• The Korean Journal of Pharmacology
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• v.31 no.2
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• pp.241-250
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• 1995

Protein B23 is one of the major nucleolar phosphoproteins associated with pre-ribosomal particles, and is localized in the granular region of the nucleolus. Recent studies suggest that protein B23 shuttles between nucleus and cytoplasm and also interacts with HIV Rev. These findings indicate that protein B23 is important in nucleocytoplasmic relationship and viral replication. However, the exact function of protein B23 is not clear yet. In acute nucleolar hypertrophy of rat liver, treated with thioacetamide, there was observed an increase of not only protein B23 but also B23-like protein p45 when anti-B23 monoclonal antibody (MAb) was used for identification. On the basis of the large B23 specific epitope structure composed of 68 amino acids, a hypothesis was formulated to examine that p45 is the pre-B23 resulting from excessive production of B23. In an attempt to investigate the precursor of B23, we analyzed the subcellular fractions and microsomal subfractions. Subsequently, we analyzed the finger printings of B23-like proteins using the tryptic peptide mapping. The results are summarized: 1) Using B23 MAb, we observed the presence of B23-like proteins in nucleolar fraction, nucleoplasmic fraction and microsomal fraction. 2) In the further microsomal subfractionation, we could partially purify B23-like protein in 2M layer of sucrose gradient. 3) When ion exchange chromatography was employed, there were protein species 80kDa(p80), 65kDa(p65) and 60kDa(p60). 4) Based on the tryptic map analysis of $^{125}I$ labeled proteins, the similarity between B23 and p80 was found only in 9 out of 14(B23) and 21(p80) peptides, and difference was found in the remaining peptides. p80 and p60 had 18 common peptides, and all the peptides of p60 were similar to those of p80. From these results, it is proposed that p45 is an abnormal metabolite resulting from carcinogenesis by thioacetamide, and it is not the precursor of B23. In addition, we suggest that p80 may be a precursor of p45.

• Restorative Dentistry and Endodontics
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• v.20 no.2
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• pp.432-461
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• 1995

The basic principles in the design of Class II amalgam cavity preparations have been modified but not changed in essence over the last 90 years. The early essential principle was "extension for prevention". Most of the modifications have served to reduce the extent of preparation and, thus, increase the conservation of sound tooth structure. A more recent concept relating to conservative Class II cavity preparations involves elimination of occlusal preparation if no carious lesion exists in this area. To evaluate the ideal ClassII cavity preparation design, if carious lesion exists only in the interproximal area, three cavity design conditions were studied: Rodda's conventional cavity, simple proximal box cavity and proximal box cavity with retention grooves. In this study, MO amalgam cavity was prepared on maxillary first premolar. Three dimensional finite element models were made by serial photographic method. Linear, eight and six-nodal, isoparametric brick elements were used for the three dimensional finite element model. The periodontal ligament and alveolar bone surrounding the tooth were excluded in these models. Three types model(B option, Gap option and R option model) were developed. B option model was assumed perfect bonding between the restoration and cavty wall. Gap option model(Gap distance: $2{\mu}m$) was assumed the possibility of play at the interface simulated the lack of real bonding between the amalgam and cavity wall (enamel and dentin). R option model was assumed non-connection between the restoration and cavty wall. A load of 500N was applied vertically at the first node from the lingual slope of the buccal cusp tip. This study analysed the displacement, 1 and 2 direction normal stress and strain with FEM software ABAQUS Version 5.2 and hardware IRIS 4D/310 VGX Work-station. The results were as followed. 1. Rodda's cavity form model showed greater amount of displacement with other two models. 2. The stress and strain were increased on the distal marginal ridge and buccopulpal line angle in Rodda's cavity form model. 3. The stress and strain were increased on the central groove and a part of distal marginal ridge in simple proximal box model and proximal box model with retention grooves. 4. With Gap option, Rodda's cavity form model showed the greatest amount of the stress on distal marginal ridge followed by proximal box model with retention grooves and simple proximal box model in descending order. 5. With Gap option, simple proximal box model showed greater amount of stress on the central groove with proximal box model with retention grooves. 6. Retention grooves in the proximal box played the role of supporting the restorations opposing to loads.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.16 no.9
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• pp.6221-6226
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• 2015

