• 제목/요약/키워드: low leakage

검색결과 1,336건 처리시간 0.028초

오일의 누출이 토양오염, 식생 및 지하수에 주는 영향에 관한 연구 (A Study on the Effect of. Oil Leakage for Soil Contamination, Plants and Groundwater)

  • 진성기;도덕현;최규홍
    • 한국농공학회지
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    • 제36권1호
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    • pp.141-152
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    • 1994
  • Our experiment investigated the degree of soil contaimination caused by oil leakage. Each soil sample was taken by boring 5, 8m below the test areas, located 5 to 30m from storage tanks at oil stations. According to the results from a series of laboratory tests(both soxhiet extract test and gas chromatograph test), Traces of a light oil were found in all samples except in Dj8, rocky soil and gasoline and petroleum were not detected. We concluded that soil contamination was caused by the corrosion of storage tanks or alternatively by oil overflow caused during the flooding of underground water seeping into the tank during heavy rain fall or the spillage caused by carelessness during lubrication. Old stations without a concrete box enclosing their metal tanks run a greater risk of oil leakage. To research the effect of oil leakage on plant growth and underground water, We examined the results of research conducted overseas. According to these results, when oil leakage occurs, plant growth is repressed and agricultural crops experience low productivity levels. Also, the contamination of underground water can be serious when oil spreads to the aquifer layer. As a result of these problems, to prevent oil leakage and minimize its contaminating effects at oil stations, it is necessary to improve facilities of storage tanks and have the monitoring system of oil leakage.

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Classification of Grid Connected Transformerless PV Inverters with a Focus on the Leakage Current Characteristics and Extension of Topology Families

  • Ozkan, Ziya;Hava, Ahmet M.
    • Journal of Power Electronics
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    • 제15권1호
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    • pp.256-267
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    • 2015
  • Grid-connected transformerless photovoltaic (PV) inverters (TPVIs) are increasingly dominating the market due to their higher efficiency, lower cost, lighter weight, and reduced size when compared to their transformer based counterparts. However, due to the lack of galvanic isolation in the low voltage grid interconnections of these inverters, the PV systems become vulnerable to leakage currents flowing through the grounded star point of the distribution transformer, the earth, and the distributed parasitic capacitance of the PV modules. These leakage currents are prohibitive, since they constitute an issue for safety, reliability, protection coordination, electromagnetic compatibility, and module lifetime. This paper investigates a wide range of multi-kW range power rating TPVI topologies and classifies them in terms of their leakage current attributes. This systematic classification places most topologies under a small number of classes with basic leakage current attributes. Thus, understanding and evaluating these topologies becomes an easy task. In addition, based on these observations, new topologies with reduced leakage current characteristics are proposed in this paper. Furthermore, the important efficiency and cost determining characteristics of converters are studied to allow design engineers to include cost and efficiency as deciding factors in selecting a converter topology for PV applications.

임펄스전류에 의한 배전용 ZnO 피뢰기 소자의 열화특성 (Deterioration Characteristics of ZnO Surge Arrester Blocks for Power Distribution Systems Due to Impulse Currents)

  • 이복희;조성철;양순만
    • 조명전기설비학회논문지
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    • 제27권3호
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    • pp.79-86
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    • 2013
  • In order to analyze the electrical performance of ZnO surge arresters stressed by the combined DC and AC voltages that are generated in DC/AC converter systems, the leakage current properties of ZnO surge arrester blocks deteriorated by impulse currents were investigated. The test specimens were deteriorated by the 8/$20{\mu}s$ impulse current of 2.5kA and the leakage currents flowing into the deteriorated zinc oxide(ZnO) arrester blocks subjected to the combined DC and power frequency AC voltages are measured. As a result, the leakage currents flowing through deteriorated ZnO surge arrester blocks were higher than those flowing through the fine ZnO surge arrester blocks and the larger the injection number of 8/$20{\mu}s$ impulse current of 2.5kA is, the greater the leakage current is. The leakage current-voltage curves(I-V curves) of the fine and deteriorated ZnO surge arrester blocks stressed by the combined DC and AC voltages show significant difference in the low conduction region. Also the cross-over phenomenon is observed at the voltage close to the knee of conduction on plots of I-V curves.

