• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.510-514
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• 1997

The thin film that is electrically conductive and optically transparent is called conductive transparent thin film. ITO(Indium-Tin Oxide) which is a kind of conductive transparent thin film has been widely used in solar cell, transparent electrical heater, selective optical filter, FDP(Flat Display Panel) such as LCD(Liquid Crystal Display), PDP(Plasma Display Panel) and so on. Especially in PDP, ITO films is used as a transparent electrode in order to maintain discharge and decrease consumption power through the improvement of cell structure. In this study, we prepared ITO by reactive r.f. sputtering with indium-tin(Sn 10wt%) alloy target instead of indium-tin oxide target. The ITO films deposited at low temperature 15$0^{\circ}C$ and 8% $O_2$. Partial pressure showed about 3.6 Ω/$\square$. At the end of firing, the resistance of ITO was decreased, the optical transparence was improved above 90%.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.66 no.6
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• pp.962-967
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• 2017

The Diamond-Like-Carbon (DLC) coating is a new carbon-based amorphous material. Carbon ions in the plasma are electrically accelerated and collide with the substrate to form a thin film. This film has similar properties to diamonds such as high surface hardness, low coefficient of friction, corrosion resistance and durability that do not react with acids and bases. Also, since there is no thermal deformation, it can be printed at room temperature. and coated on almost all materials such as paper, polymer, ceramics and various metals even aspheric lens it is possible to mirror surface coating with excellent surface roughness. In this paper, we have analyzed the DLC film formed by Filtered Arc Ion Plating (Filtered AIP) process.

• Korean Journal of Food Science and Technology
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• v.3 no.1
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• pp.29-36
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• 1971

When a low-temperature treatment was given to a small sweet pepper variety Zairaisisi, the seed browning effect appeared soon. This change attracted the studies to determine and discuss the browning metabolites, polyphenolic compounds, and changes in their between-step components. (1) Chlorogenic acids were found as a polyphenolic compound in seed, whereas no flavanol-type polyphenol was observed. (2) There was sharp increase in total polyphenol content and chlorogenic acid with a low-temperature treatment. The contents of these substrates dropped below that of room-temperature treatment after the browning effect took place. (3) A marked increase in between-step metabolites phenylalanine, tyrosine, shikimic acid contents, and thus assumed activated shikimate pathway in this process. (4) It was suggested by determining the effect of specific metabolic inhibition and respiratory inhibitor administrations on enzymes that active biosynthesis of polyphenolic compounds takes place in shikimate pathway with combination of phosphoenolpyruvate and erythrose-4-phosphate connected to TCA cycle jaming after an active EMP pathway was gone through with sugars in pepper seeds at a low-temperature. (5) It was also suggested from the observation of increased K ion flow-out in pepper seeds with a low-temperature treatment that there is an abnormality in the plasma membrance.

• Journal of the Korean Vacuum Society
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• v.15 no.6
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• pp.563-575
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• 2006

Ti(C,N) films are synthesized by pulsed DC plasma enhanced chemical vapor deposition (PEMOCVD) using metal-organic compounds of tetrakis diethylamide titanium at $200-300^{\circ}C$. To compare plasma parameter, in this study, $H_2$ and $He/H_2$ gases are used as carrier gas. The effect of $N_2\;and\;NH_3$ gases as reactive gas is also evaluated in reduction of C content of the films. Radical formation and ionization behaviors in plasma are analyzed in-situ by optical emission spectroscopy (OES) at various pulsed bias voltages and gas species. He and $H_2$ mixture is very effective in enhancing ionization of radicals, especially for the $N_2$. Ammonia $(NH_3)$ gas also highly reduces the formation of CN radical, thereby decreasing C content of Ti(C, N) films in a great deal. The microhardness of film is obtained to be $1,250\;Hk_{0.01}\;to\;1,760\;Hk_{0.01}$ depending on gas species and bias voltage. Higher hardness can be obtained under the conditions of $H_2\;and\;N_2$ gases as well as bias voltage of 600 V. Hf(C, N) films were also obtained by pulsed DC PEMOCYB from tetrakis diethyl-amide hafnium and $N_2/He-H_2$ mixture. The depositions were carried out at temperature of below $300^{\circ}C$, total chamber pressure of 1 Torr and varying the deposition parameters. Influences of the nitrogen contents in the plasma decreased the growth rate and attributed to amorphous components, to the high carbon content of the film. In XRD analysis the domain lattice plain was (111) direction and the maximum microhardness was observed to be $2,460\;Hk_{0.025}$ for a Hf(C,N) film grown under -600 V and 0.1 flow rate of nitrogen. The optical emission spectra measured during PEMOCVD processes of Hf(C, N) film growth were also discussed. $N_2,\;N_2^+$, H, He, CH, CN radicals and metal species(Hf) were detected and CH, CN radicals that make an important role of total PEMOCVD process increased carbon content.

