• Journal of Magnetics
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• v.8 no.2
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• pp.98-102
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• 2003

Microstructure and magnetic transport phenomina in rf sputtered AIN/CO type ten- layered discontinuous films of nanoscaled [AIN(3 nm)/Co(t nm)]…$_10$ with t$_Co$=1.0∼2.0 nm have been investigated. The microstructure and tunneling magnetic resistance of the samples are strongly dependent on the thickness of Co layer, Negative tunneling magneto-resistance due to the spin-dependent transport has been observed along the current-in-plane configuration in the samples having the Co layers below 1.6 nm thick. When the thickness of Co layer was less than 1.2 nm, randomly oriented granular Co particles were completely isolated and embedded in amorphous AIN matrix, and the films showed the superparamagnetic behavior with a high MR value of ${\Delta}p/p_0$=1.8%. As t$_Co$ increases, a transition from the regime of co-existence of superparamagnetic and ferromagnetic behaviors to ferromagnetic behavior was observed. funneling barrier called “decay length far tunneling” fur the films haying the thickness of Co layer from 1.4 to 1.6 nm was measured to be ranged from 0.004 to 0.021 ${\AA}$$^{-1}$.

• Journal of Sensor Science and Technology
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• v.4 no.1
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• pp.9-14
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• 1995

To fabricate low field magnetic sensors using magnetoresistance(MR) effects, we deposited thin layers of $600{\AA}$ in thickness of Ni-Co(0.7Ni-0.3Co) alloy on slide glasses. In the layers we ordered 4 arms of the fullbridge sensors in the shape of grid structure to be inclined at an angle of $45^{\circ}$ to main axis and made the areal rate increase to 67%. While the response characteristics of the fabricated sensors had good linearity in the magnetic field of ${\pm}0.5mT$ ranges, the white noise was 0.2 nV and the voltage sensitivity was 7.6 $nV/{\mu}T$.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.25 no.8
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• pp.99-105
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• 2011

This paper is about the design of 3-axis magnetic sensor module which detects parking and moving vehicle. For the sensor module, MR Sensor from Honeywell of which maximum measurement range is ${\pm}2$[G] is used. It also consisted of amplifier and sensor filter and fabricated $30{\times}50$[mm] PCB. Fabricated sensor module produced helmholtz coil of which the length is 1.2[m] of 3-axis to know the performance. It installed sensor module at the center and measured the detected magnetic field. In result, 3-axis were detected as 0.2~0.3[mG] and the drift of the fluctuation of magnetic field was stabilized at 0.03[mG] unit. For the performance evaluation of the vehicle detection, after the entry and parking of the vehicle, variation of magnetic field was measured as 0.323~0.695[G] which the average 0.5[G] of the earth magnetic field was the center and the range of variation was confirmed as 0.37[G]. Therefore, the designed magnetic sensor can be used as the vehicle detection sensor module.

• Journal of Magnetics
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• v.5 no.1
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• pp.23-25
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• 2000

We have investigated the effects of Ar and$O_2$-ion milling on the exchange coupling field ($H_{ex}$) and coercive field ($H_c$) at the interfaces between substrates and NiO/NiFe films, to understand the exchange biasing mechanism. The $O_2$-ion milling was successfully performed by means of the electron cyclotron resonance (ECR) process. We found that the local roughness gradient of the NiO surface increased by $O_2$-ion milling. The ratio of $H_{ex}/H_c$ increased from 0.87 to 1.77, whereas $H_c$ decreased by almost a half as a results of the ion milling. The decrease in $H_c$could be interpreted as due to the refinement of magnetic domain size, which arose from the increase of the local roughness gradient of the NiO surface. The decrease in low $H_c$, and increase in $H_{ex}$ in NiO spin valves by ECR-ion milling are in the right direction far use in magnetoresistance (MR) heads.

