• Corrosion Science and Technology
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• v.6 no.1
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• pp.18-23
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• 2007

DLC coatings have been deposited onto substrate of STS 316L and Ti alloy using r.f. PACVD (plasma-assisted chemical vapor deposition) with a mixture of $C_{6}H_{6}$ and $SiH_{4}$ as the process gases. Corrosion performance of DLC coatings was investigated by electrochemical techniques (potentiodynamic polarization test and electrochemical impedance spectroscopy) and surface analysis (scanning electron microscopy). The electrolyte used in this test was a 0.89% NaCl solution of pH 7.4 at temperature $37^{\circ}C$. The porosity and protective efficiency of DLC coatings were obtained using potentiodynamic polarization test. Moreover, the delamination area and volume fraction of water uptake of DLC coatings as a function of immersion time were calculated using electrochemical impedance spectroscopy. This study provides the reliable and quantitative data for assessment of the effect of substrate on corrosion performance of Si-DLC coatings. The results showed that Si-DLC coating on Ti alloy could improve corrosion resistance more than that on STS 316L in the simulated body fluid environment. This could be attributed to the formation of a dense and low-porosity coating, which impedes the penetration of water and ions.

• Korean Journal of Materials Research
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• v.30 no.11
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• pp.573-580
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• 2020

YAG (Yttrium Aluminum Garnet, Y₃Al₅O₁₂) has excellent plasma resistance and recently has been used as an alternative to Y₂O₃ as a chamber coating material in the semiconductor process. However, due to the presence of an impurity phase and difficulties in synthesis and densification, many studies on YAG are being conducted. In this study, YAG powder is synthesized by an organic-inorganic complex solution synthesis method using PVA polymer. The PVA solution is added to the sol in which the metal nitrate salts are dissolved, and the precursor is calcined into a porous and soft YAG powder. By controlling the molecular weight and the amount of PVA polymer, the effect on the particle size and particle shape of the synthesized YAG powder is evaluated. The sintering behavior of the YAG powder compact according to PVA type and grinding time is studied through an examination of its microstructure. Single phase YAG is synthesized at relatively low temperature of 1,000 ℃ and can be pulverized to sub-micron size by ball milling. In addition, sintered YAG with a relative density of about 98 % is obtained by sintering at 1,650 ℃.

• Journal of the Semiconductor & Display Technology
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• v.13 no.4
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• pp.15-20
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• 2014

The fracture analysis of $SiN_x$ layers, which were deposited by low-temperature plasma enhanced chemical vapor deposition (LT-PECVD) and could be used for an encapsulation layer of a flexible organic light emitting display (OLED), was performed by an electrical method. The specimens of metal-insulator-metal (MIM) structure were prepared using Pt and ITO electrodes. We stressed MIM specimen mechanically by bending outward with a bending radius of 15mm repeatedly and measured leakage current through the top and bottom electrodes. We also observed the cracks, were generated on surface, by using optical microscope. Once the cracks were initiated, the leakage current started to flow. As the amount of cracks increased, the leakage current was also increased. By correlating the electrical leakage current in the MIM specimen with the bending times, the amount of cracks in the encapsulation layer, generated during the bending process, was quantitatively estimated and fracture behavior of the encapsulation layer was also closely investigated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.71-72
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• 2006

We report on plasma damage free chemical vapor deposition technique for the thin film passivation of organic light emitting diodes (OLEDs), organic thin film transistor (OTFT) and flexible displays using catalyzer enhanced chemical vapor deposition (CECVD). Specially designed CECVD system has a ladder-shaped tungsten catalyzer and movable electrostatic chuck for low temperature deposition process. The top emitting OLED with thin film $SiN_x$ passivation layer shows electrical and optical characteristics comparable to those of the OLED with glass encapsulation. This indicates that the CECVD technique is a promising candidate to grow high-quality thin film passivation layer on OLED, OTFT, and flexible displays.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.05a
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• pp.142-145
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• 2004

In this work, we have investigated the application of rapid thermal processing (RTP) and plasma enhanced chemical vapour deposition (PECVD) for surface passivation. Rapid thermal oxidation (RTO) has sufficiently low surface recombination velocities (SRV) $S_{eff}$ in spite of a thin oxides and short process time. The effective lifetime is increasing with an increase of the oxide thickness. In the same oxide thickness, The effective lifetime is independent on the process temperature and time. $S_{eff,max}$ is exponentially decreased with increasing oxide thickness. $S_{eff,max}$ can be reduced to 200 cm/s with only 10 nm oxide thickness. On the other hand, three different types of SiN are reviewed. SiN1 layer has a thickness of about 72 nm and a refractive index of 2.8. Also, The SiN1 has a high passivation quality. The effective lifetime and SRV of 1 $\Omega$ cm Float zone (FZ) silicon deposited with SiN1 is about 800 s and under 10 cm/s, respectively. The SiN2 is optimized for the use as an antireflection layer since a refractive index of 2.3. The SiN3 is almost amorphous silicon caused by less contents of N2 from total process. The effective lifetime on the FZ 1 ${\Omega}cm$ is over 1000 ${\mu}s$.

• Applied Chemistry for Engineering
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• v.10 no.1
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• pp.105-111
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• 1999

When the preparation method of iron silicide films possess the annealing process, the interfacial state of the films is not fine. The good quality films were obtained as the plasma was used without annealing processing. Since the injected precursors were various active species in the plasma state, the organic compound was contained in the prepared films. We confirmed the formation of Fe-Si bonds as well as the organic compound by Fe and Si vibration mode in Raman scattering spectrum at $250cm^{-1}$ and Ft-IR. Because of epitaxy growth being progressed by the high energy of plasma at the low temperature of substrate, iron silicide was epitaxially grown to ${\beta}$-phase that had lattice structure such as [220]/[202] and [115]. Band gap of the prepared films had value of 1.182~1.174 eV and optical gap energy was shown value of 3.4~3.7 eV. The Urbach tail and the sub-band-gap absorptions were appeared by organic compound in films. We knew that the prepared films by plasma were obtained a good quality films because of being grown single crystal.

