• Title/Summary/Keyword: microwave sintering

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Pr2NiO4+δ for Cathode in Protonic Ceramic Fuel Cells

  • An, Hyegsoon;Shin, Dongwook;Ji, Ho-Il
    • Journal of the Korean Ceramic Society
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    • v.55 no.4
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    • pp.358-363
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    • 2018
  • To improve the polarization property of cathodes, which is the main factor limiting the performance of protonic ceramic fuel cells (PCFCs), $K_2NiF_4-type$ $Pr_2NiO_{4+{\delta}}$, which is expected to exhibit a triple conducting property (proton, oxygen ion, and hole conductions) was applied to PCFCs and its properties were investigated. Low-temperature microwave heat-treatment was used to achieve both sufficient interface adhesion between the electrolyte and the cathode layers and suppression of the secondary phase formation due to migration of elements such as barium and cerium. Through this fabrication method, a high performance of $0.82W{\cdot}cm^{-2}$ and low ohmic resistance of $0.06{\Omega}{\cdot}cm^2$ were obtained in an $Ni-BaCe_{0.55}Zr_{0.3}Y_{0.15}O_{3-{\delta}}$ | $BaCe_{0.55}Zr_{0.3}Y_{0.15}O_{3-{\delta}}$ | $Pr_2NiO_{4+{\delta}}$ single cell at $650^{\circ}C$. This result verifies that the $K_2NiF_{4+{\delta}}-type$ cathode shows good chemical compatibility which, in turn, will make it a potent candidate as a PCFC cathode.

Microstructure and Microwave Dielectric Properties of Ni-doped $(Zr_{0.8}Sn_{0.2})$TiO$_4$ Ceramics (Ni가 첨가된 $(Zr_{0.8}Sn_{0.2})$TiO$_4$세라믹스의 미세구조와 고주파유전성질)

  • Lee, Dal-Won;Nahm, Sahn;Byun, Jae-Dong;Kim, Myong-Ho
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1996.11a
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    • pp.59-62
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    • 1996
  • The effect of NiO addition on the microstructure and microwave dielectric properties of (Zr$_{0.8}$Sn$_{0.2}$)TiO$_4$(ZST) was investigated. With the NiO addition, a dense ZST body of density higher than 95% has been achieved in the sintering temperature range of 1400 to 150$0^{\circ}C$. Energy dispersive X-ray spectrometry (EDS) analysis of sintered specimen shows the presence of second phase at grain boundaries, which is considered to be NiTiO$_3$. Dielectric constant of the specimen is found to increase linearly with density. Q-values and TC$_{f}$decrease with increasing NiO content. The variation of dielectric properties with NiO content is discussed in term of the second phase. The ZST ceramics with small amount of additive gave $\varepsilon$$_{r}$=38, Q=7000 at 7 GHz and TC$_{f}$=-0.5 ppm/$^{\circ}C$, comparable with the values obtained by previous investigation.stigation.

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Effects of $Mn_2O_3, Y_2O_3$ Additives and Valence State of Mn ion in $Sr(Zr, Ti)O_3$ Microwave Dielectrics ($Sr(Zr, Ti)O_3$ 마이크로파 유전체에 첨가된 $Mn_2O_3, Y_2O_3$ 의 영향과 Mn의 산화상태)

  • 정하균;박도순;박윤창
    • Journal of the Korean Ceramic Society
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    • v.34 no.6
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    • pp.583-590
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    • 1997
  • The effects of Mn2O3 and Y2O3 additives on the microstructure and dielectric properties of Sr(Zr, Ti)O3 have been investigated. Powders with Sr(Zr1-xTix)O3(0$\leq$x$\leq$0.1) composition were prepared by the conventional solid state processing from commercial TiO2 and precipitation-processed ZrO2. The powders containing sintering additives of Mn2O3 and Y2O3 were compacted and then sintered at 1,55$0^{\circ}C$ for 4 h to get>97% relative density. Mn2O3 suppressed the grain growth and Y2O3 enhanced the density of sintered body. The oxidation state of Mn ions were determined by a chemical wet method and EPR spectroscopy. Mn ions were present as Mn2+ and Mn4+ in SrZrO3, while as Mn3+ and Mn4+ in Ti-substituted Sr(Zr, Ti)O3. With the substitution of Ti, the lattice parameters of SrZrO3 decreased and its dielectric constant increased with remarkable decrease in Q value. The dielectric constant of Sr(Zr, Ti)O3 was in the range of 30 to 40, Q values 1,200~5,400 at 6 GHz and temperature coefficient of resonant frequency -67~100 ppm/K.

