• Journal of Electrical Engineering and Technology
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• v.12 no.2
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• pp.846-851
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• 2017

Piezoelectricity is the capability of a piezoelectric material to change mechanical energy into electrical energy. The determination of electrical and mechanical properties plays a significant role in characterizing the piezoelectric material. The energy losses characteristics of piezoelectric material can be described by mechanical quality factor. In this paper, the output voltage and mechanical quality factor of Lead Zirconate Titanate (PZT-4A) piezoelectric material is determined under various resistance and loading conditions by using the test setup. The commercial FEM software ABAQUS is used to analyze the performance of piezoelectric material under static loading conditions. It is observed that these properties affect the performance of a material particularly in the designing of smart structures. The experimental results are partially compared to the simulation values.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1991.10a
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• pp.73-78
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• 1991

In this study of stacked type film chip capacitor, the important parameters are heat-treated temperature, pressure and time. We measured the temperature dependence of dielectric properties and dissipation factor and the frequency dependence of dielectric properties, dissipation factor, ESR(Equivalent Series Resistance) and impedance in stacked type film capacitor. As a result, the best conditions of heat-treated temperature, pressure and time were proved to be 130$^{\circ}C$, 10kg/$\textrm{cm}^2$ and 3hrs, respectively.

• Steel and Composite Structures
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• v.51 no.2
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• pp.203-223
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• 2024

This study shows functionally graded material structural topology optimization under buckling constraints. The SIMP (Solid Isotropic Material with Penalization) material model is used and a method of moving asymptotes is also employed to update topology design variables. In this study, the quadrilateral element is applied to compute buckling load factors. Instead of artificial density properties, functionally graded materials are newly assigned to distribute optimal topology materials depending on the buckling load factors in a given design domain. Buckling load factor formulations are derived and confirmed by the resistance of functionally graded material properties. However, buckling constraints for functionally graded material topology optimization have not been dealt with in single material. Therefore, this study aims to find the minimum compliance topology optimization and the buckling load factor in designing the structures under buckling constraints and generate the functionally graded material distribution with asymmetric stiffness properties that minimize the compliance. Numerical examples verify the superiority and reliability of the present method.

• Journal of the Korean Geotechnical Society
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• v.28 no.8
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• pp.31-41
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• 2012

Pile foundation for transmission tower constructed in weak ground can cause the damage of the tower due to the different settlement between the foundations. In Japan and USA, connected-pile foundations whose 4 foundations are connected each other by beams were used for transmission tower (TEPCO 1988, IEEE 2001). Resistance increasing factors for connected-pile foundation signify increasing amount of resistance due to the effect of connected-pile material. In this study, we performed model lateral load tests of connected-pile foundations for transmission tower and found the resistance increasing factors for connected-pile foundation. The tests were performed in silty clay, and the resistance increasing factors were founded in various conditions that lateral load directions and height, the stiffness of beams in the connected-pile foundations were changed. The resistance increasing factors from our research were presented as a function of normal lateral loading height and normal stiffness of the connected-pile material. The resistances which were estimated from the resistance increasing factors were similar to measured values.

• The Journal of the Korea Contents Association
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• v.12 no.7
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• pp.445-452
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• 2012

This study is used to analyze the distribution of resistance factors and the relationships of flow resistance with the field measurements which consist of the total 2,604 rivers for 1,865 bed material in natural channels and 739 vegetation in vegetated channels. Resistance factor relationships and distribution range of Manning roughness coefficients and Darcy-Weisbach friction coefficients by the regression analysis are derived from the power law form as a function of flow discharge and friction slope with bed materials and vegetations in natural and vegetated rivers, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.87-91
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• 1998

In this paper, We analyzed the current-voltage characteristics with n-type silicon substrates concentration and temperature variations (Room temperature, 50$^{\circ}C$, 75$^{\circ}C$) in platinum silicide and silicon junction. The electrical parameters of measurement are turn-on voltage, saturation current, ideality factor, barrier height, dynamic resistance in forward bias and reverse breakdown voltage according to variations of junction concentration of substrates and measurement temperature variations. As a result, the forward turn-on voltage, reverse breakdown voltage, barrier height and dynamic resistance were decreased but saturation currents and ideality factor were increased by substrates increased concentration variations in platinum silicide and n-silicon junction. In increased measurement temperature (RT, 50$^{\circ}C$, 75$^{\circ}C$), the extracted electrical parameter values of characteristics were rises by increased temperature variations according to the forward and reverse bias.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.97-100
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• 2001

