• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.3
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• pp.252-256
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• 2009

We have developed low driving voltage white organic light emitting diode with a new electron transport material, triphenylphosphine oxide ($Ph_{3}PO$). The white light emission was realized with a rubrene yellow dopant and blue-emitting DPVBi layer. The new electron transport layer results in a very high current density at low voltage, resulting in a reduction of driving voltage. The device with a new electron transport layer shows a brightness of $1150\;cd/m^2$ at a low driving voltage of 4.3 V.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.461-464
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• 2008

We have developed low voltage driving red phosphorescent organic light-emitting devices using a new electron transport layer. $Ir(piq)_3$ and CBP were used as a phosphorescent dopant and an emission host, respectively. The device exhibits a luminance of $1000\;cd/m^2$ at a voltage of 2.8 V. This high luminance at low voltage results from a high electron conduction behavior of the new electron transport layer.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.679-682
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• 2007

We have developed low voltage operating OLEDs with new electron transport layer. The device having a structure of ITO/2TNATA/HTL:Rubrene(1%)/HTL /new ETL/LiF/Al have been used. The voltage for achieving $1,000\;cd/m^2$ was 4.1 V, whereas the turn on voltage for the brightness of $1\;cd/m^2$ was 2.8 V. This high luminance at low operating voltage is caused by the high current density, resulting from high electron conduction property of the new electron transport layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.100-101
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• 2008

We have developed low voltage driving white organic light emitting diode with new electron transport layer. The with light emission was realized with a yellow dopant, rubrene and blue-emitting DPVBi layer. The new electron transport layer results in very high current density at low voltage, causing a reduction of driving voltage. The device with new electron transport layer shows a brightness of 1000 cd/m2 at 4.3 V.

• Applied Microscopy
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• v.42 no.3
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• pp.158-163
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• 2012

Detailed comparison of low-voltage scanning electron microscopy and electron holography techniques for two-dimensional (2D) dopant profiling was carried out with using the same multilayered p-n junction specimen. The dopant profiles obtained from two methods are in good agreement with each other. It demonstrates that reliability of dopant profile measurement can be increased through precise comparison of 2D profiles obtained from various microscopic techniques.

• Applied Science and Convergence Technology
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• v.26 no.6
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• pp.201-207
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• 2017

An electron-excited temperature ($T_{ex}$) is not determined by the Boltzmann plots only with the spectral data of $4p{\rightarrow}4s$ in an Ar-plasma jet operated with a low frequency of several tens of kHz and the low voltage of a few kV, while $T_{ex}$ can be obtained at least with the presence of a high energy-level transition ($5p{\rightarrow}4s$) in the high-voltage operation of 8 kV. The optical intensities of most spectra that are measured according to the voltage and the measuring position of the plasma column increase or decay exponentially at the same rate as that of the intensity variation; therefore, the excitation temperature is estimated by comparing the relative optical-intensity to that of a high voltage. In the low-voltage range of an Ar-jet operation, the electron-excitation temperature is estimated as being from 0.61 eV to 0.67 eV, and the corresponding radical density of the Ar-4p state is in the order of $10^{10}{\sim}10^{11}cm^{-3}$. The variation of the excitation temperature is almost linear in relation to the operation voltage and the position of the plasma plume, meaning that the variation rates of the electron-excitation temperature are 0.03 eV/kV for the voltage and 0.075 eV/cm along the plasma plume.

• Korean Journal of Materials Research
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• v.11 no.9
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• pp.759-762
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• 2001

Mg$_2$SnO$_4$having an inverse spinel structure was selected as a new host material of $Mn^{2+}$ activator. The luminescence of the $Mg_2$SnO$_4$:Mn phosphor prepared by the solid-state reaction were investigated under ultraviolet and low-voltage electron excitation. The Mn-doped magnesium tin oxide exhibited strong green emission with the spectrum centered at 500nm wavelength. It was explained that the green emission in $Mg_2$SnO$_4$:Mn phosphor is due to energy transfer from $^4T_1to ^6A_1\;of\; Mn^{2+}$ ion at tetrahedral site in the spinel structure. The optimum concentration of $Mn^{2+}$/ion exhibiting maximum emission intensity by the low-voltage electron excitation was 0.6mol%. ？

• Journal of Welding and Joining
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• v.15 no.3
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• pp.79-87
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• 1997

This study was performed to evaluate basic characteristics of electron beam welding process for a 9% Ni steel plate. The principal welding process parameters, such as working distance, accelerating voltage, beam current and welding speed were investigated. The AB (Arata Beam) test method was also applied to characterize beam size and energy density of the electron beam welding process. The electron beam size was found to decrease with the increase of accelerating voltage and the decrease of working distance. So, in case of high voltage (150kV), spot size and energy density of electron beam were revealed to be 0.9mm and $6.5\times10^5W/\textrm{cm}^2$ respectively. The accelerating voltage among the welding parameters was found to be the most important factor governing the penetration depth. When the accelerating voltage of electron beam was low ($\leq$90kV), beam current and welding speed did not affect on the penetration depth significantly. However, in case of high voltage ($\geq$120kV), the depth of penetration increased very sensitively with the increase of beam current and the decrease of welding speed.

• Nuclear Engineering and Technology
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• v.51 no.3
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• pp.731-737
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• 2019

In this study, a new measurement method based on voltage transients in CdZnTe detectors response to low energy photon irradiations is applied to measure the electron mobility (${\mu}_e$) and electron mobility-lifetime product $({\mu}{\tau})_e$ in a CdZnTe detector. In the proposed method, the pulse rise times are derived from low energy photon response to 59.5 keV($^{241}Am$), 88 keV($^{109}Cd$) and 122 keV($^{57}Co$) ${\gamma}-rays$ for the irradiation of the cathode surface at each detector for different bias voltages. The electron $({\mu}{\tau})_e$ product was then determined by measuring the variation in the photopeak amplitude as a function of bias voltage at a given photon energy using a pulse-height analyzer. The $({\mu}{\tau})_e$ values were found to be $(9.6{\pm}1.4){\times}10^{-3}cm^2V^{-1}$ for $1000mm^3$, $(8.4{\pm}1.6){\times}10^{-3}cm^2V^{-1}$ for $1687.5mm^3$ and $(7.6{\pm}1.1){\times}10^{-3}cm^2V^{-1}$ for $2250mm^3$ CdZnTe detectors. Those results were then compared with the literature $({\mu}{\tau})_e$ values for CdZnTe detectors. The present results indicate that, the electron mobility ${\mu}_e$ and electron $({\mu}{\tau})_e$ values in CdZnTe detectors can be measured easily by applying voltage transients response to low energy photons, utilizing a fast signal acquisition and data reduction and evaluation.

• Journal of Electrical Engineering and Technology
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• v.10 no.4
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• pp.1746-1751
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• 2015

In this study low voltage Plasma Electrolytic Oxidation (PEO) was utilized to eliminate high voltage PEO drawbacks such as high cost, dimensional deformation and porosity. Low voltage PEO produces a thin coating which causes low corrosion resistance. In order to solve such problem, 0.1~0.6M pyrophosphates were added in a bath containing 1.4M NaOH, and 0.35M Na₂SiO₃. 70 V PEO was conducted at 25℃ for 3 minutes. Chemical composition, morphology and corrosion resistance of the anodized coating were analyzed. The anodized film was composed of MgO, Mg₂SiO₄, and Mg₂O₇P₂. The morphology of film showed appropriately dense structure and low porosity in the anodized layers. It is found that low voltage Plasma Electrolytic Oxidation in cooperation with phosphating treatment can provide a good corrosion protection for the AZ31B magnesium alloy.