• Applied Chemistry for Engineering
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• 제25권2호
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• pp.181-187
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• 2014

In order to use the spherical atomizing reduction steel slag (ladle furnace slag, LFS) instead of the fine aggregate of polymer concrete composites, various specimens were prepared with various replacement ratios of atomizing reduction steel slag and the addition ratios of polymer binder. Physical properties of these specimens were investigated through the absorption test, the compressive strength test, the flexural strength test, the hot water resistance test, the pore analysis and the micro-structure using scanning electron microscope. Results showed that the compressive strength and flexural strength of specimens with 7.5% of polymer binders increased with the increase of replacement ratios of atomizing reduction steel slag, but those of the specimens with 8.0% or more of polymer binders showed a maximum strength at a certain replacement ratio due to the material segregation causing the increase of fluidity. By hot water resistance tests, the compressive strength, flexural strength, average pore diameter, and bulk density decreased but the total pore volume and pore diameter increased. It was concluded that the amount of polymer binders could be reduced by maximum 23.8%, because the workability of the polymer concrete was remarkably improved by using the atomizing reduction steel slag instead of fine aggregate. However, since the use of atomizing reduction steel slag decreased the resistance of the polymer concrete to hot water, further studies are required.

• Journal of Welding and Joining
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• 제18권2호
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• pp.213-213
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• 2000

This study was performed to investigate types and formation mechanism of cracks in two Al alloy welds, A5083 and A7NO1 spot-welded by pulse Nd: YAG laser, using SEM, EPMA and Micro-XRD. In the weld zone, three types of crack were observed: center line crack($C_{C}$), diagonal crack($C_{D}$), and U shape crack($C_{U}$). Also, HAZ crack($C_{H}$), was observed in the HAZ region, furthermore, mixing crack($C_{M}$), consisting of diagonal crack and HAZ crack was observed.White film was formed at the hot crack region in the fractured surface after it was immersed to 10%NaOH water. In the case of A5083 alloy, white films in C crack and $C_D crack region were composed of low melting phases, Fe₂Si$Al_8$ and eutectic phases, Mg₂Al₃ and Mg₂Si. Such films observed near HAZ crack were also consist of eutectic Mg₂Al₃. In the case of A7N01 alloy, eutectic phases of CuAl₂, $Mg_{32}$ (Al,Zn) ₃, MgZn₂, Al₂CuMg and Mg₂Si were observed in the whitely etched films near $C_{C}$ crack and $C_{D}$ crack regions. The formation of liquid films was due to the segregation of Mg, Si, Fe in the case of A5083 alloy and Zn, Mg, Cu, Si in the case of A7N01 aooly, respectively.The $C_{D}$ and $C_{C}$ cracks were regarded as a result of the occurrence of tensile strain during the welding process. The formation of $C_{M}$ crack is likely to be due to the presence of liquid film at the grain boundary near the fusion line in the base metal as well as in the weld fusion zone during solidification. The $C_{U}$ crack is considered a result of the collapsed keyhole through incomplete closure during rapid solidification. (Received October 7, 1999)

• Journal of the Korean Recycled Construction Resources Institute
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• 제9권2호
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• pp.152-160
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• 2021

Converter steel slag(BOF slag) is a vast amount of solid waste generated in the steelmaking process which has very low utilization rate in Korea. Due to the presence of free CaO which can derive bad volume stability in BOF slag, it usually land filled. For recycling BOF and identify its applicability as fine aggregate, this study investigates the fundamental characteristics of mortar with cement replaced ferronickel slag(FNS), which has the potential to be used as a binder. The results suggest that the mineral phases of BOF slag mainly include larnite(CaSiO₄), mayenite(Ca₁₂Al₁₄O₃₃) and wuestite(FeO) while olivine crystallines are shown in FNS. The results of flow and setting time reveals that the flowability and process of hardening increased when the amount of FNS and BOF slag incorporated was increased. The length change shows that the amount of change in the length of the mortar was almost constant regardless of mix proportion while compressive strength was reduced. Micro structure test results revealed that FNS or/and BOF slag mix took a long time to react in the cement matrix to form a complete hydration products. To achieve the efficient utilization of B OF slag as construction materials, proper replacement rate is necessary.

