• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.96-97
• /
• 2012

In nitride and oxide film deposition, sputtered metals react with nitrogen or oxygen gas in a vacuum chamber to form metal nitride or oxide films on a substrate. The physical properties of sputtered films (metals, oxides, and nitrides) are strongly influenced by magnetron plasma density during the deposition process. Typical target power densities on the magnetron during the deposition process are ~ (5-30) W/cm2, which gives a relatively low plasma density. The main challenge in reactive sputtering is the ability to generate a stable, arc free discharge at high plasma densities. Arcs occur due to formation of an insulating layer on the target surface caused by the re-deposition effect. One current method of generating an arc free discharge is to use the commercially available Pinnacle Plus+ Pulsed DC plasma generator manufactured by Advanced Energy Inc. This plasma generator uses a positive voltage pulse between negative pulses to attract electrons and discharge the target surface, thus preventing arc formation. However, this method can only generate low density plasma and therefore cannot allow full control of film properties. Also, after long runs ~ (1-3) hours, depends on duty cycle the stability of the reactive process is reduced due to increased probability of arc formation. Between 1995 and 1999, a new way of magnetron sputtering called HIPIMS (highly ionized pulse impulse magnetron sputtering) was developed. The main idea of this approach is to apply short ${\sim}(50-100){\mu}s$ high power pulses with a target power densities during the pulse between ~ (1-3) kW/cm2. These high power pulses generate high-density magnetron plasma that can significantly improve and control film properties. From the beginning, HIPIMS method has been applied to reactive sputtering processes for deposition of conductive and nonconductive films. However, commercially available HIPIMS plasma generators have not been able to create a stable, arc-free discharge in most reactive magnetron sputtering processes. HIPIMS plasma generators have been successfully used in reactive sputtering of nitrides for hard coating applications and for Al2O3 films. But until now there has been no HIPIMS data presented on reactive sputtering in cluster tools for semiconductors and MEMs applications. In this presentation, a new method of generating an arc free discharge for reactive HIPIMS using the new Cyprium plasma generator from Zpulser LLC will be introduced. Data (or evidence) will be presented showing that arc formation in reactive HIPIMS can be controlled without applying a positive voltage pulse between high power pulses. Arc-free reactive HIPIMS processes for sputtering AlN, TiO2, TiN and Si3N4 on the Applied Materials ENDURA 200 mm cluster tool will be presented. A direct comparison of the properties of films sputtered with the Advanced Energy Pinnacle Plus + plasma generator and the Zpulser Cyprium plasma generator will be presented.

• Membrane Journal
• /
• v.30 no.3
• /
• pp.158-172
• /
• 2020

In the aspect of saving energy and water, facilitating the separation membrane for the water treatment has been rising recently as one of the possible solutions. However, microbial biofouling effect is the biggest obstacle that hinders reaching higher permeability over a prolonged period of nanofiltration operation. To solve this problem and fully utilize the filtration membranes with enhanced performance, largely two kinds of solutions are studied and the first and the most commonly mentioned type is the one using the silver nanoparticles. Since silver nanoparticles are important to be well tailored on membrane surface, various methods have been applied and suggested. Using silver nanoparticles however also has the drawbacks or possible toxicity risks, raising the need for other types of utilizing non silver particles to functionalize the membrane, such as copper, graphene or zinc oxides, and amine moieties. Each attempt included in either kind has produced some notable results in killing, preventing, or repelling the bacteria while at the same time, left some unsolved points to be evaluated. In this review, the effects of metal nanoparticles and other materials on the antifouling properties of water treatment membranes are summarized.