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Microwave Dielectric Properties of $0.6Mg_4Ta_2O_9-0.4TiO_2$ Ceramics with Sintering Temperature (소결은도에 따른 $0.6Mg_4Ta_2O_9-0.4TiO_2$ 세라믹스의 마이크로파 유전특성)

  • Kim, Jae-Sik;Choi, Eui-Sun;Park, In-Gil;Lee, Young-Hie
    • Proceedings of the KIEE Conference
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    • 2003.07c
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    • pp.1541-1543
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    • 2003
  • The microwave dielectric properties of $0.6Mg_4Ta_2O_9-0.4TiO_2$ ceramics were investigated. All sample of $0.6Mg_4Ta_2O_9-0.4TiO_2$ ceramics were prepared by the conventional mixed oxide method, and sintered in the temperature of $1350^{\circ}C{\sim}1450^{\circ}C$. The structural properties of $0.6Mg_4Ta_2O_9-0.4TiO_2$ ceramics were investigated by the X-ray diffraction meter. According to the X-ray diffraction patterns of $0.6Mg_4Ta_2O_9-0.4TiO_2$ ceramics, the major phase of the hexagonal $0.6Mg_4Ta_2O_9-0.4TiO_2$ were presented, In the case of $0.6Mg_4Ta_2O_9-0.4TiO_2$ ceramics sintered at $1400^{\circ}C$ for 5hr., the dielectric constant, quality factor and temperature coefficient of resonant frequency were 12.19, 109.411GHz, -17.21ppm/$^{\circ}C$, respectively.

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Microwave dielectric properties of $ZnNb_2O_6$ ceramics with zinc-borosilicate glass frit (Zinc-borosilicate glass frit 첨가에 따른 $ZnNb_2O_6$ 세라믹스의 마이크로파 유전 특성)

  • Yoon, Sang-Ok;Kwon, Hyeok-Jung;Kim, Kwan-Soo;Lee, Joo-Young;Shim, Sang-Heung;Park, Jong-Guk
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.06a
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    • pp.292-293
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    • 2006
  • $ZnNb_2O_6$ ceramics were sintered under the presence of zinc-borosilicate(ZBS) glass and resultant microwave dielectric properties were investigated with a view to applying the composition to LTCC technology. The addition of 10~30 wt% ZBS glass ensured successful sintering below $900^{\circ}C$. In general, increased addition of ZBS glass increased sinterability but it decreased the dielectric properties significantly due to the formation of an excessive liquid and second phases. The sintered $ZnNb_2O_6$ ceramics at $900^{\circ}C$ with 25 wt% ZBS glass demonstrated 15.8 in dielectric constant(${\varepsilon}_r$), 5,400 in quality factor($Q{\times}f_0$), and $-98\;ppm/^{\circ}C$ in temperature coefficient of resonant frequency(${\tau}_f$).

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A Study on Physical Properties Of Co3O4-added Ni- Zn Ferrite at High Frequency (Co3O4첨가에 따른 고주파용 Ni-Zn계 ferrite의 물리적 특성 연구)

  • Koh, Jae-Gui
    • Korean Journal of Materials Research
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    • v.12 no.10
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    • pp.791-795
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    • 2002
  • We studied the physical properties of $Co_3$$O_4$-added Ni-Zn ferrite which were sintered at 1050~110$0^{\circ}C$ for 2 hours. X-ray diffraction showed a spinel structure, and optical microscopy showed grain sizes of 5 to 10 $\mu\textrm{m}$. As the sintering temperature was increased from $1050^{\circ}C$ to $1070^{\circ}C$, the initial permeability and magnetic induction increased, and both of the loss factor and the coercive force decreased. The Curie temperatures were about $^234~245{\circ}C$ with added $Co_3$$O_4$. The initial permeability was 350 to 420 and maximum magnetic induction density and coercive force 4870G to 4980G and 0.15 Oe to 0.21 Oe, respectively which were similar to those of Ni-Zn ferrite synthesized in the conventional process. The frequency of specimen was in the range of 1MHz to 300MHz. In the plot of initial permeability vs. frequencies, a $180^{\circ}C$ rotation of the magnetic domain could be perceived in a broad band of microwave before and after the resonance frequency.

Effects of Fluoride Additions on Sintering and Microwave Dielectric Properties of $ZnWO_4$ (Fluoride 첨가가 $ZnWO_4$ 소결 및 고주파 유전특성에 미치는 영향)

  • Lee, Kyoung-Ho;Kim, Yong-Chul;Kim, Hong-Rae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.07b
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    • pp.541-544
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    • 2002
  • In this study, a new LTCC material using $ZnWO_4$-LiF system was attempted with respect to use as a capacitor layer in Front-End Module. Pure $ZnWO_4$ must be sintered above $1050^{\circ}C$ in order to obtain up to 98% of full density. It's measured dielectric constant, quality factor, and temperature coefficient of resonant frequency were 15.5, 74380GHz, and $-70ppm/^{\circ}C$, respectively. LiF addition resulted in an liquid phase formation at $810^{\circ}C$ due to interaction between $ZnWO_4$ and LiF. Therefore $ZnWO_4$ with 0.5~1.5wt% LiF could be densified at $850^{\circ}C$. Addition of LiF slightly lowered the dielectric constant from 15.5 to 14.2~15. In the given LiF addition range, the sintering shrinkage increased with increasing LiF content. $Q{\times}fo$ value, however, decreased with increasing LiF content(or increasing densification). This is originated from the interaction between the liquid phase and $ZnWO_4$ and inhomogeneity of grain morphology.

