• Journal of Korean Vacuum Science & Technology
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• v.2 no.2
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• pp.63-77
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• 1998

The oxidation of NiAl(110) was investigated in the temperature regime between 300K and 1300 K using LEED (low energy electron diffraction), TPD (temperature programmed desorption) and HREELS (high resolution electron energy loss spectroscopy). The adsorption of N2O and O2 up to reconstructions. Stepwise annealing of the oxygen-saturated sample from 600 K to 1300K in UHV (ultra-high vacuum,) results in firstly the onset of randomly oriented then finally fairly well-ordered. 5 ${\AA}$ Al2O3 film with quasi-hexagonal periodicity. Ordered thicker oxide films of 18-30 ${\AA}$ seem to be grown on this interfacial oxide layer by direct oxidation of sample at elevated temperature between 1150 and 1300 K because of the LEED pattern consisting of new broad hexagonal spots and the previous 5 ${\AA}$ spots. Although the periodicity of surface oxygen arrays shows no significant change from an hexagonal close-packing, the O-O distance changes from ∼3.0 ${\AA}$ film to ∼2.9 ${\AA}$ for thicker oxides. with the appearance of Auger parameter, for the 5${\AA}$ film can be described better as an interfacial oxide layer. The observation of three symmetric phonon peaks can be also a supporting evidence for this phase assignment since thicker oxide films on the Same Ni2Al3(110) show somewhat different phonon structure much closer to that of the ${\gamma}$-Al2O3. The adsorption/desorption of methanol further proves the preparation of less-defective and/or oxygen-terminated Al2O3 films showing ordered phase transitions with the change of oxide thickness between 5 ${\AA}$ to 30 ${\AA}$.

• Progress in Superconductivity
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• v.3 no.1
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• pp.31-35
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• 2001

We investigated the temperature and magnetic field dependent optical properties of a$ MgB_2$ thin film in the far-infrared region. In the superconducting state, i.e. 5 K, we obtained the values of superconducting gap $2\Delta$ ~ 5.2 meV and $2\Delta$ $_{k}$ $B/T_{c}$ ~1.8. Although the value of$ 2\Delta$$B/T_{c}$ was nearly half of the BCS value, the $2\Delta$ seemed to follow the temperature dependence of the BCS formula. Under the magnetic field (H), the superconducting state became suppressed. Interestingly, we found that the normal state area fraction abruptly increased at low field but slowly increased at high field. It did not follow the H-dependences predicted for a s-wave superconductor (i.e. a linear dependence) nor for a s-wave one (i.e. $H^{1}$2/ dependence). We discussed the complex gap nature of $MgB_2$ in comparison with two gap and anisotropic s-wave scenarios.ios.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.397-397
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• 2013

The electrical, electronic, optical properties and the local structure of Nickel Oxide (NiO) thin film have been investigated by X-ray photoelectron spectroscopy (XPS), Reflection Electron Energy Loss Spectroscopy (REELS), UV-spectrometer,Hall Effect measurement and X-ray absorption spectroscopy (XAS). The XPS results show that the Ni 2p spectra for all films consist of $Ni2p_{3/2}$ at around 854.5 eV which indicate the presence of Ni-O bond from NiO phase and for the annealed film at temperature above $200^{\circ}C$ shows the coexist Ni oxide and Ni metal phase. The REELS spectra showed that the band gaps of the NiO thin films were abruptly decreased with increasing temperature. The values of the band gaps are consistent with the optical band gaps estimated by UV-Spectrometer. The optical transmittance spectra shows that the transparency of NiO thin films in the visible light region was deteriorated with higher temperature due to existence of $Ni^0$. Hall Effect measurement suggest that the NiO thin films prepared at relatively low temperatures (RT and $100^{\circ}C$) are suitable for fabricating p-type semiconductor which showed that the best properties was achieved at $100^{\circ}C$, such as a low resistivity of $7.49{\Omega}.cm$. It can be concluded that the annealing process plays a crucial role in converting from p type to n type semiconductor which leads to reducing electrical resistivity of NiO thin films. Furthermore, the extended X-ray absorption fine structure (EXAFS) spectrum at the Ni K-edge was used to address the local structure of NiO thin films. It was found that the thermal treatments increase the order in the vicinity of Ni atom and lead the NiO thin films to bunsenite crystal structure. Moreover, EXAFS spectra show in increasing of coordination number for the first Ni-O shell and the bond distance of Ni-O with the increase of substrate temperature.

