• Title/Summary/Keyword: low oxygen pressure

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Superconducting properties of Bi-2223 tapes with various pre-annealing conditions (전열처리 조건에 따른 Bi-2223 초전도 선재에서의 특성 변화)

  • 하동우;하홍수;오상수;이동훈;윤진국;양주생;최정규;권영길
    • Progress in Superconductivity
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    • v.4 no.2
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    • pp.176-179
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    • 2003
  • A lot of efforts have been focused on the optimization of PIT parameters for Bi-2223/Ag wire. Bi-2223 superconducting wires with 55 filaments were fabricated by stacking, drawing process. Before rolling process, round wires were pre -annealed at 760 - 820 $^{\circ}C$ and low oxygen partial pressure. We confirmed that pre-annealing step was to transform Bi-2212 orthorhombic structure from Bi-2212 tetragonal structure and to reduce the formation of second phases. However Bi-2223 phases also were formed at higher than 76$0^{\circ}C$ of pre-annealing temperature. The engineering critical current densities (Je) of Bi-22231Ag tapes were sintered at low oxygen partial pressure were higher than t hat of the wires sintered at air. We could achieve 6500 A/${cm}^2$ of Je for the tape that was initially kept at slightly higher temperature than that of normal heat treatment.

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Production of High Purity Oxygen by Combination of Membrane and PSA Methods (분리막과 PSA혼합법에 의한 고순도 산소의 제조)

  • Hwang, Sun-Tak
    • Membrane Journal
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    • v.4 no.1
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    • pp.1-8
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    • 1994
  • There are growing needs to produce relatively high purity(99.0% or higher) oxygen at low cost. For small scale production, both pressure swing adsorption(PSA) and membrane process are competitive and less expensive or more convenient than well known cryogenic fractionation technology. A continuous membrane column(CMC) combined with a PSA oxygen generator can be employed to produce high purity oxygen continuously. The oxygen enriched gas generated by a PSA unit, with a concentration of 93~94%, is fed to the CMC that consism of three modules of poly(imide) hollow fibers. Several experiments were conducted by varying parameters, such as feed flow rate, transmembrane pressure drop, stage cut, and feed location in order to obtain a high oxygen concentration above 99.0%. A two-series unit mode was also employed with CMC operation to optimize the given membrane area.

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Production of High Purity Oxygen by Conbination of Membrane and PSA Methods

  • Hwang, Sun-Tak
    • Proceedings of the Membrane Society of Korea Conference
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    • 1994.03a
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    • pp.1-21
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    • 1994
  • There are growing needs to produce relatively high purity (99.0% or higher) oxygen at low cost. For small scale production, both pressure swing adsorption (PSA) and membrane process are competitve and less expensive or more convient than well known crygenic fractionation technology. A continuous membrane colume (CMC) combined with a PSA oxygen generator can be employed to produce high purity oxygen continuosly. The oxygen-enriched gas generated by a PSA unit, with a concentration of 93-94%, is fed to the CMC that consists of three modules of poly(imide) hollow fibers. Several experiments were conducted by varying parameters, such feed flow rate, transmenbrane pressure drop, stage cut, and feed location in order to obtain a high oxygen concentration above 99.0%. A two-series unit mode was also employed with CMC operation to optimize the given membrane area.

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Development of High Performance Intake Silencer Using Swirling Flow for Household Oxygen Generators (가정용 산소발생기를 위한 스월링 유동을 이용한 고성능 흡기 소음기 개발)

  • Kim, Seong-Hun;Lee, Gwang-Se;Choi, Yong-Bok;Cheong, Cheolung
    • Transactions of the Korean Society for Noise and Vibration Engineering
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    • v.24 no.11
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    • pp.846-853
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    • 2014
  • High performance intake silencer with low pressure drop are developed for a household oxygen generator. First, the acoustic power of the target oxygen generator are experimentally evaluated according to ISO code. Then, the transmission loss of and the flow characteristics inside the existing intake silencer are predicted and analyzed. On a basis of these results, two intake silencers are proposed, which are designed to induce the swirling flow inside the intake silencer and thus to reduce the flow loss. The predicted TL and the pressure drop for these two new silencers are compared to the existing one, which shows that the proposed ones have higher TL as well as low pressure drop. The reason for these improvements are explained by investigating the flow characteristics of the new silencers in detail.

A Study on the Conductivity of Polycrystalline Semiconductor Nickel Oxide (NiO의 Semiconductivity에 關한 硏究)

  • Choi Jae Shi
    • Journal of the Korean Chemical Society
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    • v.12 no.2
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    • pp.38-38
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    • 1968
  • The conductivity of polycrystalline NiO is measured in the temperature range of $200^{\circ}C\; to\; 800^{\circ}C$ under oxygen pressures from $1.52{\times}10^2\; mmHg\; to\; 10^{-4}$ mmHg. The plots of the log ${\sigma}$ vs 1/T at constant oxygen pressure are found to be linear and the activation energies obtained from the slopes of these plots show that the energies are greater under high oxygen pressure than under low pressure. The transition points are found from the curves. The dependence of the conductivity on the $O_2$ pressure, in the above temperature range, is to be regular but it does not obey the theoretical expression, i.e.${\sigma}σ = K_{ox}P^{1/6}.$ The activation energies are calculated from the curves at the various condition.

