• Journal of the Korean Institute of Gas
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• v.19 no.6
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• pp.47-53
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• 2015

This paper is to study applying for numerical analysis method for flow field, velocity and pressure of fuel on the low pressure pump using excavator. The pressure distribution of fuel pump certified the linear variation according to rotation angle of rotor. Especially, it knew the fact that the pressure in rotation angle $40^{\circ}$ appeared high outlet and low inlet of fuel pump. Also, this range angle can seek the fact that the leakage flow and velocity are the most increasing. And the more rotor rotation of fuel pump, the more mean outlet flow rate increased in linear. Whenever the gap size decrease with rotor and housing, the discharge flow rate could seek the approaching 0.0712kg/s that consider with theory discharge flow rate calculated from displacement between rotor gear and idle gear.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1970-1971
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• 2007

The efficiency of such work highly depend on the worker's safety, who is protected by tools such as gloves, sleeves, blankets and flexible coverings among other manufactured natural-rubber goods. Use, storage and maintenance of these tools guarantee the quality and durability of the material. However, it might be observed that good tools made of such material are disapproved of when received from manufacturers or when they are removed from the warehouse for replacement. This work shows the experimental results obtained from ageing at a temperature of $100^{\circ}C$ for 48, 70 and 312 h, although the application of AC electrical tension in samples and the measuring of current leakage are presented. The measurements in samples were carried out with samples prepared from the deformulated commercial materials and respectively reformulated into thin films. The obtained results showed the mechanisms of conduction of samples in low and high electric fields. It was also identified an electric tension transition showing that in low fields it prevails the Ohm's law conduction, and in high electric fields it prevails the conduction of space charge limited current (SCLC). These results can support the natural rubber formulation process having as their main objective the reducing of the mechanisms that occur under high conduction current in high electric fields, which leads the material to a dielectric breakdown. It is necessary to research this raw material from different internationally standard clones to characterize dielectric and electric properties for industrial applications. Moreover, this natural material has a low commercial price when compared to the synthetic ones.

• Journal of Korean Vacuum Science & Technology
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• v.4 no.3
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• pp.73-77
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• 2000

Single crystal and polycrystalline Si thin films were doped with phosphorus by a 2-zone diffusion method to develop the low-resistivity polycrystalline Si electrode for a hemispherical grain. Solid phosphorus source was used in order to achieve uniformly and highly doped surface region of polycrystalline Si films having rough surface morphology. In case of 2-zone diffusion method, it is proved that the heavy doping near the surface area can be achieved even at a relatively low temperature. SIMS analysis revealed that phosphorus doping concentration in case of using solid P as a doping source was about 50 times as that of phosphine source at 750$^{\circ}C$. Also, ASR analysis revealed that the carrier concentration was about 50 times as that of phosphine. In order to evaluate the electrical characteristics of doped polycrystalline Si films for semiconductor devices, MOS capacitors were fabricated to measure capacitance of polycrystalline Si films. In ${\pm}$2 V measuring condition, Si films, doped with solid source, have 8% higher $C_{min}$ than that of unadditional doped Si films and 3% higher $C_{min}$ than that of Si films doped with $PH_3$ source. The leakage current of these films was a few fA/${\mu}m^2$. As a result, a 2-zone diffusion method is suggested as an effective method to achieve highly doped polycrystalline Si films even at low temperature.

• Journal of the Semiconductor & Display Technology
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• v.8 no.3
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• pp.19-23
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• 2009

We have studied dielectric characteristics of low-k interlayer dielectric materials was fabricated by plasma enhanced chemical vapor deposition (PECVD). BTMSM precursor was introduced with the flow rates from 24 sccm to 32 sccm by 2 sccm step in the constant flow rate of 60 sccm $O_2$. Then, SiOCH thin film deposited at room temperature was annealed at temperature of $400^{\circ}C$ and $500^{\circ}C$ for 30 minutes in vacuum. The vibrational groups of SiOCH thin films were analyzed by FT/IR absorption lines, and the dielectric constant of the low-k SiOCH thin films were obtained by measuring C-V characteristic curves. With the result that FTIR analysis, as BTMSM flow rate increase, relative carbon content of SiOCH thin film increased from 29.5% to 32.2%, and increased by 32.8% in 26 sccm specimen after $500^{\circ}C$ annealing. Dielectric constant was lowest by 2.32 in 26 sccm specimen, and decreased more by 2.05 after $500^{\circ}C$ annealing. Also, leakage current is lowest by $8.7{\times}10^{-9}A/cm^2$ in this specimen. In the result, shift phenomenon of chemical bond appeared in SiOCH thin film that BTMSM flow rate is deposited by 26 sccms, and relative carbon content was highest in this specimen and dielectric constant also was lowest value

