• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.243-246
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• 2004

Boron Phosphide films were deposited on (111) Si substrate at $650^{\circ}C$, by the reaction of $B_2H_6$ with PH, using APCVD. $N_2$ was carried out as carrier gas. The optimal gas rates were 20 ml/min for B2H6, 60 ml/min for PH3 and 1 l/min for N2. After as grown the films were insitu annealed fur 1hour in $N_2$ ambient at $550^{\circ}C$ and measured. The measurement of AFM shows that the average surface roughness is $10.108{\AA}$ for the reaction temperature at $450^{\circ}C$ and $29.626{\AA}$ fur the reaction temperature at $650^{\circ}C$. The measurement of XRD shows that the films have the orientation of(1 0 1). Also, the measurement of AES is shown that the films have $B_{13}P_2$ stoichiometry. For the Result of microwaves absorbtion properties using VNA, it obtained the permittivity of BP about 8 between $1.5{\sim}2.5GHz$. In this study, it obtained the BP thin film by deposited in atmosphere pressure And BP thin film can be after to applicate as microwave absolution material is obtained.

• Journal of the Korean Magnetics Society
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• v.18 no.5
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• pp.195-199
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• 2008

Composites of $Fe_{93.5}Si_{6.5}$ powder and epoxy were prepared using a thermal curing process. Scanning electron microscope (SEM), vibrating sample magnetometer (VSM) and network analyzer were used to analyze the structure, electromagnetic properties and microwave absorption of the composites. Results show that the saturation magnetization depends on the fraction of the $Fe_{93.5}Si_{6.5}$ powder in the composite, which affects initial permeability. It is believed that the eddy current loss is a dominant factor over 1 GHz and that the resonance frequency of the composite decreases with increasing fractions of $Fe_{93.5}Si_{6.5}$ powder. Finally, reflection loss was calculated from the permeability and permittivity of these composites. Composite with 50 wt.% $Fe_{93.5}Si_{6.5}$ powder fractions and 5 mm thickness showed reflection loss below -20 dB from 3.66 GHz to 4.16 GHz. Therefore, it is believed that thin Fe-Si/epoxy composites may be a good candidate for microwave absorption application.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.332-335
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• 2004

Boron Phosphide films were deposited on(III) Si substrate at $650^{\circ}C$, by the reaction of $B_2H_6$ with $PH_3$ using CVD. $N_2$ was employed as carrier gas. The optimal gas rates were 20 ml/min for $B_2H_6$, 60 ml/min for $PH_3$ ml/min and $1{\ell}/min$ for $N_2$. The films were annealed for 1hour in $N_2$ ambient at $550^{\circ}C$ and measured. The measurement of AFM shows that the average surface roughness is each $10.108{\AA}$ and $29.626{\AA}$. So, we could know every commonplace thing. The measurement of XRD shows that the films have the preferred orientation of(1 0 1). From SEM images, we could see that Boron Phosphide is showed of a structure, which is grain size, which is grain boundary size. Also, the measurement of AES is shown the films have $B_{13}P_2$ Stoichiometry. From WDX See that ingredient is detected each Boron and Phosporus. So, we could see that deposited BP thin film. In this study, we obtained the BP thin film by deposited in atmosphere pressure, and known to applicate as microwave absorbtion material of BP thin film.