• Journal of the Korean Magnetics Society
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• v.15 no.4
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• pp.226-230
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• 2005

In this research, magnetic properties and annealing effects of the spin valve structures were investigated, which have Ta underlayer deposited with Ar and $N_2$ gas mixture. Also, TaN underlayer as a diffusion barrier and the substrate were investigated. The structure of the spin valve was Si($SiO_2$)/Ta(TaN)/NiFe/CoFe/Cu/CoFe/FeMn/Ta. Deposition rate was decreased and resistivity and roughness of the TaN films were increased as the $N_2$ gas flow was increased. The XRD results after high temperature annealing showed that Silicides were created in Si/Ta layer, but not in Si/TaN layer. Magnetoresistance ratio (MR) and exchange coupling field ($H_{ex}$) were decreased when the $N_2$ gas flow was increased over 4.0 sccm. The MR of the spin valves with Ta and TaN films deposited with up to 4.0 sccm of $N_2$ gas flow was increased about $0.5\%$ until the annealing temperature of up to $200^{\circ}C$ and then, decreased. TaN film deposited with 8.0 sccm of $N_2$ gas flow showed twice the adhesion of the Ta film. The above results indicate that with 3.0 sccm of $N_2$ gas flow during the Ta underlayer deposition, the magnetic properties of the spin valves are maintained, while the underlayer may be used as a diffusion barrier and the adhesion between the Si substrate and the underlayer is increased.

• Journal of the Korean Magnetics Society
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• v.11 no.3
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• pp.104-108
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• 2001

The effect of specular electron scattering on natural oxidation of free layer in NiO spin valves have been investigated. The magnetoresistance (MR) ratio and the exchange biasing field ( $H_{ex}$) of NiO(600 $\AA$)Ni$_{81}$$Fe_{19}$(50$\AA$)/Co(7 $\AA$)/Cu(20 $\AA$)/Co(7 $\AA$)Ni$_{81}$$Fe_{19}$(70 $\AA$) spin valves were increased from 4.9 % to 7.3 %, and 110 Oe to 170 Oe after natural oxidation in the atmosphere for 80 days, respectively. The sheet resistivity p decreased from 28$\mu$$\Omega$m to 17$\mu$$\Omega$m, but $\Delta$$\rho$ did not almost change after the oxidation. The spin valves enhanced by the specular electron scattering in the natural]y Co/NiFe/NiFe $O_{x}$ free layer were confirmed from the depth profiles using Auger electron spectroscopy.scopy..

• Journal of the Korean Magnetics Society
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• v.11 no.2
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• pp.72-77
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• 2001

Top spin valve films with PtMn antiferromagnetic layers were deposited using a multi-target dc magnetron sputtering in (100)Si substrates overcoated with 500 $\AA$ of Al$_2$O$_3$. Firstly, the post-deposition annealing was performed at 270$\^{C}$ in a unidirectional magnetic field of 3 kOe to induce the crystallographic transformation of the PtMn layer from a fcc (111) to a fct (111) structure. Secondly, the spin valve films were annealed without magnetic fields and magnetic properties were measured. In Si/A1$_2$O$_3$ (500$\AA$)/Ta(50$\AA$)NiFe(40$\AA$)/CoFe(17$\AA$)/Cu(28$\AA$)/CoFe (30$\AA$)PtMn(200$\AA$)Ta(50$\AA$) top spin valve samples, the MR ratio decreased slowly with increasing annealing temperature up to 325$\^{C}$. But above 325$\^{C}$, the MR ratio decreased rapidly to 1%, due to a collapse of the exchange coupling between a antiferromagnetic layer and a pinned layer with increasing annealing temperature. Also above 325$\^{C}$, the exchange biased field rapidly decreased and the interlayer coupling field rapidly increased with increasing annealing temperature. A change in the interlayer coupling field was resulted from the increase in interface roughness due to Mn-interdiffusion through the grain boundaries. We confirmed the temperature in changing magnetic properties agreed well with the blocking temperature of PtMn based spin valve structure.