• Journal of Powder Materials
• /
• v.24 no.2
• /
• pp.133-140
• /
• 2017

This study investigates the oxidation properties of Fe-14Cr ferritic oxide-dispersion-strengthened (ODS) steel at various high temperatures (900, 1000, and $1100^{\circ}C$ for 24 h). The initial microstructure shows that no clear structural change occurs even under high-temperature heat treatment, and the average measured grain size is 0.4 and $1.1{\mu}m$ for the as-fabricated and heat-treated specimens, respectively. Y-Ti-O nanoclusters 10-50 nm in size are observed. High-temperature oxidation results show that the weight increases by 0.27 and $0.29mg/cm^2$ for the as-fabricated and heat-treated ($900^{\circ}C$) specimens, and by 0.47 and $0.50mg/cm^2$ for the as-fabricated and heat-treated ($1000^{\circ}C$) specimens, respectively. Further, after 24 h oxidation tests, the weight increases by 56.50 and $100.60mg/cm^2$ for the as-fabricated and heat-treated ($1100^{\circ}C$) specimens, respectively; the latter increase is approximately 100 times higher than that at $1000^{\circ}C$. Observation of the surface after the oxidation test shows that $Cr_2O_3$ is the main oxide on a specimen tested at $1000^{\circ}C$, whereas $Fe_2O_3$ and $Fe_3O_4$ phases also form on a specimen tested at $1100^{\circ}C$, where the weight increases rapidly. The high-temperature oxidation behavior of Fe-14Cr ODS steel is confirmed to be dominated by changes in the $Cr_2O_3$ layer and generation of Fe-based oxides through evaporation.

• Journal of the Korean Chemical Society
• /
• v.35 no.3
• /
• pp.226-232
• /
• 1991

Adsorption and oxidation of polychlorinated phenols by suspended ${\sigma}-MnO_2$ in aqueous solution have been studied. Of the proposed mechanism, adsorption reaction of chlorophenols onto ${\sigma}-MnO_2$(s) depended upon the pH of the solution and the concentration of chlorophenol. Adsorption isotherms showed a reasonably good fit to the Langmuir isotherm. From the pH dependence of adsorption partition coefficient and the linear relationship between octanol-water partition coefficient and adsorption partiton coefficient of chlorophenol, it is estimated that adsorption is dominated by its hydrophobicity. The rate of electron transfer reaction evaluated from the rate of reductive dissolution of ${\sigma}-MnO_2$(s) depended linearly upon the concentration of chlorophenol and the pH of medium. Observed rate constants ($K_0$) of the meta-substituted chlorophenol were lower than that of the ortho-or para-chlorophenol because of resonance effect of chlorophenoxy radical. It is indicated that this radical is produced in the adsorption process and the electron transfer reaction is rate determining.

• Bulletin of the Korean Chemical Society
• /
• v.28 no.4
• /
• pp.581-588
• /
• 2007

To enhance the photodecomposition of concentrated ammonia into N2, Pt/V-TiO2 photocatalysts were prepared using solvothermal and impregnation methods. Nanometer-sized particles of 0.1, 0.5 and 1.0 mol% V-TiO2 were prepared solvothermally, and then impregnated with 1.0 wt% Pt. The X-ray diffraction (XRD) peaks assigned to V2O5 at 30.20 (010) and Pt metal at 39.80 (111) and 46.20 (200) were seen in the 1.0 wt% Pt/ 10.0 mol% V-TiO2. The particle size increased in the order: pure TiO2, V-TiO2 and Pt/V-TiO2 after thermal treatment at 500 °C, while their surface areas were in the reverse order. On X-ray photoelectron spectroscopy (XPS), the bands assigned to the Ti2p3/2 and Ti2p1/2 of Ti4+-O were seen in all the photocatalysts, and the binding energies increased in the order: TiO2 < Pt/V-TiO2 < V-TiO2. The XPS bands assigned to the V2p3/2 (517.85, 519.35, and 520.55 eV) and V2p1/2 (524.90 eV) in the V3+, V4+ and V5+ oxides appeared over V-TiO2, respectively, while the band shifted to a lower binding energy with Pt impregnation. The Pt components of Pt/ V-TiO2 were identified at 71.60, 73.80, 75.00 and 76.90 eV, which were assigned to metallic Pt 4f7/2, PtO 4f7/2, PtO2 4f7/2, and PtO 4f5/2, respectively. The UV-visible absorption band shifted closer towards the visible region of the spectrum in V-TiO2 than in pure TiO2 and; surprisingly, the Pt/V-TiO2 absorbed at all wavelengths from 200 to 800 nm. The addition of vanadium generated a new acid site in the framework of TiO2, and the medium acidic site increased with Pt impregnation. The NH3 decomposition increased with the amount of vanadium compared to pure TiO2, and was enhanced with Pt impregnation. NH3 decomposition of 100% was attained over 1.0 wt% Pt/1.0 mol% V-TiO2 after 80 min under illumination with 365 nm light, although about 10% of the ammonia was converted into undesirable NO2 and NO. Various intermediates, such as NO2, -NH2, -NH and NO, were also identified in the Fourier transform infrared (FT-IR) spectra. From the gas chromatography (GC), FT-IR and GC/mass spectroscopy (GC/MS) analyses, partially oxidized NO and NO2 were found to predominate over V-TiO2 and pure TiO2, respectively, while both molecules were reduced over Pt/V-TiO2.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.183-184
• /
• 2013