• Journal of the Korean Ceramic Society
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• v.31 no.11
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• pp.1401-1413
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• 1994

The synthesis of kaolinite mineral from domestic diatomite for silica resource, commercial vailable gibbsite or alumina for alumina resource were made under various hydrothermal treatment, and the sythetic effect of acidic mineralizers, temperature treatment with time duration, particle size of alumina on formation of kaolinite mineral and the plastic properties of synthesized kaolinite were investigated. The various acidic mineralizers which are HCl, HNO3, H2SO4 and Oxalic acid were employed for hydrothermal reaction in the range of 0.01 mol/ι to 2 mol/ι concentration of each mineralizers. It was found that HCl in the level of 1 mol/ι solution produced highly yields of well-crystallized and platy form kaolinite mineral and gave the most effective extraction of iron oxide, compared to that of others, that HNO3 produced highly yield of kaolinite but lower extraction of iron oxide, that H2SO4 produced low yield of kaolinite and formed alunite mineral, and that oxialic acid formed spherical crystalline kaolinite and gave low extraction of iron oxide. Moreover, it showed that kaolinite minerals were well synthesized in a wide range of less than 2 mol/ι acids, but were poorly synthesized at more than 2 mol/ι acids. However, boehmite and kaolinite were coexistently formed in the temperature range of 18$0^{\circ}C$ and 20$0^{\circ}C$ when the calcined diatomite and gibbsite were involved. The well-ordered kaolinite mineral as a platy form was highly synthesized in the temperature range of 220 and 24$0^{\circ}C$, when the same marterials as above were used with treatment of 1 mol/ι HCl solution. The results also revealed that the size of crystalline platy form kaolinite, synthesized from alumina and calcined diatomite with treatment in 1 mol/ιHCl solution at 24$0^{\circ}C$, was much larger than that of gibbsite and calcined diatomite shown previously, and that kaolinite and corundum minerals were coexistently formed under any hydrothermal treatment conditions. The plasticity of synthesized kaolinite from under 2 ${\mu}{\textrm}{m}$ alumina and calcined diatomite was very poor, and that of the synthesized kaolinite from raw diatomite and gibbsite gave higher than that of calcined diatomite and gibbsite.

• Applied Chemistry for Engineering
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• v.24 no.6
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• pp.599-604
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• 2013

In this study, Ti added Mn-Cu mixed oxide catalysts were prepared by a co-precipitation method and used for the low temperature (< $200^{\circ}C$) selective catalytic reduction (SCR) of NOx with $NH_3$. Physicochemical properties of these catalysts were characterized by BET, XRD, XPS, and TPD. Mn-Cu mixed oxide catalysts were found to be amorphous with a large surface and they showed high SCR activity. Experimental results showed that the addition of $TiO_2$ to Mn-Cu oxide enhanced the SCR activity and $N_2$ selectivity. Ti addition led to the chemically adsorbed oxygen species that promoted the oxidation of NO to $NO_2$ and increased the number of $NH_3$ adsorbed-sites such as $Mn^{3+}$.

• International Journal of Air-Conditioning and Refrigeration
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• v.14 no.4
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• pp.147-155
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• 2006

The drag reduction (DR) and heat transfer efficiency reduction (ER) of non-ionic surfactant were investigated as a function of fluid velocity, temperature, and surfactant concentration. An experimental apparatus consisting of two temperature controlled water storage tanks, pumps, test specimen pipe and the piping network, two flow meters, two pressure gauges, a heat exchanger, and data logging system was built. From the experimental results, it was concluded that existing alkyl ammonium surfactant (CTAC Cethyl Trimethyl Ammonium Chloride) had DR of $0.6{\sim}0.8$ at $1,000{\sim}2,000ppm$ concentration with fluid temperature ranging between $50{\sim}60^{\circ}C$. However, the DR was very low when the fluid temperature was $70{\sim}80^{\circ}C$. The new amine oxide and betaine surfactant(SAOB Stearyl Amine Oxide + Betaine) had lower DR at fluid temperatures ranging between $50{\sim}60^{\circ}C$ compared with CTAC. However, with fluid temperature ranging between $70{\sim}80^{\circ}C$ the DR was $0.6{\sim}0.8$ when the concentration level was $1,000{\sim}2,000ppm$.

