• Title/Summary/Keyword: microwave oscillator

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A Design of the Triple-push Oscillator using Combiner for RF System (RF 시스템용 합성기를 이용한 Triple-push발진기의 설계)

  • Kim Seok Hun;Sung Kyung
    • Journal of the Korea Society of Computer and Information
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    • v.10 no.1 s.33
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    • pp.175-180
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    • 2005
  • Transmission speed becomes high speedization gradually in system while is the latest microwave and millimeter wave communication and user's demand is trend that also increase rapidly. To accommodate wider band width therefore, signalman who have high frequency and not required welsh suppression special quality little more is required. Designed oscillator, point Parts, in duplex all communication systems several systems studies that can keep pace with a lot of amount of informations in modern info-age are archieved vigrously.

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Simulation of High-Power Magnetron Oscillators Using a MAGIC3D Code (MAGIC3D 코드를 애용한 고출력 마그네트론 발진기의 시뮬레이션)

  • Jung, S.S.
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.55 no.11
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    • pp.538-543
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    • 2006
  • A high-Power continuous-wave (CW) ten-vane double-strapped magnetron oscillator has been investigated using three-dimensional (3D) particle-in-cell (PIC) numerical simulation code, MAGIC3D. The resonant modes and their resonant frequencies of the ten-vane strapped magnetron resonator were obtained to show a large mode separation near the ${\pi}$-mode. An electron cloud formed in an anode-cathode gap, called an interaction space was confined well enough to result in no leakage current. Five spokes were clearly observed in the electron cloud, which definitely ensured the ${\pi}$-mode oscillation in the ten-vane magnetron. Numerical simulations predicted that the saturated microwave output power measured at the coaxial output port was 5.41 kW at the microwave frequency of 893 MHz, corresponding to a power conversion efficiency of 72.6% when the external axial magnetic field was 1150 gauss and the electron beam voltage and current were 6 kV and 1.25 A, respectively.

Analytic Model of Spin-Torque Oscillators (STO) for Circuit-Level Simulation

  • Ahn, Sora;Lim, Hyein;Shin, Hyungsoon;Lee, Seungjun
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.13 no.1
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    • pp.28-33
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    • 2013
  • Spin-torque oscillators (STO) is a new device that can be used as a tunable microwave source in various wireless devices. Spin-transfer torque effect in magnetic multilayered nanostructure can induce precession of magnetization when bias current and external magnetic field are properly applied, and a microwave signal is generated from that precession. We proposed a semi-empirical circuit-level model of an STO in previous work. In this paper, we present a refined STO model which gives more accuracy by considering physical phenomena in the calculation of effective field. Characteristics of the STO are expressed as functions of external magnetic field and bias current in Verilog-A HDL such that they can be simulated with circuit-level simulators such as Hspice. The simulation results are in good agreement with the experimental data.

Millimeter-wave Fast-sweep FM Reflectometry Applied to Plasma Density Profile Measurements

  • Kang, Wook-Kim
    • Journal of electromagnetic engineering and science
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    • v.1 no.1
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    • pp.18-23
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    • 2001
  • A fast-sweep broadband FM reflectometer system has been successfully developed and operacted at the DIII-D tokamak, producing reliable density Profiles with excellent spatial (1 $\leq$ cm) and temporal resolution (~100 $\mu$ s). The system uses a solid-state microwave oscillator and an active quadrupler, covering full Q-band frequencies (33~50 GHz) and providing relatively high output power (20~60 mW). The system hardware allows fu11band frequency sweep in 10 $\mu$ s, but due to digitization rate limit on DIII-D, sweep time was limited to 75~100 $\mu$ s. Fast frequency sweep has helped to reduce density fluctuation effects on the reflectometer phase measurements, thus improving reliability for individual sweeps. The fast-sweep system with high spatial and temporal resolution has allowed to measure fast-changing edge density profiles during plasma ELMS and L-H transitions, thus enabling fast-time sca1e physics studies.