Two main MBE growth techniques have been used: plasma-assisted MBE (PA-MBE), which utilizes a rf plasma to supply active nitrogen, and ammonia MBE, in which nitrogen is supplied by pyrolysis of NH3 on the sample surface during growth. PA-MBE is typically performed under metal-rich growth conditions, which results in the formation of gallium droplets on the sample surface and a narrow range of conditions for optimal growth. In contrast, high-quality GaN films can be grown by ammonia MBE under an excess nitrogen flux, which in principle should result in improved device uniformity due to the elimination of droplets and wider range of stable growth conditions. A drawback of ammonia MBE, on the other hand, is a serious memory effect of NH3 condensed on the cryo-panels and the vicinity of heaters, which ruins the control of critical growth stages, i.e. the native oxide desorption and the surface reconstruction, and the accurate control of V/III ratio, especially in the initial stage of seed layer growth. In this paper, we demonstrate that the reliable and reproducible growth of GaN on Si (110) substrates is successfully achieved by combining two MBE growth technologies using rf plasma and ammonia and setting a proper growth protocol. Samples were grown in a MBE system equipped with both a nitrogen rf plasma source (SVT) and an ammonia source. The ammonia gas purity was ＞99.9999% and further purified by using a getter filter. The custom-made injector designed to focus the ammonia flux onto the substrate was used for the gas delivery, while aluminum and gallium were provided via conventional effusion cells. The growth sequence to minimize the residual ammonia and subsequent memory effects is the following: (1) Native oxides are desorbed at $750^{\circ}C$ (Fig. (a) for [$1^-10$] and [001] azimuth) (2) 40 nm thick AlN is first grown using nitrogen rf plasma source at $900^{\circ}C$ nder the optimized condition to maintain the layer by layer growth of AlN buffer layer and slightly Al-rich condition. (Fig. (b)) (3) After switching to ammonia source, GaN growth is initiated with different V/III ratio and temperature conditions. A streaky RHEED pattern with an appearance of a weak ($2{\times}2$) reconstruction characteristic of Ga-polarity is observed all along the growth of subsequent GaN layer under optimized conditions. (Fig. (c)) The structural properties as well as dislocation densities as a function of growth conditions have been investigated using symmetrical and asymmetrical x-ray rocking curves. The electrical characteristics as a function of buffer and GaN layer growth conditions as well as the growth sequence will be also discussed. Figure: (a) RHEED pattern after oxide desorption (b) after 40 nm thick AlN growth using nitrogen rf plasma source and (c) after 600 nm thick GaN growth using ammonia source for (upper) [110] and (lower) [001] azimuth.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.06a
• /
• pp.477-477
• /
• 2008

For more than three decades, the gate dielectrics in CMOS devices are $SiO_2$ because of its blocking properties of current in insulated gate FET channels. As the dimensions of feature size have been scaled down (width and the thickness is reduced down to 50 urn and 2 urn or less), gate leakage current is increased and reliability of $SiO_2$ is reduced. Many metal oxides such as $TiO_2$, $Ta_2O_4$, $SrTiO_3$, $Al_2O_3$, $HfO_2$ and $ZrO_2$ have been challenged for memory devices. These materials posses relatively high dielectric constant, but $HfO_2$ and $Al_2O_3$ did not provide sufficient advantages over $SiO_2$ or $Si_3N_4$ because of reaction with Si substrate. Recently, $HfO_2$ have been attracted attention because Hf forms the most stable oxide with the highest heat of formation. In addition, Hf can reduce the native oxide layer by creating $HfO_2$. However, new gate oxide candidates must satisfy a standard CMOS process. In order to fabricate high density memories with small feature size, the plasma etch process should be developed by well understanding and optimizing plasma behaviors. Therefore, it is necessary that the etch behavior of $HfO_2$ and plasma parameters are systematically investigated as functions of process parameters including gas mixing ratio, rf power, pressure and temperature to determine the mechanism of plasma induced damage. However, there is few studies on the the etch mechanism and the surface reactions in $BCl_3$ based plasma to etch $HfO_2$ thin films. In this work, the samples of $HfO_2$ were prepared on Si wafer with using atomic layer deposition. In our previous work, the maximum etch rate of $BCl_3$/Ar were obtained 20% $BCl_3$/ 80% Ar. Over 20% $BCl_3$ addition, the etch rate of $HfO_2$ decreased. The etching rate of $HfO_2$ and selectivity of $HfO_2$ to Si were investigated with using in inductively coupled plasma etching system (ICP) and $BCl_3/Cl_2$/Ar plasma. The change of volume densities of radical and atoms were monitored with using optical emission spectroscopy analysis (OES). The variations of components of etched surfaces for $HfO_2$ was investigated with using x-ray photo electron spectroscopy (XPS). In order to investigate the accumulation of etch by products during etch process, the exposed surface of $HfO_2$ in $BCl_3/Cl_2$/Ar plasma was compared with surface of as-doped $HfO_2$ and all the surfaces of samples were examined with field emission scanning electron microscopy and atomic force microscope (AFM).

