• Korean Journal of Exercise Nutrition
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• v.24 no.2
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• pp.30-37
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• 2020

[Purpose] The present study investigated the effect of endurance exercise with blood flow restriction (BFR) performed at either 25% maximal oxygen uptake (${\dot{V}}O_2$ max) or 40% ${\dot{V}}O_2$ max) on muscle oxygenation, energy metabolism, and endocrine responses. [Methods] Ten males were recruited in the present study. The subjects performed three trials: (1) endurance exercise at 40% ${\dot{V}}O_2$ max without BFR (NBFR40), (2) endurance exercise at 25% ${\dot{V}}O_2$ max with BFR (BFR25), and (3) endurance exercise at 40% ${\dot{V}}O_2$ max with BFR (BFR40). The exercises were performed for 15 min during which the pedaling frequency was set at 70 rpm. In BFR25 and BFR40, 2 min of pressure phase (equivalent to 160 mmHg) followed by 1 min of release phase were repeated five times (5 × 3 min) throughout 15 minutes of exercise. During exercise, muscle oxygenation and concentration of respiratory gases were measured. The blood samples were collected before exercise, immediately after 15 min of exercise, and at 15, 30, and 60 minutes after completion of exercise. [Results] Deoxygenated hemoglobin (deoxy-Hb) level during exercise was significantly higher with BFR25 and BFR40 than that with NBFR40. BFR40 showed significantly higher total-hemoglobin (total-Hb) than NBFR40 during 2 min of pressure phase. Moreover, exercise-induced lactate elevation and pH reduction were significantly augmented in BFR40, with concomitant increase in serum cortisol concentration after exercise. Carbohydrate (CHO) oxidation was significantly higher with BFR40 than that with NBFR40 and BFR25, whereas fat oxidation was lower with BFR40. [Conclusion] Deoxy-Hb and total Hb levels were significantly increased during 15 min of pedaling exercise in BFR25 and BFR40, indicating augmented local hypoxia and blood volume (blood perfusion) in the muscle. Moreover, low-and moderate-intensity exercise with BFR facilitated CHO oxidation.

• Proceedings of the Korea Society for Energy Engineering kosee Conference
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• 2002.11a
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• pp.171-184
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• 2002

Approx. 200,000 bpd vacuum residue oil is produced from oil refineries in Korea. These are supplying to use asphalt, high sulfur fuel oil, and upgrading at the residue hydro-desulfurization unit. Vacuum residue oil has high energy content, however high sulfur content and high concentration of heavy metals represent improper low grade fuel. To meet growing demand for effective utilization of vacuum residue oil from refineries, recently some of the oil refinery industries in Korea, such as SK oil refinery and LG Caltex refinery, have already proceeded feasibility study to construct 435-500 MWe IGCC power plant and hydrogen production facilities. Recently, KIER(Korea Institute of Energy Research) are studing on the Vacuum Residue gasification process using an oxygen-blown entrained-flow gasifier. The experiment runs were evaluated under the reaction temperature : 1,100~1,25$0^{\circ}C$, reaction pressure : 1~6kg/$\textrm{cm}^2$G, oxygen/V.R ratio : 0.8~0.9 and steam/V.R ratio : 0.4-0.5. Experimental results show the syngas composition(CO+H$_2$) : 85~93%, syngas flow rate : 50~110Mm$^3$/hr, heating value : 2,300~3,000 ㎉/Nm$^3$, carbon conversion : 65~92, cold gas efficiency : 60~70%. Also equilibrium modeling was used to predict the vacuum residue gasification process and the predicted values were compared reasonably well with experimental data.

• Journal of Energy Engineering
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• v.12 no.1
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• pp.49-57
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• 2003

Approx. 200.000 bpd vacuum residue oil is produced from oil refineries in Korea, and is supplied to use asphalt, high sulfur fuel oil and for upgrading at the residue hydro-desulfurization unit. Vacuum residue oil has high energy content, however its high sulfur content and high concentration of heavy metals represent improper low grade fuel. To meet growing demand for effective utilization of vacuum residue oil from refineries, recently some of the oil refinery industries in Korea, such as SK oil refinery and LG Caltex refinery, have already proceeded feasibility study to construct 435~500 MWe IGCC power plant and hydrogen production facilities. Recently, KIER (Korea Institute of Energy Research) are studying on the Vacuum Residue gasification process using an oxygen-blown entrained-flow gasifier. The experiment runs were evaluated under the reaction temperature: 1.100~l,25$0^{\circ}C$, reaction pressure: 1~6 kg/$\textrm{cm}^2$G, oxygen/V.R ratio: 0.8~0.9 and steam/V.R ratio: 0.4~0.5. Experimental results show the syngas composition (CO+H$_2$): 85~93%, syngas flow rate: 50~l10 Nm$^3$/hr, heating value: 2,300~3,000 k㎈/Nm$^3$, carbon conversion: 65~92, cold gas efficiency: 60~70%. Also equilibrium modeling was used to predict the vacuum residue gasification process and the predicted values were compared reasonably well with experimental data.

