• Proceedings of the Earthquake Engineering Society of Korea Conference
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• 1998.10a
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• pp.383-390
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• 1998

이 연구의 목적은 경상분지에 설치되어있는 지진계에 기록된 자료를 이용하여 coda Q값을 계산하고 그것이 어느 정도 주파수에 의존하는 가를 추정해 보는 것이다. 분석한 주파수 영역은 1.5Hz에서 18Hz까지이다. 자료는 3조로 나누어 처리하였으며, 단일 산란 이론을 적용하였다. 그리고 매질의 특성을 살펴보고자 minimum mean free path 와 비탄성 감쇠계수를 계산했다. 계산 결과는 Q0값이 83.85 ~155.88로 단층대를 지나는 경로를 가진 자료에서 비교적 낮은 Q 값이 결정 되었고 n은 0.7615~1.0466이다.

• Journal of the Earthquake Engineering Society of Korea
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• v.3 no.1
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• pp.67-74
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• 1999

In this study, coda Q has been determined by the single scattering model in the Kyeongsang Basin region using the decay of the amplitudes of coda waves on bandpass-filtered seismograms of local microearthquakes in the frequency range 1.5~18 Hz. Reported frequency dependence of Q is of the form $Q_C=Q_O^n$$(83.9{ll}Q_0{ll}155.9,;0.76{ll}n{ll}1.05$. Considering a model incorporating both scattering and intrinsic attenuation, and assuming that the attenuation is entirely due to the scattering loss, the minimum mean free paths are about 51~56 km and the coefficients of inelastic attenuation(${\gamma}$) are between 0.0093 and 0.0098 were found. Earthquake-station paths pass through the fault zone show high attenuation and strong frequency dependency compared to other ones.

• Korean Chemical Engineering Research
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• v.58 no.2
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• pp.307-312
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• 2020

Fluidized bed reactors operated in subatmospheric pressure has been focused because several industrial applications such as vacuum drying and plasma cvd requires reduced pressure fludization. However, the hydrodynamics of fluidized beds in subatmospheric pressure has not been extensively investigated. The pressure drop in the fluidized bed has been measured with variation of downstream pressures from 1.33 to 101.3 kPa in the shallow and deep fluidized beds under the sub-atmospheric pressures. The obtained minimum fluidization velocity of powders is a function of pressure due to the changes of gas density and mean free path. We can experimentally determine the critical Knudsen number and the critical pressure to define the slip regime significantly to influence the hydrodynamics of fluidized beds.

• Journal of the Korean Ceramic Society
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• v.38 no.11
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• pp.973-979
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• 2001

Tin-doped indium oxide (ITO) thin films were deposited using r.f. magnetron reactive sputtering and the electrical properties, such as the resistivity, carrier concentration and mobility, were investigated as a function of the sample position under a given magnetron sputtering condition. The nonhomogeneity of the electrical properties with the sample position was observed under a given magnetron sputtering condition. The resistivity of ITO thin film on the substrate which corresponded to the center of the target had a minimum value, 2∼4$\times$10$\^$-4/$\Omega$$.$cm, and it increased symmetrically when the substrate deviated from the center. The density measurement result also showed that ITO thin film deposited at the center has a maximum density of 7.0g/cm$^3$, which was a relative density of about 97%, and the density decreased symmetrically as the substrate deviated from the center. The nonhomogeneity of electrical properties with the deposition position could be explained with the incidence angle of the source beam alpha, which is related with an atomic self-shadowing effect. It was confirmed experimentally that the density in film affect both the carrier mobility and the conductivity. In the case where the density of ITO thin film is 7.0g/cm$^3$, the magnitude of the mean free path was identical with that of the grain size(the diameter of column). However, in the other cases, the mean free path was smaller than the grain size. These results showed that the scattering of the free electrons at the grain boundary is the major factor for the electrical conduction in ITO thin films having a high density, and there exists other scattering sources such as vacancies, holes, or pores in ITO thin films having a low density.ing a low density.