• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.243-246
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• 2004

Boron Phosphide films were deposited on (111) Si substrate at $650^{\circ}C$, by the reaction of $B_2H_6$ with PH, using APCVD. $N_2$ was carried out as carrier gas. The optimal gas rates were 20 ml/min for B2H6, 60 ml/min for PH3 and 1 l/min for N2. After as grown the films were insitu annealed fur 1hour in $N_2$ ambient at $550^{\circ}C$ and measured. The measurement of AFM shows that the average surface roughness is $10.108{\AA}$ for the reaction temperature at $450^{\circ}C$ and $29.626{\AA}$ fur the reaction temperature at $650^{\circ}C$. The measurement of XRD shows that the films have the orientation of(1 0 1). Also, the measurement of AES is shown that the films have $B_{13}P_2$ stoichiometry. For the Result of microwaves absorbtion properties using VNA, it obtained the permittivity of BP about 8 between $1.5{\sim}2.5GHz$. In this study, it obtained the BP thin film by deposited in atmosphere pressure And BP thin film can be after to applicate as microwave absolution material is obtained.

• 한국자기학회지
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• 제18권5호
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• pp.195-199
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• 2008

$Fe_{93.5}Si_{6.5}$ 분말/에폭시 복합재 필름은 열경화과정을 이용하여 준비되었다. 자성분말/에폭시 복합재의 구조와 전자기적 특성 및 전자파 흡수특성을 분석하기 위하여 주사전자현미경(scanning electron microscpoe, SEM), 시료진동형 자력계(vibrating sample magnetometer, VSM), 네트워크 어날라이져(network analyzer) 등을 이용하였다. 분석결과, 포화자속밀도는 복합재 내의 $Fe_{93.5}Si_{6.5}$ 분말이 차지하는 양에 의존하며, 이는 초기투자율에 영향을 미친다. 결과적으로 1 GHz 이상의 주파수에서는 와전류 손실(eddy current loss)이 주요한 인자이며, 자성분말/에폭시 복합재의 공명주파수(resonance frequency)는 복합재 내의 $Fe_{93.5}Si_{6.5}$ 분말의 양이 증가함에 따라 감소한다. 반사손실(reflection loss)은 자성분말/에폭시 복합재의 투자율(permeability)과 유전율(permittivity)로부터 계산에 의해 구해진다. 50 wt% $Fe_{93.5}Si_{6.5}$ 분말의 양과 5 mm 두께를 가진 자성분말/에폭시 복합재는 3.66 GHz와 4.16 GHz 사이에서 -20 dB 이하의 값을 보인다. 따라서 Fe-Si/에폭시 박형 복합재는 마이크로파 흡수체로서 좋은 후보물질이 될 수 있을 것으로 판단된다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.332-335
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• 2004

Boron Phosphide films were deposited on(III) Si substrate at $650^{\circ}C$, by the reaction of $B_2H_6$ with $PH_3$ using CVD. $N_2$ was employed as carrier gas. The optimal gas rates were 20 ml/min for $B_2H_6$, 60 ml/min for $PH_3$ ml/min and $1{\ell}/min$ for $N_2$. The films were annealed for 1hour in $N_2$ ambient at $550^{\circ}C$ and measured. The measurement of AFM shows that the average surface roughness is each $10.108{\AA}$ and $29.626{\AA}$. So, we could know every commonplace thing. The measurement of XRD shows that the films have the preferred orientation of(1 0 1). From SEM images, we could see that Boron Phosphide is showed of a structure, which is grain size, which is grain boundary size. Also, the measurement of AES is shown the films have $B_{13}P_2$ Stoichiometry. From WDX See that ingredient is detected each Boron and Phosporus. So, we could see that deposited BP thin film. In this study, we obtained the BP thin film by deposited in atmosphere pressure, and known to applicate as microwave absorbtion material of BP thin film.