• Title/Summary/Keyword: low-dielectric materials

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Nanopore Generation in Low Dielectric Organosilicate and SiCOH Thin Films

  • Heo, Kyu-Young;Yoon, Jin-Hwan;Jin, Kyeong-Sik;Jin, Sang-Woo;Oh, Kyoung-Suk;Choi, Chi-Kyu;Ree, Moon-Hor
    • Proceedings of the Polymer Society of Korea Conference
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    • 2006.10a
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    • pp.298-298
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    • 2006
  • There has been much interest in incorporating nanoscale voids into dielectric materials in order to reduce their k value, and thus in producing low-k porous interdielectric materials. One approach to the development of low-k dielectric materials is the templated polycondensation of organosilicate precursors in the presence of a thermally labile, organic polymeric porogen. The other is SiOCH films have low dielectric constant as well as good mechanical strength and high thermal stability through PECVD. In this article we explore the nanopore generation mechanism of organosilicate film using star-shape porogen and SiOCH film using bis-trimethylsilylmethane (BTMSM) precursor.

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Possible Glass Systems for Non-Pb Dielectric Layers, Barrier Rib and Sealant in PDP

  • Kim, Hyung-Sun;Jung, Byung-Hae
    • 한국정보디스플레이학회:학술대회논문집
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    • 2003.07a
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    • pp.391-394
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    • 2003
  • It is inevitable that reconsideration of the use of lead oxides in the electronics industry be undertaken as long as detrimental effects to the environment remain. To solve this problem, many recent studies on Pb-free compositions for PDP (plasma display panel) dielectric layers and also sealing glass compositions have been made. The present study was conducted to investigate whether the alternative systems for leadfree low firing glasses, detailed below, are available for use in PDP materials. The results suggest that low-melting phosphate glasses would be suitable as an alternative material for the Pb-based dielectric layer, sealants and barrier ribs in PDP.

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Effect of viscosity of paste and speed of printing on green transparent dielectric during screen printing process in PDP

  • Cha, Gun-Young;Huh, Jeung-Soo;Park, Jun-Hyun;Kim, Hyung-Sun
    • 한국정보디스플레이학회:학술대회논문집
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    • 2002.08a
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    • pp.1085-1087
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    • 2002
  • To have cost down and get improved image quality and performance of plasma display panel, several factors have been developed including development of low price material and improvement in production for PDP front plate. In this work, viscosity and surface characteristics of transparent dielectric were investigated to find the optimum and low price materials fabrication condition of transparent dielectric paste. It was found that uniformity and transmissivity of green and fired dielectrics had some relationship with the kinds and content of binder, and solvent as well.

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Parasitics analysis of a grounded bondwire for low-cost plastic packaging of microwave devices (초고주파소자의 저가 플라스틱 실장을 위한 접지된 본딩와이어의 기생특성 해석)

  • 윤상기;이해영
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.34D no.2
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    • pp.21-26
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    • 1997
  • The dielectric effects on the parasitics of bondwires buried in slightly-lossy dielectric materials hav been investigated over a wide frequency range using the method of moments with incorporation of ohmic and dielectric losses. The FR-4 composite is widely used as a basis material for PCB and plastic packages, because of it sinherent electricl and chemical stbility and low cost. The cole-cole model, which is representative complex permittivity model of epoxy polymers, has been applied to consider the dielectric effects in the MoM calculation. The prasitic impedance of a grounded bondwire in FR-4 composite is greatly increased due to the dielectric loading effect enhanced by the radiation at high frequencies. These calculation results will be helpful for designing and packaging of high-frequency low-cost IC's.

