• Journal of Magnetics
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• 제14권3호
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• pp.104-107
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• 2009

The effects of the magnetic property variation on current-induced magnetization switching in magnetic tunnel junction with perpendicular magnetic anistoropy (PMA) and the soft magnetic polarization-enhancement layers (PELs) inserted between the layers with PMA and the MgO layer was studied. A micromatnetic model was used to estimate the switching time of the free layer by different applied current densities, with changing saturation magnetization ($M_s$) of the PELs, interlayer exchange coupling between PMA layers and PELs. The switching time could be significantly reduced at low current densities, by increasing $M_s$ of PELs and decreasing interlayer exchange coupling.

• Steel and Composite Structures
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• 제26권3호
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• pp.273-287
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• 2018

Buckling and free vibration analysis of sandwich micro plate (SMP) integrated with piezoelectric layers embedded in orthotropic Pasternak are investigated in this paper. The refined Zigzag theory (RZT) is taken into consideration to model the SMP. Four different types of functionally graded (FG) distribution through the thickness of the SMP core layer which is reinforced with single-wall carbon nanotubes (SWCNTs) are considered. The modified couple stress theory (MCST) is employed to capture the effects of small scale effects. The sandwich structure is exposed to a two dimensional magnetic field and also, piezoelectric layers are subjected to external applied voltages. In order to obtain governing equation, energy method as well as Hamilton's principle is applied. Based on an analytical solution the critical buckling loads and natural frequency are obtained. The effects of volume fraction of carbon nanotubes (CNTs), different distributions of CNTs, foundation stiffness parameters, magnetic and electric fields, small scale parameter and the thickness of piezoelectric layers on the both critical buckling loads and natural frequency of the SMP are examined. The obtained results demonstrate that the effects of volume fraction of CNTs play an important role in analyzing buckling and free vibration behavior of the SMP. Furthermore, the effects of magnetic and electric fields are remarkable on the mechanical responses of the system and cannot be neglected.

• 한국자기학회지
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• 제21권4호
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• pp.121-126
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• 2011

자유층과 고정 기준층으로 이루어진 자기 터널 접합의 스핀 동역학을 강자성 공명 시늉내기로 연구 하였다. 먼저 교환 바이어스 인위적 준강자성 기준층을 포함한 자기 터널 접합에서 DC 자기장에 대한 각 층의 자화 방향을 확인하고 터널 자기저항을 계산하였다. 자기 터널 접합에서 스핀의 들뜸 모드들을 확인하기 위해 DC와 RF 자기장을 함께 인가하여 강자성 공명 주파수 스펙트라를 관찰 하였다. 각 층 별로 들뜸 모드들을 확인하여 자유층과 기준층의 자화 방향의 차이로 계산된 터널 자기저항의 들뜸 모드들을 분석 하였다. 전체적으로 스핀의 들뜸 모드는 자유층이나 기준층의 자화 방향에 관련해서 DC 자기장의 음, 양의 방향에 따라 상이하게 나타났다. 음의 방향 자기장에 대해서 자유층과 기준층의 강자성 공명 주파수 스펙트라는 수정된 Kittel 방정식으로 잘 설명되지만 양의 방향 자기장에 대해서는 예측하기 어려운 들뜸 모드들로 인해 분석적 해답을 찾기 어려웠다. 자기터널 접합의 강자성 층들은 서로 상호 작용을 하기 때문에 이에 대한 스핀 동역학 연구는 자유층 뿐만 아니라 기준층, 고정층과도 밀접하게 연관되어 있다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.578-581
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• 1999

The Co-Cr-Ta films are one of the most suitable candidates for perpendicular magnetic recording media. The facing targets sputtering(FTS) system has a advantage of preparing films over a wide range of working gas pressure on plasma-free substrates. In this study, we investigated the effect underlayers on the growths layers of Co-Cr-Ta recording layers. The Co-Cr-Ta/Ti(CoCr) double layers were deposited with sputter gas pressure$(P_N, 0.3-1mTorr)$ by using FTS apparatus at temperature of$40^{\circ}C~-300^{\circ}C$, respectively. Crystallographic and magnetic characteristics were evaluated by x-ray diffractometry(XRD) and vibrating sample magnetometer(VSM), respectively.

• Journal of Magnetics
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• 제2권3호
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• pp.96-100
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• 1997

A spin valve structure of NiO(40 nm)/Co(2 nm)/Cu(2.6 nm)/Co(x nm)/Ta(5 nm) has been investigated for the application of magnetic random access memory (MRAM). The spin valve structure exhibited very large difference in the coercivities between pinned and free layers, a relatively high GMR ratio, and a low free layer coercivity. The spin valves were prepared by sputtering and were characterized by dc 4-point probe, and VSM. The spin valves with combined free layer exhibited a maximun GMR ratio of 10.4% with a free layer coercivity of about 82 Oe. The spin valves with a single 10 nm thick a-CoNbZr free layer exhibited a GMR ratio of about 4.3% with a free layer coercivity of about 12 Oe. The GMR ratio of the spin valves increased by addition of Co between Cu and a-CoNbZr. It has been confirmed that the coercivity of free layer can be decreased by increasing the thickness of a-CoNbZr. It has been confirmed that the coercivity of free layer can be decreased by increasing the thickness of a-CoNbZr layer without losing the GMR ratio substantially, which was mainly due to high resistivity of the amorphous "layers".