• Journal of the Korean Magnetics Society
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• v.11 no.5
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• pp.211-216
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• 2001

Top synthetic spin valves wi th structure Ta/NiFe/CoFe/Cu/CoFe(Pl)/Ru/CoFe(P2)/FeMn/Ta on Si (100) substrate with SiO$_2$ of 1500 were prepared by dc magnetron sputtering system. We have changed only the thickness of the free layer and the thickness difference (Pl-P2) in the two ferromagnetic layers separated by Ru, and investigated the effect of magnetic film thickness on the GMR properties and the interlayer coupling field in a spin valve with a synthetic antiferromagnet. As thickness difference of pinned layer was decreased from +25 to -25 , MR ratio was decreased gradually. However, there was a dip zone indicating a big change of MR ratio around Pl = P2, which can be due to the large canting of pinned layers. The modified Neel model was suggested for the top synthetic spin valve to explain the interlayer coupling field according to the thickness change of ferromagnetic layers. The interlayer coupling field was decreased due to the magnetostatic coupling (orange peel coupling) as suggested by model. However, the interlayer coupling field was not explained at the dip zone by the modified Neel model. The deviation of modified Neel model at the dip zone could be due to the largely canting of the pinned layers as well, which depends on different thickness in synthetic antiferromagnetic structure.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.21.2-21.2
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• 2011

$Fe_3O_4$ having half metallic property is one of the efficient spin filtering materials which are widely used in spintronic research field and ZnO is wide band gap semiconductor which can be used by tunnel barrier or semiconductor channel in spin MOSFET. We investigated the magnetic and the electric properties of $Fe_3O_4$/ZnO multilayer fabricated on c-$Al_2O_3$ substrate by pulsed laser deposition (PLD). For multilayer films, PLD was performed at variable temperatures such as $200{\sim}750^{\circ}C$ and at target distance from 40 to 80 mm, KrF eximer laser of 1.5 $J/cm^2$ and a reputation rate of 2Hz. $Fe_3O_4$/ZnO multilayers were deposited at $4{\times}10^{-6}$ Torr. After fabricating $Fe_3O_4$/ZnO multilayers, $Fe_3O_4$/ZnO multilayers were treated by RTA(Rapid Thermal Annealing) at various temperature to change magnetic phase. The magnetism of the multilayer is changed by thickness of the ZnO tunnel barrier. Magnetic phase of FexOy showed a very small magnetism due to $Fe_2O_3$ ${\alpha}$-phase, but large magnetism from $Fe_3O_4$ or $Fe_2O_3$ ${\gamma}$-phase was observed. In the present study, effect of the ZnO thickness on the MR (magnetoresistance) ratio was investigated in detail.

• Proceedings of the Korean Magnestics Society Conference
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• 2009.12a
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• pp.192-192
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• 2009

Magnetic and magnetotransport properties of (1-x) $La_{0.7}Sr_{0.3}MnO_3-xRE_2O_3$ (RE=La, Nd) (x = 0.025, 0.05, 0.075, 0.1, 0.2, 0.3) composite polycrystalline samples were systematically studied. Samples were prepared using conventional solid-state reaction. LSMO and $RE_2O_3$ react at high temperature and become chemically compatible. The ferromagnetic-paramagnetic transition temperatures ($T_c$) of the LSMO-$Nd_2O_3$ composite samples were decreased 313K~349K with increasing x, while the $T_c$ values of the LSMO-$La_2O_3$ composite samples were almost unaltered in the range of 355K~358K, representing that the ferromagnetism of LSMO might be more seriously degraded by Nd substitution on the ($La_{0.7}Sr_{0.3}$) site. However, LSMO-$RE_2O_3$ composite samples exhibit greatly enhanced low field magnetoresistance (LFMR) and dMR/dH value without an appreciable increase in its resistivity. Remarkably improved LFMR properties are attributed to LSMO grain boundaries acting as effective spin-dependent scattering centers. The relationship among the $RE_2O_3$ addition, microstructure, magnetic and magnetotransport properties will be discussed in this paper.