWM strategy incorporates a novel method that requires only of one triangular carrier wave for generate the gating pulses in three-level NPC VSI. It has the advantages of being simplifying the algorithm with no need of complex two/multi-carrier pulsewidth modulation or space vector modulation (SVM) and it's also simple to implement. The possibility of the proposed CB-PWM technique has been verified though computer simulation and experimental results.

• 전기학회논문지
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• 제67권3호
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• pp.374-382
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• 2018

This paper has done a hardware-based approach to increase the modulation index in 3-phase inverters, unlike the conventional software algorithm-based approaches. The minimum required time to measure the currents in a three-phase inverters with shunt resistors has also been analyzed. By the analysis, the longest time in minimum required time is AD conversion time. To shorten the minimum required time, this paper proposed a sample-and-hold(S/H) circuit implemented at the inverter current signal output to retain the current signal. When the linear operation region of an inverter with S/H was compared with that without it, the modulation index was increased by 7.8 %. Inverters with S/H circuits can employ the traditional software algorithms, such as the voltage injection method or current restoration method, and it will yield further increase the modulation index.

• JSTS:Journal of Semiconductor Technology and Science
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• 제17권2호
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• pp.216-222
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• 2017

The most prominent challenge for MOSFET scaling is to reduce power consumption; however, the supply voltage ($V_{DD}$) cannot be scaled down because of the carrier injection mechanism. To overcome this limit, a new type of field-effect transistor using positive feedback as a carrier injection mechanism (FBFET) has been proposed. In this study we have investigated the electrical characteristics of a $Si_{1-x}Ge_x$ FBFET with one gate and one-sided $Si_3N_4$ spacer using TCAD simulations. To reduce the drain bias dependency, $Si_{1-x}Ge_x$ was introduced as a low-bandgap material, and the minimum subthreshold swing was obtained as 2.87 mV/dec. This result suggests that a $Si_{1-x}Ge_x$ FBFET is a promising candidate for future low-power devices.

• 센서학회지
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• 제31권1호
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• pp.41-44
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• 2022

In this study, we have fabricated and characterized vertical double-gate (DG) InGaAs tunnel field-effect-transistors (TFETs) with Al₂O₃/HfO₂ = 1/5 nm bi-layer gate dielectric by employing a top-down approach. The device exhibited excellent characteristics including a minimum subthreshold swing of 60 mV/decade, a maximum transconductance of 141 µS/㎛, and an on/off current ratio of over 10³ at 20℃. Although the TFETs were fabricated using a dry etch-based top-down approach, the values of DIBL and hysteresis were as low as 40 mV/V and below 10 mV, respectively. By evaluating the effects of constant voltage and hot carrier injection stress on the vertical DG InGaAs TFET, we have identified the dominant charge trapping mechanism in TFETs.