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A D-Band Balanced Subharmonically-Pumped Resistive Mixer Based on 100-nm mHEMT Technology

  • Campos-Roca, Y.;Tessmann, A.;Massler, H.;Leuther, A.
    • ETRI Journal
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    • v.33 no.5
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    • pp.818-821
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    • 2011
  • A D-band subharmonically-pumped resistive mixer has been designed, processed, and experimentally tested. The circuit is based on a $180^{\circ}$ power divider structure consisting of a Lange coupler followed by a ${\lambda}$/4 transmission line (at local oscillator (LO) frequency). This monolithic microwave integrated circuit (MMIC) has been realized in coplanar waveguide technology by using an InAlAs/InGaAs-based metamorphic high electron mobility transistor process with 100-nm gate length. The MMIC achieves a measured conversion loss between 12.5 dB and 16 dB in the radio frequency bandwidth from 120 GHz to 150 GHz with 4-dBm LO drive and an intermediate frequency of 100 MHz. The input 1-dB compression point and IIP3 were simulated to be 2 dBm and 13 dBm, respectively.

Phase Noise Reduction of Microwave HEMT Oscillators Using a Dielectric Resonator Coupled by a High Impedance Inverter

  • Lee, Moon-Que;Ryu, Keun-Kwan;Yom, In-Bok
    • ETRI Journal
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    • v.23 no.4
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    • pp.199-201
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    • 2001
  • The phase noise reduction in a configuration of the HEMT oscillator with a dielectric resonator coupled by a quarter-wavelength impedance inverter is investigated. Two HEMT oscillators for a satellite payload system are manufactured in the same configuration except for the coupling configuration of the dielectric resonator (DR) in order to empirically demonstrate the phase noise reduction. Experimental result shows that a phase noise reduction by 14 dB can be enhanced by increasing the characteristic impedance of a coupling microstrip impedance inverter.

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Analysis of low Phase Noise by Nonlinear parameters of P-HEMT and Microwave Oscillator design (P-HEMT의 비선형해석에 의한 저위상잡음 분석 및 마이크로파 발진기 설계)

  • 김성용;강문형;이영철
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2003.05a
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    • pp.79-82
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    • 2003
  • 본 논문은 마이크로파발진기의 위상잡음 특성에 영향을 미치는 P-HEMT의 비선형 파라미터를 선정하고, 3개의 비선형 파라미터와 최소 위상잡음을 분석하였다. 분석된 P-HEMT가 저 위상잡음을 가지는 최적의 바이어스 동작점을 선정하여, 선정된 바이어스 동작점에서 두 가지 형태의 발진기를 설계하므로 서 발진기의 물리적 구조에 의한 위상 잡음의 영향을 비교하고 위상잡음의 감소방안을 제시하였으며, 이를 이용하여 ku-대역 위상동기유전체공진 발진기를 설계 제작하였다.

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Analysis of Phase Noise Characteristics of Voltage-Control Microwave Oscillator (전압제어 마이크로파 발진기의 위상잡음 특성 분석)

  • 강진래;이승욱;김영진;이영철
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2001.10a
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    • pp.242-245
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    • 2001
  • 본 논문은 디지털 위성용 하향변환기에 적용되는 고안정 전압제어 마이크로파 발진기의 위상잡음 특성을 분석하였다. 전압제어 마이크로파 발진기는 능동소자의 비선형 등가모델과 궤환회로의 영향을 고려하여 유전체 공진 마이크로파 발진기를 위상잡음과 출력 전력에 절충(trade-off)하여 설계하였고, 13.25GHz의 발진주파수에서 출력이득은 12dBm이고, 위상잡음은 옵셋 주파수 100KHz 에서 -107.91dBc를 보였다. 바렉터 다이오드 동작에 의한 튜닝 범위는 2MHz/V로 위상동기 발진기에 응용할 수 있음을 보였다.

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