• Journal of the Korea Institute of Information Security & Cryptology
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• v.16 no.4
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• pp.3-12
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• 2006

RFID (Radio Frequency Identification) system is expected to play a critical role providing widespread services in the ubiquitous period. However, widespread use of RFID tags may create new threats to the privacy of individuals such as information leakage and traceability. It is difficult to solve the privacy problems because a tag has the limited computing power that is not the adequate resource to support the general encryption. Although the scheme of [2] protects the consumer privacy using an external agent, a tag should compute exponential operation needed high cost. We propose Self Re-Encryption Protocol (SREP) which provides song privacy without assisting of any external agent. Our SREP is well suitable to low-cost RFID system since it only needs multiplication and exclusive-or operation.

• The Journal of the Korea Contents Association
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• v.21 no.6
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• pp.51-61
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• 2021

In the era of the 4th industrial revolution symbolized by the Internet of Things, big data and artificial intelligence, various embedded devices are increasing exponentially. These devices have communication functions despite their low specifications, so the possibility of personal information leakage is increasing, and security threats are also increasing. Embedded devices can have security issues at most levels, from hardware to services over the network. In addition, it is difficult to apply general security techniques because it has characteristics of resource constraints such as low specifications and low power, and the related technology has not been standardized. In this study, we present vulnerabilities and possible problems and considerations in applying SDN to embedded devices in consideration of structural characteristics and real-world discovered cases. This study presents vulnerabilities and possible problems and considerations when applying SDN to embedded devices. From a hardware perspective, we consider the problems of Wi-Fi chips and Bluetooth, the problems of open flow implementation, SDN controllers, and examples of structural properties. SDN separates the data plane and the control plane, and provides a standardized interface between the two, enabling efficient communication control. It can respond to the security limitations of existing network technologies that are difficult to respond to rapid changes.

• Journal of Navigation and Port Research
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• v.27 no.4
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• pp.443-447
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• 2003

In this work. using 0.2 GaAs modulation doped FET(MODFET), a high performance DBS downconverter MMIC was developed for direct broadcasting satellite (DBS) application. Without LNA, the downconverter MMIC showed a very low noise of 4.8 dB, which is lower by 3 dB than conventional ones. A low LO power of -10 dBm was required for the normal DBS operation of the downconverter MMIC. which reduced the power consumption via a removal of LO amplifier on MMIC. It required only a low power consumption of 175 mW, which is lower than 70 percent of conventional ones. The LO leakage power at IF output was suppressed to a lower level than 30 dBm, which removes a bulky LO rejection filter on a board. The fabricated chip, which include a mixer, If amplifiers. LO rejection filter, and active balun, exhibited a small size of $0.84{\times}0.9\textrm{mm}^2$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.11-11
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• 2010