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반도체 산업용 나노기공 함유 유기실리카 박막

  • 차국헌;윤도영;이진규;이희우
    • Proceedings of the Korea Crystallographic Association Conference
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    • 2002.11a
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    • pp.48-48
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    • 2002
  • It is generally accepted that ultra low dielectric interlayer dielectric materials (k < 2.2) will be necessary for ULSI advanced microelectronic devices after 2003, according to the International Technology Roadmap for Semiconductors (ITRS) 2000. A continuous reduction of dielectric constant is believed to be possible only by incorporating nanopores filled with air (k = 1.0) into electrically insulating matrices such as poly(methyl silsesquioxane) (PMSSQ). The nanopo.ous low dielectric films should have excellent material properties to survive severe mechanical stress conditions imposed during the advanced semiconductor processes such as chemical mechanical planarization process and multilayer fabrication. When air is incorporated into the films for lowering k, their mechanical strength has inevitably to be sacrificed. To minimize this effect, the nanopores are controlled to exist in the film as closed cells. The micromechanical properties of the nanoporous thin films are considered more seriously than ever, particularly for ultra low dielectric applications. In this study, three approaches were made to design and develop nanoporous low dielectric films with improved micromechanical properties: 1) wall density increase of nanoporous organosilicate film by copolymerization of carbon bridged comonomers; 2) incorporation of sacrificial phases with good miscibility; 3) selective surface modification by plasma treatment. Nanoporous low-k films were prepared with copolymerized PMSSQ and star-shaped sacrificial organic molecules, both of which were synthesized to control molecular weight and functionality. The nanoporous structures of the films were observed using field emission scanning electron microscopy, cross-sectional transmission electron microscopy, atomic force microscopy, and positronium annihilation lifetime spectroscopy(PALS). Micromechanical characterization was performed using a nanoindentor to measure hardness and modulus of the films.

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A study on the sintering and Dielectric Characteristics of Low Temperature Sinterable $SiO_2-TiO_2-Bi_2O_3-RO$ System (RO:BaO-CaO-SrO) Glass/Ceramic Dielectrics as a Function of $AI_2O_3$ Content (저온 소성용 $SiO_2-TiO_2-Bi_2O_3-RO$계 (RO;BaO-CaO-SrO) Glass/Ceramic 유전체의 $AI_2O_3$ 함량에 따른 소결 및 유전 특성의 변화)

  • Yun, Jang-Seok;Lee, In-Gyu;Lim, Uk;Cho, Hyun-Min;Park, Chong-Chol
    • Journal of the Korean Ceramic Society
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    • v.36 no.12
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    • pp.1350-1355
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    • 1999
  • Sintering characteristics and dielectric properties of low temperature sinterable Glass/Ceramic dielectric materials were investigated. The dielectric materials which were developed for microwave frequency applications consist of SiO2-TiO2-Bi2O3-RO system(RO:BaO-CaO-SrO) crystallizable glass and Al2O3 as a ceramic filler. Sintering experiments showed that no more densification occurred above 80$0^{\circ}C$ and bulk density and shrinkage depended on Al2O3 content only. Results of dielectric measurements showed that $\varepsilon$r Q$\times$f and $\tau$f of the material containing 30wt% Al2O3 were 17.3, 600 and +23 ppm respectively. Those values for 45 and 60wt% Al2O3 samples were 11.6, 1400, +0.7 ppm and 7.2, 2000, -8.5 ppm, repectively. The results clearly showed that the Glas/Ceramic materials of present experiment decreased in $\varepsilon$r and increased in $\times$f value and changed from positive to negative value in $\tau$f value with the increasement of Al2O3 content.

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$Ba_5Nb_4O_{15}$ Ceramics with Temperature-Stable High Dielectric Constant and Low Microwave Loss

  • Woo Hwan Jung;Jeong Ho Sohn;Yoshiyuki Inaguma;Mitsuru Itoh
    • The Korean Journal of Ceramics
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    • v.2 no.2
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    • pp.111-113
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    • 1996
  • Dielectric properties at microwave frequency region of the five-layered compound $Ba_5Nb_4O_{15}$ prepared by the conventional solid state reaction method were investigated. $Ba_5Nb_4O_{15}$ has excellent microwave dielectric characteristics; ${\varepsilon}_r$=38, Q=7500 at 10 GHz, and ${\tau}_l$=+50 ppm/K. Since this compound has a high dielectric constant, high Q and sufficiently stable characteristics, it is useful for the applications at microwave frequencies.

