• 반도체디스플레이기술학회지
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• 제19권3호
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• pp.55-60
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• 2020

The hard mask photo-resist strip inspection system for the semiconductor wafer manufacturing process inspects the position of the circuit pattern formed on the wafer by measuring the distance from the edge of the wafer to the strip processing area. After that, it is an inspection system that enables you to check the process status in real time. Process defects can be significantly reduced by applying a tester that has not been applied to the existing wafer strip process, edge etching process, and wafer ashing process. In addition, it is a technology for localizing semiconductor process inspection equipment that can analyze the outer diameter of the wafer and the state of pattern formation, which can secure process stability and improve wafer edge yield.

• 유통과학연구
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• 제17권4호
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• pp.51-57
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• 2019

Purpose - This study aims to improve the distribution structure of the OLED market and develop cost-effective optimization techniques. Specifically, it is a study on the optimization of ferric chloride to improve the etch of SUS MASK for OLED. Research design, data, and methodology - Applying the optimal conditions of the experiment, the final confirmation was evaluated for improvement by the Process Capability Index (Cpk). It is possible to derive social performance such as improvement of precision of SUS MASK manufacturing, economic performance such as defect rate, reduction of waste generation and treatment cost, technological achievement such as SUS MASK production technology, improvement of profit structure of technology development and process improvement do. Results - The improvement of the Cpk before the improvement was made was confirmed to be 0.57% with a defect estimate of 25.07% with a failure estimate of 0.57% after the improvement, and 8.84% with a failure estimate of 0.57% level after the improvement. Conclusions - If the conclusions obtained from the specimen experiment are applied to the manufacturing process of SUS MASK, it will be possible to expect excellent cost-effective competitiveness due to the improvement of precision and reduction of defect rate to enhance the OLED market penetration.

• 청정기술
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• 제13권3호
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• pp.188-194
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• 2007

급속한 성장에 따른 디스플레이 산업에서의 생산량 증가는 원료 사용의 증가와 배출액의 증가를 야기하고 있으며 이에 따른 폐액 처리양이 증가되어 환경적, 경제적 문제점을 안고 있다. 본 연구에서는 브라운관 소재인 shadow mask의 식각공정 시 사용한 식각용액의 피로도를 감수시키기 위하여 산화반응을 이용하여 신액 사용량과 구액 배출량을 최소화해주는 GRS(Green Recycling System)공정의 수율을 향상시키기 위해 실험실 및 현장적용 실험을 통하여 공정의 최적화를 하기위한 방법을 연구하였다. 공정변수들과 GRS 공정의 수율과의 관계를 규명하였으며 GRS 반응기의 내부구조 개선으로 인해 약 10%의 수율증가를 확인하였으며 공정의 수율 향상과 최적화에 큰 도움이 되었다.

• 산업공학
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• 제11권2호
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• pp.107-117
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• 1998

This paper presents a useful method of registration in manufacturing of shadow color mask for cathode ray tubes of the FTM (Flat Tension Mask) type, wherein the shadow mask and front panel are interchangeable when mask-panels are assembled, which is called ICM system. Theoretical analysis and alignment process are presented. The pattern of mask aperture is registered with a screen pattern of corresponding geometry of the panel in flat tension mask tube. Registration accuracy of panel and mask affects the purity of color cathode ray tube concerned with mislanding. It tries to minimize the misregistration caused by variances, which are mechanical error, mask stretching position error, restrictive number of fiducial point, etc.

• 전자공학회논문지D
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• 제34D권12호
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• pp.62-67
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• 1997

The optical lithography wit an ArF excimer laser as a light source is expected to be used in the mass production of giga-bit DRAMs which require less than 0.2.mu.m minimum feature size. In this case, the distortion of a patterned image becomes very severe, since the lithography porcess is performed at the resolution limit. Traditionally, the photomask pattern was designed and revised with trial-and-error methods, such as repeated execution of process simulators or actual process experiments which require time and effort. Ths paper describes a program which automatically finds an optimal mask pattern. The program divides the mask plane into cells with same sizes, chooses a cell randomly, changes the transparent/opaque property of the cell, and eventually genrates a mask pattern which produces required image pattern. The program was applied to real DRAM cell patterns to produce mask patterns which genertes image patterns closer to object images than original mask patterns.

