• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.406-409
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• 2001

The conductivity properties and synthesis of LaNiO$_3$ ceramics from La$\sub$1+$\delta$/NiO$_3$($\delta$=--0.06, 0, 0.06) were investigated. A single perovskite phase was realized at 800$^{\circ}C$. La$_2$NiO$_4$ and other unexpected oxide were observed at 1000$^{\circ}C$. The Microstructure was showed clearly that it is a low density porous material. LaNiO$_3$ ceramic showed a metallic conductivity. The conductivity of La rich samples had a higher value than the La poor samples.

• Electrical & Electronic Materials
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• v.10 no.5
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• pp.447-452
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• 1997

Effects of metal impurities in insulation of distribution cables on electrical conduction of distribution cables was investigated. Samples of Al, Cu, Fe are fabricated as metallic impurities, and measured electrical conductivity in the voltage range of 0~10 KV. Temperature dependent effect of hysteresis curves and the relationship between forward and reverse current due to impurity content are discussed.

• Electrical & Electronic Materials
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• v.10 no.7
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• pp.713-718
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• 1997

Polyaniline free standing films cast from N-methyl-2-pyrrolidinone(NMP) solution, camphorsulfonic acid(HCSA), dodecylbenzensulfonic acid(HDBSA), inorganic matter(carbon black, graphite) and metal(silver) were prepared by processings. The properties of these films such as crystallinity, near-infrared absorption spectra and conductivity were investigated. The HCSA and HDBSA doped polyaniline films cast from m-cresol and chloroform solvents showed the metallic property and high crystallinity, respectively. The value of conductivity in the HCSA doped polyaniline film obtained 180 S/cm. We have obtained the value of conductivity 200 S/cm in the metal(silver) doped polyaniline film, which is higher than that of the HCSA doped polyaniline film. The metal(silver) doped polyaniline film shows good properties as a electromagnetic shielding material.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1258-1260
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• 1997

The metallic interconnector has a superior property than the ceramic interconnector in the point of the cell performance, but has problems to form oxide films on the interconnector surface during cell operation and induce cracking in the cell due to the stress by the thermal expansion coefficient difference with stabilized Zr electrolyte. For solving the problems in the metallic interconnector, new and modified materials have been investigated. In this paper, $LaCrO_3$ dispersed Cr was evaluated in high temperature oxidized characteristics, sintering density, electrical conductivity and various thermochemical properties. The test results show that $LaCrO_3$ dispersed Cr has more superior properties than that of conventional alloy interconnector and $LaCrO_3$ dispersed Cr can be used as an interconnector in SOFC.

• Journal of Korean Vacuum Science & Technology
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• v.6 no.2
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• pp.76-78
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• 2002

We have carried out the first-principle electronic structure calculations to investigate the spacer layer formation of Fe/Si multilayered films (MLF) and compared with the results obtained by optical spectroscopy. The computer-simulated spectra based on various structural models of MLF showed that neither FeSi$_2$ nor B2O-phase FeSi, which are semiconducting, could be considered as the spacer layers in the Fe/Si MLF for the strong antiferromagnetic coupling. The optical properties of the spacer extracted from the effective optical response of the MLF strongly support its metallic nature. The optical conductivity spectra of various phases of Fe-Si compounds were calculated and compared with the extracted optical properties of the spacer. From the above theoretical investigations it is concluded that a E2-phase metallic FeSi compound is spontaneously formed at the interfaces during deposition.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.14 no.4
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• pp.1883-1889
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• 2013

Although Fe-Si based alloy has lower figure of merit than Si-Ge alloy applied for space probe, its low cost related to abundant raw material, rather simple processing, high temperature resistance and reliability up to $800^{\circ}C$ made it one of the most promising middle temperature thermoelectric generation materials. The effect of particle size and additive on the thermoelectric properties of p-$FeSi_2$ prepared by a RF inductive furnace was investigated. The electrical conductivity increased slightly with decreasing particle size and hence better grain-to-grain connectivity due to the increase of density. The Seebeck coefficient exhibited the maximum value at about 600~800K and decreased slightly with increasing particle size. This must be due to the amount of residual metallic phase ${\varepsilon}$-FeSi. $Fe_2O_3$ and/or $Fe_3O_4$-doped specimens showed the higher electrical conductivity and the lower Seebeck coefficient due to increase of the metallic phase and Si-vacancy. On the other hand, $SiO_2$-doped specimen showed the higher electrical conductivity and the higher Seebeck coefficients.

• Proceedings of the Korean Nuclear Society Conference
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• 1998.10a
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• pp.250-250
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• 1998

• 한국신재생에너지학회:학술대회논문집
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• 2010.11a
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• pp.90.2-90.2
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• 2010

The coated metallic bipolar plates are getting attractive due to their good feasibility of mass production, low contact resistance, high electrical/thermal conductivity, low gas permeability and good mechanical strength comparing with graphite materials. Yet, metallic bipolar plates for polymer electrolyte membrane(PEM) fuel cells typically require coatings for corrosion protection. Other requirements for the corrosion protective coatings include low electrical contact resistance between metallic bipolar plate and gas diffusion layer, good mechanical robustness, low mechanical and fabrication cost. The authors have evaluated a number of protective coatings deposited on stainless steel substrate by electroplating. The coated metallic bipolar plates are investigated with an electrochemical polarization tests, salt dipping tests, adhesion tests for corrosion resistance and then the contact resistance was measured. The results showed that the selective samples electroplated with optimized method, satisfied the DOE target for corrosion resistance and contact resistance, and also were very stabilized in the typical fuel cell environments in the long-term.

• Journal of the Korean Ceramic Society
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• v.52 no.5
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• pp.344-349
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• 2015

An interconnect is the key component of solid oxide fuel cells that electrically connects unit cells and separates fuel from oxidant in the adjoining cells. To improve their surface stability in high-temperature oxidizing environments, metallic interconnects are usually coated with conductive oxides. In this study, lanthanum nickelates ($LaNiO_3$) with a perovskite structure are synthesized and applied as protective coatings on a metallic interconnect (Crofer 22 APU). The partial substitution of Co, Cu, and Fe for Ni improves electrical conductivity as well as thermal expansion match with the Crofer interconnect. The protective perovskite layers are fabricated on the interconnects by a slurry coating process combined with optimized heat-treatment. The perovskite-coated interconnects show area-specific resistances as low as $16.5-37.5m{\Omega}{\cdot}cm^2$ at $800^{\circ}C$.

• Journal of Magnetics
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• v.10 no.3
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• pp.128-132
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• 2005

We report optical ab-plane properties of the layered sodium cobaltate, $Na_xCoO_2$ for x = 0.35 and 0.75. Two samples show metallic behaviors according to dc resistivity transport. Overall temperature dependent optical conductivities of both samples are very similar to those of the high temperature superconducting underdoped cuprates. We found that the optical scattering rate of x = 0.75 sample, which is in a Curie-Weiss metallic phase, varies linearly (non-Fermi liquid) with frequency and temperature while that of x = 0.35 sample, which is in a paramagnetic metallic phase, varies quadratically (Fermi liquid) with frequency and temperature. Both x = 0.35 and 0.75 samples have an onset of scattering around $600\;cm^{-1}$ which can be attributed to the interaction of charge carriers with a bosonic collective mode in a system.