• Proceedings of the Korean Magnestics Society Conference
• /
• 한국자기학회 2000년도 International Symposium on Magnetics The 2000 Fall Conference
• /
• pp.337-345
• /
• 2000

The spontaneous Hall effect in amorphous Tb-Fe and Sm-Fe thin films, which possess excellent magnetic softness, is investigated in this work to seek a possibility of practical applications of these thin films as sensors. The resistivity of Tb-Fe thin films ranges from 180 to 250 Ωcm as the Tb content varies from 35 to 46 at. %. Tb-Fe thin films show negative Hall resistivity ranging from - 7.3 to - 5.0 Ωcm in the same composition range, giving the normalized resistivity ratio in the range of -4.1 to -2.0 %. On the other hand, the resistivity of Sm-Fe thin films ranges from 150 to 166 Ωcm as the Sm content varies from 22 to 31 at. %. Sm-Fe thin films show positive Hall resistivity which varies from 7.1 to 2.8 Ωcm in the same composition range, giving the normalized resistivity ratio in the range of 4.8 to 1.7 %. These values are significantly high compared with the values of other R-T alloys, Tb-Co alloys for example, where the highest reported value is 2.5 %. Between the two different sets of samples, Tb-Fe thin films with perpendicular anisotropy are considered to be more suitable for practical applications, since saturation is reached at a los magnetic field, approximately 2 kOe in a Tb$\sub$35.1/ Fe$\sub$64.9/ thin film, for example.

• Journal of Magnetics
• /
• 제4권1호
• /
• pp.33-37
• /
• 1999

Unidirectional magnetic anisotropy field ($H_an$) was investigated for thin films of $CdCr{2-2x}In_{2X}Se_4 (0$\leq$x$\leq$0.2). This anisotropy originates from the microscopic anisotropic Dzyaloshinskii-Moriya (DM) interaction which arise from the spin-orbit scattering of the conduction electrons by the nonmagnetic impurities. This interaction maintains the remanent magnetization in the direction of the initial applied field. Then the single easy direction of the magnetization is parallel to the direction of the magnetic field. The anisotropy produced by field cooling is unidirectional I.e. the spins system deeps some memory of the cooling field direction. The chalcogenide spinel of$ CdCr_{2-2x}In){2X}Se_4$belongs to the class of the magnetic semiconductors. The magnetic disordered state is obtained when ferromagnetic structure is diluted by In. Then we have the mixed phase characterised by coexistence the magnetic long range ordering (IFN-infinite ferromagnetic network) and the spin glass order (Fc-finite clusters). The total magnetic anisotropy energy depends on the state of magnetic ordering. In our study we concentrated on the magnetic state with reentrant transition and spin glass state. The polycrystalline $ CdCr_{2-2x}In){2X}Se_4$ thin films were obtained by rf sputtering technique. We applied the ferromagnetic resonance (FMR) and M-H loop techniques for determining the temperature composition dependencies of Han. From the experimental data, we have found that Han decreases almost linearly when temperature is increased and in the low temperature is about three times bigger at SG state with comparison to the state with REE.

• Journal of the Korean Ceramic Society
• /
• 제45권9호
• /
• pp.556-560
• /
• 2008

The effects of Nb and Co ion substitution on the dielectric and magnetic properties of the multiferroic $BiFeO_3$ thin films have been investigated. Heteroepitaxial $BiFeO_3$ thin films were deposited by Pulsed Laser Deposition method. Nb substitution decreased the leakage current by 6 orders of magnitude and Co substituted $BiFeO_3$ thin films showed an enhanced magnetization, 2 times larger than that of un-substituted $BiFeO_3$. Through the co-substitution of Co and Nb, $BiFeO_3$ thin films with a low leakage current and an enhanced magnetization could be obtained.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
• /
• pp.29-29
• /
• 2008

Platinum Thin films were deposited on $Al_2O_3$ by Rf magnetic Sputtering. The physical and electrical characteristics of these films were analyzed under various deposition conditions(Ar gas pressure, input power, substrate temperature.) and annealing condition. The deposition rate was increased with increasing the input power but not increased linear. In the other factor, The Pt thin films property was associated with resistance. so lower resistance had more and more good Pt thin films condition. For the purpose of this study, we will get the best Pt thin film characteristics.