SOI 웨이퍼를 이용한 Top emission 방식 AMOLEDs의 스위칭 소자용 단결정 실리콘 트랜지스터 (Single Crystal Silicon Thin Film Transistor using 501 Wafer for the Switching Device of Top Emission Type AMOLEDs)

  • 장재원;김훈;신경식;김재경;주병권
    • 한국전기전자재료학회논문지
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    • 제16권4호
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    • pp.292-297
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    • 2003
  • We fabricated a single crystal silicon thin film transistor for active matrix organic light emitting displays(AMOLEDs) using silicon on insulator wafer (SOI wafer). Poly crystal silicon thin film transistor(poly-Si TFT) Is actively researched and developed nowsdays for a pixel switching devices of AMOLEDs. However, poly-Si TFT has some disadvantages such as high off-state leakage currents and low field-effect mobility due to a trap of grain boundary in active channel. While single crystal silicon TFT has many advantages such as high field effect mobility, low off-state leakage currents, low power consumption because of the low threshold voltage and simultaneous integration of driving ICs on a substrate. In our experiment, we compared the property of poly-Si TFT with that of SOI TFT. Poly-Si TFT exhibited a field effect mobility of 34 $\textrm{cm}^2$/Vs, an off-state leakage current of about l${\times}$10$\^$-9/ A at the gate voltage of 10 V, a subthreshold slope of 0.5 V/dec and on/off ratio of 10$\^$-4/, a threshold voltage of 7.8 V. Otherwise, single crystal silicon TFT on SOI wafer exhibited a field effect mobility of 750 $\textrm{cm}^2$/Vs, an off-state leakage current of about 1${\times}$10$\^$-10/ A at the gate voltage of 10 V, a subthreshold slope of 0.59 V/dec and on/off ratio of 10$\^$7/, a threshold voltage of 6.75 V. So, we observed that the properties of single crystal silicon TFT using SOI wafer are better than those of Poly Si TFT. For the pixel driver in AMOLEDs, the best suitable pixel driver is single crystal silicon TFT using SOI wafer.

PDMS 기능성 박막을 이용한 적은 게이트 누설 전류 특성을 가지는 유기트랜지스터의 제작 (Fabrication of Organic Field-Effect Transistors with Low Gate Leakage Current by a Functional Polydimethylsiloxane Layer)

  • 김성진
    • 한국진공학회지
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    • 제18권2호
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    • pp.147-150
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    • 2009
  • Polydimethylsiloxane (PDMS) 기능성 박막을 도입하여 적은 게이트 누설 전류 특성을 가지는 유기트랜지스터를 제작하고 평가하였다. UV/ozone 처리를 하여 PDMS 표면에 위치한 소수성의 메틸 그룹의 화학적 결합을 끊어 친수성 실리콘 산화막 성질로 표면을 변화시키고 선택적인 펜타신 증착을 유도하였다. Off 전압상태 ($V_g-V_t>0$)에서 게이트 전압에 의해 기인하는 누설 전류는 선형영역 ($V_d=-5\;V$)과 포화영역 ($V_d=-30\;V$)에서 ${\sim}10^{-10}$ A의 값을 보여주며 기존의 트랜지스터 보다 개선된 누설 전류 특성을 나타내었다.

액체수소용 초저온 고압 피스톤 펌프의 기밀성 향상에 관한 기초연구 (A Study on Air-tightness of High Pressure Liquid Hydrogen Pumping System at the Low Temperature)

  • 이종구;이종민;이종태
    • 한국수소및신에너지학회논문집
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    • 제24권4호
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    • pp.302-310
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    • 2013
  • As an initial step to develop a liquid hydrogen pump of piston type operated under cryogenic and high pressure, leakage and piston head shape for the piston pump were discussed with temperature and pressure. As the results, the leakage depended on correlation among density, viscosity, clearance area by the low temperature. In order to reduce the leakage, it was found that the air-tightness can be improved by minimizing contact surface between piston and cylinder, and also increasing pressure in-cylinder can reduce piston clearance. Among the proposed piston shapes, D type piston shape had the most air-tightness. D type piston had smaller contact surface than other piston shape and easier expansion of cup shape by pressure. The leakage of D type piston shape was found about 7%, compared with A type piston shape. But it was required that analyze about vapor lock by friction and wear resistance.

