• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.2 s.117
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• pp.158-165
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• 2007

In this paper, the circularly polarized $4{\times}4$ array antenna is proposed for the X-band. A single antenna consists of square patch and unequal cross-aperture coupled feeding. The RHCP(Right Handed Circularly Polarization) is generated by unequal cross-aperture coupled feeding. By reducing space among elements of way antenna from 0.8 ${\lambda}_0$ to 0.45 ${\lambda}_0$, the mounting area of array antenna is miniaturized. The $2{\times}2$ array antenna is designed using sequential rotation feeding network. The good level of gain, axial ratio, and impedance bandwidth are achieved. The $4{\times}4$ array antenna is extended by ${\lambda}/4$ transformer and T-junction power divider. The simulated maximum radiation gain is 15.09 dBi at 10 GHz. The simulated 3 dB Axial Ratio bandwidth is from 9.05 to 10.4 GHz(13.5%). Also the measured impedance bandwidth($VSWR{\leq}2$) of manufactured $4{\times}4$ array antenna is from 8.45 to 11.84 GHz(33.9%). The measured maximum radiation gain is 11.10 dBi at 10 GHz. The measured 3 dB Axial Ratio bandwidth is from 9.42 to 10.47 GHz(10.5%).

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.8 no.1
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• pp.13-21
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• 1997

In this paper, the oscillator type active antenna used as an element of active phased array antenna is designed and fabricated using slot coupling. The radiating element and active circuit are fabricated on each layer respectively and coupled electromagnetically through slot on the ground plane. This structure can solve the problems such as narrow bandwidth of microstrip antenna, spurious radiation by active circuits, and spaces for integration of the feeding circuits which are caused by integrating antennas with oscillator circuits in the same layer. The active antenna in this paper, the oscillation frequency can be tuned linearly by controlling the drain bias voltage of FET. The frequency tuning range is between 12.37 GHz to 12.65 GHz when bias voltage is varied from 3V to 9V, thus frequency tuning bandwidth is 280 MHz (2.24%). The output power of antenna is uniform within 5dB over frequency tuning range. Therefore this active antenna can be used as an element of linear or planar active phased array antennas.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.4 s.95
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• pp.366-372
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• 2005

This paper presents analysis of a slot array antenna having a low side lobe level and high front-to-back ratio for a repeater system of a satellite DMB(Digital Multimedia Broadcasting) service. Antennas for this repeater system require a high gain and enough isolation to reduce interferences between signals in system. Therefore, it is necessary to suppress a side lobe level and to increase front-to-back ratio. Unlike a structure 134 by lossy microstrip lines, in this work a single cavity-backed slot antenna array using a single waveguide feed is proposed to obtain the reliability for high power handling and high radiation efficiency. The side lobe level and front-to-back ratio are enhanced with tapered array technique and an optimized vertical reflector. The measured side lobe levels in H- and E-plane are under $-33.24\;\cal{dB}$ and $-35.78\;\cal{dB}$, respectively. The front-to-back ratio over $37.84\;\cal{dB}$, and the peak gain of over $17\;\cal{dBi}$ are measured.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.12 no.11
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• pp.5214-5218
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• 2011

In this paper, bandwidth improvement of a series-fed two dipole array(STDA) antenna applicable for mobile communication base station antennas is studied. The proposed STDA antenna consists of two strip dipole antennas with different lengths which are connected directly trough a coplanar stripline(CPS). By adjusting the spacing between the two dipoles and the length of the second dipole, the bandwidth of the STDA can be enhanced. In addition, an integrated balun composed of a short-circuited microstrip line and a slot line is utilized to minimize the area required for a feeding part, and a broadband impedance matching is obtained by adjusting the feeding point. Based on the proposed antenna structure, an STDA antenna covering the frequency band ranging from 1.75 GHz to 2.7 GHz, which includes almost all the existing mobile communication frequency bands, with more than 5 dBi gain is designed and fabricated on an FR4 substrate with dielectric constant of 4.4 and thickness of 1.6mm, and experimentally tested. The fabricated antenna shows impedance bandwidth of 49%(1.7-2.8 GHz) for VSWR<2, a gain higher than 5.5 dBi, and a front-back ratio better than 12 dB.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.23 no.10
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• pp.1240-1247
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• 2019

In this paper, we designed a four-band antenna that can be applied to WLAN and WiMAX systems by designing a microstrip feeding structure, four branch lines and a slit on the ground plane. The proposed antenna is designed with a size of 16.0 mm (W1) × 48.0 mm (L8) on a dielectric substrate of 18.0 mm (W) × 50.0 mm (L) × 1.0 mm(h). and a slit of 2.9 mm (W7) × 4.0 mm (L7) is inserted into the ground plane of 18.0 mm (W) × 18.7 mm (L6). Based on -10 dB production and measurement results, it obtained 60.8 MHz (8,730~9,338 MHz), 310 MHz (2.33~2.64 GHz) in the 2.4 GHz band, 420MHz (3.39~3.81 GHz) in the 3.4 GHz band, and 2,070 MHz (4.62~6.69 GHz) in the 5.0 GHz. In addition, the gain and radiation pattern characteristics of the quadrant band are measured from the measurement results anechoic chamber.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.46 no.12
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• pp.6-13
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• 2009

For X-band phased array systems, a power amplifier, a 6-bit phase shifter, a 6-bit digital attenuator, and a SPDT transmit/receive (T/R) switch are fabricated and measured. All circuits are demonstrated by using CMOS 0.18 um technology. The power amplifier has 2-stage differential and cascade structures. It provides 1-dB gain-compressed output power ($P_{1dB}$) of 20 dBm and power-added-efficiency (PAE) of 19 % at 8-11 GHz frequencies. The 6-bit phase shifter utilizes embedded switched filter structure which consists of nMOS transistors as a switch and meandered microstrip lines for desired inductances. It has $360^{\circ}$ phase-control range and $5.6^{\circ}$ phase resolution. At 8-11 GHz frequencies, it has RMS phase and amplitude errors are below $5^{\circ}$ and 0.8 dB, and insertion loss of $-15.7\;{\pm}\;1,1\;dB$. The 6-bit digital attenuator is comprised of embedded switched Pi-and T-type attenuators resistive networks and nMOS switches and employes compensation circuits for low insertion phase variation. It has max. attenuation of 31.5 dB and 0.5 dB amplitude resolution. Its RMS amplitude and phase errors are below 0.4 dB and $2^{\circ}$ at 8-11 GHz frequencies, and insertion loss is $-10.5\;{\pm}\;0.8\;dB$. The SPDT T/R switch has series and shunt transistor pairs on transmit and receive path, and only one inductance to reduce chip area. It shows insertion loss of -1.5 dB, return loss below -15 dB, and isolation about -30 dB. The fabricated chip areas are $1.28\;mm^2$, $1.9mm^2$, $0.34\;mm^2$, $0.02mm^2$, respectively.