• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.197-197
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• 2008

There are fast growing demands for new dielectric materials for passive capacitors of RF-ICs and other wireless applications. One of the bulk microwave dielectric materials which have superior properties is $ZrTiO_4$ due to its large dielectric constant and high quality factor. Therefore, $ZrTiO_4$ is worth studying as a form of thin film to be applied for passive capacitors of integrated circuits. In this study, we fabricated metal-insulator-metal type capacitors with $ZrTiO_4$ dielectric thin film, and evaluated their capacitor properties.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.232-235
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• 1999

In this paper, We described the effect of $MoO_3$ Addition and firing temperature on the microwave dielectric properties of $BiNb0_4$ ceramics. The specimens prepared by conventional mixed method was addicted by 0 - 0.03 wt% $MoO_3$ and fired at 860 - $950^{\circ}$ for 3hr. Density increased when $MoO_3$ is below O.Olwt% but decreased when over O.Olwt%. $BiNb0_4$ ceramics addicted with CuO 0.03wt % and $MoO_3$ 0.01 wt% showed microwave dielectric properties, Dielectric constant 37.5, Quality factor[Qx$f_0$]5500, Temperature coefficient of resonance frequency 15ppm/$^{\circ}$

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.405-408
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• 1997

The microwave dielectric properties of CuO and CdO addition of BiNbO$_4$ceramics were investigated. As the content of CdO increased, sintered density and quality factor is decreased. With increase in sintering temperature, the dielectric constant and quality factor is increased. In case of specimen sintered at 96$0^{\circ}C$ with 0.03 wt% CuO and CdO, the microwave dielectric properties obtained were dielectric constant of 41.2, quality factor (Q$\times$f) of 6, 500, temperature coefficient of resonant frequency of ppm/$^{\circ}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.11
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• pp.947-953
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• 1998

The microwave dielectric properties of X BaO-0.15($Nd_{0.87}Bi_{0.13})_2O_3-(0.85-X)TiO_2 (X=0.14~0.17) and 0.16BaO-0.15(Bi_xNd_{1-x})_2O_3-0.69TiO_2$ (X=0.12~0.15) ceramics sintered at 1320~$1380^{\circ}C$ were investigated. The microwave dielectric properties of X BaO-0.15(Nd_{0.87}Bi_{0.13})_2O_3-(0.85-X)TiO_2$ (X=0.14~0.17) can be controlled effectively by adjusting X content : with increasing X from 0.14 to 0.17 both dielectric constant and temperature coefficient of resonant frequency decreased from 94.6 to 86 and from 22 ppm/^${\circ}C to -7 ppm/^{\circ}C$, respectively, while quality factor increased from 1300 to 1920 (at 4GHz). The microwave dielectric properties of 0.16BaO-0.15(Bi_x/Nd_{1-x2}O_3 -0.69TiO_2$ (X=0.12~0.15) can be controlled effectively by adjusting X content : with increasing X from 0.12 to 0.15 both quality factor and temperature coefficient of resonant frequency decreased from 1920 to 1430 and from 9 ppm/^${\circ}C to -10 ppm/^{\circ}C$, respectively, while dielectric constant increased from 87.5 to 92.6.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.3
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• pp.197-201
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• 2001

The microwave dielectric properties of (1-x)Ba(Mg$_{1}$3/Ta$_{2}$3/)O$_3$-xBa(Co$_{1}$3/Nb$_{2}$3)O$_3$(x=0.25~0.5) ceramics depending on the Ba(Co$_{1}$3/Nb$_{2}$3/)O$_3$[BCN] contents and the possibility of application as a microwave dielectric resonator were investigated. The specimens were prepared by he conventional mixed oxide method using there sintering temperature of 1575$^{\circ}C$. It was found that Ba(Mg$_{1}$3/Ta$_{2}$3/)O$_3$[BMT] and BCN formed a solid solution with complex perovskite structure. As the mole fraction of BCN increased, dielectric constant increased while temperature coefficient of resonant frequency decreased. The highest value of quality factor, Qxf$_{0}$=138,205GHz, obtained in the sample of 0.9BMT-0.1BCN ceramics. In the range of x$\geq$0.4, the dielectric constant was about 30. The 0.55BMT-0.45BCN ceramics showed excellent microwave dielectric properties with $\varepsilon$$_{r}$=30.84, Qxf$_{0}$=75,325GHz and $\tau$$_{f}$=2.9015ppm/$^{\circ}C$.EX>.EX>.