• Journal of the Microelectronics and Packaging Society
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• v.8 no.2
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• pp.31-36
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• 2001

Teflon-like fluorocarbon thin film was deposited by using difluoromethane$(CH_2F_2$) added with Ar, $O_2$, and $CH_4$ on Si, $SiO_2$, TEOS, and Al substrate. The deposited thin film was characterized by static contact angles for measuring hydrophobicity in various additive gas ratio. temperature, and working pressure. In case of addition with Ar, the static contact angles decreased as additive gas ratio and power increased. But the static contact angles increased as working pressure increased. Specially, super-hydrophobic surface was obtained using the powder-like fluorocarbon thin film above 2 Torr. Added with $O_2$, the static contact angles decreased as the $O_2$ ratio and working pressure increased. And the static contact angles did not change in 100W, but hydrophilic surface was obtained at 200W. In case of addition of CE$_4$, static contact angles dramatically increased in $CH_4/CH_2F_2$ ratio 5. And continuous static contact angles obtained above ratio 5. As compare with previous experiments by thermal evaporation, the fluorocarbon thin film by plasma polymerization was obtained very low hysteresis. This results shows more homogenous surface by plasma polymerization than thermal evaporation process.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.6
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• pp.470-475
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• 2009

We deposited $Al_2O_3$ thin films on GaN by remote plasma atomic layer deposition (RPALD) technique, trimethylaluminum(TMA) and oxygen were used as precursors, at fixed process condition, the number of cycle were changed. Growth rate per cycle was $1.2\;{\AA}$/cycle. and Growth rate was in proportion to a number of cycle, the GaN MIS capacitors that $Al_2O_3$ thin film were deposited above 12 nm, have excellent electrical properties, a low electrical leakage current density(${\sim}10^{-10}\;A/cm^2$ at 1.5 MV), but below 12 nm, we can see the degradation of the leakage current density. After post deposition annealing, Dielectric constant was estimated by 1 MHz high-frequency C-V method, it was varied with the anealing temperature from 6.9 at no post anealed to 7.6 at $800^{\circ}C$, and we can see a improvement of the leakage current density and breakdown voltage by post deposition anealing below $700^{\circ}C$, but, after anealed at $800^{\circ}C$, we can see the degradation of the leakage current density and breakdown voltage.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.229-229
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• 2010

With the scaling down of ultra large integrated circuits (ULSI) to the sub-50 nm technology node, the need for an ultra-thin, continuous and conformal diffusion barrier and Cu seed layer is increasing. However, diffusion barrier and Cu seed layer formation with a physical vapor deposition (PVD) method has become difficult as the technology node is reduced to 30 nm and beyond. Recent work on self-forming barrier processes using PVD Cu alloys have attracted great attention due to the capability of conformal ultra-thin barrier formation using a simple technique. However, as in the case of the conventional barrier and Cu seed layer, PVD of the Cu alloy seed layer will eventually encounter the difficulty in conformal deposition in narrow line trenches and via holes. Atomic layer deposition (ALD) has been known for its good step coverage and precise thickness control, and is a candidate technique for the formation of a thin conformal barrier layer and Cu seed layer. Conformal Cu-Mn seed layers were deposited by plasma enhanced atomic layer deposition (PEALD) at low temperature ($120^{\circ}C$), and the Mn content in the Cu-Mn alloys were controlled form 0 to approximately 10 atomic percent with various Mn precursor feeding times. Resistivity of the Cu-Mn alloy films decreased by annealing due to out-diffusion of Mn atoms. Out-diffused Mn atoms were segregated to the surface of the film and interface between a Cu-Mn alloy and $SiO_2$, resulting in self-formed $MnO_x$ and $MnSi_xO_y$, respectively. No inter-diffusion was observed between Cu and $SiO_2$ after annealing at $500^{\circ}C$ for 12 h, indicating an excellent diffusion barrier property of the $MnSi_xO_y$. The adhesion between Cu and $SiO_2$ was enhanced by the formation of $MnSi_xO_y$. Continuous and conductive Cu-Mn seed layers were deposited with PEALD into 32 nm $SiO_2$ trench, enabling a low temperature process, and the trench was perfectly filled using electrochemical plating (ECD) under conventional conditions. Thus, it is the resultant self-forming barrier process with PEALD Cu-Mn alloy film as a seed layer for plating Cu that has further potential to meet the requirement of the smaller than 30 nm node.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.12 no.9
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• pp.1615-1622
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• 2008

We have fabricated the poly-silicon thin film transistor(TFT) which has the LDD-region with graded spacer. The devices of n-channel poly-si TFT's hydrogenated by $H_2$ and $H_2$/plasma processes were fabricated for the devices reliability. We have biased the devices under the gate voltage stress conditions of maximum leakage current. The parametric characteristics caused by gate voltage stress conditions in hydrogenated devices are investigated by measuring/analyzing the drain current, leakage current, threshold voltage($V_{th}$), sub-threshold slope(S) and transconductance($G_m$) values. As a analyzed results of characteristics parameters, the degradation characteristics in hydrogenated n-channel polysilicon TFT's are mainly caused by the enhancement of dangling bonds at the poly-Si/$SiO_2$ interface and the poly-Si grain boundary due to dissolution of Si-H bonds. The structure of novel proposed poly-Si TFT's are the simplicities of the fabrication process steps and the decrease of leakage current by reduced lateral electric field near the drain region.