• 한국정밀공학회지
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• 제20권6호
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• pp.214-221
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• 2003

Tension mask assembly is positioned right behind the glass-made front panels of CRT type display devices. The frame-supported thin metal sheet contains numerous slits, through which electron beams are focused to enhance definition. Pretension is imposed on the masks, especially for enlarged flat screens, in order to avoid vibration due to acoustic or mechanical impact. High temperature assembly process subsequent to pretensioning, however, degenerates the creep resistance of common mask materials, and if tensile stress is high enough, tension on the mask may be loosened substantially due to creep deformation. In this study, the assembly is modeled as a combined structure of beams and wire array, and a numerical simulation is attempted for pretensioning followed by high temperature process. According to a model study, small amount of creep strain is likely to be generated, but its adverse influence is not negligible. Some structural modification measures to reduce the creep-induced tension loosening are proposed and evaluated. Also, optimal configuration of frame structure is sought for, which maintains high tension of masks and minimizes the possible creep of frame simultaneously.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2006년도 춘계학술대회 논문집
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• pp.493-494
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• 2006

SU-8 can be implemented as a mask for micro Abrasive Jet Machining (micro-AJM) process [1]. In this paper, we will evaluate the quality of micro grooving result on glass substrate by micro-AJM process which using SU-8 as a mask. It was evaluated on width and edge profile of the micro grooving. The result was having distortion compare with the master film used to pattern the SU-8 mask. The value of distortion with other properties which came along with it, such as depth and surface roughness, can be optimized in order to fabricate micro-channel for micro-fluidic application.

• 대한기계학회논문집A
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• 제27권6호
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• pp.1034-1040
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• 2003

Tension mask is a part of CRT type devices, which is installed right behind glass-made front panel. Numerous slits on the thin metal sheet enable the electron beams emitted from posterior gun to be focused, resulting in enhanced definition. Flattened and enlarged displays necessitate the imposition of pretension on the masks, in order to improve the robustness of display quality against vibration or impact. High temperature assembly process subsequent to pretensioning, however, degenerates creep resistance of mask material, and common mask may become susceptible to undesirable elongation due to creep. Once tensile stress becomes high enough to induce creep deformation, pretension is substantially loosened. In this study, tension mask assembly is modeled as a combined structure of beams and wire array, and a numerical simulation is attempted for pretensioning followed by high temperature process. Based on a model study, creep occurrence is found to be probable and its adverse influence is quantified. As fur maintaining high tensile force, simply increasing pretension does not seem to be helpful. Instead, the structure of frame needs to be modified somehow, or material for mask needs to be selected properly.

• 대한기계학회논문집A
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• 제30권10호
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• pp.1314-1319
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• 2006

This paper describes the novel fabrication method of the high-aspect-ratio nano structure which is impossible by conventional method using a shadow mask and a Deep X-ray Lithography (DXRL). The shadow mask with $1{\mu}m-sized$ apertures is fabricated on the silicon membrane using a conventional UV-lithography. The size of aperture is reduced to 200nm by accumulated low stress silicon nitride using a LPCVD (low pressure chemical vapor deposition) process. The X-ray mask is fabricated by depositing absorber layer (Au, $3{\mu}m$) on the back side of nano shadow mask. The thickness of an absorber layer must deposit dozens micrometers to obtain contrast more than 100 for a conventional DXRL process. The thickness of $3{\mu}m-absorber$ layer can get sufficient contrast using a central beam stop method, blocking high energy X-rays. The nano circle and nano line, 200nm in diameter in width, respectively, were demonstrated 700nm in height with a negative photoresist of SU-8.

• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 2006년도 춘계학술대회 논문집
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• pp.314-317
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• 2006

Electroformed part is widely used in modem manufacturing industries, especially semi-conductor division. It is basically a specialized form of electroplating. So, it has very similar parameters with electroplating. The object of this study is development of the fine metal mask by electroforming process. In this paper considered two parameters. The first is relationship of UV exposure and soft baking time. The other one is thickness uniformity of electroformed parts by distance of between electrodes. This paper presents the fabrication method of fine metal mask by electroforming process.