• Nuclear Engineering and Technology
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• 제54권7호
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• pp.2376-2385
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• 2022

Two groups of oxide dispersion-strengthened reduced-activation ferritic/martensitic steels (A and B) were prepared by adding Y, Ti, and Zr into steels through vacuum induction melting to investigate the inclusions, microstructures, mechanical properties of the alloys. Results showed that particles with Y, Ti, and Zr easily formed. Massive, Zr-rich inclusions were found in B steel. Density of micron inclusions in A steel was 1.42 × 10¹⁴ m^-3, and density of nanoparticles was 3.61 × 10¹⁶ m^-3. More and finer MX carbides were found in steel tempered at 650 ℃, and yield strengths (YS) of A and B steel were 714±2 and 664±3.5 MPa. Thermomechanical processing (TMP) retained many dislocations, which improved the mechanical properties. YSs of A and B treated by TMP were 725±3 and 683±4 MPa. The existence of massive Zr-rich inclusions in B steels interrupted the continuity of the matrix and produced microcracks (fracture), which caused a reduction in mechanical properties. The presence of fine prior austenite grain size and inclusions was attributed to the low DBTTs of the A steels; DBTTs of A650 and A700 alloy were -79 and -65 ℃. Tempering temperature reduction and TMP are simple, readily useable methods that can lead to a superior balance of strength and impact toughness in industry applications.

• Journal of Electrochemical Science and Technology
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• 제13권3호
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• pp.390-397
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• 2022

The use of microwaves as the energy source for synthesis and sintering of ceramics offers substantial advantages compared to conventional gas-fired and electric resistance furnaces. Benefits include much shorter processing times and reaching the sintering temperature more quickly, resulting in superior final product quality. Most oxide ceramics poorly interact with microwave irradiation at low temperatures; thus, a more complex setup including a susceptor is needed, which makes the whole process very complicated. This investigation pursued a new approach, which enabled us to use microwave irradiation directly in poorly coupled oxides. In many solid-state electrochemical devices, the support is either metal or can be reduced to metal. Metal powders in the support can act as an internal susceptor and heat the entire cell. Then sufficient interaction of microwave irradiation and ceramic material can occur as the sample temperature increases. This microwave heating and exothermic reaction of oxidation of the support can sinter the ceramic very efficiently without any external susceptor. In this study, yttria stabilized zirconia (YSZ) and a Ni-YSZ cermet support were used as an example. The cermet was used as the support, and a YSZ electrolyte was coated and sintered directly using microwave irradiation without the use of any susceptor. The results were compared to a similar cell prepared using a conventional electric furnace. The leakage test and full cell power measurement results revealed a fully leak-free electrolyte. Scanning electron microscopy and density measurements show that microwave sintered samples have lower open porosity in the electrode support than conventional heat treatment. This technique offers an efficient way to directly use microwave irradiation to sinter thin film ceramics without a susceptor.

• 센서학회지
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• 제31권5호
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• pp.343-347
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• 2022

Recently, the problem of global warming caused by greenhouse gases is getting serious due to the development of industry and the increase in transportation means. Accordingly, the need for a technology to reduce carbon dioxide, which accounts for most of the greenhouse gas, is increasing. Among them, a catalyst for converting carbon dioxide into fuel is being actively studied. Catalysts for reducing carbon dioxide are classified into thermal catalysts and photocatalysts. In particular, the photocatalyst has the advantage that carbon dioxide can be reduced only by irradiating ultraviolet rays at room temperature without high temperature or additional gas. TiO₂ is widely used as a photocatalyst because it is non-toxic and has high stability, but has a disadvantage of low carbon dioxide reduction efficiency. To increase the reduction efficiency, 1-propanol was used in the synthesis process. This prevents agglomeration of the catalyst and increases the specific surface area and pores of TiO₂, thereby increasing the surface area in contact with carbon dioxide. As a result of measuring the CO₂ reduction efficiency, it was confirmed that the efficiency of TiO₂ with 1-propanol and TiO₂ without 1-propanol was 19% and 12.3%, respectively, and the former showed a 1.5 times improved efficiency.

