• Title/Summary/Keyword: metal deposition

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Factors Controlling the Deposition of Airborne Metals on Plant Leaves in a Subtropical Industrial Environment

  • Gajbhiye, Triratnesh;Pandey, Sudhir Kumar;Kim, Ki-Hyun
    • Asian Journal of Atmospheric Environment
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    • v.10 no.3
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    • pp.162-167
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    • 2016
  • This study was conducted in an industrial city (Bilaspur) representative of subtropical area in central India. In order to assess the metal deposition on plant, concentrations of six target metals (i.e., Fe, Mn, Pb, Cu, Cd, and Cr) in both plant leaf and dust (deposited on its surface) samples were measured from six different sites. Metal concentrations in dust samples were found on the order of Fe>Mn> Cr>Pb>Cu>Cd. In contrast, the concentration of metals in plant leaves were seen on the order of Fe>Mn>Cr>Cd>Cu>Pb. As such, Cd showed significantly high concentration in leaves relative to their corresponding dust samples. A high accumulation potential for Fe and Cd was seen from Butea monosperma, while Mn and Pb were accumulated noticeably in Pongamia pinnata and Butea monosperma. Likewise, Cr and Cu were enriched in Calotropis procera, Alstonia scholaris, and Butea monosperma. The overall results of our study suggest that the foliar uptake pattern should vary considerably by an interactive role between plant and metal types.

Ru and $RuO_2$ Thin Films Grown by Atomic Layer Deposition

  • Shin, Woong-Chul;Choi, Kyu-Jeong;Jung, Hyun-June;Yoon, Soon-Gil;Kim, Soo-Hyun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.149-149
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    • 2008
  • Metal-Insulator-Metal(MIM) capacitors have been studied extensively for next generation of high-density dynamic random access memory (DRAM) devices. Of several candidates for metal electrodes, Ru or its conducting oxide $RuO_2$ is the most promising material due to process maturity, feasibility, and reliability. ALD can be used to form the Ru and RuO2 electrode because of its inherent ability to achieve high level of conformality and step coverage. Moreover, it enables precise control of film thickness at atomic dimensions as a result of self-limited surface reactions. Recently, ALD processes for Ru and $RuO_2$, including plasma-enhanced ALD, have been studied for various semiconductor applications, such as gate metal electrodes, Cu interconnections, and capacitor electrodes. We investigated Ru/$RuO_2$ thin films by thermal ALD with various deposition parameters such as deposition temperature, oxygen flow rate, and source pulse time. Ru and $RuO_2$ thin films were grown by ALD(Lucida D150, NCD Co.) using RuDi as precursor and O2 gas as a reactant at $200\sim350^{\circ}C$.

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Preparation of $Ba_{1-x}Sr_xTiO_3$thin films by metal by metal-organic chemical vapor deposition and electrical properties. (Preparation of $Ba_{1-x}Sr_xTiO_3$ thin films by metal-organic chemical vapor deposition and electrical properties)

  • Yoon, Jong-Guk;Yoon, Soon-Gil;Lee, Won-Jae;Kim, Ho-Gi
    • Journal of the Korean Vacuum Society
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    • v.5 no.1
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    • pp.62-66
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    • 1996
  • $(Ba_{1-x}Sr_xTiO_3$ (BST) thin films have been grown on Pt-coated MgO by metal -organic chemical vapor deposition. X-ray diffraction results showed that BST films were grown on a Pt/MgO substrate with (100) preferred orientation perpendicular to the surface. The lineawr relationship of P-E curve obtained form hysteresis loop measurement indicated that the BST films had a Curie transitions below room temperature . Films deposited at $900^{\circ}C$ exhibited a smooth and dense microstructure, a dielectric constant of 202, and a dissipation facotr of 0.02 at 100kHz. The leakage current density of the BST films is about $2\times10^{-10} \;A/\textrm{cm}^2$$ at an applied electric field of 0.2 MV/cm. The electrical behavior on the current-voltage characteristics is well explained by the bulk-limited Pool-Frenkel emission.

