• Transactions on Electrical and Electronic Materials
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• 제9권1호
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• pp.20-23
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• 2008

Organic light-emitting diodes (OLEDs) are attractive because of possible application in display with low-operating voltage, low-power consumption, self-emission and capability of multicolor emission by the selection of emissive materials. To investigated the optical effects, we studied the electrical and optical characteristics due to thickness variation of electron injection materials LiF on organic light-emitting diodes in the ITO (indium-tin-oxide)/N,N'-diphenyl-N, N'-bis(3-methyphenyl)-1,1'-biphenyl-4,4'-diamine(TPD)/tris(8-hydroxyquinoline) aluminum $(Alq_3)/LiF$ layer/Al device. We maintained the thicknesses of TPD and $Alq_3$ layers at 40 nm and 60 nm, respectively. The deposition rates of TPD and $Alq_3$ were in the $1.5{\AA}/s$ under a base pressure of $5{\times}10^{-6}$ Torr. It was found that luminance and luminous efficiency of the device with 0.7 nm LiF layer improve 25 times and 7 times than the device without the LiF layer, respectively.

• 전기학회논문지
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• 제57권5호
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• pp.833-838
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• 2008

Generally Lighting system consists of lamp and luminaire. When a fluorescent lamp is installed in luminaire, power and light output is changed by ambient temperature. Particularly electrodeless lamp depends on the changes that are mercury pressure with amalgam temperature and magnetic properties with ferrite temperature. It has finally influence on optical efficiency. In this study, the temperature change of ferrite and cold spot, vessel are measured at transitional state and then same characteristics are measured with increase of ambient temperature. At transitional state, luminous flux is related to temperature change of cold spot that compare with behavior of mercury pressure and light output. At increase of ambient temperature, we analyzed change that efficiency and electrical, optical characteristics of elecrodeless lamp are related to ferrite core and cold spot temperature. Additionally, spectrum, color temperature and coordination are measured to check that is relation with ambient temperature.

• 한국생산제조학회지
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• 제24권1호
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• pp.49-55
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• 2015

This paper reports solution-processed, high-efficiency organic light-emitting diodes (OLEDs) fabricated by a knife coating method under ambient air conditions. In addition, indium tin oxide (ITO), traditionally used as the anode, was substituted by optimizing the conductivity enhancement treatment of poly(3,4-ethylene dioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) films on a polyethylene terephthalate (PET) substrate. The transmittance and sheet resistance of the optimized PEDOT:PSS anode were 83.4% and $27.8{\Omega}/sq$., respectively. The root mean square surface roughness of the PEDOT:PSS anode, measured by atomic force microscopy, was only 2.95 nm. The optimized OLED device showed a maximum current efficiency and maximum luminous density of 5.44 cd/A and $8,356cd/m^2$, respectively. As a result, the OLEDs created using the PEDOT:PSS anode possessed highly comparable characteristics to those created using ITO anodes.

• 설비공학논문집
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• 제23권3호
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• pp.188-193
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• 2011

For a long time work or study, pendent task lighting system prepared with phosphor luminescent film LED was developed for eye protection and working efficiency improvement. Developed lighting system was used together with pendent and ambient lighting. Such as, we made comfortable lighting environment system. Evaluation for developed lighting system, that had proceeded to Mock-up test and subjective evaluation. Also It had proceeded that lighting environment analyzed and compatibility valuation of installation. In subjective evaluation, the students have expressed themselves satisfied to phosphor luminescent film LED lighting system. In Mock-up test, It is not problem to intensity of illumination, luminance and color temperature. Therefore, developed LED lighting system was installed at the Daegu apartment. It is having a P.O.E study progress to phosphor luminescent film LED lighting system.

• Bulletin of the Korean Chemical Society
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• 제34권1호
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• pp.107-111
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• 2013

A new green-emitting material with donor-acceptor architecture, 3,7-bis(1'-phenylbenzimidazole-2'-yl)-10-phenylphenothiazine (BBPP) was synthesized and its thermal, optical, and electroluminescent characteristics were investigated. Organic light-emitting diodes (OLEDs) with four different multilayer structures were prepared using BBPP as an emitting layer. The optimized device with the structure of [ITO/2-TNATA (40 nm)/BBPP (30 nm)/TPBi (30 nm)/Alq3 (10 nm)/LiF (1 nm)/Al (100 nm)] exhibited efficient green emission. Enhanced charge carrier balance and electron mobility in the organic layers enabled the device to demonstrate a maximum luminance of 31,300 cd/$m^2$, a luminous efficiency of 6.83 cd/A, and an external quantum efficiency of 1.62% with the CIE 1931 chromaticity coordinates of (0.21, 0.53) at a current density of 100 mA/$cm^2$.