• Journal of the Korean Ceramic Society
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• v.49 no.3
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• pp.272-278
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• 2012

Effects of ceramics on the microwave dielectric properties of polytetrafluoroethylene (PTFE) composites filled with $MgTiO_3$ (MTi) and/or $MgTa_2O_6$ (MTa) were investigated. The dielectric constant ($K$), quality factor ($Qf$), and temperature coefficient of resonant frequency ($TCF$) of the composites were dependent on the type and volume fraction ($V_f$) of the ceramics. For the composites mixed with MTa and MTi, the $K$ and $TCF$ values decreased with increasing MTi content. The $Qf$ values of the composites were affected by relative density. The measured $K$ values of the composites were compared with those predicted by several theoretical models. Good microwave dielectric properties with values of $K$=3.6, $Qf$ = 7,788 GHz, and $TCF$ = -0.19 ppm/$^{\circ}C$ were obtained for the composites with 0.1 $V_f$ ceramics (mixed 0.025MTa and 0.075MTi).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.6
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• pp.517-523
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• 2008

The microwave dielectric properties of $LiNb_3O_8-TiO_2$ based ceramics with low firing agents, CuO, $Bi_2O_3$, $B_2O_3$, $SiO_2$, $TiO_2$, were investigated to improve the sintering condition for the LTCC system. According to the X-ray diffraction and SEM, the ceramics of $LiNb_3O_8-TiO_2$ with low firing agents showed no significant second phases within a range of experiments, and fine microstructures. By adding the low firing agents, the sintering temperature decreased from $1200^{\circ}C$ to $925^{\circ}C$. Based on the results of electrical measurements, the $LiNb_3O_8-TiO_2$ ceramics showed a promising microwave dielectric properties for LTCC applications, those are ${\varepsilon}_r$ (dielectric constant) = 44, Q f (quality factor) = 18000, and ${\tau}_f$ (the temperature coefficient of resonant frequency) = $-1.5\;ppm/^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.476-479
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• 2001

The microwave dielectric properties of $[(Pb_{1-x}Ba_{x})_{1/2}La_{1/2}](Mg_{1/2}Nb_{1/2})O_{3}$ ceramics were investigated. When $[(Pb_{0.9}Ba_{0.1})_{1/2}La_{1/2}](Mg_{1/2}Nb_{1/2})O_{3}$ ceramics were sintered at $1250^{\circ}C$ and $1350^{\circ}C$ for 2hr, the microwave dielectric properties were obtained $\varepsilon_{r}=64\sim80$, $Q{\times}f=11,800\sim18,000$. As a result, $[(Pb_{0.9}Ba_{0.1})_{1/2}La_{1/2}](Mg_{1/2}Nb_{1/2})O_{3}$ having $\varepsilon_{r}=80$, $Q{\times}f=11,800$ (at 4 GHz) was developed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.476-479
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• 2001

The microwave dielectric properties of [(Pb$_{1-x}$ Ba$_{x}$)$_{1}$2/La$_{1}$2/](Mg$_{1}$2/Nb$_{1}$2/)O$_3$ ceramics were investigated. When [(Pb$_{0.9}$Ba$_{0.1}$)$_{1}$2/La$_{1}$2/](Mg$_{1}$2/Nb$_{1}$2/)O$_3$ ceramics were sintered at 125$0^{\circ}C$ and 135$0^{\circ}C$ for 2hr, the microwave dielectric properties were obtained $\varepsilon$$_{r}$=64~80, Qxf=11,800~18,000. As a result, [(Pb$_{0.9}$Ba$_{0.1}$)$_{1}$2/La$_{1}$2/](Mg$_{1}$2/Nb$_{1}$2/)O$_3$ having $\varepsilon$$_{r}$=80, Qxf=11,800 (at 4 GHz) was developed.ed.eveloped.ed.

• Electrical & Electronic Materials
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• v.8 no.5
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• pp.594-600
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• 1995

Dielectric properties at microwave frequencies of ($Zr_{0.65}$, $Sn_{0.35}$) $Ti_{1.04}$ $O_{4.04}$ ceramics with additives, NiO as an agent to improve dielectric properties and $B_{2}$ $O_{3}$ as a firing agent were investigated. When 0.5 - 1.5 wt% of NiO is add, the grain growth is inhibited and the shape of the grain is uniformed, Dielectric constant(Fr) and bulk density are increased with raising amount of NiO at sintering temperature of 1330 - 1360.deg. C, but the temperature coefficient of resonant frquency(.epsilon.$_{r}$) decreased gradually as the NiO content increased. The value of Qx $f_{o}$ was increased as the amount of NiO was increased in the range of 0.5 to 1.0 wt% and the Qx $f_{o}$, was decreased slightly with raising sintering temperature. With NiO of 1.0 wt% and at sintering temperature of 1360.deg. C, this ceramics was found to have excellent microwave properties of .epsilon.$_{r}$=37.8, Qx $f_{o}$ = 48.600 and .tau.$_{f}$ = 7 ppm/.deg. C.C.. C.. C.C.. C.. C.