• 한국응용과학기술학회지
• /
• 제19권4호
• /
• pp.297-301
• /
• 2002

We investigated the effect of electron injection layer on the performance of organic light emitting devices (OLEDs). As an electron injection layer, the quinolate metal complexes were used. We optimized the device efficiency by varying the thickness of the quinolate metal complexes layer. The device with 1 nm of the quinolate metal complexes layer showed significant enhancement of the device performance and device lifetime. We also compared the effect of 8-hydroxyquinolinolatolithium (Liq) with that of bis(8-quinolinolato)-zinc ($Znq_{2}$) and 8-hydroxyquinolinolatosodium (Naq) as an electron injection layer. As a result, Liq is considered as a better materials for the electron injection layer than $Znq_{2}$ and Naq.

• Applied Science and Convergence Technology
• /
• 제26권1호
• /
• pp.16-19
• /
• 2017

A thin metal layer of molybdenum is placed between the conventional barrier layer and the stainless steel substrate for investigating the diffusion property of iron (Fe) atoms. In this study, the protection probability was confirmed by measuring the concentration of out-diffused Fe using a SIMS depth profile. The Fe concentration of chromium (Cr) barrier layer with 10 nm molybdenum (Mo) layer is 5 times lower than that of Cr barrier without the thin Mo layer. The insertion of a thin Mo metal layer between the barrier layer and the stainless steel substrate effectively protects the out-diffusion of Fe atoms.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2007년도 추계학술대회 논문집
• /
• pp.9-10
• /
• 2007

In this paper, Thin films of $HfO_2$/Hf were deposited on p-type wafer by Atomic Layer Deposition(ALD). And we studied the electrical characterization of $HfO_2$/Hf/Si MOS capacitor depending on thickness of Hf metal layer. $HfO_2$ films were deposited using TEMAH and $O_3\;at\;350^{\circ}C$. Samples were then annealed using furnace heating to $500^{\circ}C$. The MOS capacitor of round-type was fabricated on Si substrates. Through TEM(Transmission Electron Microscope), XRD(X-ray Diffraction), capacitance-voltage(C-V) and current-voltage(I-V) analysis, the role of thin Hf metal layer for the better $HfO_2$/Si interface property was investigated.

• 한국분말재료학회지
• /
• 제4권3호
• /
• pp.196-204
• /
• 1997

Joining of AIN ceramics to W and Cu by active-metal brazing method was tried with use of (Ag-Cu)-Ti alloy as insert-metal. Joints were produced under various conditions of temperature, holding time and Ti-content in (Ag-Cu) alloy Reaction and microstructural development in bonded interface were investigated through observation and analysis by SEM/EDS, EPMA and XRD. Joint strengths were measured by shear test. Bonded interface consists of two layers: an insert-metal layer of eutectic Ag- and Cu-rich phases and a reaction layer of TiN. Thickness of reaction layer increases with bonding temperature, holding time and Ti-content of insert-metal. It was confirmed that the growth of reaction layer is a diffusion-controlled process. Activation energy for this process was 260 KJ/mol which is lower than that for N diffusion in TiN. Maximum shear strength of 108 MPa and 72 MPa were obtained for AIN/W and AIN/Cu joints, respectively. Relationship between processing variables, joint strength and thickness of reaction layer was also explained.

• ETRI Journal
• /
• 제44권1호
• /
• pp.147-154
• /
• 2022

We demonstrate a new double-layer structure for stretchable interconnects, where the top surface of a serpentine polyimide support is coated with a thin eutectic gallium-indium liquid metal layer. Because the liquid metal layer is constantly fixed on the solid serpentine body in this liquid-on-solid structure, the overall stretching is accomplished by widening the solid frame itself, with little variation in the total length and cross-sectional area of the current path. Therefore, we can achieve both invariant resistance and infinite fatigue life by combining the stretchable configuration of the underlying body with the freely deformable nature of the top liquid conductor. Further, we fabricated various types of double-layer interconnects as narrow as 10 ㎛ using the roll-painting and lift-off patterning technique based on conventional photolithography and quantitatively validated their beneficial properties. The new interconnecting structure is expected to be widely used in applications requiring high-performance and high-density stretchable circuits owing to its superior reliability and capability to be monolithically integrated with thin-film devices.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
• /
• pp.270-271
• /
• 2008

The contact resistance between organic semiconductor and source-drain electrode in Bottom Contact Organic Thin-Film Transistors (BCOTFTs) can be effectively reduced by metal oxide/molybdenum double layer structure; metal oxide layers including nickel oxide (NiOx/Mo) and moly oxide(MoOx) under molybdenum work as a high performance carrier injection layer. Step profiles of source-drain electrode can be easily achieved by simultaneous etching of the double layers using the difference etching rate between metal oxides and metal layers.

