• Journal of Magnetics
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• v.14 no.3
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• pp.104-107
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• 2009

The effects of the magnetic property variation on current-induced magnetization switching in magnetic tunnel junction with perpendicular magnetic anistoropy (PMA) and the soft magnetic polarization-enhancement layers (PELs) inserted between the layers with PMA and the MgO layer was studied. A micromatnetic model was used to estimate the switching time of the free layer by different applied current densities, with changing saturation magnetization ($M_s$) of the PELs, interlayer exchange coupling between PMA layers and PELs. The switching time could be significantly reduced at low current densities, by increasing $M_s$ of PELs and decreasing interlayer exchange coupling.

• Steel and Composite Structures
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• v.26 no.3
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• pp.273-287
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• 2018

Buckling and free vibration analysis of sandwich micro plate (SMP) integrated with piezoelectric layers embedded in orthotropic Pasternak are investigated in this paper. The refined Zigzag theory (RZT) is taken into consideration to model the SMP. Four different types of functionally graded (FG) distribution through the thickness of the SMP core layer which is reinforced with single-wall carbon nanotubes (SWCNTs) are considered. The modified couple stress theory (MCST) is employed to capture the effects of small scale effects. The sandwich structure is exposed to a two dimensional magnetic field and also, piezoelectric layers are subjected to external applied voltages. In order to obtain governing equation, energy method as well as Hamilton's principle is applied. Based on an analytical solution the critical buckling loads and natural frequency are obtained. The effects of volume fraction of carbon nanotubes (CNTs), different distributions of CNTs, foundation stiffness parameters, magnetic and electric fields, small scale parameter and the thickness of piezoelectric layers on the both critical buckling loads and natural frequency of the SMP are examined. The obtained results demonstrate that the effects of volume fraction of CNTs play an important role in analyzing buckling and free vibration behavior of the SMP. Furthermore, the effects of magnetic and electric fields are remarkable on the mechanical responses of the system and cannot be neglected.

• Journal of the Korean Magnetics Society
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• v.21 no.4
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• pp.121-126
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• 2011

Spin dynamics of magnetic tunnel junctions with free and fixed reference layers is investigated by ferromagnetic resonance micromagnetic simulations. First, in magnetic tunnel junctions with an exchange biased synthetic ferrimagnetic reference layer, a magnetization direction of each layer and the tunneling magnetoresistance are calculated for a DC magnetic field. To investigate the spin exciting modes in magnetic tunnel junctions, we simulate the ferromagnetic resonance frequency spectra with small RF magnetic fields. Exciting modes of the tunneling magnetoresistance calculated by an included angle between free and reference layers is interpreted from those of each layer. Spin exciting modes are different according to a signs of the DC magnetic field. In a negative magnetic field, FMR frequency spectra of free and reference layers are well elucidated by the modified Kittel's equation. However, in a positive magnetic field, there is no simple analytic solution related to FMR frequency spectra due to the coupled modes. Since ferromagnetic layers in magnetic tunnel junctions are interactive each other, careful considerations of the reference and fixed layer as well as the free layer are required for understanding on the spin dynamics of magnetic tunnel junctions with an exchange biased synthetic ferrimagnetic reference layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.578-581
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• 1999

The Co-Cr-Ta films are one of the most suitable candidates for perpendicular magnetic recording media. The facing targets sputtering(FTS) system has a advantage of preparing films over a wide range of working gas pressure on plasma-free substrates. In this study, we investigated the effect underlayers on the growths layers of Co-Cr-Ta recording layers. The Co-Cr-Ta/Ti(CoCr) double layers were deposited with sputter gas pressure$(P_N, 0.3-1mTorr)$ by using FTS apparatus at temperature of$40^{\circ}C~-300^{\circ}C$, respectively. Crystallographic and magnetic characteristics were evaluated by x-ray diffractometry(XRD) and vibrating sample magnetometer(VSM), respectively.

• Journal of Magnetics
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• v.2 no.3
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• pp.96-100
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• 1997

A spin valve structure of NiO(40 nm)/Co(2 nm)/Cu(2.6 nm)/Co(x nm)/Ta(5 nm) has been investigated for the application of magnetic random access memory (MRAM). The spin valve structure exhibited very large difference in the coercivities between pinned and free layers, a relatively high GMR ratio, and a low free layer coercivity. The spin valves were prepared by sputtering and were characterized by dc 4-point probe, and VSM. The spin valves with combined free layer exhibited a maximun GMR ratio of 10.4% with a free layer coercivity of about 82 Oe. The spin valves with a single 10 nm thick a-CoNbZr free layer exhibited a GMR ratio of about 4.3% with a free layer coercivity of about 12 Oe. The GMR ratio of the spin valves increased by addition of Co between Cu and a-CoNbZr. It has been confirmed that the coercivity of free layer can be decreased by increasing the thickness of a-CoNbZr. It has been confirmed that the coercivity of free layer can be decreased by increasing the thickness of a-CoNbZr layer without losing the GMR ratio substantially, which was mainly due to high resistivity of the amorphous "layers".