• Current Photovoltaic Research
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• v.5 no.1
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• pp.15-19
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• 2017

The fossil fuel power consumption generates $CO_2$, which causes the problems such as global warming. Also, the increase in energy consumption has accelerated the depletion of the fossil fuels, and renewable energy is attracting attention. Among the renewable energies, the solar energy gets a lot of attention as the infinite clean energy source. But, the supply level of solar cell is insignificant due to high cost of generation of electric power in comparison with fossil fuels. Thus several researchers are recently doing the research on ultra-low-cost solar cells. Also, $Cu_2O$ is one of the applied materials as an absorption layer in ultra-low-cost solar cells. Cuprous oxide ($Cu_2O$) is highly desirable semiconductor oxide for use in solar energy conversion due to its direct band gap ($E_g={\sim}2.1eV$) and a high absorption coefficient that absorbs visible light of wavelengths up to 650 nm. In addition, $Cu_2O$ has several advantages such as non-toxicity, low cost and can be prepared with simple and cheap methods on large scale. In this work, we fabricated the $Cu_2O$ thin films by reactive sputtering method. The films were deposited with a Cu target with variable parameters such as substrate temperature, rf-power, and annealing condition. Finally, we confirmed the structural properties of thin films by XRD and SEM.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.175-175
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• 2010

Transparent conducting oxide (TCO) films are widely used as transparent conducting thin film material for application in various fields such as solar cells, optoelectronic devices, heat mirrors and gas sensors, etc. Recently the increased utilization of many transparent electrodes has accelerated the development of inexpensive TCO materials. Indium tin oxide (ITO) film is well-known for TCO materials because of its low resistivity, but there is disadvantage that it is too expensive. ZnO film is cheaper than ITO but it shows thermally poor stability. On the contrary, antimony-doped tin oxide films (ATO) are more stable than TCO films such as Al-doped zinc oxide (AZO) and ITO. Moreover, SnO2 film shows the best thermal and chemical stability, low cost and mechanical durability except the poor conductivity. However, annealing is proved to improve the conductivity of ATO film. Therefore, in this work, antimony (6 wt%) doped tin oxide films to improve the conductivity were deposited on 7059 corning glass by RF magnetron sputtering method for the application to transparent electrodes. In general, of all TCO films, glass is the most commonly selected substrate. However, for future development in flexible devices, glass is limited by its intrinsic inflexibility. In this study, we report the growth and properties of antimony doped tin oxide (ATO) films deposited on PES flexible substrate by using RF magnetron sputtering. The optimization process was performed varying the sputtering parameters, such as RF power and working pressure, and parameter effect on the structural, electrical and optical properties of the ATO films were investigated.

• Proceedings of the Materials Research Society of Korea Conference
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• 2007.11a
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• pp.131.2-131.2
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• 2007

• Journal of the Semiconductor & Display Technology
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• v.16 no.1
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• pp.97-101
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• 2017

In this paper, IGZO thin film transistor (TFT) was fabricated with cross-linked Poly (4-vinylphenol) (PVP) gate dielectric for flexible, transparent display applications. The PVP is one of the candidates for low-temperature gate insulators. MIM structure was fabricated to measure the leakage current and evaluate the insulator properties according to the annealing temperature. Low leakage current ( <0.1nA/cm2 @ 1MV/cm ) was observed at $200^{\circ}C$ annealing condition and decreases much more as the annealing temperature increases. The electrical characteristics of IGZO TFT such as subthreshold swing, mobility and ON/OFF current ratio were also improved, which shows that the performance of IGZO TFTs with PVP can be enhanced by reducing the amount of incomplete crosslinking in PVP.