• Korean Journal of Remote Sensing
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• v.39 no.5_1
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• pp.563-576
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• 2023

In this study nitrogen dioxide (NO₂), formaldehyde (HCHO) from the Ozone Monitoring Instrument (OMI) and TROPOspheric Monitoring Instrument (TROPOMI), OMI/ Microwave Limb Sounder (MLS) tropospheric column ozone (TCO), and Airkorea ground-based O₃ data were analyzed to examine the photochemical reaction relationship between tropospheric ozone and its precursors nitrogen oxides (NOx) and volatile organic compounds (VOCs). As a result of analyzing the trend of long-term changes from 2006 to 2020 using OMI satellite data, TCO showed an increasing trend, NO₂ steadily decreased, and HCHO continued to increase in Northeast Asia. In addition, formaldehyde nitrogen dioxide ratio (FNR; HCHO/NO₂ ratio), an indicator of ozone sensitivity, is gradually increasing, which means that the VOC-limited regime is decreasing. This study conducted a sensitivity analysis of ozone generation using TROPOMI FNR and ground-based ozone (O₃) over the recent years (2019~2022) to identify the possible cause for the continuous increase of ozone in Korea. Similar to the previous studies, VOC-limited and transitional regimes appeared in megacities, and VOC-limited regimes also appeared in areas where major power plants were located. In VOC-limited regimes, in other words, areas where NOx is excessively saturated, the reduction in NOx emissions may have weakened the ozone titration and thus led to the increase of ozone. Therefore, VOC emissions should be reduced in the short term rather than NOx emissions to reduce ozone concentrations under the VOC-limited regime.

• Journal of the Korean Magnetics Society
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• v.9 no.4
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• pp.190-195
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• 1999

The crystallographic and magnetic properties of the system of $Fe_{1-x}Co_x$(x=0.2 and 0.4) prepared by microwave arc-melting with the maximum power of 3.5 kW and a iron-foil with thickness of 25 ${\mu}{\textrm}{m}$ have been studied by the methods of X-ray diffraction and the measurement of the magnetic hysteresis using the vibrating sample magnetometer at room temperature. The samples were prepared in three different ways: First, pellet form pressed under the pressure of 9,000 N/$\textrm{cm}^2$. Second, the sheet cold rolled. Third, thin sheet treated with the temperature of 90$0^{\circ}C$. The X-ray diffraction pattern of the sample prepared by the first method shows that the crystal structure of the sample is bcc as same as that of Fe with a good uniformity. The iron-foil has the coercivity of 43 Oe and the initial slope of magnetization of 0.328 emu/gOe. The coervicity and magnetization of the sample prepared by the second method increased as the Co content increased. But the initial slop of the magnetization decreased as the Co content increased. This means that the displacement of domain wall is suppressed by the increases of coercivity as the Co content increased. The saturation magnetization of the samples made by the third method increased. On the other hand, the coercivity of these samples decreased. The increase of saturation magnetization of the samples seems to be related to the changes in X-ray intensity after heat treatment. Also some magnetic parameters of the samples were calculated by using a simple model and compared with other values.

• Applied Biological Chemistry
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• v.30 no.2
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• pp.179-185
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• 1987

The physicochemical properties and characteristics of sweet potato starches which were isolated from the six varieties were investigated. The shapes of starch granules which observed through photomicroscope and scanning electron microscope lucre round and polygonal, but those of the Shinmi were most polygonal, and the average diameters were in the range of $10.4{\sim}14.2$ microns. The amylose contents were between 25% and 28%, and blue values and alkali numbers were in the range of $0.29{\sim}0.36$, $7.0{\sim}12$, respectively. The swelling power and solubility patterns of the starches were negligible until $50^{\circ}C$, thereafter it increased rapidly and the Eunmi showed highest water binding capacity of 211.6%. Amylogram pattern of 6% starch solutions were similar to no peak viscosity, but maximum viscosity varied widely with varieties. A significant positive correlation was observed between amylose content and average gelatinization temperature. Taste and texture of the steam cooked sweet potatoes were negatively and positively correlated with moisture and amylose contents, respectively, while those of the microwave cooked sweet potatoes were only positively correlated with amylose contents.