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A Review of Epitaxial Metal-Nitride Films by Polymer-Assisted Deposition

  • Luo, Hongmei;Wang, Haiyan;Zou, Guifu;Bauer, Eve;Mccleskey, Thomas M.;Burrell, Anthony K.;Jia, Quanxi
    • Transactions on Electrical and Electronic Materials
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    • v.11 no.2
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    • pp.54-60
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    • 2010
  • Polymer-assisted deposition is a chemical solution route to high quality thin films. In this process, the polymer controls the viscosity and binds metal ions, resulting in a homogeneous distribution of metal precursors in the solution and the formation of crack-free and uniform films after thermal treatment. We review our recent effort to epitaxially grow metal-nitride thin films, such as hexagonal GaN, cubic TiN, AlN, NbN, and VN, mixed-nitride $Ti_{1-x}Al_xN$, ternary nitrides tetragonal $SrTiN_2$, $BaZrN_2$, and $BaHfN_2$, hexagonal $FeMoN_2$, and nanocomposite TiN-$BaZrN_2$.

Support Effect of Catalytic Activity on 3-dimensional Au/Metal Oxide Nanocatalysts Synthesized by Arc Plasma Deposition

  • Jung, Chan Ho;Naik, B.;Kim, Sang Hoon;Park, Jeong Y.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.08a
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    • pp.140.2-140.2
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    • 2013
  • Strong metal-support interaction effect is an important issue in determining the catalytic activity for heterogeneous catalysis. In this work, we report the catalytic activity of $Au/TiO_2$, $Au/Al_2O_3$, and $Au/Al_2O_3-CeO_2$ nanocatalysts under CO oxidation fabricated by arc plasma deposition (APD), which is a facile dry process with no organic materials involved. These catalytic materials were characterized by transmission electron microscopy (TEM), energy-dispersive X-ray spectroscopy (EDS) and $N_2$-physisorption. Catalytic activity of the materials has measured by CO oxidation using oxygen, as a model reaction, in a micro-flow reactor at atmospheric pressure. Using APD, the catalyst nanoparticles were well dispersed on metal oxide powder with an average particle size (3~10 nm). As for catalytic reactivity, the result shows $Au/Al_2O_3-CeO_2$ nanocatalyst has the highest catalytic activity among three samples in CO oxidation, and $Au/TiO_2$, and $Au/Al_2O_3$ in sequence. We discuss the effects of structure and metal-oxide interactions of the catalysts on catalytic activity.

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Silver Ores and Fluid Inclusions of the Cheolam Silver Deposits (철암은광상(鐵岩銀鑛床)의 광석(鑛石)과 유체포유물(流體包有物))

  • Park, Hee-In;Woo, Young-Kyun;Bae, Young Boo
    • Economic and Environmental Geology
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    • v.20 no.1
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    • pp.1-18
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    • 1987
  • The Cheolam silver deposits are emplaced along the fractures in breccia dike and the Hongjesa granite. Breccia dike contains fragments of late Cretaceous acidic volcanic rocks and other fragments of various rocks distributed in the mine area. Therefore it is presumed that the mineralization was taken place in later than late Cretaceous time. Mineral paragenesis is complicated by multiple episodes of fracturing. Six distinct depositional stages can be recognized: stage I, deposition of base metal sulfides; stage II, deposition of base metal sulfides and silver minerals; stage III, deposition of carbonates; stage IV, deposition of silver minerals and base metal sulfides; stage V, deposition of silver minerals; stage VI, deposition of barren quartz. Silver minerals from the deposits are native silver, acanthite, pyrargyrite, argentian tetrahedrite, stephanite, polybasite, pearceite, allargentum, antimonial silver and electrum. Fluid inclusion studies ware carried out for stage I, II, IV and VI quartz and stage III calcite. Homogenization temperatures for each stage are as follows: stage I, from $225^{\circ}$ to $360^{\circ}C$; stage II, from $145^{\circ}$ to $220^{\circ}C$; stage III, from $175^{\circ}$ to $240^{\circ}C$; stage IV, from $130^{\circ}$ to $185^{\circ}C$; stage VI, from $120^{\circ}$ to $145^{\circ}C$. Salinities of ore fluids were in the range of 4 and 10 wt.% equivalent NaCl over stage I and stage VI. Ore mineralogical data of each stage indicate that temperatures are within the range of homogenization temperature of fluid inclusions and sulfur fugacities declined steadily from $10^{-9.7}atm$. to $10^{-18.7}atm$. through stage I into stage V.

