• 제목/요약/키워드: low temperature plasma process

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Ion Flux Assisted PECVD of SiON Films Using Plasma Parameters and Their Characterization of High Rate Deposition and Barrier Properties

  • Lee, Joon-S.;Jin, Su-B.;Choi, Yoon-S.;Choi, In-S.;Han, Jeon-G.
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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    • pp.236-236
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    • 2011
  • Silicon oxynitride (SiON) was deposited for gas barrier film on polyethylene terephthalate (PET) using octamethylycyclodisiloxane (Si4O4C8H24, OMCTS) precursor by plasma enhanced chemical vapor deposition (PECVD) at low temperature. The ion flux and substrate temperature were measured by oscilloscope and thermometer. The chemical bonding structure and barrier property of films were characterized by Fourier transform infrared (FT-IR) spectroscopy and the water vapor transmission rate (WVTR), respectively. The deposition rate of films increases with RF bias and nitrogen dilution due to increase of dissociated precursor and nitrogen ion incident to the substrate. In addition, we confirmed that the increase of nitrogen dilution and RF bias reduced WVTR of films. Because, on the basis of FT-IR analysis, the increase of the nitrogen gas flow rate and RF bias caused the increase of the C=N stretching vibration resulting in the decrease of macro and nano defects.

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저온 플라즈마 및 암모니아 선택적 환원공정을 활용한 저온 탈질공정의 특성(I) (Characteristics of Low Temperature De-NOx Process with Non-thermal Plasma and NH3 Selective Catalytic Reduction (I))

  • 이재옥;송영훈
    • 공업화학
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    • 제17권4호
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    • pp.409-413
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    • 2006
  • $150{\sim}200^{\circ}C$의 저온조건에 적용하기 위한 탈질공정으로서 저온 플라즈마 및 암모니아 SCR 공정을 복합시킨 탈질공정에 대한 실험적인 연구가 수행되었다. 실험결과 저온조건에서 일반적인 SCR 반응에 비해 매우 빠른 반응속도를 갖는 fast SCR 반응의 가능성을 확인할 수 있었으며, 효과적인 fast SCR 반응을 위해서는 SCR 반응기에 투입되는 $NO_{2}/NO_{x}$의 비가 0.3~0.5 범위에 있음을 알 수 있었다. 본 연구에서는 저온운전에 따른 암모늄염의 발생문제, 배기가스에 포함되어 있는 탄화수소가 공정에 미치는 영향, 유사한 공정과의 운전전력 비교 등 해당기술을 활용하기 위해 기본적으로 필요한 자료를 제공하고 있다.

진공 플라즈마 스프레이 공정을 이용한 W계 복합 코팅층의 제조 및 특성 연구 (Manufacturing and Properties of Low Vacuum Plasma Sprayed W-Carbide Hybrid Coating Layer)

  • 조진현;진영민;안지훈;이기안
    • 한국분말재료학회지
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    • 제18권3호
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    • pp.226-237
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    • 2011
  • W-ZrC and W-HfC composite powders were fabricated by the Plasma Alloying & Spheroidization (PAS) method and the powders were sprayed into hybrid coating layers by using Low Vacuum Plasma Spray (LVPS) process, respectively. Microstructure, mechanical properties, and ablation characteristics of the fabricated coating layers were investigated. The LVPS process led to successful production of W-Carbide hybrid coatings, approximately 400 ${\mu}M$ or above in thickness. As the substrate preheating temperature increased from $870^{\circ}C$ to $917^{\circ}C$, the hardness of the W-ZrC coating layer increased due to decreased porosity. Vickers hardness showed higher value (about 108.4 HV) in W-ZrC hybrid coating material compared to that of W-HfC while adhesive strength was found to be similar in both coating layers. The plasma torch test revealed good ablation resistance of the W-Carbide hybrid coating layers. The relatively high performance W-ZrC coating layer at the elevated temperature is thought to be attributed to both the strengthening effect of ZrC particle remained in the layer and the formation of ZrO2 phase with high temperature stability.

LOW TEMPERATURE DEPOSITION OFSIOx FILMS BY PLASMA-ENHANCED CVD USING 100 kHz GENERATOR

  • Kakinoki, Nobuyuki;Suzuki, Takenobu;Takai, Osamu
    • 한국표면공학회지
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    • 제29권6호
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    • pp.760-765
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    • 1996
  • Silicon oxide thin films are prepared by plasma-enhanced CVD (PECVD) using 100kHz and 13.56MHz generators. Source gases are two sorts of mixture, tetramethoxysilane (TMOS) and oxygen, and tetramethylsilane (TMS) and oxygen. We investigate the effect of frequency on film properties of deposited films including mechanical properties. 100kHz PECVD process can deposit silicon oxide films at $23^{\circ}C$ at the power of 20W. X-ray photoelectron spectroscopy (XPS), infrared spectroscopy (IR) and ellipsometric measurements reveal that the structural quality of the films prepared both by 100kHz process and by 13.56MHz process are very like silicon dioxide. The 100kHz process is adequate for low temperature deposition of SiOx films.

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Decoupled Plasma Nitridation 공정 적용을 통한 Negative Bias Temperature Instability 특성 개선 (Improvement of Negative Bias Temperature Instability by Decoupled Plasma Nitridation Process)

  • 박호우;노용한
    • 한국전기전자재료학회논문지
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    • 제18권10호
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    • pp.883-890
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    • 2005
  • In this paper, the established model of NBTI (Negative Bias Temperature Instability) mechanism was reviewed. Based on this mechanism, then, the influence of nitrogen was discussed among other processes. A constant concentration of nitrogen exists inside $SiO_2$ in order to prevent boron from diffusing and to increase dielectric constant. It was shown that NBTI improvement was achieved by controlling nitrogen profile. It was supposed that the existence of low activation energy of Si-N bonds at $Si-SiO_2$ interface attributes the improvement by making hydrogen prevent interface traps. It was also shown that improvement of NBTI can be achieved by more effective control of nitrogen profile. It was supposed that the maximum control of nitrogen profile can be achieved by DPN (Decoupled Plasma Nitridation) process.

