• Proceedings of the Materials Research Society of Korea Conference
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• 2009.11a
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• pp.24.1-24.1
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• 2009

Tantalum carbo-nitride($T_aC_xN_y$) films were deposited with chemical vapor deposition(CVD) using tert-butylimido tris-diethylamido tantalum (TBTDET, $^tBu-N=Ta-(NEt_2)_3$, $Et=C_2H_5$, $^tBu=C(CH_3)_3$) between $350^{\circ}C$ and $600^{\circ}C$ with argon as a carrier gas. Fourier transform infrared (FT-IR)spectroscopy was used to study the thermal decomposition behavior of TBTDET in the gas phase. When the temperature was increased, C-H and C-N bonding of TBTDET disappeared and the peaks of ethylene appeared above $450^{\circ}C$ in the gas phase. The growth rate and film density of $T_aC_xN_y$ film were in the range of 0.1nm/min to 1.30nm/min and of $8.92g/cm^3$ to $10.6g/cm^3$ depending on the deposition temperature. $T_aC_xN_y$ films deposited below $400^{\circ}C$ were amorphous and became polycrystal line above $500^{\circ}C$. It was confirmed that the $T_aC_xN_y$ film was a mixture of TaC, graphite, $Ta_3N_5$, TaN, and $Ta_2O_5$ phases and the oxide phase was formed from the post deposition oxygen uptake. With the increase of the deposition temperature, the TaN phase was increased over TaC and $Ta_3N_5$ and crystallinity, work function, conductivity and density of the film were increased. Also the oxygen uptake was decreased due to the increase of the film density. With the increase of the TaC phase in $T_aC_xN_y$ film, the work function was decreased to 4.25eV and with the increase of the TaN phase in $T_aC_xN_y$ film,it was increased to 4.48eV.

• Journal of Technologic Dentistry
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• v.36 no.3
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• pp.141-147
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• 2014

Purpose: Dental casting #Gr I (Co-25Cr-5Mo-3Sn-1Mn-1Si), #Gr II (Co-25Cr-5Mo-5Cu-1Mn -1Si) and #Gr III (Co-25Cr-5Mo-3Sn-5Cu-1Mn-1Si) master alloys of granule type were manufactured the same as manufacturing processes for dental casting Ni-Cr and Co-Cr-Mo based alloys of ingot type. These alloys were analyzed melting processes with heating time of high frequency induction centrifugal casting machine using infrared thermal image analyzer. Methods: These alloys were manufactured such as; alloy design, the first master alloy manufatured using vacuum arc casting machine, melting metal setting in crucible, melting in VIM, pouring in the mold of bar type, cutting the gate and runner bar and polishing. These alloys were put about 30g/charge in the ceramic crucible of high frequency induction centrifugal casting machine and heat, Infrared thermal image analyzer indicated alloys in the crucible were set and operated. Results: The melting temperatures of these alloys measuring infrared thermal image analyzer were decreased in comparison with remanium$^{(R)}$ GM 800+, vera PDI$^{TM}$, Biosil$^{(R)}$ f, WISIL$^{(R)}$ M type V, Ticonium 2000 alloys of ingot type and vera PDS$^{TM}$(Aabadent, USA), Regalloy alloys of shot type. Conclusion: Co-Cr-Mo based alloy in addition to Sn(#Gr I alloy) were decreased the melting temperature with heating time of high frequency induction centrifugal casting machine using infrared thermal image analyzer.

• Journal of Sensor Science and Technology
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• v.12 no.2
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• pp.72-78
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• 2003

To observe the effect of excitation coil pitch on the micro fluxgate magnetic sensor, two sensors are fabricated using multi layer board process and the pitch distance of excitation coil are $260\;{\mu}m$ and $520\;{\mu}m$, respectively. The fluxgate sensor consists of five PCB stack layers including one layer of magnetic core and four layers of excitation and pick-up coils. The center layer as magnetic core is made of a Co-based amorphous magnetic ribbon with extremely high DC permeability of ${\sim}100,000$ and has a rectangular-ring shape to minimize the magnetic flux leakage. Four outer layers as excitation and pick-up coils have a planar solenoid structure and are made of copper foil. In case of the fluxgate sensor having the excitation coil pitch of $260\;{\mu}m$, excellent linear response over the range of $-100\;{\mu}T$ to $+100\;{\mu}T$ is obtained with sensitivity of 780 V/T at excitation sine wave of $3V_{p_p}$ and 360 kHz. The chip size of the fabricated sensing element is $7.3\;{\times}\;5.7\;mm^2$. The very low power consumption of ${\sim}8\;mW$ is measured. This magnetic sensor is very useful for various applications such as: portable navigation systems, telematics, VR game and so on.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.27 no.9C
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• pp.861-870
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• 2002