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Dielectric Properties of Complex Microstructure for High Strength LTCC Material (고강도 LTCC 소재을 위한 복합구조의 유전특성)

  • Kim, Jin-Ho;Hwang, Seong-Jin;Sung, Woo-Kyung;Kim, Hyung-Sun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.309-309
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    • 2007
  • The LTCCs (low-temperature co-fired ceramics) are very important for electronic industry to build smaller RF modules and to fulfill the necessity for miniaturization of devices in wireless communication industry. The dielectric materials with sintering temperature $T_{sint}$<$900^{\circ}C$ are required. In this study, we investigated with glass-ceramic composition, which was crystallized with two crystals. The microstructure, crystal phases, thermal and mechanical properties, and dielectric properties of the composites were investigated using FE-SEM, XRD, TG-DTA, 4-point bending strength test and LCR measurement. The starting temperature for densification of a sintered body was at $779{\sim}844^{\circ}C$ and the glass frits were formatted to the crystal phases, $CaAl_2Si_2O_8$(anorthite) and $CaMgSi_O_6$(diopside), at sintering temperature. The sintered bodies exhibited applicable dielectric properties, namely 6-9 for ${\varepsilon}_r$. The results suggest that the glass-ceramic composite would be potentially possible to application of low dielectric L TCC materials.

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Low k Materials for High Frequency High Integration Modules

  • Na, Yoon-Soo;Lim, Tae-Young;Kim, Jin-Ho;Shin, Hyo-Soon;Hwang, Jong-Hee;Cho, Yong-Soo
    • Journal of the Korean Ceramic Society
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    • v.46 no.4
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    • pp.413-418
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    • 2009
  • Glass systems based on Ca, Sr, Ba, and Zn modified alumino-boro silicates were investigated in order to improve the dielectric and mechanical properties of a typical LTCC (low temperature co-fired ceramic) which was developed for high frequency highly-integrated modules. The glass was prepared by a typical melting procedure and then mixed with cordierite fillers to fabricate glass/ceramic composite-type LTCC materials. The amount of cordierite filler was fixed at 50 volumetric%. For an optimal glass composition of 7.5% CaO, 7.5% BaO, 5% ZnO, 10% $Al_2O_3$, 30% $B_2O_3$, and 40% $SiO_2$ in mole ratio, the resultant LTCC composite showed a dielectric constant of 5.8 and a dielectric loss ($tan{\delta}$) of 0.0009 after firing at $900^{\circ}C$. An average bending strength of 160MPa was obtained for the optimal composition.

Optical and dielectric properties of nano BaNbO3 prepared by a combustion technique

  • Vidya, S.;Mathai, K.C.;John, Annamma;Solomon, Sam;Joy, K.;Thomas, J.K.
    • Advances in materials Research
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    • v.2 no.3
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    • pp.141-153
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    • 2013
  • Nanocrystalline Barium niobate ($BaNbO_3$) has been synthesized by a novel auto-igniting combustion technique. The X-Ray diffraction studies reveals that $BaNbO_3$ posses a cubic structure with lattice constant $a=4.071{\AA}$. Phase purity and structure of the nano powder are further examined using Fourier-Transform Infrared and Raman spectroscopy. The average particle size of the as prepared nano particles from the Transmission Electron Microscopy is 20 nm. The UV-Vis absorption spectra of the samples are recorded and the calculated average optical band gap is 3.74eV. The sample is sintered at an optimized temperature of $1425^{\circ}C$ for 2h and attained nearly 98% of the theoretical density. The morphology of the sintered pellet is studied with Scanning Electron Microscopy. The dielectric constant and loss factor of a well-sintered $BaNbO_3$ at 5MHz sample is found to be 32.92 and $8.09{\times}10^{-4}$ respectively, at room temperature. The temperature coefficient of dielectric constant was $-179pp/^{\circ}C$. The high dielectric constant, low loss and negative temperature coefficient of dielectric constant makes it a potential candidate for temperature sensitive dielectric applications.