• Journal of the Korean Magnetics Society
• /
• 제5권5호
• /
• pp.618-622
• /
• 1995

We studied the effects of Pt and Cr addition in a new Co-Cr-P-Pt alloy system with the coercivity higher than 2000 Oe even when they were deposited without substrate heating and bias voltage. The coercivity of the films increased from 1000 to 2000 Oe or higher by addition of 12 at.%Pt. The variation of the anisotropy field with increasing Pt content was similar to that of the coercivity. This indicate that the increase of the coercivity might be associated with increase of the anisotropy field with Pt addition. With the addition of Cr, the coercivity of the films increased up to 8 at.%Cr and the coercive squareness of the films decreased. The angular variation of coercivity deviated at a lower angle from domain wall motion mode as the Cr content increases. From these result, it is believed that the grain isolation of the films is enhanced with the addition of Cr.

• Journal of the Korean Magnetics Society
• /
• 제5권5호
• /
• pp.623-626
• /
• 1995

High coercivity thin $Fe_{3}O_{4}$ and ${\gamma}-Fe_{2}O_{3}$ films were deposited on Si substrate under well controlled $O_{2}$ partial pressure by dcreactive magnetron sputtering. The coercivity of as-deposited maggnetite films is below 640 Oe. After cxidizing at $360^{\circ}C$ for 10 minutes, the films transform to maghemite ${\gamma}-Fe_{2}O_{3}$ completely, and the coercivity increases greatly to 2100~4120 Oe, depending on modification of not with minor addition of Co or/and Mn. The orign of coercivity enhancement is attributed mainly to magnetic anisotropy arisen from interfacial stress. The addition of 5 at% Co and 5 at% Mn greatly enhances coercivity and squareness ratio. These films are potential for ultra-high density recording applications.

• Journal of the Korean Magnetics Society
• /
• 제5권5호
• /
• pp.702-709
• /
• 1995

In this paper we review recent work in our laboratory on nanocomposite CoSm-based films including CoSm with Cr underlayer (CoSm//Cr), exchange-coupled magnetic films consisting of CoSm and FeCo layers (CoSm/FeCo), and CoSm multilayers with nonmagnetic spacing layers of SmO (CoSm/SmO). The emphasis is on detailed investigations of microstructure and magnetic properties for CoSm//Cr films, exchange-spring effects for CoSm/FeCo films, and interlayer effects for (CoSm/ SmO) multilayers.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
• /
• 한국초전도저온공학회 2002년도 학술대회 논문집
• /
• pp.365-367
• /
• 2002

A serious problem in using YBCO films for fault current limiter is inhomogeneities caused by imperpect manufacturing. So simultaneous quenches are a difficult problem which elements for current limiting are connected in series for increasing voltage ratings. We investigated extended electric field - current characteristics for current limiting element of YBCO film when 0-130mT magnetic field is applied. And quench characteristics were investigated in over all element and between elements of YBCO films. From the experiments, it was shown that applied magnetic fields using solenoid coil induced uniform quench distribution for over all stripes and simultaneous quench in all elements for current limiting of YBCO film was realized.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
• /
• pp.578-581
• /
• 1999

The Co-Cr-Ta films are one of the most suitable candidates for perpendicular magnetic recording media. The facing targets sputtering(FTS) system has a advantage of preparing films over a wide range of working gas pressure on plasma-free substrates. In this study, we investigated the effect underlayers on the growths layers of Co-Cr-Ta recording layers. The Co-Cr-Ta/Ti(CoCr) double layers were deposited with sputter gas pressure$(P_N, 0.3-1mTorr)$ by using FTS apparatus at temperature of$40^{\circ}C~-300^{\circ}C$, respectively. Crystallographic and magnetic characteristics were evaluated by x-ray diffractometry(XRD) and vibrating sample magnetometer(VSM), respectively.

• Proceedings of the KIEE Conference
• /
• 대한전기학회 2000년도 하계학술대회 논문집 C
• /
• pp.1717-1719
• /
• 2000

DLC films are deposited by using an FCVA deposition system with a mirror-type magnetic field configuration. Permanent magnets and: magnetic yokes around the cathode have been observed to enhance the mobility of arc spots on the cathode and the stability of arc plasma, Effects of reactor pressures and substrate biases on structural properties of DLC films deposited are investigated. The results show that the highest $sp^{3}/sp^{2}$ fraction is obtained when the films are deposited at a pressure of $3{\times}10^4$ Torr and a bias voltage of - 50 V. The variation of the structural properties due to thermal stress up to 500$^{\circ}C$ is also examined.