• Korean Journal of Materials Research
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• v.10 no.3
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• pp.212-217
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• 2000

Dielectric thin films for TFT(thin film transistor)s, such as silicon nitride$(Si_3N_4)$ and silicon oxide$(SiO_2)$, are usually deposited at $200~300^{\circ}C$. In this study, authors have tried to form dielectric films not by deposition but by oxidation with ECR(Electron Cyclotron Resonance) oxygen plasma, to improve the interface properties was not intensionally heated during oxidation. THe oxidation was performed consecutively without breaking vacuum after the deposition of a-Si: H films on the substrate to prevent the introduction of impurities. In this study, especially pulse mode of microwave power has been firstly tried during FCR oxygen plasma formation. Compared with the case of the continuous wave mode, the oxidation with the pulsed ECR results in higher quality silicon oxide$SiO_X$ films in terms of stoichiometry of bonding, dielectric constants and surface roughness. Especially the surface roughness of the pulsed ECR oxide films dramatically decreased to one-third of that of the continuous wave mode cases.

• Journal of the Korean Vacuum Society
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• v.7 no.3
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• pp.267-267
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• 1998

The fluorine doped silicon oxide (SiOF) intermetal dielectric (IMD) films have been of interest due to their lower dielectric constant and compatibility with existing process tools. However instability issues related to bond and increasing dielectric constant to water absorption when the SiOF films was exposured to atmospheric ambient. Therefore, the purpose of this research is to study the effect of post oxygen plasma treatment on the resistance of moisture absorption and reliability of SiOF film. Improvement of moisture absorption resistance of SiOF film is due to the forming of thin SiO₂layer at the SiOF film surface. It is thought that the main effect of the improvement of moisture absorption resistance was densification of the top layer and reduction in the number of Si-F bonds that tend to associate with OH bonds. However, the dielectric constant was increased when plasma treatment time is above 5 min. In this study, therefore, it is thought that the proper plasma treatment time is 3 min when plasma treatment condition is 700 W of microwave power, 3 mTorr of process pressure and 300℃ of substrate temperature.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.18 no.6
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• pp.44-52
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• 2017

In this paper, we propose a DFD (Digital Frequency Discriminator) design that has better frequency discrimination and a smaller size. Electronic warfare equipment can analyze different types of radar signal such as those based on Frequency, Pulse Width, Time Of Arrival, Pulse Amplitude, Angle Of Arrival and Modulation On Pulse. In order for electronic warfare equipment to analyze radar signals with a narrow pulse width (less than 100ns), they need to have a special receiver structure called IFM (Instantaneous Frequency Measurement). The DFD (Digital Frequency Discriminator) is usually used for the IFM. Because the existing DFDs are composed of separate circuit devices, they are bulky, heavy, and expensive. To remedy these shortcomings, we use a three delay line ($1{\lambda}$, $4{\lambda}$, $16{\lambda}$) in the DFD, instead of the four delay line ($1{\lambda}$, $4{\lambda}$, $16{\lambda}$, $64{\lambda}$) generally used in the existing DFDs, and apply the microwave integrated circuit method. To enhance the frequency discrimination, we detect the pulse amplitude and perform temperature correction. The proposed DFD has a frequency discrimination error of less than 1.5MHz, affording it better performance than imported DFDs.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.7
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• pp.727-732
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• 2008

Recently, according to the increase of using the microwave equipments, the interests in effects on human body have been also increased. For example, there have been many researches on making the standard the specific absorbing ratio (SAR) caused by mobile phones. However, it is needed to study on the induced current on human body caused by HF(Hight Frequency) band which can deeply penetrate the human body. Especially, since the RFID systems are applied to the transportation card and the library, it is hooded to research on the effect on human body exposed to the radiated power from the RFID system. In this paper, we designed a cylindrical monopole antenna model of human body exposed to 13.56 MHz RFID system, which can model the induced current on human body. To verify the proposed equivalent antenna model, we compared the induced currents between human body and the equivalent antenna model.

