• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.07a
• /
• pp.362-365
• /
• 2002

Hf thin films were deposited on bottom metal using a RF magnetron sputtering method followed by oxidation and annealing in O$_2$ and N$_2$ ambient, respectively. Various top metal electrodes (i.e., Al, Au, and Cu) were deposited by evaporation, and their roles on physical and electrical properties were investigated. Using the XRD, SEM and AFM techniques, we confirmed that the grain size of HfO$_2$ thin films enlarges as a function of oxidation temperature, increasing dielectric constant. However, other electrical properties (e.g., tan) deteriorateas a consequence. The dielectric constant and tan of HfO$_2$ thin films oxidized at 500 $^{\circ}C$ were 17-25 and 3${\times}$10-3 - 2x10-2, respectively, in the frequency range of 1 Hz to 1 MHz. The leakage current density was less than 1${\times}$10-8A/cm2 up to 0.7 MV/cm. In addition, electrical properties of HfO$_2$ thin films (e.g., the dielectric constant, leakage current and tan $\delta$) depend on top metal electrode. We showed that Al top metal electrode results in the best result.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.07b
• /
• pp.1102-1105
• /
• 2003

Energy distribution function for electrons in $SF_6$-Ar mixtures gas used by MCS-BEq algorithm has been analysed over the E/N range $30{\sim}300[Td]$ by a two term Boltzmann equation and by a Monte Carlo Simulation using a set of electron cross sections determined by other authors, experimentally the electron swarm parameters for 0.2(%) and 0.5(%) $SF_6$-Ar mixtures were measured by time-of-flight(TOF) method, The results show that the deduced electron drift velocities, Electrons Drift Velocities for a rang of E/N values. As a consequence, it was known that the spatial growth rates and the dielectric behaviors in $SF_6$-Ar mixtures are strongly dependent on the addition rate of $SF_6$ gas but the transport coefficients of electrons are insensitive to the addition rate of $SF_6$ gas. The results obtained from Boltzmann equation method and Monte Carlo simulation have been compared with present and previously obtained data and respective set of electron collision cross sections of the molecules.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.05b
• /
• pp.331-334
• /
• 2000

The organic electroluminescent(EL) device has gathered much interest because of its large potential in materials and simple device fabrication. We fabricated EL devices which have a blended single emitting layer containg poly(Nvinylcarbazole)[PVK] and poly(3-dodecylthiophene)[P3DoDT]. The molar ratio between P3DoDT and PVK changed with 1:0, 2:1 and 1:1. To improve the external quantum efficiency of EL devices, we applied insulating layer, LiF layer between polymer emitting layer and AI electrode. All of the devices emit orange-red light and it's can be explained that the energy transfer occurs from PVK to P3DoDT. Within the molar ratio 1:0, 2:1 and 1:1, the energy transfer was not saturated, which results in the not appearance of PVK emission in the blue region. In the voltage-current and voltage-light power characteristics of devices applied LiF layer, current and light power drastically increased with increasing with applied voltage. In the consequence of the result, the light power of the device have a molar ratio 1:1 with LiF layer was about 10 times larger than that of the device without PVK at 6V.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.11a
• /
• pp.202-202
• /
• 2008

The world gross market of many kinds of electronics, such as TV and mobile phone has been increasing rapidly these days. It is mainly caused by the amazing developments of IT technology during past decade and the changes of individual life style for the better. Thanks to the increases of electronics manufactured in quantity, much more electronic components such as MLCC (multi layer ceramic capacitor) and PCB (printed circuit board), which are our main products, have been needed as a consequence. Though it was reported that total market of electronic components exceeds several hundreds of billion dollars, there are many manufactures struggling for survival in the competition of electronics components. Then the recognition of quality as a key technology has spread and the efforts for high-yield production lines have been kept in many companies. In this paper, our efforts to eliminate the contamination of particles and the diffusion of some volatile organic compounds which is very harmful to workers at production line have been introduced.

• Korean Journal of Logic
• /
• v.17 no.1
• /
• pp.197-217
• /
• 2014

In my previous papers, I have argued that the so-called 'Uncontested Principle' does not hold for indicative conditionals based on inductive reasoning. This is mainly because if we accept that a material conditional '$A{\supset}C$' can be inferred from an indicative conditional based on inductive reasoning '$A{\rightarrow}_iC$', we get an absurd consequence such that we cannot distinguish between claiming 'C' to be probably true and claiming 'C' to be absolutely true on the assumption 'A'. However, in his recent paper "Uncontested Principle and Inductive Argument", Eunsuk Yang objects that my argument is unsuccessful in disputing the Uncontested Principle. In this paper, I show that his objections are irrelevant to my argument against the Uncontested Principle.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.16 no.1
• /
• pp.53-59
• /
• 2003

