• Title/Summary/Keyword: magnetic anisotropy

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Study on Basic Magnetic Characteristics in New Magnetic Materials(2) - Magnetic Properties of Amorphous $Fe_{80}B_{15}Si_{5}$ alloy Measures with Pulse Method (새 자성재료의 기초자기특성 연구(2) - 펄스측정법에 의한 비정질 $Fe_{80}B_{15}Si_{5}$ 합금의 자기특성)

  • 이용호;신용돌;김인수;이연숙;노태환;강일구
    • Journal of the Korean Magnetics Society
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    • v.1 no.2
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    • pp.42-48
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    • 1991
  • The basic soft magnetic characteristics of a typical Fe based amorphous $Fe_{80}B_{15}Si_{5}$ alloy were measured with pulse metheod. Quantitative relations between magnetostriction, anisotropy energy, reluctivity were investigated. The relative contribution factor of magnetostrictive and uniaxial anisotropy energy to the reluctivity were calculated. The internal stress and induced anisotropy were estimated. A tension applied to the long axis of the sample greatly enhanced induced anisotropy.

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FeCoB Films with Large Saturation Magnetization and High Magnetic Anisotropy Field to Attain High Ferromagnetic Resonance Frequency

  • Nakagawa, Shigeki;Hirata, Ken-Ichiro
    • Journal of Magnetics
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    • v.18 no.2
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    • pp.155-158
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    • 2013
  • FeCoB films were being prepared on a Ru underlayer by using the oblique incidence of sputtered and back-scattered particles which have a high in-plane magnetic anisotropy field $H_k$ above 400 Oe. It is suitable to attain such deposition condition when facing targets sputtering system. The in-plane X-ray diffraction analysis clarified that there is anisotropic residual stress which is the origin of the high in-plane magnetic anisotropy. The directional crystalline alignment and inclination of crystallite growth were also observed. Such anisotropic crystalline structures may affect the anisotropic residual stress in the films. The B content of 5.6 at.% was appropriate to induce such anisotropic residual stress and $H_k$ of 410 Oe in this experiment. The film with B content of 6 at.% possessed large saturation magnetization of 22 kG and high $H_k$ of 500 Oe. The film exhibited high ferromagnetic resonance frequency of 9.2 GHz.

Magnetic Semiconductors Thin Films-Unidirectional Anisotropy

  • Lubecka, M.;Maksymowicz, L.J.;Szymczak, R.;Powroznik, W.
    • Journal of Magnetics
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    • v.4 no.1
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    • pp.33-37
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    • 1999
  • Unidirectional magnetic anisotropy field ($H_an$) was investigated for thin films of $CdCr{2-2x}In_{2X}Se_4 (0$\leq$x$\leq$0.2). This anisotropy originates from the microscopic anisotropic Dzyaloshinskii-Moriya (DM) interaction which arise from the spin-orbit scattering of the conduction electrons by the nonmagnetic impurities. This interaction maintains the remanent magnetization in the direction of the initial applied field. Then the single easy direction of the magnetization is parallel to the direction of the magnetic field. The anisotropy produced by field cooling is unidirectional I.e. the spins system deeps some memory of the cooling field direction. The chalcogenide spinel of$ CdCr_{2-2x}In){2X}Se_4$belongs to the class of the magnetic semiconductors. The magnetic disordered state is obtained when ferromagnetic structure is diluted by In. Then we have the mixed phase characterised by coexistence the magnetic long range ordering (IFN-infinite ferromagnetic network) and the spin glass order (Fc-finite clusters). The total magnetic anisotropy energy depends on the state of magnetic ordering. In our study we concentrated on the magnetic state with reentrant transition and spin glass state. The polycrystalline $ CdCr_{2-2x}In){2X}Se_4$ thin films were obtained by rf sputtering technique. We applied the ferromagnetic resonance (FMR) and M-H loop techniques for determining the temperature composition dependencies of Han. From the experimental data, we have found that Han decreases almost linearly when temperature is increased and in the low temperature is about three times bigger at SG state with comparison to the state with REE.