In this paper, waveguide analysis was interpreted as an optical waveguide using the feedback perturbation method simple and easy to apply compared to the analysis method, while the other almost identical to the numerical calculation method. In addition, efficient coupling with an optical transmission line of optical fiber and the waveguide form the thin film of different functional elements is required in order to achieve the full optical communication system. However, problems arise, such as the light field (field) and the decrease of the access efficiency due to inconsistency in the distribution characteristics of the connection surface by the difference in size of the cross section thereof when connecting the optical fiber and the waveguide directly to the combination of a thin film. Therefore propose a new type of connector structure to increase the efficiency of the connection when connecting the optical fiber waveguide and the thin film was analyzed by applying a coupled mode theory, the binding efficiency of the modified contactor. And by diffusing Ti on the $LiNbO_3$ substrate and a wide range of applications in the manufacture of integrated optical material made of a current low-loss Ti: $LiNbO_3$ optical waveguide and making the Y-branch waveguide, and the properties were confirmed.

• Journal of the Korean institute of surface engineering
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• v.49 no.2
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• pp.166-171
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• 2016

Cathodic protection is widely recognized as the most cost effective and technically appropriate corrosion prevention methodology for the port, offshore structures, ships. When applying the cathodic protection method to metal facilities in seawater, on the surface of the metal facilities a compound of calcium carbonate($CaCO_3$) or magnesium hydroxide($Mg(OH)_2$) films are formed by $Ca^{2+}$ and $Mg^{2+}$ ions among the many ionic components dissolving in the seawater. And calcareous deposit films such as $CaCO_3$ and $Mg(OH)_2$ etc. are formed by the surface of the steel product. These calcareous deposit film functions as a barrier against the corrosive environment, leading to a decrease in current demand. On the other hand, the general calcareous deposit film is a compound like ceramics. Therefore, there may be some problems such as weaker adhesive power and the longer time of film formation uniting with the base metal. In this study, we tried to determine and control the optimal condition through applying the principle of cathodic current process to form calcareous deposit film of uniform and compact on steel plate. The quantity of precipitates was analyzed, and both the morphology, component and crystal structure were analyzed as well through SEM, EDS and XRD. And based on the previous analysis, it was elucidated mechanism of calcareous deposit film formed in the sacrificial anode type (Al, Zn) and current density (1, 3, $5A/m^2$) conditions. In addition, the taping test was performed to evaluate the adhesion.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.5 no.4
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• pp.777-790
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• 2001

Theoretical analyses have been tried to design high power and stable operating SLD at 1.55${\mu}{\textrm}{m}$ wavelength range which is the lowest absorption wavelength in optical fiber. The materials of active layer and SCH layer were chosen as conventional In1-xGaxAsyPl-y quaternary composition systems. From the transverse mode and the lateral mode analyses of waveguide, the optical power distributions and the optical confinement factor have been studied for single-mode high power operation. According to these analyses, it was calculated the composition and the thickness of SCH layer to obtain the maximum optical confinement factor. In order to obtain low values of the reflectivity, we used the window region and the lateral tilted angle between tile active region and window region. And the reflectivity of SLD was calculated with the gaussian beam approximation and mode analysis. From these researches, it was confirmed for several results to fabricate the efficient and stable SLD. In case of using $1.3\mum$, InGaAsP SCH layer, the layer thickness was obtained $0.08\mum$, to get the maximum optical confinement factor. Using $0.2\mum$, active layer thickness and $0.08\mum$, SCH layer thickness, the window region length is about $100\mum$ without An coating, $10\mum$ in 1% AR coating to obtain about 10-4 reflectivity. When the tilted angle is about $10~15^{\circ}$, the reflectivity is about 10-3. From these results, if the window region length and tilted angle were controlled appropriately in given device structure, it was confirmed that it is possible to fabricate the stable SLD without AR coating analytically.