A Study on the Conductivity of Polycrystalline Semiconductor Nickel Oxide (NiO의 Semiconductivity에 關한 硏究)

  • Choi, Jae-Shi;Yo, Chul-Hyun
    • Journal of the Korean Chemical Society
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    • v.12 no.2
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    • pp.39-43
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    • 1968
  • The conductivity of polycrystalline NiO is measured in the temperature range of $200^{\circ}C\;to\;800^{\circ}C$ under oxygen pressures from $1.52{\times}10^2\;mmHg\;to\;10^{-4}$ mmHg. The plots of the log ${\sigma}$ vs 1/T at constant oxygen pressure are found to be linear and the activation energies obtained from the slopes of these plots show that the energies are greater under high oxygen pressure than under low pressure. The transition points are found from the curves. The dependence of the conductivity on the $O_2$ pressure, in the above temperature range, is to be regular but it does not obey the theoretical expression, i.e. ${\sigma}=K_{ox}P^{1/6}.$ The activation energies are calculated from the curves at the various condition.

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A Study of the Semiconductivity of Polycrystalline Cuprous Oxide (다결정 산화구리의 반도성에 관한 연구)

  • Choi, Jae-Shi;Yo, Chul-Hyun
    • Journal of the Korean Chemical Society
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    • v.16 no.2
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    • pp.74-79
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    • 1972
  • The semiconductivity of polycrystalline $Cu_2O$ has been studied between $220^{\circ}C$ and $680^{\circ}C under partial pressures of oxygen from $4.06{\times}10^{-3}\;to\;10^{-5 }\;mmHg$. The plots of log conductivity vs 1/T at constant oxygen pressure were found to be linear, and the activation energies obtained from the slopes of these plots above the first transition point showed that the energies were greater under high oxygen pressure than under low pressure. The transition points between the stable range and the unstable range of $Cu_2O$ were found from the curves. The dependence of the semiconductivity on the $O_2$ pressure, in the above temperature range, is shown hysteresis.

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Growth and Electrical Characteristics of Ultrathin $SiO_2$ Film Formed in an Electron Cyclotron Resonance Oxygen Plasma (ECR 산소 플라즈마에 의한 $SiO_2$ 박막의 성장 거동 및 전기적 특성)

  • 안성덕;이원종
    • Journal of the Korean Ceramic Society
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    • v.32 no.3
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    • pp.371-377
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    • 1995
  • Silicon oxide films were grown on single-crystal silicon substrates at low temperatures (25~205$^{\circ}C$) in a low pressure electron cyclotron resonance (ECR) oxygen plasma. The growth rate of the silicon oxide film increased as the temperature increased or the pressure decreased. Also, the thickness of the silicon oxide film increased at negative bias voltage, but not changed at positive bias voltage. The growth law of the silicon oxide film was approximated to the parabolic form. Capacitance-voltage (C-V) and current density-electric field (J-E) characteristics were studied using Al/SiO2/p-Si MOS structures. For a 10.2 nm thick silicon oxide film, the leakage current density at the electric field of 1 MVcm-1 was less than 1.0$\times$10-8Acm-2 and the breakdown field was higher than 10 MVcm-1. The flat band voltage of Al/SiO2/p-Si MOS capacitor was varied in the range of -2~-3 V and the effective dielectric constant was 3.85. These results indicate that high quality oxide films with properties that are similar to those of thermal oxide film can be fastly grown at low temperature using the ECR oxygen plasma.

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A Study on Combustion Characteristics of the High Pressure Diesel Engine in Closed Cycle System (폐회로 시스템에서 고압 디젤엔진의 연소특성에 관한 연구)

  • 김인교;박신배
    • Journal of Advanced Marine Engineering and Technology
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    • v.26 no.4
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    • pp.457-463
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    • 2002
  • The closed cycle diesel engine is used in a closed circuit system which has no air breathing. The working fluid as intake mixture are consisted of oxygen, argon and recirculated exhaust gas in order to obtain underwater or underground power sources. In the present study, the high pressure diesel engine which can be operated by the closed cycle system with high intake pressure for increasing the net power rate is designed. It has been carried out to investigate the combustion characteristics of high pressure diesel engine according to the power rate. The maximum cylinder pressure and heat release rate were investigated. Also, major experimental data such as specific fuel consumption rate, oxygen concentrations, fuel conversion efficiency, polytropic exponent, and IMEP were compared with low pressure diesel engine experimental data.

Oxygen Diffusion and Point Defects in Single Crystal Rutile (Rutile 단결정에서 산소의 확산과 점결합)

  • 김명호;박주석;변재동
    • Journal of the Korean Ceramic Society
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    • v.28 no.12
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    • pp.989-995
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    • 1991
  • By means of the secondary ion mass spectrometer, the tracer diffusion of oxygen in rutile single crystal was measured as function of temperature and oxygen partial pressure. The tracer diffusivity was determined from the depth profile of 18O. The Po2 dependence of D suggests that the dominant defects in TiO2-y are oxygen vacancies (V{{{{ { ‥} atop { o} }}) and interstitial titanium ions (Ti{{{{ {‥‥} atop {i} }}). The doubly ionized oxygen vacancies are prominent at low temperature and Po2. However, the tetravalent interstitial titanium ions predominate at teperature above 120$0^{\circ}C$.

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