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Shape anisotropy and magnetic properties of Co/Ni anti-dot arrays

  • Deshpande, N.G.;Seo, M.S.;Kim, J.M.;Lee, S.J.;Lee, Y.P.;Rhee, J.Y.;Kim, K.W.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.444-444
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    • 2011
  • Recently, patterned magnetic films and elements attract a wide interest due to their technological potentials in ultrahigh-density magnetic recording and spintronic devices. Among those patterned magnetic structures, magnetic anti-dot patterning induces a strong shape anisotropy in the film, which can control the magnetic properties such as coercivity, permeability, magnetization reversal process, and magneto-resistance. While majority of the previous works have been concentrated on anti-dot arrays with a single magnetic layer, there has been little work on multilayered anti-dot arrays. In this work, we report on study of the magnetic properties of bilayered anti-dot system consisting of upper perforated Co layer of 40 nm and lower continuous Ni layer of 5 nm thick, fabricated by photolithography and wet-etching processes. The magnetic hysteresis (M-H) loops were measured with a superconducting-quantum-interference-device (SQUID) magnetometer (Quantum Design: MPMS). For comparison, investigations on continuous Co thin film and single-layer Co anti-dot arrays were also performed. The magnetic-domain configuration has been measured by using a magnetic force microscope (PSIA: XE-100) equipped with magnetic tips (Nanosensors). An external electromagnet was employed while obtaining the MFM images. The MFM images revealed well-defined periodic domain networks which arise owing to the anisotropies such as magnetic uniaxial anisotropy, configurational anisotropy, etc. The inclusion of holes in a uniform magnetic film and the insertion of a uniform thin Ni layer, drastically affected the coercivity as compared with single Co anti-dot array, without severely affecting the saturation magnetization ($M_s$). The observed changes in the magnetic properties are closely related to the patterning that hinders the domain-wall motion as well as to the magneto-anisotropic bilayer structure.

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Influence of Working Pressure on The Magnetic Properties of Tb(Fe0.55Co0.45)1.5 Thin Films

  • Tu, Le Tuan;Duc, Nguyen Huu;Jeong, Jong-Ryul;Kim, Cheol-Gi
    • Journal of Magnetics
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    • v.13 no.4
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    • pp.160-162
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    • 2008
  • In this work the magnetic anisotropies of magnetostriction material $Tb(Fe_{0.55}Co_{0.45})_{1.5}$ (named a-TerfecoHan) films were investigated with respect to working pressures in the range 1-7 mTorr. The results obtained show that perpendicular magnetic anisotropy (PMA) can be obtained at a working pressure above 5.1 mTorr. XRD was utilized to clarify the origin of the PMA observed in $Tb(Fe_{0.55}Co_{0.45})_{1.5}$ films, and revealed that all samples were amorphous. Therefore, we propose that the PMA effect is explained by stress produced in film due to internal relaxation process and magnetic anisotropy enhancements caused by magnetoelastic interactions.

Current-Driven Domain-Wall Depinning in Pt/CoFe/Pt Nanowires with Perpendicular Magnetic Anisotropy

  • Kim, Kab-Jin;Lee, Jae-Chul;Choe, Sug-Bong
    • Journal of Magnetics
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    • v.14 no.3
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    • pp.101-103
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    • 2009
  • The spin transfer torque efficiency was determined experimentally by observing the current-driven domainwall depinning of Pt/CoFe/Pt nanowires with perpendicular magnetic anisotropy. The depinning time was exponentially proportional to the applied magnetic field, and was well explained by the Neel-Brown formula. The depinning time and threshold magnetic field were varied considerably by injecting current into the nanowire. The spin transfer torque efficiency was estimated to be $(7.2{\pm}0.9){\times}10^{-15}Tm^2$/A from the linear dependence of the threshold current density with respect to the applied magnetic field.