• 한국산학기술학회논문지
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• 제21권8호
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• pp.401-406
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• 2020

자동차에서 배출되는 배기가스 중 질소산화물은 요사이 문제가 되는 미세먼지의 주요 요인 중 하나이다. 질소산화물(NOx)은 고온 조건에서 연소가 진행될 때 발생하므로 연소시 온도를 낮추는 방법으로 발생을 억제하고 있다. 자동차에서는 일반적으로 배기가스 재순환(EGR)을 사용하여 연소 온도를 낮추는 방법으로 감소시킨다. 그러나 EGR 비율이 높아질수록 NOx의 양은 저감되나 연소 안정성의 하락으로 인한 불완전연소 가능성의 증가로 일산화탄소와 미연탄화수소의 양이 증가하여 오히려 오염물질이 증가하는 문제를 발생시킬 수 있다. 여기에서는 연료 입자에 음파를 조사하여 연료 입자의 운동성을 향상시켜 연소가 원활히 진행되게 하여 연소의 안정성을 향상시키는 방안에 대하여 해석적 및 실험적 방법으로 연구하였다. 해석적 방법으로는 유동해석 소프트웨어를 사용하여 연료 입자에 다양한 주파수의 음파를 조사하여 연료 입자의 움직임 변화에 대한 연구를 진행하였다. 해석 결과, 작은 연료 입자의 조건에서는 고주파의 음파에 의해 영향을 많이 받고, 연료 입자가 큰 조건에서는 저주파의 음파에 의해 영향을 많이 받아 운동성이 증가함을 알 수 있었다. 실험적 방법으로는 연소실을 구성하여 정해진 당량비 조건에서 연소시키며 다양한 주파수의 음파를 조사하며 연소실내 압력을 측정하는 연구를 진행하였다. 측정된 압력으로부터 열방출량을 계산하면 연소의 진행 상황에 대한 정보를 얻을 수 있는데, 실험 결과 초기 연소시 상대적 저주파 조사 조건에서 열방출량이 증가한 것을 확인할 수 있었다.

• 한국세라믹학회지
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• 제39권4호
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• pp.386-393
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• 2002

본 연구는 티탄산칼륨 섬유(K2O·$nTiO_2$)를 제조한 후, 도전율이 우수한 Sb-doped $SnO_2$(ATO: Antimony Tin Oxide)를 티탄산 칼륨 섬유에 코팅하는 기술을 개발하는데 목적이 있다. 티탄산칼륨 섬유는 서냉 소성법으로 제조하였으며 섬유의 평균 길이는 $15{\mu}m$, 평균 직경은 $0.5{\mu}m$이었다. ATO를 졸-겔법, 공침법, 균일침전법등 세가지 방법으로 티탄산칼륨 섬유에 코팅 하였으며 ATO 코팅된 티탄산칼륨 섬유는 ATO 함량(5∼70 wt%), Sb 함량(0∼20 wt%), 온도($450∼800^{\circ}C$), 수세 여부 및 회수(3∼4회) 등을 변화 시키며 비저항 변화를 관찰하였다. 공침법의 경우 ATO 함량이 30wt%에서 103${\Omega}$·cm 낮은 비저항을 나타내었으며, 그 이상의 함량에서는 거의 일정한 값($60{\Omega}{\cdot}cm∼90{\Omega}{\cdot}$cm)을 보였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.5-5
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• 2009