• Journal of the Korean Vacuum Society
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• v.22 no.5
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• pp.238-244
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• 2013

Doping process using laser is an important process in fabrication of solar cell for heat treatment. However, the process of using the furnace is difficult to form a selective emitter doping region. The case of using a selective emitter laser doping is required an expensive laser equipment and induce the wafer's structure damage due to high temperature. This study, we fabricated a new costly plasma source. Through this, we research the selective emitter doping. We fabricated that the atmospheric pressure plasma jet injected Ar gas is inputted a low frequency (a few tens kHz). We used shallow doping wafers existing PSG (Phosphorus Silicate Glass) on the shallow doping CZ P-type wafer. Atmospheric plasma treatment time was 15 s and 30 s, and current for making the plasma is 40 mA and 70 mA. We investigated a doping profile by using SIMS (Secondary Ion Mass Spectroscopy) and we grasp the sheet resistance of electrical character by using doping profile. As result of experiment, prolonged doping process time and highly plasma current occur a deeper doping depth, moreover improve sheet resistance. We grasped the wafer's surface damage after atmospheric pressure plasma doping by using SEM (Scanning Electron Microscopy). We check that wafer's surface is not changed after plasma doping and atmospheric pressure doping width is broaden by increase of plasma treatment time and current.

• Journal of Korean Society of Environmental Engineers
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• v.37 no.8
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• pp.492-497
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• 2015

VOCs (Volatile Organic Compounds) are generally generated in the painting process, or at the company and laundry where use organic solvents. The VOCs consist of various hydrocarbons and has low calorific value due to its dilution with atmospheric air. Therefore, the VOCs are difficult to burn by a conventional fuel combustor. In this study, a novel plasma dump combustor was proposed for the treatment of low calorific VOC gases. This combustor was designed a combination of the characteristics in a plasma burner, a dump combustor and a 3D matrix burner. The combustor has good structure for maintaining enough residence time and reaction temperature for stable flame formation and VOC destruction. For investigating the performance characteristics of the plasma dump combustor, an experiment was achieved for VOC feed rate, VOC injector position, etc. Toluene was used as a surrogate of VOC. The novel combustor gave better performance than a conventional combustor, showing that VOC destruction rate and energy efficiency were 89.64% and 12.27 kg/kWh respectively, at feeding rate of 450 L/min of VOC of 3,000 ppm of toluene concentration.

• Applied Chemistry for Engineering
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• v.27 no.1
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• pp.92-100
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• 2016