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Gold and Silver Mineralization of Samhyungje Vein, the Mugeug Mine (무극광산(無極鑛山) 삼형제맥(三兄弟脈)의 금은광화작용(金銀鑛化作用))

  • Park, Hee-In;Kang, Seong Jun
    • Economic and Environmental Geology
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    • v.21 no.3
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    • pp.257-268
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    • 1988
  • The Mugeug gold deposits is consisted of more than fourteen gold and silver-bearing quartz veins emplaced in Mesozoic granodiorite mass. In the Samhyungje vein, one of the representative vein in the mine, six stages of mineralizatidns are recognized: Stage I, deposition of base-metal sulfides and gray quartz; stage II, deposition of base-metal sulfides, electrum and white quartz with pinkish tint; stage m, deposition of base-metal sulfides and dark gray quartz; stage N, deposition of native silver, argentite, Ag-tetrahedrite, polybasite, arsenpolybasite and quartz; stage V, deposition of nearly barren quartz; stage VI, deposition of transparent quartz veinlets with minor pyrite. Ag contents of electrum increase steadily from stage II to stage N; 57.25-61.44 atom. % for stage II, 62.85-69.66 atom. % for stage m, 69.79-74.12 atom. % for stage N. Homogenization temperatures of fluid inclusions are as follows; stage II, from $194^{\circ}$ to $287^{\circ}C$; stage V, from $137^{\circ}$ to $171^{\circ}C$, stage VI, from $192^{\circ}$ to $232^{\circ}C$. Salinities of fluid inclusions range from 3.7 to 7.9 wt.% equivalent NaCl in stage II and from 0.8 to 4.3 wt.% equivalent Nael in stage V. Ore mineralogy suggest that temperature and sulfur fugacity declined steadily from $290^{\circ}$ to $150^{\circ}C$ and from $10^{-10.5}$ to $10^{-19.0}$atm. through stage II into stage N. Fluid pressure during stage II inferred from data of mineral assemblages and fluid inclusions is 370bar.

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Preparation of EMI Shielding Sheet by PVD Method and Its Characteristic of EMI Shielding Efficiency (PVD법을 이용한 전자파 차폐용 시트 제조 및 차폐효율 특성)

  • Chae, Seong-Jeong;Hong, Byung-Pyo;Lee, Byoung-Soo;Byun, Hong-Sik
    • Applied Chemistry for Engineering
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    • v.21 no.5
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    • pp.527-531
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    • 2010
  • The optimized sheet for EMI shielding was prepared by metal power with Fe series. Then various metal powders were deposited on the sheet by PVD method. Moreover, the PVdF nanofiber membrane was used to compare the characteristic of EMI shielding efficiency of various metal powders. The electrical property was measured by the 4-point probe method. The result from EDS confirmed that the metal powder existed on the sheet. EMI shielding efficiency was analysed by EMI shielding measurement apparatus. The lowest electrical resistance, $641.95{\Omega}{wcdot}cm$, was obtained with $1000\;{\AA}$ deposition of Cu on the sheet. It was revealed that the EMI shielding efficiency increased with increase of the metal deposition thickness. The sheet deposited by Cu with $1000\;{\AA}$ showed the highest EMI shielding efficiency, 32.5 dB.