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Microwave Dielectric Properties of the 0.96$MgTiO_3$-0.04$BaTiO_3$ Ceramics with Sintering Temperature (소결온도에 따른 0.96$MgTiO_3$-0.04$BaTiO_3$ 세라믹스의 마이크로파 유전특성)

  • Choi, Eui-Sun;Lee, Sang-Chul;Lee, Sung-Gap;Bae, Seon-Gi;Lee, Young-Hie
    • Proceedings of the KIEE Conference
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    • 2001.07c
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    • pp.1408-1410
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    • 2001
  • The 0.96$MgTiO_3$-0.04$BaTiO_3$ ceramics were prepared by the conventional mixed oxide method. The structural properties were investigated with sintering temperature and composition ratio by XRD, SEM and EDS. According to the X-ray diffraction patterns of the 0.96$MgTiO_3$-0.04$BaTiO_3$ ceramics, the hexagonal $BaMg_6Ti_6O_{19}$ and ilmenite $MgTiO_3$ structures were coexisted. In the case of the 0.96$MgTiO_3$-0.04$BaTiO_3$ ceramics sintered at 1325$^{\circ}C$, dielectric constant, quality factor and temperature coefficient of resonant frequency were 23.95, 70,200, -55.8ppm/$^{\circ}C$, respectively.

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Low Temperature Sintering Properties of Ti-Te System Ceramics for LTCC Application (LTCC응용을 위한 Ti-Te계 세라믹스의 저온소결 특성)

  • Kim, Jae-Sik;Ryu, Ki-Won;Bae, Seon-Gi;Lee, Young-Hie
    • Proceedings of the KIEE Conference
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    • 2007.07a
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    • pp.1299-1300
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    • 2007
  • In this study, low temperature sintering property of (1-x)$TiTe_{3}O_{8}-xMgTiO_{3}$ ceramics were investigated for LTCC application which enable to cofiring with Ag electrode. $TiTe_{3}O_{8}$ mixed with $MgTiO_3$ to improve the temperature property. In the X-ray diffraction patterns, the columbite structure of $TiTe_{3}O_{8}$ phase and ilmenite structure of $MgTiO_3$ phase were coexisted in all specimens. The bulk densities and dielectric constants were decreased with increasing of $MgTiO_3$. However, the quality factors were increased with $MgTiO_3$ addition. Also, TCRF was shifted to negative(-) direction. Microwave dielectric properties of (1-x)$TiTe_{3}O_{8}-xMgTiO_{3}$ ceramics had similar tendency with calculated value by the mixing rule. The dielectric constant, quality factor and TCRF of $05TiTe_{3}O_{8}-0.5MgTiO_{3}$ ceramics sintered at $830^{\circ}C$ for 3h. were 26.19, 43,290GHz and $-3.9ppm/^{\circ}C$, respectively.

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Low-temperature Sintering and Microwave Dielectric Properties of the B2O3 and CuO-added Ba(Mg1/3Nb2/3)O3 Ceramics (B2O3와 CuO가 첨가된 Ba(Mg1/3Nb2/3)O3 세라믹스의 저온소결과 마이크로파 유전특성 연구)

  • Lim, Jong-Bong;Son, Jin-Ok;Nahm, Sahn;Yoo, Myong-Jea;Lee, Woo-Sung;Kang, Nam-Kee;Lee, Hwack-Joo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.18 no.1
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    • pp.38-42
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    • 2005
  • B$_2$O$_3$ added Ba(Mg$_{1}$3/Nb$_{2}$3/)O$_3$ (BBMN) ceramics were not sintered below 900 $^{\circ}C$. However, when CuO was added to the BBMN ceramic, it was sintered even at 850 $^{\circ}C$. The amount of the $Ba_2$B$_2$O$_{5}$ second phase decreased with the addition of CuO. Therefore, the CuO additive is considered to react with the B$_2$O$_3$ inhibiting the reaction between B$_2$O$_3$ and BaO. Moreover, it is suggested that the solid solution of CuO and B$_2$O$_3$ might be responsible for the decrease of the sintering temperature of the specimens. A dense microstructure without pores was developed with the addition of a small amount of CuO. However, a porous microstructure with large pores was formed when a large amount of CuO was added. The bulk density, the dielectric constant ($\varepsilon$$_{r}$) and the Q-value increased with the addition of CuO but they decreased when a large amount of CuO was added. The variations of those properties are closely related to the variation of the microstructure. The excellent microwave dielectric properties of Qxf = 21500 GHz, $\varepsilon$$_{r}$ = 31 and temperature coefficient of resonance frequency($\tau$$_{f}$) = 21.3 ppm/$^{\circ}C$ were obtained for the Ba(Mg$_{1}$3/Nb$_{2}$3/)O$_3$+2.0 mol%B$_2$O$_3$+10.0 mol%CuO ceramic sintered at 875 $^{\circ}C$ for 2 h.h.2 h.h.