• Journal of the Korean Chemical Society
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• v.28 no.3
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• pp.149-154
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• 1984

The electrical conductivity of p-type yttrium sesquioxide has been measured as a function of temperature and of oxygen partial pressure at temperatures from 650 to 1050$^{\circ}C$C and oxygen partial pressures from $1 {\times}10^{-5}\;to\;2{\times}10^{-1}$atm. Plots of log conductivity vs. 1/T at constant oxygen partial pressures are found to be linear with low-and high-temperature dependences of conductivity. The high-temperature dependence of conductivity shows two different defect structures. The plots of log conductivity vs. log $Po_2$ are found to be linear at $Po_2$'s of $10^{-5}\;to\;10^{-1}$ atm. The electrical conductivity dependences on $Po_2$ are found to be ${{\sigma}{\propto}Po_2}^{1/6}$at $850{\sim}950^{\circ}C,\;{{\sigma}{\propto}Po_2}^{3/16}$ at $950{\sim}1050^{\circ}C\;and\;{{\sigma}{\propto}Po_2}^{1/7.5}{\sim}{{\sigma}{\propto}Po_2}^{1/8.3}\;at\;650{\sim}800^{\circ}C$, respectively. The defect structures are$O_i{''}$ at $850{\sim}950^{\circ}C$ and $V_M{'''}$ at $950{\sim}1050^{\circ}C$. The electron hole is main carrier type, however, ionic contribution is found at lower temperature portion.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.543-543
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• 2013

Thin-film transistors (TFTs) based on oxide semiconductors have been regarded as promising alternatives for conventional amorphous and polycrystalline silicon TFTs. Oxide TFTs have several advantages, such as low temperature processing, transparency and high field-effect mobility. Lots of oxide semiconductors for example ZnO, SnO2, In2O3, InZnO, ZnSnO, and InGaZnO etc. have been researched. Particularly, zinc-tin oxide (ZTO) is suitable for channel layer of oxide TFTs having a high mobility that Sn in ZTO can improve the carrier transport by overlapping orbital. However, some issues related to the ZTO TFT electrical performance still remain to be resolved, such as obtaining good electrical contact between source/drain (S/D) electrodes and active channel layer. In this study, the bottom-gate type ZTO TFTs with staggered structure were prepared. Thin films of ZTO (40 nm thick) were deposited by DC magnetron sputtering and performed at room temperature in an Ar atmosphere with an oxygen partial pressure of 10%. After annealing the thin films of ZTO at $400^{\circ}C$ or an hour, Cu, Mo, ITO and Ti electrodes were used for the S/D electrodes. Cu, Mo, ITO and Ti (200 nm thick) were also deposited by DC magnetron sputtering at room temperature. The channel layer and S/D electrodes were defined using a lift-off process which resulted in a fixed width W of 100 ${\mu}m$ and channel length L varied from 10 to 50 ${\mu}m$. The TFT source/drain series resistance, the intrinsic mobility (${\mu}i$), and intrinsic threshold voltage (Vi) were extracted by transmission line method (TLM) using a series of TFTs with different channel lengths. And the performances of ZTO TFTs were measured by using HP 4145B semiconductor analyzer. The results showed that the Cu S/D electrodes had a high intrinsic field effect mobility and a low effective contact resistance compared to other electrodes such as Mo, ITO and Ti.

• Journal of Korean Society for Atmospheric Environment
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• v.20 no.4
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• pp.451-463
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• 2004

The performance of disk-type catalytic filters impregnated by TiO$_2$ or TiO$_2$-3Al$_2$O$_3$ㆍ 2SiO$_2$ supports and V$_2$O$_{5}$ catalyst was evaluated for selective catalytic reduction (SCR) of NO with ammonia as a reductant. XRD, FT -IR, BET and SEM were used to characterize the catalytic filters prepared in this work. Optimal V$_2$O$_{5}$ loading and reaction temperature for V$_2$O$_{5}$/TiO$_2$ catalytic filters were 3-6 wt.% and 350-40$0^{\circ}C$ at GHSV 14,300 $hr^{-1}$ in the presence of oxygen, respectively. With increasing the V$_2$O$_{5}$ loading from 0.5 to 6 wt%, NO conversion increased from 24 to 96% at 40$0^{\circ}C$ and 14.300$hr^{-1}$, and maintained at 80% over in the V$_2$O$_{5}$ loading range of 3-6 wt.% and then dropped at V$_2$O$_{5}$ loading of 7wt.% over. In comparing V$_2$O$_{5}$/ TiO$_2$ and V$_2$O$_{5}$/ TiO$_2$-3Al$_2$O$_3$ㆍ2SiO$_2$ catalytic fillers, which have same 3wt.% V$_2$O$_{5}$ loading, the V$_2$O$_{5}$/ TiO$_2$-3A1$_2$O$_3$ㆍ2SiO$_2$ catalytic filter showed higher activity than V$_2$O$_{5}$/ TiO$_2$ catalytic filter, but higher differential pressure drops owing to its low air permeability. low air permeability.