Thin-film-transistors (TFTs) that can be prepared at low temperatures have attracted much attention because of the great potential for transparent and flexible electronics. One of the mainstreams in this field is the use of organic semiconductors such as pentacene. But device performance of the organic TFTs is still limited due to low field-effect mobility and rapid degradation after exposing to air. Alternative approach is the use of amorphous oxide semiconductors as a channel. Amorphous oxide semiconductors (AOSs) based TFTs showed the fast technological development, because AOS films can be fabricated at room temperature and exhibit the possibility in application like flexible display, electronic paper, and larges solar cells. Among the various AOSs, a-IGZO has lots of advantages because it has high channel mobility, uniform surface roughness and good transparency. [1] The high mobility is attributed to the overlap of spherical s-orbital of the heavy post-transition metal cations. This study demonstrated the effect of the variation in channel thickness from 30nm to 200nm on the TFT device performance. When the thickness was increased, turn-on voltage and subthreshold swing was decreased. The a-IGZO channels and source/drain metals were deposited with shadow mask. The a-IGZO channel layer was deposited on $SiO_2$/p-Si substrates by RF magnetron sputtering, where RF power is 150W. And working pressure is 3m Torr, at $O_2/Ar$ (2/28 sccm) atmosphere. The electrodes were formed with electron-beam evaporated Ti (30 nm) and Au (70 nm) bilayer. Finally, Al (150nm) as a gate metal was thermal-evaporated. TFT devices were heat-treated in a furnace at 250 $^{\circ}C$ and nitrogen atmosphere for 1hour. The electrical properties of the TFTs were measured using a probe-station. The TFT with channel thickness of 150nm exhibits a good subthreshold swing (SS) of 0.72 V/decade and on-off ratio of $1{\times}10^8$. The field effect mobility and threshold voltage were evaluated as 7.2 and 8 V, respectively.

• 공업화학
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• 제30권2호
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• pp.205-211
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• 2019

지난 수십 년 동안 고분자 분산형 액정(polymer dispersed liquid crystal, PDLC)은 전기광학적으로 전환이 가능한 특성으로 인해 빛의 투과도를 자유롭게 조절할 수 있는 smart window를 개발하는 물질로서 주목을 받아왔다. 본 연구에서는 높은 구동전압과 낮은 명암비 등의 PDLC 문제점을 해결하기 위해 아크릴계 단량체 2-hydroxyethyl acrylate (2-HEA)와 ethylene glycol phenyl ether acrylate (EGPA)의 조성이 PDLC의 전기광학 특성에 미치는 영향을 평가하였다. 상온에서 10 cps 이하의 낮은 점도를 나타내는 2-HEA와 EGPA 단량체를 사용하여 제조하는 경우 보다 쉽게 capillary action에 의해서 indium tin oxide (ITO) glass 사이에 주입하는 공정이 가능하였다. Phenyl group를 포함한 EGPA 단량체가 대부분으로 이루어진 1 : 9인 단량체 혼합물로 만들어진 PDLC cell의 경우 전기장을 인가하지 않은 경우에도 불투명한 상태가 관측되지 않았고 인가 전압에 따라 매우 불안정한 투과율을 나타내었다. Cell gap thickness가 증가함에 따라 문턱전압(threshold voltage, $V_{th}$)과 포화전압(saturation voltage, $V_{sat}$)도 증가하는 경향을 나타내었으며, $20{\mu}m$의 cell gap thickness를 갖는 PDLC cell이 10과 $40{\mu}m$의 경우 보다 상대적으로 높은 명암비를 나타내었다. 특히, 7 : 3 비율의 2-HEA : EGPA 단량체 혼합물을 사용하여 제조된 PDLC cell의 경우가 낮은 구동전압과 높은 명암비의 가장 우수한 전기광학적 특성을 나타내었다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2009년도 추계학술발표대회
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• pp.23.1-23.1
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• 2009