• Korean Journal of Breeding Science
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• 제41권4호
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• pp.412-419
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• 2009

In order to study the inheritance of watermelon seed size, we used six watermelon lines of different seed sizes as parental lines. Six lines include three accessions, 'PI525088' with giant seed (GS), 'Charleston Gray' with big seed (BS), and 'NT' with normal medium size seed (NS), and three near isogenic lines, 'NTss' with small seed (SS), 'NTms' with micro seed (MS) and 'NTts' with tomato seed size (TS) bred by crosses between accession 'NT' of normal seed size and accession 'TDR' of the smallest seed size,. We inspected $F_1$, $F_2$, $BC_1F_1$ (P1), $BC_1F_1$ (P2) populations from the crosses between the adjacent seed size materials like $GS{\times}BS$, $BS{\times}NS$, $NS{\times}SS$, and $MS{\times}TS$, and two crosses between parental lines showing relatively big difference in seed size such as $GS{\times}TS$ and $NS{\times}TS$. Partial single dominant inheritance patterns were observed between $GS{\times}BS$, $NS{\times}SS$, and $MS{\times}TS$ and inheritance patterns based on two genes or more than two genes were speculated between $BS{\times}NS$. A very wide segregation range was observed from the population of $GS{\times}TS$ indicating many quantitative genes involved in the seed sizes. Overall, we speculated that more than six genes are involved in between the biggest and smallest seed size watermelon and three major genes between the normal seed size and the smallest seed size watermelon.

• Proceedings of the Korean Vacuum Society Conference
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.154-155
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• 2012

The promise of nano-crystalites (nc) as a technological material, for applications including display backplane, and solar cells, may ultimately depend on tailoring their behavior through doping and crystallinity. Impurities can strongly modify electronic and optical properties of bulk and nc semiconductors. Highly doped dopant also effect structural properties (both grain size, crystal fraction) of nc-Si thin film. As discussed in several literatures, P atoms or radicals have the tendency to reside on the surface of nc. The P-radical segregation on the nano-grain surfaces that called self-purification may reduce the possibility of new nucleation because of the five-coordination of P. In addition, the P doping levels of ${\sim}2{\times}10^{21}\;at/cm^3$ is the solubility limitation of P in Si; the solubility of nc thin film should be smaller. Therefore, the non-activated P tends to segregate on the grain boundaries and the surface of nc. These mechanisms could prevent new nucleation on the existing grain surface. Therefore, most researches shown that highly doped nc-thin film by using conventional PECVD deposition system tended to have low crystallinity, where the formation energy of nucleation should be higher than the nc surface in the intrinsic materials. If the deposition technology that can make highly doped and simultaneously highly crystallized nc at low temperature, it can lead processes of next generation flexible devices. Recently, we are developing a novel CVD technology with a neutral particle beam (NPB) source, named as neutral beam assisted CVD (NBaCVD), which controls the energy of incident neutral particles in the range of 1~300eV in order to enhance the atomic activation and crystalline of thin films at low temperatures. During the formation of the nc-/pm-Si thin films by the NBaCVD with various process conditions, NPB energy directly controlled by the reflector bias and effectively increased crystal fraction (~80%) by uniformly distributed nc grains with 3~10 nm size. In the case of phosphorous doped Si thin films, the doping efficiency also increased as increasing the reflector bias (i.e. increasing NPB energy). At 330V of reflector bias, activation energy of the doped nc-Si thin film reduced as low as 0.001 eV. This means dopants are fully occupied as substitutional site, even though the Si thin film has nano-sized grain structure. And activated dopant concentration is recorded as high as up to 1020 #/$cm^3$ at very low process temperature (＜ $80^{\circ}C$) process without any post annealing. Theoretical solubility for the higher dopant concentration in Si thin film for order of 1020 #/$cm^3$ can be done only high temperature process or post annealing over $650^{\circ}C$. In general, as decreasing the grain size, the dopant binding energy increases as ratio of 1 of diameter of grain and the dopant hardly be activated. The highly doped nc-Si thin film by low-temperature NBaCVD process had smaller average grain size under 10 nm (measured by GIWAXS, GISAXS and TEM analysis), but achieved very higher activation of phosphorous dopant; NB energy sufficiently transports its energy to doping and crystallization even though without supplying additional thermal energy. TEM image shows that incubation layer does not formed between nc-Si film and SiO2 under later and highly crystallized nc-Si film is constructed with uniformly distributed nano-grains in polymorphous tissues. The nucleation should be start at the first layer on the SiO2 later, but it hardly growth to be cone-shaped micro-size grains. The nc-grain evenly embedded pm-Si thin film can be formatted by competition of the nucleation and the crystal growing, which depend on the NPB energies. In the evaluation of the light soaking degradation of photoconductivity, while conventional intrinsic and n-type doped a-Si thin films appeared typical degradation of photoconductivity, all of the nc-Si thin films processed by the NBaCVD show only a few % of degradation of it. From FTIR and RAMAN spectra, the energetic hydrogen NB atoms passivate nano-grain boundaries during the NBaCVD process because of the high diffusivity and chemical potential of hydrogen atoms.