• 대한치과기공학회지
• /
• 제31권4호
• /
• pp.15-23
• /
• 2009

The aim of this study was to evaluate the bond strength of using a Au bonding agent applied on cp-Ti and nonprecious metal-gold-ceramic system. Metallic frameworks(diameter: 5mm, height: 20mm)(N=56, n=7per group) cast in Ni-Cr alloy, Co-Cr alloy and cp-Ti were obtained using acrylic templates and airborne particle abraded with $110{\mu}m$ aluminum oxide. Au bonding agent was applied on wash opaque firing as intermediate layer. SEM and SEM/EDS line profile were performed on the cutting the cross-section of the metal substrate-porcelain with intermediate Au coating. Groups were tested using shear bond strength(SBS) testing at 0.5mm/min. The mean SBS values for the ceramic-Au layer-metal combination were significantly higher than those ceramic-metal combination. While ceramic-Au layer-cp-Ti combinations failed to increase bond strength instead of using a titanium bonding porcelain. The appication of using Au intermediate layer significantly improve the bond strength combination with metal-ceramic system.

• 멤브레인
• /
• 제33권1호
• /
• pp.13-22
• /
• 2023

리튬 금속 기반 전극의 높은 용량에도 불구하고, 제어가 어려운 덴드라이트 성장은 낮은 쿨롱 효율, 안전 문제를 야기해, 리튬금속 배터리의 상용화를 제한한다. 본 연구에서는 압전 복합체인 BaTiO₃/PVDF (BTO@PVDF) 기반 보호층을 리튬금속에 코팅, 덴드라이트에 의한 부피팽창으로 발생한 변형을 분극을 이용하여, 리튬 금속 전극의 안정성 및 성능을 향상하고자 한다. 이를 통해, 균일한 리튬이온의 증착이 가능해졌으며, BTO@PVDF 전극은 100 사이클 동안 약 98.1% 이상의 쿨롱 효율을 나타내었다. 또한, CV를 통해 향상된 리튬이온의 확산계수(D_Li+) 증가를 보였으며, 본 연구에서 제시된 전략은 리튬 금속 전극의 성능 향상에 새로운 길을 나타내준다.

• 대한치과기공학회지
• /
• 제31권3호
• /
• pp.15-20
• /
• 2009

The success of the porcelain fused to gold alloy restoration depends not only on the choice of materials but to a larger degree on the technical skills. The porcelain fused to metal(PFM) alloys containing gold are commonly use for dental purposes in dental laboratory. The gold-colored alloys contain primarily gold, platinum, palladium, and silver, with minimum amounts of such metals as tin, iridium, or titanium. The purpose of this study is on the metal-porcelain fusing layer in porcelain fused to high gold alloy Principal results are as follows. The hardness number(Hv) of PFG is respectively $140.2{\pm}12.6$ in as-casted, $164.3{\pm}14.3$ in heat-treated, $186.6{\pm}20.4$ in fired-treated. The formation of the fusing(intermediate) layer caused by components fusing the interface of porcelain and gold alloy. The main components of the fusing(intermediate) layer are Na, Al, Si, K, Zn, Zr and Ce. The intermediate layer formed by the 2nd firing is more larger than the intermediate layer formed by the 1st firing.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2002년도 하계학술대회 논문집
• /
• pp.326-329
• /
• 2002

In this paper, we investigated a feasibility of cerium oxide(CeO$_2$) films as a buffer layer of MFIS(metal ferroelectric insulator semiconductor) type capacitor. CeO$_2$ layer were Prepared by two step process of a low temperature film growth and subsequent RTA (rapid thermal annealing) treatment. By app1ying an ultra thin Ce metal seed layer and N$_2$ Plasma treatment, dielectric and interface properties were improved. It means that unwanted SiO$_2$ layer generation was successfully suppressed at the interface between He buffer layer and Si substrate. The lowest lattice mismatch of CeO$_2$ film was as low as 1.76% and average surface roughness was less than 0.7 m. The Al/CeO$_2$/Si structure shows breakdown electric field of 1.2 MV/cm, dielectric constant of more than 15.1 and interface state densities as low as 1.84${\times}$10$\^$11/ cm$\^$-1/eV$\^$-1/. After N$_2$ plasma treatment, the leakage current was reduced with about 2-order.