• 정보저장시스템학회논문집
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• 제9권1호
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• pp.10-16
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• 2013

Through the rapid development of LED TV, a large-area edge-lit backlight unit is widely researched in the display industry for enhancing the optical efficiency, luminous uniformity and slim design. In addition, an edge-lit backlight unit includes many optical sheets such as reflection sheet, prism sheet and diffuser sheet. However the function can be replaced by the carefully patterned light guide plate (LGP). Micro patterns which located on the top and bottom surface of light guide plate was designed by ray-tracing optical simulation. The designed patterns improved the light characteristics of LGP, including optical extraction efficiency and intensity distribution uniformity. These results suggest that it is very effective method to design edge-lit LGP with micro-patterns on both sides for large-area display and to reduce the fabrication cost.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.449-449
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• 2007

OLED has many advantages of low voltage operation, self radiation, light weight, thin thickness, wide view angle and fast response time to overcome existing liquid crystal display (LCD)'s weakness. Therefore, It draws attention as promising display and has already developed for manufactured goods. Also, OLED is regarded as a only substitute of flexible display with a thin display. A considerable portion of the light originating film emissive centers buried in a solid film never escapes due to internal reflection at the air-film interface and is scattered as edge emission or dissipated within the solid film This is one of the major reasons why the luminous power efficiency of OLED remains low, in spite of research progress in OLED. Although several ways of overcoming this difficulty have been reported, no comprehensive method has been proposed yet. In this paper, we propose that use of anti-reflective coating layers.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.64-65
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• 2007

High-efficiency white organic light-emitting diodes (WOLEDs) were fabricated with two emissive layers and exciton blocking layer was sandwiched between two phosphorescent dyes which were, bis(3,5-Difluoro-2-(2-pyridyl)phenyl-(2-carboxypyridyl) iridium III (Flrpic) as blue emission and a newly synthesized red phosphorescent material guest, Bis(5-benzoyl-2-phenylpyridinato-C,N)iridium(III) (acetylacetonate) ((Bzppy)2Ir(III)acac). This exciton blocking layer prevents a triple-triple energy transfer between the two phosphorescent emissive layers with balanced emission of blue and red. The white device showed the Commission Internationale d'Eclairage (CIEx,y) coordinates of (0.34, 0.40) at the maximum luminance of $24100\;cd/m^2$ and maximum luminous efficiency of 22.4 cd/A, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.447-450
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• 2003

In this paper, new luminescent material, 6,11-dihydoxy-5,12-naphtacene-dione Alq3 complex (Alq2-Ncd), 1,4-dihydoxy-5,8-naphtaquinone Alq3 complex(Alq2-Nq) was synthesized. And extended efforts had been made to obtain high-performance electroluminescent(EL) devices, since the first report of organic light-emitting diodes(OLEDS) based on tris-(8-hydroxyquinoline) aluminum(Alq3). We have performed investigate characterization of the materials. Current-voltage characteristics, luminance-voltage characteristics and luminous efficiency were measured by Flat Panel Display Analysis System(Model 200-AT) at room temperature. An intensive research is going on to improve the device efficiency using the hole injection layer, different electrodes, and etc. By using the hole injection layer, the charge-injection can be controlled and the stability could be improved. This study indicates not only the sterical effect but also some other effects would be responsible for the change of the emission wavelength.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.51-51
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• 2010

Group III-nitride semiconductors have been widely studied as the materials for growth of light emitting devices. Currently, GaN devices are predominantly grown in the (0001) c-plane orientation. However, in case of using polar substrate, an important physical problem of nitride semiconductors with the wurtzite crystal structure is their spontaneous electrical polarization. An alternative method of reducing polarization effects is to grow on non-polar planes or semi-polar planes. However, non-polar and semipolar GaN grown onto r-plane and m-plane sapphire, respectively, basically have numerous defects density compared with c-plane GaN. The purpose of our work is to reduce these defects in non-polar and semi-polar GaN and to fabricate high efficiency LED on non/semi-polar substrate. Non-polar and semi-polar GaN layers were grown onto patterned sapphire substrates (PSS) and nano-porous GaN/sapphire substrates, respectively. Using PSS with the hemispherical patterns, we could achieve high luminous intensity. In case of semi-polar GaN, photo-enhanced electrochemical etching (PEC) was applied to make porous GaN substrates, and semi-polar GaN was grown onto nano-porous substrates. Our results showed the improvement of device characteristics as well as micro-structural and optical properties of non-polar and semi-polar GaN. Patterning and nano-porous etching technologies will be promising for the fabrication of high efficiency non-polar and semi-polar InGaN LED on sapphire substrate.