• Journal of the Korean institute of surface engineering
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• v.34 no.2
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• pp.105-114
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• 2001

$Al_2$$O_3$ coatings were deposited on M2 high speed steels by the plasma enhanced chemical vapor deposition (PECVD) process, using a gas mixture of AlC1$_3$, $H_2$, $CO_2$ and Ar $Al_2$$O_3$ coatings had interference color and showed amorphous phase. $A1_2$X$A1_3$/($Ti_{0.5}$ /$Al_{0.5}$ )N double layer coatings were produced in the sequence of substrate $NH_3$ plasma pretreatment, ($Ti_{0.5}$$Al_{0.5}$)N depoition process, $Al_2$$O_3$ deposition process. $Al_2$ $O_3$/( $Ti_{0.5}$A $l_{0.5}$)N double layer coatings showed NaCl structure in ( $Ti_{0.5}$A $l_{0.5}$)N layer and amorphous phase in A1$_2$ $O_3$ layer. It was shown that $Al_2$ $O_3$ columns continuously grew onto ( $Ti_{0.5}$A $l_{0.5}$)N columns. ( $Ti_{0.5}$A $l_{0.5}$)N single coating and $Al_2$ $O_3$/( $Ti_{0.5}$A $l_{0.5}$)N double layer coating were oxidized at $700^{\circ}C$, 80$0^{\circ}C$, 90$0^{\circ}C$ for 1hr, 3hr in atmosphere. At 80$0^{\circ}C$, single layer coatings were oxidized, which were examined substrate oxide particle. But $Al_2$ $O_3$/ ( $Ti_{0.5}$A $l_{0.5}$)N double layer coatings maintained the asdeposited state. Therefore, $Al_2$ $O_3$/ ( $Ti_{0.5}$A $l_{0.5}$)N double layer coatings have moreexcellent oxidation resistance than ( $Ti_{0.5}$A $l_{0.5}$)N single layer coatings.X> 0.5/)N single layer coatings.s.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.08a
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• pp.84-91
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• 2002

The stochiometric composition of $AgGaS_2$/GaAs polycrystal source materials for the $AgGaS_2$/GaAs epilayer was prepared from horizontal furnace. From the extrapolation method of X-ray diffraction patterns it was found that the polycrystal $AgGaS_2$/GaAs has tetragonal structure of which lattice constant an and Co were 5.756 $\AA$ and 10.305 $\AA$, respectively. $AgGaS_2$/GaAs epilayer was deposited on throughly etched GaAs(100) substrate from mixed crystal $AgGaS_2$/GaAs by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $590^{\circ}C$ and $440^{\circ}C$ respectively. The crystallinity of the grown $AgGaS_2$/GaAs epilayer was investigated by the DCRC (double crystal X-ray diffraction rocking curve). The optical energy gaps were found to be 2.61 eV for $AgGaS_2$/GaAs epilayer at room temperature. The temperature dependence of the photocurrent peak energy is well explained by the Varshni equation, then the constants in the Varshni equation are given by $\alpha=8.695{\times}10^{-4}$ eV/K, and $\beta=332K$. From the photocurrent spectra by illumination of polarized light of the $AgGaS_2$/GaAs epilayer, we have found that crystal field splitting ${\Delta}Cr$ was 0.28 eV at 20 K. From the PL spectra at 20 K, the peaks corresponding to free and bound excitons and a broad emission band due to D-A pairs are identified. The binding energy of the free excitons are determined to be 0.2676 eV and 0.2430 eV and the dissociation energy of the bound excitons to be 0.4695 eV.