• Journal of the Korean Ceramic Society
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• v.47 no.1
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• pp.82-85
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• 2010

Recently, thin film processes for oxides and metal deposition, such as physical vapor deposition (PVD) and chemical vapor deposition (CVD), have been widely adapted to fabricate solid oxide fuel cells (SOFCs). In this paper, we presented two research area of the use of such techniques. Gadolinium doped ceria (GDC) showed high ionic conductivity and could guarantee operation at low temperature. But the electron conductivity at low oxygen partial pressure and the weak mechanical property have been significant problems. To solve these issues, we coated GDC electrolyte with a nano scale yittria-doped stabilized zirconium (YSZ) layer via atomic layer deposition (ALD). We expected that the thin YSZ layer could have functions of electron blocking and preventing ceria from the reduction atmosphere. Yittria-doped barium zirconium (BYZ) has several orders higher proton conductivity than oxide ion conductor as YSZ and also has relatively high chemical stability. The fabrication processes of BYZ is very sophisticated, especially the synthesis of thin-film BYZ. We discussed the detailed fabrication processes of BYZ as well as the deposition of electrode. This paper discusses possible cell structure and process flow to accommodate such films.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.36 no.7
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• pp.759-765
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• 2012

This study investigates the effect of diesel combustion strategies on exhaust emissions and hydrocarbon species emissions for a 1.7 L common rail direct injection diesel engine at 1500 rpm and 3.9 bar BMEP. The first strategy is a method to adopt no EGR with a split injection composed of pilot and main injection (split injection). The second is to adopt a moderate EGR rate with main injection only (single-1). The third is to use a high level of EGR and main injection with rail pressure increase, $i.e.$ low-temperature diesel combustion (single-2). Split injection and single-1 showed a renowned phenomenon of a PM-NOx trade-off, whereas single-2 was observed of a PM-NOx trade-off to reduce PM and NOx simultaneously. HC speciation results show that the split injection produced the least amount of HC species, regardless of the carbon number bin, followed by single-1 and single-2. The ratios of methane, acetylene, and CO to THC increased as a combustion A/F ratio is richer due to reduced oxygen content in the vicinity of the combustion zone, thus enhancing pyrolysis.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.273.2-273.2
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• 2014

Sputtering process has been widely used in Si-based semiconductor industry and it is also an ideal method to deposit transparent oxide materials for thin-film transistors (TFTs). The oxide films grown at low temperature by conventional RF sputtering process are typically amorphous state with low density including a large number of defects such as dangling bonds and oxygen vacancies. Those play a crucial role in the electron conduction in transparent electrode, while those are the origin of instability of semiconducting channel in oxide TFTs due to electron trapping. Therefore, post treatments such as high temperature annealing process have been commonly progressed to obtain high reliability and good stability. In this work, the scheme of electron-assisted RF sputtering process for high quality transparent oxide films was suggested. Through the additional electron supply into the plasma during sputtering process, the working pressure could be kept below $5{\times}10-4Torr$. Therefore, both the mean free path and the mobility of sputtered atoms were increased and the well ordered and the highly dense microstructure could be obtained compared to those of conventional sputtering condition. In this work, the physical properties of transparent oxide films such as conducting indium tin oxide and semiconducting indium gallium zinc oxide films grown by electron-assisted sputtering process will be discussed in detail. Those films showed the high conductivity and the high mobility without additional post annealing process. In addition, oxide TFT characteristics based on IGZO channel and ITO electrode will be shown.

• Journal of Technologic Dentistry
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• v.23 no.1
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• pp.31-43
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• 2001

This study was performed to observe the micro-structure change of surface, behavior of oxide change of element, the component transformation of the alloy and the bonding strength between the porcelain interface in order to investigate effects of indium, tin on interfacial properties of porcelain fused to low gold alloy. Hardness of castings was measured with a micro-Vicker's hardness tester. The compositional change of the surface of heat-treated specimen was analyzed with an EDS and an EPMA. The interfacial shear bonding strength between alloy specimen and fused porcelain was measured with a mechanical testing system(MTS 858.20). The results were as follows: 1) The hardness value of alloy increased as increasing amount of indium addition. 2) The formation of oxidation increased as increasing indium and tin contents after heat treatment. 3) Diffusion of indium and tin elements increased as increasing indium and tin contents in metal-porcelain surface after porcelain fused to metal firing. 4) The most interfacial shear bonding strength was increased as increasing a composition of adding elements, and a heat-treatment time, and an oxygen partial pressure. From the results of this study it was found that the addition of alloying elements such as indium and tin increase hardness of as-cast alloy, produce surface oxide layer of adding elements by heat-treatment which may improve interfacial bonding strength between alloy and porcelain.