This paper presents the characteristics of Ta-N thin-film strain gauges as high-temperature strain gauges, which were deposited on Si substrate by DC reactive magnetron sputtering in an argon-nitrogen atmosphere(Ar-(4∼16 %)N$_2$). These films were annealed for 1 hour in 2x10$\^$-6/ Torr vaccum furnace range 500∼1000$^{\circ}C$. The optimized conditions of Ta-N thin-film strain gauges were annealing condition(900$^{\circ}C$, 1 hr.) in 8% N$_2$ gas flow ratio deposition atmosphere. Under optimum conditions, the Ta-N thin-films for strain gauges is obtained a high resistivity, $\rho$=768.93 ${\mu}$Ω cm, a low temperature coefficient of resistance, TCR=-84 ppm/$^{\circ}C$ and a high temporal stability with a good longitudinal gauge factor, GF=4.12.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.7
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• pp.645-651
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• 2008

To reduce noise in high frequency and distortion of signal, the composition of $(Ca_{0.7}Sr_{0.3})(Zr_{0.97}Ti_{0.03})O_3$ and $(Ba_{0.2}Ca_{0.4}Sr_{0.4})TiO_3$ was developed. The composition was not solid solution, but mixtures of various phases composed of Ca, Sr, Zr, Ti and Ba oxides. The dielectric constant increased, the quality factor and the insulation resistance decreased with $(Ba_{0.2}Ca_{0.4}Sr_{0.4})TiO_3$ content. The composition of $0.4(Ba_{0.2}Ca_{0.4}Sr_{0.4})TiO_3$ satisfied the electric characteristics and the temperature coefficient of dielectric constant (TCC). In addition, the glass frit and $MnO_2$ also affected the electric characteristics. From the result of the best fit simulation, $MnO_2$ 0.3 mol%, the glass frit 0.6 wt% showed the insulation resistance $906{\Omega}{\cdot}F$, the quality factor 821, and the dielectric constant 92. With the selected composition, MLCC capacitors sized $4.5{\times}3.2{\times}2.5mm$ were manufactured with 105 layered of the dielectric thickness $16{\mu}m$ using Ni inner electrode, They represented the capacitance $98{\sim}102$ nF, the quality factor 1,200 and the insulation resistance $1,500{\Omega}{\cdot}F$. Also, they had high break-down voltage with $107{\sim}115V/{\mu}m$, and satisfied the SL TCC characteristics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1993.11a
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• pp.85-89
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• 1993

Silicone oil exhibits the properies of both organic and inorganic substances and, thus, it has many superior properties such as higher thermal resistance and lower thermal oxidation level when compared to other dielectric liquids. In order to investigate the dielectric characteristics, dielectric liquids of viscosity 1 [cSt] is chosen as the specimen and experiment is performed in the temperature range of 20∼65 [$^{\circ}C$] and frequency range of 30∼1${\times}$10$\^$6/ [Hz] respectively. As a result, the observed linear decrease in dissipation factor at the frequency range below 3 [kHz] is due to the influence of frequency, whereas the increase in dissipation factor at higher frequency range is contributed by electrode's resistance. At a fixed frequency of 30 [kHz], increasing temperature results in higher peak value and wide width of the absorption curve. This is due to the increase in dipole and viscosity. As temperature increases, dipole moment is decreased from 0.98 to 0.64 [debye]. The activation energy which causes the relaxation and loss of dielectric is obtained about 15 [kcal/mole].

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.29-29
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• 2008

Platinum Thin films were deposited on $Al_2O_3$ by Rf magnetic Sputtering. The physical and electrical characteristics of these films were analyzed under various deposition conditions(Ar gas pressure, input power, substrate temperature.) and annealing condition. The deposition rate was increased with increasing the input power but not increased linear. In the other factor, The Pt thin films property was associated with resistance. so lower resistance had more and more good Pt thin films condition. For the purpose of this study, we will get the best Pt thin film characteristics.