• Journal of Magnetics
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• 제6권4호
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• pp.132-141
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• 2001

The switching characteristics and the magnetization-flop behavior in magnetic tunnel junctions exchange biased by synthetic antiferromagnets (SyAFs) are investigated by using a computer simulations based on a single-domain multilayer model. The bias field acting on the free layer is found to be sensitive to the thickness of neighboring layers, and the thickness dependence of the bias field is greater at smaller cell dimensions due to larger magnetostatic interactions. The resistance to magnetization flop increases with decreasing cell size due to increased shape anisotropy. When the cell dimensions are small and the synthetic antiferromagnet is weakly, or not pinned, the magnetization directions of the two layers sandwiching the insulating layer are aligned antiparallel due to a strong magnetostatic interaction, resulting in an abnormal magneto resistance (MR) change from the high-MR state to zero, irrespective of the direction of the free-layer switching. The threshold field for magnetization-flop is found to increase linearly with increasing antiferromagnetic exchange coupling in the synthetic antiferromagnet. Irrespective of the magnetic parameters and cell sizes, magnetization flop does not exist near zero applied field, indicating that magnetization flop is driven by the Zeeman energy.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.233-233
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• 2010

Magnetic random access memory (MRAM), based on magnetic tunnel junction (MTJ) and CMOS, is a prominent candidate among prospective semiconductor memories because it can provide nonvolatility, fast access time, unlimited read/write endurance, low operating voltage and high storage density. The etching of MTJ stack with good properties is one of a key process for the realization of high density MRAM. In order to achieve high quality MTJ stack, the use of CoFeB and IrMn magnetic films as free layers was proposed. In this study, inductively coupled plasma reactive ion etching of CoFeB and IrMn thin films masked with Ti hard mask was investigated in a $Cl_2$/Ar gas mix. The etch rate of CoFeB and IrMn films were examined on varying $Cl_2$ gas concentration. As the $Cl_2$ gas increased, the etch rate monotonously decreased. The effective of etch parameters including coil rf power, dc-bais voltage, and gas pressure on the etch profile of CoFeB and IrMn thin film was explored, At high coil rf power, high dc-bais voltage, low gas pressure, the etching of CoFeB and IrMn displayed better etch profiles. Finally, the clean and vertical etch sidewall of CoFeB and IrMn free layers can be achieved by means of thin Ti hard mask in a $Cl_2$/Ar plasma at the optimized condition.

• Journal of Magnetics
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• 제17권2호
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• pp.73-77
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• 2012

We investigate spin transfer torque (STT) in magnetic multilayer structures using micromagnetic simulations. We implement the STT contribution for magnetic multilayer structures in addition to the Landau-Lifshitz-Gilbert (LLG) micromagnetic simulators. In addition to the Sloncewski STT term, the zero, first, and second order field-like terms are also considered as well as the effects of the Oersted field due to the running current are addressed. We determine the switching current densities of the free layer with the exchange biased synthetic ferrimagnetic reference layers for various cases.

• 한국자기학회지
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• 제11권6호
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• pp.272-277
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• 2001

FeMr에 의해 교환 바이어스된 synthetic antiferromagnet(CoFe/Ru/CoFe)을 가진 Top Ta/NiFe/CoFe/Cu/CoFe/Ru/CoFe/FeMn/Ta 스핀 밸브 구조를 마그네트론 스퍼터링법에 의해 증착하였다. 이러한 스핀 밸브에서는 자유층, 구속층등의 두께 및 조성이 층간 결합력의 세기를 비롯한 자성특성에 영향을 미치게 된다 후방산란법은 두께 및 조성에 대한 절대정량이 가능하며 비파괴 분석법이라는 장점을 지니고 있으나, 원자번호가 20번 이상인 주기율표상의 인접원소로 이루어진 자성박막을 분석하는데 있어서 신호의 중첩현상으로 인해 분석이 불가능하였다 본 연구에서는 element-specific 한 분석기술인 양성자 여기 X선 검출법과, 절대 정량이 가능하고 깊이분해능을 현저히 향상시킨 grazing-exit 후방산란법 (RBS : Rutherford Backscattering Spectrometry)을 동시에 사용하여 상호 보완적인 분석을 함으로써 스핀밸브에 대한 성분 및 두께에 대한 정량분석을 수행하였다. 이를 위하여 먼저 spin valve 구조에서 자성층인 NiFe, CoFe, FeMn 단일층이 증착된 시료에 대한 표준화를 수행함으로써 spin valve 구조에서 grazing-exit 후방산란 스펙트럼 상의 중첩된 신호를 Simulation을 통하여 분리가 가능하였으며, 특히 Ru층의 두께는 단위의 정확도로 측정이 가능 하였다

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2003년도 somma/kms meeting
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• pp.217-217
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• 2003