• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.11a
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• pp.86-89
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• 1994

This paper describes the fabrication and basic characteristics of a Si Hall device fabricated on a SOI(Si-on-insulator) structure. In which SOI structure was formed by SOB(Si-wafer direct bonding) technology and the insulator of the SOI structure was used as the dielectrical isolation layer of a Hall device. The Hall voltage and sensitivity of the implemented SDB SOI Hall devices showed good linearity with respectivity to the applied magnetic flux density and supple iud current. The product sensitivity of the SDB SOI Hall device was average 670 V/A$.$T and its value has been increased up to 3 times compared to that of bulk Si with buried layer of 10$\mu\textrm{m}$. Moreover, this device can be used at high-temperature, high-radiation and in corrosive environments.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.12 no.10
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• pp.1890-1896
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• 2008

In this paper, the Si vertical Hall devices ale fabricated by using standard bipolar process and investigated in terms of the opeating and noise properties. The sensitivity of device with P+ isolation dam(type B) has been increased up to about 1.2 times compared to that device without the dam also noise has been increased. With the condition of f=I[KHz], band-width 1[Hz], the resolution of magnetic-field detection were about $0.97[{\mu}T]$/ type B and $1.25[{\mu}T]$/ type A, respectively, thus we must consider correlation the low noise or good resolution and high sensitivity in the situation for device geometry design or even for the materials.