Thin-film-transistors (TFTs) that can be deposited at low temperature have recently attracted lots of applications such as sensors, solar cell and displays, because of the great flexible electronics and transparent. Transparent and flexible transistors are being required that high mobility and large-area uniformity at low temperature [1]. But, unfortunately most of TFT structures are used to be $SiO_2$ as gate dielectric layer. The $SiO_2$ has disadvantaged that it is required to high driving voltage to achieve the same operating efficiency compared with other high-k materials and its thickness is thicker than high-k materials [2]. To solve this problem, we find lots of high-k materials as $HfO_2$, $ZrO_2$, $SiN_x$, $TiO_2$, $Al_2O_3$. Among the High-k materials, $Al_2O_3$ is one of the outstanding materials due to its properties are high dielectric constant ( ~9 ), relatively low leakage current, wide bandgap ( 8.7 eV ) and good device stability. For the realization of flexible displays, all processes should be performed at very low temperatures, but low temperature $Al_2O_3$ grown by sputtering showed deteriorated electrical performance. Further decrease in growth temperature induces a high density of charge traps in the gate oxide/channel. This study investigated the effect of growth temperatures of ALD grown $Al_2O_3$ layers on the TFT device performance. The ALD deposition showed high conformal and defect-free dielectric layers at low temperature compared with other deposition equipments [2]. After ITO was wet-chemically etched with HCl : $HNO_3$ = 3:1, $Al_2O_3$ layer was deposited by ALD at various growth temperatures or lift-off process. Amorphous InGaZnO channel layers were deposited by rf magnetron sputtering at a working pressure of 3 mTorr and $O_2$/Ar (1/29 sccm). The electrodes were formed with electron-beam evaporated Ti (30 nm) and Au (70 nm) bilayer. The TFT devices were heat-treated in a furnace at $300^{\circ}C$ and nitrogen atmosphere for 1 hour by rapid thermal treatment. The electrical properties of the oxide TFTs were measured using semiconductor parameter analyzer (4145B), and LCR meter.

• Journal of the Korea Concrete Institute
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• v.25 no.3
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• pp.321-329
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• 2013

Recently, the medium-low level radioactive waste from nuclear power plant must be transported from temporary storage to the final repository. Medium-low level radioactive waste, which is composed mainly of the liquid ion exchange resin, has been consolidated with cementitious material in the plastic or iron container. Since cementitious material is brittle, it would generate cracks by impact load during transportation, signifying leakage of radioactive ray. In order to design the safety transporting equipment, there is a need to check the compressive strength of the current waste. However, because it is impossible to measure strength by direct method due to leakage of radioactive ray, we will estimate the strength indirectly by the dynamic modulus of elasticity. Therefore, it must be identified the relationship between of strength and dynamic modulus of elasticity. According to the waste acceptance criteria, the compressive strength of cement based solid is defined as more than 3.44 MPa (500 psi). Compressive strength of the present solid is likely to be significantly higher than this baseline because of continuous hydration of cement during long period. On this background, we have tried to produce the specimens of the 28 day's compressive strength of 3 to 30 MPa having the same material composition as the solid product for the medium-low level radioactive waste, and analyze the relationship between the strength and the dynamic modulus of elasticity. By controling the addition rates of AE agent, we made the mixture containing the ion exchange resin and showing the target compressive strength (3~30 MPa). The dynamic modulus of elasticity of this mixtures is 4.1~10.2 GPa, about 20 GPa lower in the equivalent compressive strength level than that of ordinary concrete, and increasing the discrepancy according to increase strength. The compressive strength and the dynamic modulus of elasticity show the liner relationship.

• Journal of Bio-Environment Control
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• v.26 no.3
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• pp.158-166
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• 2017

The object of this study was to improve tomato seedling quality in low temperature(below 7, $10^{\circ}C$ during night time or daily mean air temperature was $18^{\circ}C$) by application of silicate fertilizer. Six different silicate fertilizer concentrations (8, 16, 32, 64, 128, and 256mM) or water as the control were applied to tomato seedlings twice a week for 20 days. Positive effects were observed in the growth parameters of the seedlings treated with 16 and 32mM silicate fertilizer; the most effective concentration of silicate at which seedlings showed the best performance was 16mM. However, a high concentration of silicate (256mM) caused negative effects on the growth. The transpiration rate decreased alongside with the increase of silicate concentration up to 32mM, possibly due to the increased stomatal diffusive resistance. Silicate stimulated the growth and development of tomato seedlings, resulting in increased growth parameters and root morphology. However, no significant differences were observed among treatment numbers of soil-drenching wuth the silicate (6, 10, or 20 times with 16mM) for 20 days, suggesting that silicate treatment with 6 times may be sufficient to induce the silicate effects. The application of 16mM of silicate fertilizer reduced relative ion leakage and chilling injury during low temperature storage. In addition, the seedlings treated with silicate fertilizer recovered faster than those without silicate treatment after low temperature storage.