누설변압기 1차측의 스위칭 제어에 의한 펄스형 $CO_2$레이저에 관한 연구 (A Study on the Pulsed $CO_2$ Laser by the Switching Control of Leakage Transformer Primary)

  • 정현주;이동훈;김희제
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제49권9호
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    • pp.541-545
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    • 2000
  • We propose a pulsed $CO_2$laser below 30W by the AC(60Hz) switching control of leakage transformer primary which has some advantages of cost and size compared to a typical pulsed power supply. Pulse repetition rate is adjusted from 5 Hz to 60 to Hz control laser output. In this laser a low voltage open loop control for high voltage pulse discharge circuit is employed to aviod the Hv sampling or switching and high voltage leakage transformer is used to convert low voltage pulse rectified from AC to high voltage one. A ZCS(Zero Crossing Switch) circuit and a PIC(programble one-chip microprocessor are used to control gate signal of SCR precisely. The pulse repetition rate is limited by 60Hz due to the frequency of AC line and a high leadkage inductance. The maximum laser output was about 23 W at pulse repetition rate of 60Hz total gas mixture of $CO_2$ : $N_2$ : He=1: 9: 15 and total pressure of 18 Torr

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The Effect of Transformer Leakage Inductance on the Steady State Performance of Push-pull based Converter with Continuous Current

  • Chen, Qian;Zheng, Trillion Q.;Li, Yan;Shao, Tiancong
    • Journal of Power Electronics
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    • 제13권3호
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    • pp.349-361
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    • 2013
  • As a result of the advantages such as high efficiency, continuous current and high stability margin, push-pull converter with continuous current (PPCWCC) is competitive for battery discharge regulator (BDR) which plays an important role in power conditioning unit (PCU). Leakage inductance yields current spike in low-ripple current of PPCWCCs. The operating modes are added due to leakage inductance. Therefore the steady state performance is affected, which is embodied in the spike of low-ripple current. PPCWCCs which are suitable for BDR can be separated into three types by current spike characteristics. Three representative topologies IIs1, IIcb2 and Is3 are analyzed in order to investigate the factors on the magnitude and duration of spike. Equivalent current sampling method (ECSM) which eliminates the sampling time delay and achieves excellent dynamic performance is adopted to prevent the spike disturbance on current sampling. However, ECSM reduces the sampling accuracy and telemetry accuracy due to neglecting the spike. In this paper, ECSM used in PPCWCCs is summarized. The current sampling error is analyzed in quality and quantity, which provides the foundation for offsetting and enhancing the telemetry accuracy. Finally, current sampling error rate of three topologies is compared by experiment results, which verify the theoretical analysis.

관점지향 프로그래밍을 적용한 실행시간 누설전력 관리 모델 설계 (Design of a management model for runtime leakage power using Aspect-Oriented Programming)

  • 김영민;이찬근
    • 소프트웨어공학소사이어티 논문지
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    • 제24권1호
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    • pp.27-33
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    • 2011
  • 최근 임베디드 시스템이 발전함에 따라서 저 전력에 대한 요구가 중요한 관심사가 되었다. 하지만 전력 관리 코드가 핵심 관심사 코드와 횡단 결합되어 있기 때문에 가독성과 유지보수성을 저하시키는 원인이 된다. 본 연구에서는 실행시간 동안 발생하는 누설전력을 감소시키기 위한 디바이스 사용에 집중한 전력관리 모델을 제시하고, 이러한 전력관리 모델에 관점지향 프로그래밍을 적용하여 전력관리 코드를 핵심관심사 코드와 분리한다. 마지막으로 제시한 전력관리 모델을 이론적인 방법과 실험적인 방법으로 평가한다.

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변압기 저압측 중성점 접지선의 누설전류 통합 감시에 관한 연구 (A Study on the Integrated Monitoring of a Leakage Current of the Grounding Wire of Neutral Point of the Low Voltage Side of Transformer)

  • 홍순석;박준열;이정은;최경한
    • 조명전기설비학회논문지
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    • 제24권5호
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    • pp.106-113
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    • 2010
  • 누설전류를 그대로 방치할 경우 전기로 인한 감전, 화재 등 여러 가지 재해요인이 될 수 있으므로 상시감시가 필요하다. 그러나 변전소 관리를 무인화 또는 순회점검으로 실시하는 곳이 대부분이므로 상시 감시에 어려움이 있어 사고발생시 원인을 즉시 제거하지 못하고 누설전류에 의해 비상발전기의 OCGR이 작동되어 ACB가 차단될 경우 비상발전기의 가동이 중지되는 문제점이 있다. 이러한 문제점을 방지하기 위해 변압기 저압측 중성점 접지선으로 귀환하는 누설전류를 실시간 모니터링할 수 있는 변압기 누설전류 통합 감시 장치를 제안하였다. 따라서 본 논문에서는 저압전로와 기기의 절연이 열화 또는 파괴되어 흐르는 누설전류의 영향을 시뮬레이션을 통해 알아보고 사례연구를 통해 통합 감시 장치의 우수성을 검증하였다.