• Land and Housing Review
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• v.11 no.3
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• pp.75-82
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• 2020

The urban heat island phenomenon that accelerates global warming has always been controversial when summer heatwaves have occurred since it was first investigated and described by Luke Howard in the 1810s. In Korea, since 2014, government have been interested in Cool Roof and painted white coating on the rooftops of the aging and weak buildings, and the cool roof business has expanded nationwide. However, the roof occupies 20-25% of the entire city surface, much less than 37-45% of the pavement area consisting of roads, parking lots and sidewalks, there is a need to expand the policy of Cool Pavement as a way to reduce the urban heat island phenomenon. Domestic cities are high-rise buildings centered on apartments, and the area occupied by outer walls is larger than that of rooftops compared to foreign low-rise buildings. Therefore, as a way to reduce the urban heat island phenomenon, there is a need for a policy to expand the Cool Roof in buildings and use Cool Wall in parallel. Therefore, this study aims to present the expansion of Cool Wall in buildings and Cool Pavement in urban areas, expanding the installation range of Cool Roof, by comparing and reviewing the thermal characteristics of eco-friendly ceramic coating with excellent thermal proof performance and coatings used for roof waterproofing.

• Journal of Welding and Joining
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• v.32 no.3
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• pp.68-73
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• 2014

Among through silicon via (TSV) technologies, for replacing Cu filling method, the method of molten solder filling has been proposed to reduce filling cost and filling time. However, because Sn alloy which has a high coefficient of thermal expansion (CTE) than Cu, CTE mismatch between Si and molten solder induced higher thermal stress than Cu filling method. This thermal stress can deteriorate reliability of TSV by forming defects like void, crack and so on. Therefore, we fabricated SiC composite filling material which had a low CTE for reducing thermal stress in TSV. To add SiC nano particles to molten solder, ball-typed SiC clusters, which were formed with Sn powders and SiC nano particles by ball mill process, put into molten Sn and then, nano particle-dispersed SiC composite filling material was produced. In the case of 1 wt.% of SiC particle, the CTE showed a lowest value which was a $14.8ppm/^{\circ}C$ and this value was lower than CTE of Cu. Up to 1 wt.% of SiC particle, Young's modulus increased as wt.% of SiC particle increased. And also, we observed cross-sectioned TSV which was filled with 1 wt.% of SiC particle and we confirmed a possibility of SiC composite material as a TSV filling material.

• Ceramist
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• v.22 no.4
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• pp.429-451
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• 2019

Quartz glass is a key material for making semiconductor process components because of its purity, low thermal expansion, high UV transmittance and relatively low cost. Domestic quartz glass has a market worth about 500 billion won in 2018, and the market power of Japanese materials is very high. Quartz glass for semiconductor process can be divided into general process and exposure. For general process, molten quartz glass is mainly used, but synthetic quartz glass with higher purity is preferred. Synthetic quartz glass is used as the photomask for the exposure process. Recently, as semiconductors started the sub-nm process, the transition from the transmission type using ArF ultraviolet (194 nm) to the reflection type using EUV ultraviolet (13.5 nm) began. Therefore, the characteristics required for the synthetic quartz glass substrates used so far are also rapidly changing. This article summarizes the current technical trends of quartz glass and recent technical issues. Lastly, the present situation and development possibility of quartz glass technology in Korea were diagnosed.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.122-122
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• 1999

Graphite with its advantages of high thermal conductivity, low thermal expansion coefficient, and low elasticity, has been widely used as a structural material for high temperature. However, graphite can easily react with oxygen at even low temperature as 40$0^{\circ}C$, resulting in CO2 formation. In order to apply the graphite to high temperature structural material, therefore, it is necessary to improve its oxidation resistive property. Silicon Carbide (SiC) is a semiconductor material for high-temperature, radiation-resistant, and high power/high frequency electronic devices due to its excellent properties. Conventional chemical vapor deposited SiC films has also been widely used as a coating materials for structural applications because of its outstanding properties such as high thermal conductivity, high microhardness, good chemical resistant for oxidation. Therefore, SiC with similar thermal expansion coefficient as graphite is recently considered to be a g행 candidate material for protective coating operating at high temperature, corrosive, and high-wear environments. Due to large lattice mismatch (~50%), however, it was very difficult to grow thick SiC layer on graphite surface. In theis study, we have deposited thick SiC thin films on graphite substrates at temperature range of 700-85$0^{\circ}C$ using single molecular precursors by both thermal MOCVD and PEMOCVD methods for oxidation protection wear and tribological coating . Two organosilicon compounds such as diethylmethylsilane (EDMS), (Et)2SiH(CH3), and hexamethyldisilane (HMDS),(CH3)Si-Si(CH3)3, were utilized as single source precursors, and hydrogen and Ar were used as a bubbler and carrier gas. Polycrystalline cubic SiC protective layers in [110] direction were successfully grown on graphite substrates at temperature as low as 80$0^{\circ}C$ from HMDS by PEMOCVD. In the case of thermal MOCVD, on the other hand, only amorphous SiC layers were obtained with either HMDS or DMS at 85$0^{\circ}C$. We compared the difference of crystal quality and physical properties of the PEMOCVD was highly effective process in improving the characteristics of the a SiC protective layers grown by thermal MOCVD and PEMOCVD method and confirmed that PEMOCVD was highly effective process in improving the characteristics of the SiC layer properties compared to those grown by thermal MOCVD. The as-grown samples were characterized in situ with OES and RGA and ex situ with XRD, XPS, and SEM. The mechanical and oxidation-resistant properties have been checked. The optimum SiC film was obtained at 85$0^{\circ}C$ and RF power of 200W. The maximum deposition rate and microhardness are 2$mu extrm{m}$/h and 4,336kg/mm2 Hv, respectively. The hardness was strongly influenced with the stoichiometry of SiC protective layers.