• Applied Chemistry for Engineering
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• v.8 no.3
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• pp.395-402
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• 1997

The $SiO_2$ films were prepared by ECR(electron cyclotron resonance) plasma diffusion method, Deal-Grove model and Wolters-Zegers-van Duynhoven model were used to estimate the oxidation rate which was correlated with surface morphology for different orientation of Si(100) and Si(111). It was seen the $SiO_2$ thickness increased linearly with initial oxidation time. But oxidation rate slightly decrease with oxidation time. It was also shown that the oxidation process was controlled by the diffusion of the reactive species through the oxide layer rather than by the reaction rate at the oxide interface. The similar time dependency has been observed for thermal and plasma oxidation of silicon. From D-G model and W-Z model, the oxidation rate of Si(111) was 1.13 times greater than Si(100) because Si(111) had higher diffusion and reaction rate, these models more closely fits the experimental data. The $SiO_2$ surface roughness was found to be uniform at experimental conditions without etching although oxidation rate was increased, and to be nonuniform due to etching at experimental condition with higher microwave power and closer substrate distance.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.12
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• pp.1350-1359
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• 2008

This paper presents a wideband doubly balanced resistive mixer fabricated using $0.5{\mu}m$ GaAs p-HEMT process. Three baluns are employed in the mixer. LO and RF baluns operating over an 8 to 20 GHz range were implemented with Marchand baluns. In order to reduce chip size, the Marchand baluns were realized by the meandering multicoupled line and inductor lines were inserted to compensate for the meandering effect. IF balun was implemented through a DC-coupled differential amplifier. The size of IF balun is $0.3{\times}0.5\;mm^2$ and the measured amplitude and phase unbalances were less than 1 dB and $5^{\circ}$, respectively from DC to 7 GHz. The mixer is $1.7{\times}1.8\;mm^2$ in size, has a conversion loss of 5 to 11 dB, and an output third order intercept(OIP3) of +10 to +15 dBm at 16 dBm LO power for the operating bandwidth.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.68.1-68.1
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• 2012

The best part of graphene is - charge-carriers in it are mass less particles which move in near relativistic speeds. Comparing to other materials, electrons in graphene travel much faster - at speeds of $10^8cm/s$. A graphene sheet is pure enough to ensure that electrons can travel a fair distance before colliding. Electronic devices few nanometers long that would be able to transmit charge at breath taking speeds for a fraction of power compared to present day CMOS transistors. Many researches try to check a possibility to make it a perfect replacement for silicon based devices. Graphene has shown high potential to be used as interconnects in the field of high frequency electrical devices. With all those advantages of graphene, we demonstrate characteristics of electrical and optical properties of graphene such as the effect of graphene geometry on the microwave properties using the measurements of S-parameter in range of 500 MHz - 40 GHz at room temperature condition. We confirm that impedance and resistance decrease with increasing the number of graphene layer and w/L ratio. This result shows proper geometry of graphene to be used as high frequency interconnects. This study also presents the optical properties of graphene oxide (GO), which were deposited in different substrate, or influenced by oxygen plasma, were confirmed using different characterization techniques. 4-6 layers of the polycrystalline GO layers, which were confirmed by High resolution transmission electron microscopy (HRTEM) and electron diffraction analysis, were shown short range order of crystallization by the substrate as well as interlayer effect with an increase in interplanar spacing, which can be attributed to the presence of oxygen functional groups on its layers. X-ray photoelectron Spectroscopy (XPS) and Raman spectroscopy confirms the presence of the $sp^2$ and $sp^3$ hybridization due to the disordered crystal structures of the carbon atoms results from oxidation, and Fourier Transform Infrared spectroscopy (FTIR) and XPS analysis shows the changes in oxygen functional groups with nature of substrate. Moreover, the photoluminescent (PL) peak emission wavelength varies with substrate and the broad energy level distribution produces excitation dependent PL emission in a broad wavelength ranging from 400 to 650 nm. The structural and optical properties of oxygen plasma treated GO films for possible optoelectronic applications were also investigated using various characterization techniques. HRTEM and electron diffraction analysis confirmed that the oxygen plasma treatment results short range order crystallization in GO films with an increase in interplanar spacing, which can be attributed to the presence of oxygen functional groups. In addition, Electron energy loss spectroscopy (EELS) and Raman spectroscopy confirms the presence of the $sp^2$ and $sp^3$ hybridization due to the disordered crystal structures of the carbon atoms results from oxidation and XPS analysis shows that epoxy pairs convert to more stable C=O and O-C=O groups with oxygen plasma treatment. The broad energy level distribution resulting from the broad size distribution of the $sp^2$ clusters produces excitation dependent PL emission in a broad wavelength range from 400 to 650 nm. Our results suggest that substrate influenced, or oxygen treatment GO has higher potential for future optoelectronic devices by its various optical properties and visible PL emission.