• 한국자기학회:학술대회 개요집
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• 한국자기학회 2002년도 동계연구발표회 논문개요집
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• pp.42-43
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• 2002

Spintronics is a rapidly expanding research area because of recent developments in the physics of spin-dependent phenomena. For use as spintronic materials, dilute magnetic semiconductors (DMS) are of considerable interest as spin injectors for spintronic devices.$^{[1]}$ Many researchers have studied DMS, in which transition metal atoms are introduced into the lattice, thus inserting local magnetic moments into the lattice. (omitted)

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2004년도 동계학술연구발표회 논문개요집
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• pp.41-41
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• 2004

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2007년도 The 1st International Symposium on Advanced Magnetic Materials
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• pp.69.1-69.1
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• 2007

• 한국진공학회:학술대회논문집
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• 한국진공학회 1995년도 제8회 학술발표회 논문개요집
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• pp.97-97
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• 1995

• 전기학회논문지P
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• 제65권2호
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• pp.114-121
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• 2016

This paper is Instant space vector PWM(Pulse Width Modulation)power conversion devices in switching power semiconductors from my generation to losses and switching when the voltage surge and current surge of electronic noise(EMI: Electro Magnetic Interference / RFI: Radio Frequency Interference)to effectively minimize the power soft-switching power conversion circuit topologies of auxiliary resonant DC tank for the purpose of high performance realization of the electric power conversion system by the high-speed switching of a semiconductor device(AQRDCT simultaneously : an active auxiliary resonance using auxiliary Quasi-resonant DC tank)DC link snubber switch has adopted a three-phase voltage inverter. AQRDCL proposed in this paper can reduce the effective and current peak stress of the power semiconductors of the auxiliary resonant snubber circuit compared to the conventional active-resonant DC link snubber, it is not necessary to install the clamp switch of the auxiliary resonant DC link, DC the peak current and power loss of the bus line can be reduced.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.314-314
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• 2012

The dilute magnetic semiconductors (DMS) have been developed to multi-functional electro-magnetic devices. Specially, the Si based DMS formed by ion implantation have strong advantages to improve magnetic properties because of the controllable effects of carrier concentration on ferromagnetism. In this study, we investigated the deep level states of Fe- and Co-ions implanted Si wafer during rapid thermal annealing (RTA) process. The p-type Si (100) wafers with hole concentration of $1{\times}10^{16}cm^{-3}$ were uniformly implanted by Fe and Co ions at a dose of $1{\times}10^{16}cm^{-2}$ with an energy of 60 keV. After RTA process at temperature ranges of $500{\sim}900^{\circ}C$ for 5 min in nitrogen ambient, the Au electrodes with thickness of 100 nm were deposited to fabricate a Schottky contact by thermal evaporator. The surface morphology, the crystal structure, and the defect state for Fe- and Co- ion implanted p-type Si wafers were investigated by an atomic force microscopy, a x-ray diffraction, and a deep level transient spectroscopy, respectively. Finally, we will discuss the physical relationship between the electrical properties and the variation of defect states for Fe- and Co-ions implanted Si wafer after RTA.

• Applied Science and Convergence Technology
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• 제23권1호
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• pp.1-13
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• 2014

Semiconductor quantum structures are often characterized by their energy gaps which are modified by the quantum size effect. Energy levels in semiconductors can be realized by optical transitions within confined structures. Photoluminescence spectroscopy in magnetic fields at low temperatures has proved to be a powerful technique for investigating the electronic states of quantum semiconductor heterostructures and offers a complimentary tool to electrical transport studies. In this review, we examine comprehensive investigations of magneto-excitonic and Landau transitions in a large variety of undoped and doped quantum-well structures. Strong magnetic fields change the diamagnetic energy shift of free excitons from quadratic to linear in B in undoped single quantum well samples. Two-dimensional electron gas induced by modulation doping shows pronounce quantum oscillations in integer quantum Hall regime and discontinuous transition at ${\nu}=1$. Such discontinuous transition can be explained as the formation of spin waves or Skyrmions.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2002년도 동계연구발표회 논문개요집
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• pp.146-147
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• 2002

III-V magnetic semiconductors initiated by GaMnAs growth at low temperatures via molecular beam epitaxy (MBE) has been a hot issue recently for their possible application to spntronics. GaMnN may be one of the candidates for room temperature operating ferromagnetic semiconductors as proposed by a theoretical calculation, However, since GaN was grown at very high temperatures above ∼750$^{\circ}C$ even with MBE, it is expected that the incorporation of Mn into GaN will be limited. (omitted)

• Journal of Magnetics
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• 제15권2호
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• pp.56-60
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• 2010

In this study, we investigated the optical, magnetic, and electrical transport properties of $Si_{1-x}Mn_x$ (0.1 < x < 0.9) single crystals grown by the vertical Bridgman method. The alloys with a Mn concentration of up to 64% demonstrated weak ferromagnetic ordering around $T_C=30\;K$. The $Si_{0.25}Mn_{0.75}$ and $Si_{0.18}Mn_{0.82}$ alloys showed weak ferromagnetic ordering at 70 K and antiferromagnetic ordering at 104 K, as confirmed by magnetization, neutron diffraction, and transport studies.

• 한국소음진동공학회:학술대회논문집
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• 한국소음진동공학회 2007년도 추계학술대회논문집
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• pp.1241-1246
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• 2007

In recent years, the semiconductor industry and the optical industry are developed rapidly. The recent demands have expanded for optical components such as the optical lens, the optical semiconductor and the measuring instrument. Object transport systems are driven typically by the magnetic field and the conveyer belt. Recent industry requires more faster and efficient transport system. However, conventional transport systems are not adequate for transportation of optical elements and semiconductors. The conveyor belts can damage precision optical elements by the contact force and magnetic systems can destroy the inner structure of semiconductor by the magnetic field. In this paper, the levitation transport system using ultrasonic wave is developed for transporting precision elements without damages. The steady state flexural vibration of the beam is expressed using Euler-Bernoulli beam theory. The transport direction of an object is examined according to phase difference and frequency. The theoretical results are verified by experiments.