• Journal of the Korean Ceramic Society
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• v.27 no.2
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• pp.256-264
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• 1990

Cordierite(2MgO$.$2Al2O3$.$5SiO2) was known to display low thermal expansions over wide temperature ranges, but showed poor mechanical strength. The present studies have been concerned with the sintering of cordierite based ceramics containing pure or stabilized zirconia. The crystallographic and microstructural results were not affected by the fact whether added zirconia was stabilized or not. As the contents of zirconia were increased, M.O.R., KIC, bulk densities were increased but the thermal expansion coefficients were decreased.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.05a
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• pp.148-149
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• 2012

As one of zero-expansion coefficient materials $Al_2TiO_5$ ceramics was prepared and the thermal shock-resistance was investigated by using DV-X analysis. In this report the mechanism of thermal shock-resistance and low mechanical strength.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2004.10a
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• pp.560-563
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• 2004

Invar is a compound metal of Fe-Ni system and contain 36％ Ni. The most distinction characteristic of Invar is the coefficient of thermal expansion is 1.0 10$^{-6}$ /$^{\circ}C$. That is a tenth of general steel material. This low thermal expansion characteristic of Invar is applied to the missile, aircraft, monitor CRT and frontier display's shadow mask such as FED and OLED. The usage of the Invar shadow mask for display is increasing due to the requirement of larger size and flatness monitor. The Invar shadow mask is machined by two ways electro-forming and laser now. However the electro-forming takes a too long time and the laser machining is accompanied with Burr. In this study, PEMM(pulse electrochemical micro machining) is conducted to machine the micro hole to the Invar and 80${\mu}{\textrm}{m}$ hole was machined.

• Journal of the Korean Ceramic Society
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• v.27 no.3
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• pp.345-354
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• 1990

The densification behaviro and resulting properties of cordierite-aluminium titanate composites containing 5 to 40wt.% aluminium titanate were investigated. Compared with cordierite monolithics a substantial increase of sintering temperature range for composites was observed, which was due to the formation of cordierite and glass phase at relatively low temperatures. The bending strength of composites showed its maximum at 30wt.% aluminium titanate content, which was about 50% increase relative to the cordierite monolithics, then decreased by a small amount at 40wt.% aluminium titanate content. The decrease was explained by the increase of microcracks whose presence was confirmed by the hysteresis of thermal expansion curve of composites. However, the microcracks formed was not severe enough to produce a significant decrease in strength, which was also evidenced by the continuous increase of thermal expansion coefficient up to 40wt.% aluminium titanate content.

• Carbon letters
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• v.14 no.3
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• pp.152-161
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• 2013

Needle coke is an important material for graphite electrodes. Delayed coking is used to produce needle coke. Producing good quality needle coke is not simple because it is a multi-parameter controlled process. Apart from that, it is important to understand the mechanism responsible for the delayed coking process, which involves mesophase formation and uniaxial rearrangement. Temperature and pressure need to be optimized for the different substances in every feedstock. Saturate hydrocarbon, aromatic, resin and asphaltene compounds are the main components in the delayed coking process for a low Coefficient Thermal Expansion value. In addition, heteroatoms, such as sulphur, oxygen, nitrogen and metal impurities, must be considered for a better graphitization process that prevents the puffing effect and produces better mesophase formation.

• Journal of the Korean institute of surface engineering
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• v.35 no.5
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• pp.289-294
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• 2002

ZnTe films have been grown on (100) GaAs substrate with two representative problems. The one is lattice mismatch, the other is thermal expansion coefficients mismatch of ZnTe /GaAs. It claims here, the relationship of film thickness and defects distribution with (100) ZnTe/GaAs using hot wall epitaxy (HWE) growth was investigated by transmission electron microscopy (TEM). It analyzed on the two-sort side using TEM with cross-sectional transmission electron microscopy (XTEM) and high-resolution electron microscopy (HREM). Investigation into the nature and behavior of dislocations with dependence-thickness in (100) ZnTe/ (100) GaAs hetero-structures grown by transmission electron microscopy (TEM). This defects range from interface to 0.7 $\mu\textrm{m}$ was high density, due to the large lattice mismatch and thermal expansion coefficients. The defects of low density was range 0.7$\mu\textrm{m}$~1.8$\mu\textrm{m}$. In the thicker range than 1.8$\mu\textrm{m}$ was measured hardly defects.