• Journal of Magnetics
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• v.6 no.4
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• pp.132-141
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• 2001

The switching characteristics and the magnetization-flop behavior in magnetic tunnel junctions exchange biased by synthetic antiferromagnets (SyAFs) are investigated by using a computer simulations based on a single-domain multilayer model. The bias field acting on the free layer is found to be sensitive to the thickness of neighboring layers, and the thickness dependence of the bias field is greater at smaller cell dimensions due to larger magnetostatic interactions. The resistance to magnetization flop increases with decreasing cell size due to increased shape anisotropy. When the cell dimensions are small and the synthetic antiferromagnet is weakly, or not pinned, the magnetization directions of the two layers sandwiching the insulating layer are aligned antiparallel due to a strong magnetostatic interaction, resulting in an abnormal magneto resistance (MR) change from the high-MR state to zero, irrespective of the direction of the free-layer switching. The threshold field for magnetization-flop is found to increase linearly with increasing antiferromagnetic exchange coupling in the synthetic antiferromagnet. Irrespective of the magnetic parameters and cell sizes, magnetization flop does not exist near zero applied field, indicating that magnetization flop is driven by the Zeeman energy.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.233-233
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• 2010

Magnetic random access memory (MRAM), based on magnetic tunnel junction (MTJ) and CMOS, is a prominent candidate among prospective semiconductor memories because it can provide nonvolatility, fast access time, unlimited read/write endurance, low operating voltage and high storage density. The etching of MTJ stack with good properties is one of a key process for the realization of high density MRAM. In order to achieve high quality MTJ stack, the use of CoFeB and IrMn magnetic films as free layers was proposed. In this study, inductively coupled plasma reactive ion etching of CoFeB and IrMn thin films masked with Ti hard mask was investigated in a $Cl_2$/Ar gas mix. The etch rate of CoFeB and IrMn films were examined on varying $Cl_2$ gas concentration. As the $Cl_2$ gas increased, the etch rate monotonously decreased. The effective of etch parameters including coil rf power, dc-bais voltage, and gas pressure on the etch profile of CoFeB and IrMn thin film was explored, At high coil rf power, high dc-bais voltage, low gas pressure, the etching of CoFeB and IrMn displayed better etch profiles. Finally, the clean and vertical etch sidewall of CoFeB and IrMn free layers can be achieved by means of thin Ti hard mask in a $Cl_2$/Ar plasma at the optimized condition.

• Journal of Magnetics
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• v.17 no.2
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• pp.73-77
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• 2012

We investigate spin transfer torque (STT) in magnetic multilayer structures using micromagnetic simulations. We implement the STT contribution for magnetic multilayer structures in addition to the Landau-Lifshitz-Gilbert (LLG) micromagnetic simulators. In addition to the Sloncewski STT term, the zero, first, and second order field-like terms are also considered as well as the effects of the Oersted field due to the running current are addressed. We determine the switching current densities of the free layer with the exchange biased synthetic ferrimagnetic reference layers for various cases.

• Journal of the Korean Magnetics Society
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• v.11 no.6
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• pp.272-277
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• 2001

A spin valve structure of Ta/NiFe/CoFe/Cu/CoFe/Ru/CoFe/FeMn/Ta which has a synthetic antiferromagnet (CoFe/Ru/CoFe), was fabricated by using a magnetron sputtering system. The thickness and composition of magnetic free and pinned layers affect the magnetic properties such as exchange interaction strength of each layer and so on. Even though Rutherford Backscattering Spectrometry (RBS) has advantages of quantitative and non-destructive analysis, it is almost impossible to determine the thickness and composition of magnetic thin films using lBS because of its poor mass resolution for a higher atom number (Z>20). In this study, quantitative analysis of the element composition and thickness for the spin valve sample was performed by combining both Proton Induced X-ray Emission Spectrometry (PIXE), which is one of element specific analysis techniques, and grazing-exit RBS with a highly improved depth resolution and absolute quantitative analysis. For the quantitative analysis, standardization of PIXE was carried out with NiFe, CoFe, and FeMn layers, which are one of constituent layers of spin valve films. Through PIXE standardization and the aid of PHE experimental results of the spin valve sample, ire overlapped signal in a grazing-exit RBS spectrum were successfully resolved and the thickness of the Ru layer was determined with a resolution of ∼1 .

• Proceedings of the Korean Magnestics Society Conference
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• 2003.12a
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• pp.217-217
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• 2003