Using Platinum-silicide (PtSi) formed between silicon substrate and carbon film, we have improved the field emission of electrons from carbon films. Pt films were deposited on n-Si(100) substrates at room temperature by DC sputter technique. After deposition, these PtSi thin films were annealed at 400 ~ $600^{\circ}C$ in a vacuum chamber, and the carbon films were deposited on those Pt/Si substrates by laser ablation at room temperature. The field emission property of C/Pt/Si system is found to be better than that of C/Si system and it is showed that property was improved with increasing annealing temperature. The reasons why the field emission from carbon film was improved can be considered as follows, (1)the resistance of carbon films was decreased due to graphitization, (2)electric field concentration effectively occurred because the surface morphology of carbon film deposited on Pt/si substrates with rough surface, (3)it is showed that annealing induced reaction between Pt film and Si substrate, as a consequence that the interfacial resistance between Pt film and Si substrate was decreased.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.04a
• /
• pp.68-71
• /
• 2002

The electromagnetic properties and thermal behavior of ferrite cores used in the blocking filter for PLC were investigated as a function of additives. The highest density of 4.98 $g/cm^2$ and permeability of 8221 were obtained to the specimen added $MoO_3$ 400 ppm, $SiO_2$ 100 ppm and CaO 200 ppm since the microstructures were compacted through reduction of pores in the specimen. The permeability was increased up to 13094 at $110^{\circ}C$ with increasing temperature of specimen, however, it was decreased precipitously to under 100 over $110^{\circ}C$. The exothermic behavior was observed that the temperature of specimens became $102^{\circ}C$ at 1MHz. In the consequence, the ferrite core developed by this research will maintain the stable electromagnetic properties since the temperature of ferrite core rose to $93^{\circ}C$ in the range of 10kHz to 450kHz bandwidth qualified for PLC.

• Transactions of the Korean Society of Mechanical Engineers A
• /
• v.29 no.10 s.241
• /
• pp.1392-1398
• /
• 2005

API 581 guideline provides a methodology for calculating the risks of equipments in refinery or petrochemical plant. However, especially in part of the consequence of failure, there is a major limitation of its application to the petrochemical plant directly since only a representative material is considered in calculating the risk while the equipment is composed of numerous materials. The objectives of this paper are to propose an enhanced risk-based inspection (RBI) technique to resolve shortcomings inclusive of the above issue and to assess the risks of typical petrochemical equipments. In this respect, a program incorporating material database was developed to fully incorporate the characteristics of different materials. The proposed RBI program consists of qualitative, semi-quantitative and quantitative risk evaluation modules in which toxic materials as well as representative materials were selected automatically for comparison to those in the current guideline. It has been applied to assess the risks of equipments in ethylene facilities of petrochemical plants. Thereby, more realistic evaluation results were obtained and applicability of the proposed RBI program was proven.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1990.10a
• /
• pp.88-90
• /
• 1990

In this study, PN junction solar cell and P$\^$+/-N-N$\^$+/ BSF solar cell, using N-type(111), 10$\^$16/[atoms/cm$\^$-3/] wafer, were fabricated applying that ion implant method whose dose are 1E14, 1E15, 3E15 and its acceleration energy is 50Key, 100Key respectively. The impurity concentration of two types of front-side are 10$\^$18/[atoms/cm$\^$-3/] and back-side concentration for BSF solar cell is 10$\^$17/[atoms/cm$\^$-3/]. As a result of comparison for 2 typical types of cells out of various fabricated samples, open circuit voltage (Voc), short circuit current(Isc) of BSF solar cell are larger than those of PN solar cell by 48[%], 14[%]. Considering that the efficiency of BSF cell is 2.5[%] as well as PN solar cell's is 7.5[%], 10.0[%] of efficiency improvement effect can be obtained from BSF solar cell. Futhermore, in consequence of front-side impurity concentration change from 10$\^$17/[atoms/cm$\^$-3] to 10$\^$20/[atoms/cm$\^$-3/] alternately, the most ideal result can be expected when it is 10$\^$18/[atoms/cm$\^$-3/].

• 제어로봇시스템학회:학술대회논문집
• /
• 1991.10b
• /
• pp.1705-1711
• /
• 1991

On-line fault detection and diagnosis has an increasing interest in a chemical process industry, especially for a process control and automation. The chemical process needs an intelligent operation-aided workstation which can do such tasks as process monitoring, fault detection, fault diagnosis and action guidance in semiautomatic mode. These tasks can increase the performance of a process operation and give merits in economics, safety and reliability. Aiming these tasks, series of researches have been done in our lab. Main results from these researches are building appropriate knowledge representation models and a diagnosis mechanism for fault detection and diagnosis in a chemical process. The knowledge representation schemes developed in our previous research, the symptom tree model and the fault-consequence digraph, showed the effectiveness and the usefulness in a real-time application, of the process diagnosis, especially in large and complex plants. However in our previous approach, the diagnosis speed is its demerit in spite of its merits of high resolution, mainly due to using two knowledge models complementarily. In our current study, new knowledge representation scheme is developed which integrates the previous two knowledge models, the symptom tree and the fault-consequence digraph, into one. This new model is constructed using a material balance, energy balance, momentum balance and equipment constraints. Controller related constraints are included in this new model, which possesses merits of the two previous models. This new integrated model will be tested and verified by the real-time application in a BTX process or a crude unit process. The reliability and flexibility will be greatly enhanced compared to the previous model in spite of the low diagnosis speed. Nexpert Object for the expert system shell and SUN4 workstation for the hardware platform are used. TCP/IP for a communication protocol and interfacing to a dynamic simulator, SPEEDUP, for a dynamic data generation are being studied.