In this paper, with targeting on the drawback of RSA of operation speed, a new 1024-bit RSA cryptosystem has been proposed and implemented in hardware to increase the operational speed and perform the variable-length encryption. The proposed cryptosystem mainly consists of the modular exponentiation part and the modular multiplication part. For the modular exponentiation, the RL-binary method, which performs squaring and modular multiplying in parallel, was improved, and then applied. And 4-stage CSA structure and radix-4 booth algorithm were applied to enhance the variable-length operation and reduce the number of partial product in modular multiplication arithmetic. The proposed RSA cryptosystem which can calculate at most 1024 bits at a tittle was mapped into the integrated circuit using the Hynix Phantom Cell Library for Hynix 0.35㎛ 2-Poly 4-Metal CMOS process. Also, the result of software implementation, which had been programmed prior to the hardware research, has been used to verify the operation of the hardware system. The size of the result from the hardware implementation was about 190k gate count and the operational clock frequency was 150㎒. By considering a variable-length of modulus number, the baud rate of the proposed scheme is one and half times faster than the previous works. Therefore, the proposed high speed variable-length RSA cryptosystem should be able to be used in various information security system which requires high speed operation.

• Journal of the Korean institute of surface engineering
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• v.29 no.6
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• pp.809-815
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• 1996

$Y_2O_3$-based metal-insulator-semiconductor (MIS) structure on p-Si(100) has been studied. Films were prepared by UHV reactive ionized cluster beam deposition (r-ICBD) system. The base pressure of the system was about $1 \times 10^{-9}$ -9/ Torr and the process pressure $2 \times 10^{-5}$ Torr in oxygen ambience. Glancing X-ray diffraction(GXRD) and in-situ reflection high energy electron diffracton(RHEED) analyses were performed to investigate the crystallinity of the films. The results show phase change from amorphous state to crystalline one with increasingqr acceleration voltage and substrate temperature. It is also found that the phase transformation from $Y_2O_3$(111)//Si(100) to $Y_2O_3$(110)//Si(100) in growing directions takes place between $500^{\circ}C$ and $700^{\circ}C$. Especially as acceleration voltage is increased, preferentially oriented crystallinity was increased. Finally under the condition of above substrate temperature $700^{\circ}C$ and acceleration voltage 5kV, the $Y_2O_3$films are found to be grown epitaxially in direction of $Y_2O_3$(1l0)//Si(100) by observation of transmission electron microscope(TEM). Capacitance-voltage and current-voltage measurements were conducted to characterize Al/$Y_2O_3$/Si MIS structure with varying acceleration voltage and substrate temperature. Deposited $Y_2O_3$ films of thickness of nearly 300$\AA$ show that the breakdown field increases to 7~8MV /cm at the same conditon of epitaxial growing. These results also coincide with XPS spectra which indicate better stoichiometric characteristic in the condition of better crystalline one. After oxidation the breakdown field increases to 13MV /cm because the MIS structure contains interface silicon oxide of about 30$\AA$. In this case the dielectric constant of only $Y_2O_3$ layer is found to be $\in$15.6. These results have demonstrated the potential of using yttrium oxide for future VLSI/ULSI gate insulator applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.169-169
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• 2008

To keep pace with scaling trends of CMOS technologies, high-k metal oxides are to be introduced. Due to their high permittivity, high-k materials can achieve the required capacitance with stacks of higher physical thickness to reduce the leakage current through the scaled gate oxide, which make it become much more promising materials to instead of $SiO_2$. As further studying on high-k, an understanding of the relation between the etch characteristics of high-k dielectric materials and plasma properties is required for the low damaged removal process to match standard processing procedure. There are some reports on the dry etching of different high-k materials in ICP and ECR plasma with various plasma parameters, such as different gas combinations ($Cl_2$, $Cl_2/BCl_3$, $Cl_2$/Ar, $SF_6$/Ar, and $CH_4/H_2$/Ar etc). Understanding of the complex behavior of particles at surfaces requires detailed knowledge of both macroscopic and microscopic processes that take place; also certain processes depend critically on temperature and gas pressure. The choice of $BCl_3$ as the chemically active gas results from the fact that it is widely used for the etching o the materials covered by the native oxides due to the effective extraction of oxygen in the form of $BCl_xO_y$ compounds. In this study, the surface reactions and the etch rate of $Al_2O_3$ films in $BCl_3/Cl_2$/Ar plasma were investigated in an inductively coupled plasma(ICP) reactor in terms of the gas mixing ratio, RF power, DC bias and chamber pressure. The variations of relative volume densities for the particles were measured with optical emission spectroscopy (OES). The surface imagination was measured by AFM and SEM. The chemical states of film was investigated using X-ray photoelectron spectroscopy (XPS), which confirmed the existence of nonvolatile etch byproducts.