• Korean Chemical Engineering Research
• /
• v.50 no.3
• /
• pp.398-402
• /
• 2012

The catalytic performance of some metal oxides in the vapor phase selective oxidation of $H_2S$ in the stream containing ammonia and water was investigated. Among the catalysts tested $Fe_2O_3/SiO_2$ was the most promising catalyst for practical application. It showed higher than 90% $H_2S$ conversion and very small amount of $SO_2$ emission over a temperature range of $240{\sim}280^{\circ}C$. The effects of reaction temperature, $O_2/H_2S$ ratio, amount of ammonia and water vapor on the catalytic activity of $Fe_2O_3/SiO_2$ were discussed to better understand the reaction mechanism. The $H_2S$ conversion showed a maximum at $260^{\circ}C$ and it decreased with increasing temperature over $280^{\circ}C$. With an increase of $O_2/H_2S$ ratio from 0.5 to 4, the conversion was slightly increased, but the selectivity to elemental sulfur was remarkably decreased. The increase of ammonia amount favored the conversion and the selectivity to elemental sulfur with a decrease in $SO_2$ production. The presence of water vapor decreased both the activity and the selectivity to sulfur, but increased the ATS selectivity.

• Journal of IKEEE
• /
• v.20 no.3
• /
• pp.220-225
• /
• 2016

In this paer, low on-resistance and high-power trench gate MOSFET (Metal-Oxide-Silicon Field Effect Transistor) incorporating current sensing FET (Field Effect Transistor) is proposed and evaluated. The trench gate power MOSFET was fabricated with $0.6{\mu}m$ trench width and $3.0{\mu}m$ cell pitch. Compared with the main switching MOSFET, the on-chip current sensing FET has the same device structure and geometry. In order to improve cell density and device reliability, self-aligned trench etching and hydrogen annealing techniques were performed. Moreover, maintaining low threshold voltage and simultaneously improving gate oxide relialility, the stacked gate oxide structure combining thermal and CVD (chemical vapor deposition) oxides was adopted. The on-resistance and breakdown voltage of the high density trench gate device were evaluated $24m{\Omega}$ and 100 V, respectively. The measured current sensing ratio and it's variation depending on the gate voltage were approximately 70:1 and less than 5.6 %.

• Journal of the Korean Chemical Society
• /
• v.55 no.4
• /
• pp.612-619
• /
• 2011

Lanthanide(III) complexes of 1,2-diphenyl-4-butyl-3,5-pyrazolidinedione(phenylbutazone, PB) have been synthesized and characterized by elemental analyses, molar conductance measurements, IR, UV-Vis. and NMR spectra. The spectral data reveal that the PB acts as a bidentate and mono-ionic ligand coordinating through both the carbonyl oxygens of the pyrazolidinedione ring. The molar conductance data suggest that the complexes are non-electrolytes. The thermal behaviour of the complexes was studied by TG and DTG in air atmosphere and the results provide information about dehydration, thermal stability and thermal decomposition. The final products are found to be the corresponding metal oxides. The thermodynamic parameters and kinetic parameters were evaluated for the dehydration and decomposition stages. The negative entropy values of the decomposition stages indicate that the activated complexes have a more ordered structure than the reactants and that the reactions are slower than normal. Based on these studies, the complexes have been formulated as $[Ln(PB)_3]{\cdot}5H_2O$(Ln=La and Ce) and $[Ln(PB)_3(H_2O)_2]{\cdot}2H_2O$(Ln=Pr, Nd and Sm).