Low-temperature conversion of nitrogen oxides using plasma-assisted hydrocarbon selective catalytic reduction of (HC-SCR) was investigated. Plasma was created in the catalyst-packed bed so that it could directly interact with the catalyst. The effect of the reaction temperature, the shape of catalyst, the concentration of n-heptane as a reducing agent, the oxygen content, the water vapor content and the energy density on $NO_x$ removal was examined. $NO_x$ conversion efficiencies achieved with the plasma-catalytic hybrid process at a temperature of $250^{\circ}C$ and an specific energy input (SIE) of $42J\;L^{-1}$ were 83% and 69% for one-dimensional Ag catalyst ($Ag\;(nanowire)/{\gamma}-Al_2O_3$) and spherical Ag catalyst ($Ag\;(sphere)/{\gamma}-Al_2O_3$), respectively, whereas that obtained with the catalyst-alone was considerably lower (about 30%) even with $Ag\;(nanowire)/{\gamma}-Al_2O_3$ under the same condition. The enhanced catalytic activity towards $NO_x$ conversion in the presence of plasma can be explained by the formation of more reactive $NO_2$ species and partially oxidized hydrocarbon intermediates from the oxidation of NO and n-heptane under plasma discharge. Increasing the SIE tended to improve $NO_x$ conversion efficiency, and so did the increase in the n-heptane concentration; however, a further increase in the n-heptane concentration beyond $C_1/NO_x$ ratio of 5 did not improve the $NO_x$ conversion efficiency any more. The increase in the humidity affected negatively the $NO_x$ conversion efficiency, resulting in lowering the $NO_x$ conversion efficiency at the higher water vapor content, because water molecules competed with $NO_x$ species for the same active site. The $NO_x$ conversion efficiency increased with increasing the oxygen content from 3 to 15%, in particular at low SIE values, because the formation of $NO_2$ and partially oxidized hydrocarbon intermediates was facilitated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.302-305
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• 1995

ITO(indium tin oxide) that is both conductive in electricity and transparent to the visible ray is called transparent conducting thin film. Nowaday, according to the development of flat panel display such as LCD(Liquid Crystal display, EL(electolumine- scence display), PDP(plasma display panel), ECD(electrocromic display), the higher quality in the low temperature process has been asked to reduce the production cost and to have a good uniformity on a large substrate. In this study, we prepared indium tin oxide(ITO) by a cylindrical DC magnetron sputtering with Indium-tin (9:1) alloy target instead of indium-tin oxide target. To reduce the defact in ITO, the effect on ITO by varing the magnetic field intensity and the applied voltage ares studied. the resistivity of the film deposited in oxygen partial pressure of 5% and substrate temperature of 140$^{\circ}C$. is 1.6${\times}$10$\^$-1/$\Omega$$.$cm with 85% optical transmission in viaible ray.

• Journal of Powder Materials
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• v.28 no.5
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• pp.403-409
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• 2021

In this study, Ti-Mo-EB composites are prepared by ball milling and spark plasma sintering (SPS) to obtain a low elastic modulus and high strength and to evaluate the microstructure and mechanical properties as a function of the process conditions. As the milling time and sintering temperature increased, Mo, as a β-Ti stabilizing element, diffused, and the microstructure of β-Ti increased. In addition, the size of the observed phase was small, so the modulus and hardness of α-Ti and β-Ti were measured using nanoindentation equipment. In both phases, as the milling time and sintering temperature increased, the modulus of elasticity decreased, and the hardness increased. After 12 h of milling, the specimen sintered at 1000℃ showed the lowest values of modulus of elasticity of 117.52 and 101.46 GPa for α-Ti and β-Ti, respectively, confirming that the values are lower compared to the that in previously reported studies.

• Journal of the Korean Ceramic Society
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• v.40 no.6
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• pp.560-565
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• 2003

M-doped (M=Al, Ni) ZnO thermoelectric materials were fully densified at low temperatures of 800∼1,000$^{\circ}C$ and their sintering characteristics and microstructural features were investigated. Electron microscopic analysis showed that the addition of NiO promoted tile formation of solid solution and caused actively grain growth. The addition of A1$_2$O$_3$ prevented the evaporation of pure ZnO at grain boundaries and suppressed the grain growth by the formation of secondary phase. In case of the addition of A1$_2$O$_3$ together with NiO, the specimen showed an excellent microstructure and also the SEM-EBSP (Electron Back-scattered Diffraction Pattern) analysis confirmed that it shows a superior grain boundary distribution to the others specimens. These microstructural characteristics induced by the addition of A1$_2$O$_3$ together with NiO may increase the electrical conductivity by the increase in carrier concentration and decrease the thermal conductivity by the phonon scattering effect and, consequently, improve the thermoelectric property.