• Land and Housing Review
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• v.4 no.2
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• pp.167-176
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• 2013

The City Complex Development and TOD originated from the Compact City are entrenched domestically. The New Urban Development such as these changes Structure of Urban space from the Automobile to the Public Transportation. Also, Transit-Oriented Development is drawing attention as sustainability because it has effects of Environment as Green growth. However, An empirical Study is insufficient about Influence Factors of Transit Oriented Development. Therefore This study sets up the Density spaced 1000m apart of Transit Oriented than the existing and did 7 Types considered of Accessibility, Complexity and Design Element according to the Factorial analysis. As a result, this study drew that (1) 'intraregional accessibility of public transit', (2) 'degree of development', 'pedestrian-friendly facility', (3) 'interzonal accessibility of public transit', (4) 'land-use of the city centre', 'complex using of rail station area', 'complementary public transit' are related 201 in number of the Subway stations according to the Multi-dimensional scaling.

• Journal of Sericultural and Entomological Science
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• v.49 no.1
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• pp.8-13
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• 2007

Natural indigo colorants were prepared by extraction of Polygonum tinctorium which was harvested just in the blooming season(in the late of July). The components were analyzed by TLC and HPLC, and its structures were analyzed by FT-IR, EI-mass. The results obtained are summarized as follows; The natural indigo powder was dissolved in DMSO and developed in eluent, $CHCI_3/CH_3CN$(8.5:1.5 v/v) by means of TLC for its quality analysis. It was segregated into indirubin as a red colour and indigo as a blue colour. In case of HPLC analysis,. FT-IR spectrum of indirubin showed a peak for NH residue between 3200 and $3300cm^{-1}$. $^1H-NMR$ spectrum for indigo displayed AA'BB' spin system caused by indole structure between 6.5 and 7.7ppm of H4, 5, 6 and 7, and -NH proton for indirubin showed an singlet between 10.88 and 11.0ppm. EI-mass spectrum of indigo and indirubin both disclosed their molecular size as 262 and it implies that these two substances are isomer.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.220-220
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• 2013

Surface-normal transmission electro-absorption modulator (EAM) are attractive for high-definition (HD) three-dimensional (3D) imaging application due to its features such as small system volume and simple epitaxial structure [1,2]. However, EAM in order to be used for HD 3D imaging system requires uniform modulation performance over large area. To achieve highly uniform modulation performance of EAM at the operating wavelength of 850 nm, it is extremely important to remove the GaAs substrate over large area since GaAs material has high absorption coefficient below 870 nm which corresponds to band-edge energy of GaAs (1.424 eV). In this study, we propose and experimentally demonstrate a transmission EAM in which highly selective backside etching methods which include lapping, dry etching and wet etching is carried out to remove the GaAs substrate for achieving highly uniform modulation performance. First, lapping process on GaAs substrate was carried out for different lapping speeds (5 rpm, 7 rpm, 10 rpm) and the thickness was measured over different areas of surface. For a lapping speed of 5 rpm, a highly uniform surface over a large area ($2{\times}1\;mm^2$) was obtained. Second, optimization of inductive coupled plasma-reactive ion etching (ICP-RIE) was carried out to achieve anisotropy and high etch rate. The dry etching carried out using a gas mixture of SiCl4 and Ar, each having a flow rate of 10 sccm and 40 sccm, respectively with an RF power of 50 W, ICP power of 400 W and chamber pressure of 2 mTorr was the optimum etching condition. Last, the rest of GaAs substrate was successfully removed by highly selective backside wet etching with pH adjusted solution of citric acid and hydrogen peroxide. Citric acid/hydrogen peroxide etching solution having a volume ratio of 5:1 was the best etching condition which provides not only high selectivity of 235:1 between GaAs and AlAs but also good etching profile [3]. The fabricated transmission EAM array have an amplitude modulation of more than 50% at the bias voltage of -9 V and maintains high uniformity of >90% over large area ($2{\times}1\;mm^2$). These results show that the fabricated transmission EAM with substrate removed is an excellent candidate to be used as an optical shutter for HD 3D imaging application.