저온 플라즈마 처리를 이용한 파라 아라미드 섬유의 표면 개질 효과 및 역학적 특성 (Surface Modification Effect and Mechanical Property of para-Aramid Fiber by Low-temperature Plasma Treatment)

  • 박성민;권일준;김명순;김삼수;최재영;염정현
    • 한국염색가공학회지
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    • 제24권2호
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    • pp.131-137
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    • 2012
  • para-Aramid fibers were treated by low-temperature plasma to improve the adhesion. The surface of para-aramid fibers were treated with gaseous plasma of several discharge power and treatment time in oxygen gas at 1Torr pressure. The treated fibers at low-temperature plasma were taken oxygen-containing functional groups and micro-crator on the surface. The modified fibers were measured by dynamic contact angle analyzer and XPS(X-ray photoelectron spectroscopy). The Interfacial adhesion properties of aramid fabric and polyurethane resin were determined by T-peel test. The surface of aramid fibers were observed by FE-SEM photographs. It was found that surface modification and chemical component ratio of the aramid fibers were improved wettability and adhesion characterization.

저온 다결정 실리콘 박막 및 태양전지 연구개발동향 (Status of Low Temperature Polycrystalline Silicon Films and Solar Cells)

  • 이정철;김석기;윤경훈;송진수;박이준
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2003년도 하계종합학술대회 논문집 II
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    • pp.1113-1116
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    • 2003
  • This review article gives a comprehensive compilation of recent developments in low temperature deposited poly Si flms, also known as microcrystalline silicon. The development of various ion energy suppression techniques for plasma enhanced chemical vapour deposition and ionless depositions such as HWCVD and expanding thermal plasma, and their effect on the material and solar cell efficiencies are described. A correlation between ef.ciency and the two most important process parameters, i.e., growth rate and process temperature is carried out. Finally, the application of these poly Si cells in multijunction cell structures and the best efficiencies worldwide by various deposition techniques are discussed.

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플라즈마 산화와 암모니아 SCR 복합탈질공정의 엔진적용 연구 (A Study on a Combined DeNOx Process of Plasma Oxidation and $NH_3$ SCR for Diesel Engine)

  • 송영훈;이재옥;차민석;김석준;류정인
    • 한국연소학회지
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    • 제12권4호
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    • pp.39-46
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    • 2007
  • The technique of $NH_3$ SCR (selective catalytic reduction) assisted by plasma oxidation has been applied to a 2,000 cc diesel engine. The present combined $deNO_x$ process consists of two steps. The first step is that about 50% of emitted NO from the engine is oxidized to $NO_2$ in a plasma oxidation process. The second step is that NO and $NO_2$ are simultaneously reduced to $N_2$ in the $NH_3$ SCR process. The engine test results showed that the $deNO_x$ rates of the present combined process are higher than those of conventional SCR process by 20%. Such a high performance of the combined process is noticeable especially, when the exhaust temperature are relatively low, i.e., $170-220^{\circ}C$. To provide a feasibility of the present technique the effects of operating conditions, such as an electrical input energy, an exhaust gas temperature, an initial NO concentration, and the amount of hydrocarbon addition, were discussed.

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Characterization of In-Situ Film Thickness and Chamber Condition of Low-K PECVD Process with Impedance Analysis

  • Kim, Dae Kyoung;Jang, Hae-Gyu;Kim, Yong-Tae;Kim, Hoon-Bae;Chae, Hee-Yeop
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2009년도 제38회 동계학술대회 초록집
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    • pp.461-461
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    • 2010
  • For a low dielectric constant inter-metal dielectric application, the low-k SiCOH film with a dielectric constant of 2.8-3.2 has been deposited by plasma-enhanced chemical vapor deposition with decamethylcyclopentasiloxane, cyclohexane, and helium which is carrier gas. In this work, we investigated chemical deposition rate, dielectric constant, characterization of plasma polymer films according to temperature(25C-200C) of substrate and change of component concentration. We measured impedance by using V-I prove during process. From experimental result, deposition rate decrease with increasing temperature. Through real time impedance analysis of chamber, we find corelation between film thickness and impedance by assuming equivalent circuit.

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Combined De-NOx Process with $NH_3$ SCR and Non-thermal Plasma Process for Removing NOx and Soot from Diesel Exhaust Gases

  • Chung, Kyung-Yul;Song, Young-Hoon;Oh, Sang-Hoon
    • Journal of Advanced Marine Engineering and Technology
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    • 제27권5호
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    • pp.657-665
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    • 2003
  • Combined De-NOx Process in which $NH_3$ SCR (Selective Catalytic Reduction) and non-thermal Plasma Process are simultaneously used, has been investigated with a pilot test facility. The pilot test facility treats the combustion flue gases exhausted from a diesel engine that generates 240 kW of electrical power. Test results show that up to 80 % of NOx (NO and NO2) can be removed at 100 - $200^{\circ}C$. None of conventional De-NOx techniques works under such low temperature range. In addition to NOx. the Pilot test results show that soot can be simultaneously treated with the present non-thermal plasma technique. The present pilot test shows that the electrical power consumption to operate the non-thermal plasma reactor is equivalent to 3 - 4 % of the electrical power generated by the diesel engine.