Permeability of CoZrNb film with thickness (CoZrNb막의 두께에 따른 투자율의 변화)

  • Hoe, J.;Kim, Y.H.;Shin, K.H.;Sa-Gong, G.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.07a
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    • pp.443-446
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    • 2001
  • MI(Magneto-Impedance) sensor which is made by thin films has significantly high detecting sensitivity in weak magnetic field. It also has a merit to be able to build in low power system. Its structure is simple, which makes it easier to prepare a miniature. In this study, its magnetic permeability and anisotropy field(H$\sub$k/) as a function of a thickness of sputtered amorphous CoZrNb thin film with high saturation magnetostriction and excellent soft magnetic property are investigated. In order to make a uniaxial anisotropy, thin film was subjected to post annealing with a static magnetic field with 1KOe intensity at 250, 300, and 320$^{\circ}C$ for 2 hour. Anisotropy field(H$\sub$k/)of thin film is measured by using MH loop tracer. Its magnetic permeability of thin film is measured over the frequency range from 1 MHz to 750MHz. It has shown that the magnetic permeability of amorphous CoZrNb thin film is decreased due to the skin effect with increasing a thickness of CoZrNb thin film, and hence its driving frequency is lowered.

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Impedance of CoZrNb Film as a Function of Frequency (CoZrNb막의 주파수에 따른 임피던스의 변화)

  • Hur, J.;Kim, Y.H.;Shin, K.H.;Park, K.I.;SaGong, G.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.07b
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    • pp.778-781
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    • 2002
  • MI(Magneto-Impedance) sensor which is made by thin films has significantly high detecting sensitivity in weak magnetic field. It also has a merit to be able to build in the low power system. Its structure is simple, which makes it easier to prepare a miniature. In this study, its magnetic permeability and anisotropy field$(H_k)$ as a function of a thickness of sputtered amorphous CoZrNb films with zero-magnetostriction and excellent soft magnetic property are investigated. In order to make a uniaxial anisotropy, film was subjected to the post annealing in a static magnetic field with 1KOe intensity at 250, 300, and $320^{\circ}C}$ respectively for 2 hours. Anisotropy field$(H_k)$ of film is measured by using a MH loop tracer. Its magnetic permeability of a film is measured over the frequency range from 1 MHz to 750MHz. It has shown that the magnetic permeability of amorphous CoZrNb film is decreased due to the skin effect with increasing a thickness of the CoZrNb film, and hence its driving frequency is lowered. And, it was examined on the permeability and impedance to fabricate the MI sensor which acts at a low frequency by thickening a CoZrNb film relatively.

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Study on the Magnetic Characteristics of Anisotropic SmCo7-type Alloys Synthesized by High-energy Surfactant-assisted Ball Milling

  • Yu, N.J.;Zhang, P.Y.;Shi, Y.J.;Pan, M.X.;Zhang, S.Y.;Ge, H.L.;Lu, Y.C.
    • Journal of Magnetics
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    • v.19 no.4
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    • pp.340-344
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    • 2014
  • An effective process was employed for synthesizing anisotropic magnetic $SmCo_7$-type alloy flakes with high coercivity, which is highly desirable for many applications. The highest coercivity of 16.3 kOe corresponds to a typical flake thickness of 200 nm for the 3-h ball-milled sample. The anisotropy field was calculated by measuring the parallel and perpendicular directions to the easy magnetization direction of the powders. The anisotropy field decreased with the increase of the ball milling time, thus indicating that the decrease of coercivity was mainly caused by the reduction of the anisotropy field. Microstructure analysis indicated that the morphology, grain size, and anisotropy field of these samples have a great influence on the magnetic properties.

Composition Dependence of Perpendicular Magnetic Anisotropy in Ta/CoxFe80-xB20/MgO/Ta (x=0, 10, 60) Multilayers

  • Lam, D.D.;Bonell, F.;Miwa, S.;Shiota, Y.;Yakushiji, K.;Kubota, H.;Nozaki, T.;Fukushima, A.;Yuasa, S.;Suzuki, Y.
    • Journal of Magnetics
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    • v.18 no.1
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    • pp.5-8
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    • 2013
  • The perpendicular magnetic anisotropy of sputtered CoFeB thin films covered by MgO was investigated by vibrating sample magnetometry. Three different $Co_xFe_{80-x}B_{20}$ alloys were studied. Under out-of plane magnetic field, the saturation field was found to increase with increasing the Co content. The magnetization and interface anisotropy energy were obtained for all samples. Both showed a marked dependence on the MgO overlayer thickness. In addition, their variations were found to be non-monotonous as a function of the Co concentration.