• 제목/요약/키워드: lon Implantation

검색결과 2건 처리시간 0.026초

이온주입법에 의한 폴리이미드박막의 표면 개질에 대한 연구 (A Study on the Surface Modification of Polyimide Film by lon Implantation)

  • 김종택;이덕출
    • 한국전기전자재료학회논문지
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    • 제11권4호
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    • pp.293-297
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    • 1998
  • The influence of ion implantation on surface properties of polymers was studied. We investigated microhardness, friction, wear and wettablility of polyimide. Energies of 50, 200keV were used with doses range from $1{\times}10^{13} to 1{\times}10^{16} [ions/cm^2]$. The implanted ion species were B, N and Ar. The microhardness of polyimide was increased after implantation for doses of $1{\times}10^{15}\; [ions/cm^2]$. A reduction of the friction coefficient was in most case correlated with a reduction of wear. The contact angles of water for $B^+,N^+$ implanted polyimide decreased from $76^{\circ}C$ to zero, as the fluencies increased at energies of 50 and 200 KeV. However, the contact angle of Ar ion implanted polyimide did not change under ambient room conditions even if the time elapsed. SEM measurement was performed to characterize the modified surface layer.

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Boron 이온이 주입된 GaAs의 열처리에 따른 발광특성에 관한 연구 (A Study on the Photoluminescence of Boron lon Implanted GaAs)

  • 최현태;손정식;배인호
    • 한국전기전자재료학회논문지
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    • 제11권9호
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    • pp.700-704
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    • 1998
  • In this paper, the optical properties of boron ion implanted GaAs were investigated by photoluminescence(PL) measurements. The implantations were preformed at room temperature with the energy of 150 eV. The range of implanted dose was $10^{12}~10^{15} ions/cm^2$. The boron implanted samples were annealed between $450^{\circ}C$ and $800^{\circ}C$ for 20 minutes. The crystallinity of low dosed samples were increased with increasing annealing temperature up to $700^{\circ}C$ while that of the high dosed($10^{15} ions/cm^2$) was almost same. From the samples with dose of $10^{14}~10^{15} ions/cm^2$, two emission bands were observed at 1.438 eV (B1) and 1.459 eV (B2) after the thermal treatment. These emission bands seems to be attributed to the $B_{Ga}$-defect complex.

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