ZnO is of great interest for various technological applications ranging from optoelectronics to chemical sensors because of its superior emission, electronic, and chemical properties. In addition, vertically well-aligned ZnO nanorods on large areas with good optical and structural properties are of special interest for the fabrication of electronic and optical nanodevices. To date, several approaches have been proposed for the growth of one-dimensional (1D) ZnO nanostructunres. Several groups have been reported the MOCVD growth of ZnO nanorods with no metal catalysts at $400^{\circ}C$, and fabricated a well-aligned ZnO nanorod array on a PLD prepared ZnO film by using a catalyst-free method. It has been suggested that the synthesis of ZnO nanowires using a template-less/surfactant-free aqueous method. However, despite being a well-established and cost-effective method of thin film deposition, the use of magnetrons puttering to grow ZnO nanorods has not been reported yet. Additionally,magnetron sputtering has the dvantage of producing highly oriented ZnO film sat a relatively low process temperature. Currently, more effort has been concentrated on the synthesis of 1D ZnO nanostructures doped with various metal elements (Al, In, Ga, etc.) to obtain nanostructures with high quality,improved emission properties, and high conductance in functional oxide semiconductors. Among these dopants, Ga-doped ZnO has demonstrated substantial advantages over Al-doped ZnO, including greater resistant to oxidation. Since the covalent bond length of Ga-O ($1.92\;{\AA}$) is nearly equal to that of Zn-O ($1.97\;{\AA}$), high electron mobility and low electrical resistivity are also expected in the Ga-doped ZnO. In this article, we report the successful growth of Ga-doped ZnO nanorods on c-Sapphire substrate without metal catalysts by magnetrons puttering and our investigations of their structural, optical, and field emission properties.

• 한국표면공학회지
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• 제48권4호
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• pp.158-162
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• 2015

To substitute indium tin oxide (ITO), many substituents have been studied such as metal nanowires, carbon based materials, 2D materials, and conducting polymers. These materials are not good enough to apply to an electrode because theses exhibit relatively high resistance. So metal grids are required as an additionalelectrode to improve the conductivities of substituents. The metal grids were printed by electrohydrodynamic printing system using Ag nanoparticle based ink. The Ag grids showed high uniformity and the line width was about $10{\mu}m$. The Ag nanoparticles are surrounded by dispersants such as unimolecular and polymer to prevent aggregation between Ag nanoparticles. The dispersants lead to low conductivity of Ag grids. Thus, the sintering process of Ag nanoparticles is strongly recommended to remove dispersants and connect each nanoparticles. For sintering process, the interface and microstructure of the Ag grid were controlled in 1.0 torr Ar atmosphere at aound $400^{\circ}C$ of temperature. From the sintering process, the uniformity of the Ag grid was improved and the defects on the Ag grids were reduced. As a result, the resistivity of Ag grid was greatly reduced up to $5.03({\pm}0.10){\times}10^{-6}{\Omega}{\cdot}cm$. The metal grids embedded substrates containing low pressure Ar sintered Ag grids showed 90.4% of transmittance in visible range with $0.43{\Omega}/{\square}$ of sheet resistance.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.461-461
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• 2013

Over the last decade, zinc oxide (ZnO) thin films have attracted considerable attention owing to large band gap of 3.37 eV and large exciton binding energy of 60 meV at room temperature [1-3]. Recent interest in ZnO related researches has been switched into the fabrication and characterization of low-dimensional nanostructures, such as nano-wires and nano-dots that can be applicable to manufacture the optoelectronic devices such as ultraviolet lasers, light-emitting-diodes and detectors. Since the optical properties of ZnO nano-structures might be distinct from those of bulk materials or thin films, the low-dimensional phenomena should be examined further. In order to utilize such advanced optoelectronic devices, one of the challenges is how to control the surface state related emissions that are drastically increased with increasing the density of the nano-structures and the surface-to-volume ratio. This paper reports the synthesis and characterization of self-assembled ZnO hexagonal nano-disks grown by radio-frequency magnetron sputtering. X-ray diffraction data and scanning electron microscopy data showed that ZnO hexagonal nano-disks were nucleated on top of the flat surfaces as the film thickness reached to 1.56 ${\mu}m$ and then the number of nano-disks increased with increasing the film thickness. The lateral size of hexagonal nano-disks was ~720 nm and height was ~74 nm. The strong photo luminescence spectra obtained at 10 K was also observed, which was assigned to a surface exciton emission at 3.3628 eV arising from the surface sites of hexagonal nano-disks.