• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.4
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• pp.293-297
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• 1998

The influence of ion implantation on surface properties of polymers was studied. We investigated microhardness, friction, wear and wettablility of polyimide. Energies of 50, 200keV were used with doses range from $1{\times}10^{13} to 1{\times}10^{16} [ions/cm^2]$. The implanted ion species were B, N and Ar. The microhardness of polyimide was increased after implantation for doses of $1{\times}10^{15}\; [ions/cm^2]$. A reduction of the friction coefficient was in most case correlated with a reduction of wear. The contact angles of water for $B^+,N^+$ implanted polyimide decreased from $76^{\circ}C$ to zero, as the fluencies increased at energies of 50 and 200 KeV. However, the contact angle of Ar ion implanted polyimide did not change under ambient room conditions even if the time elapsed. SEM measurement was performed to characterize the modified surface layer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.9
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• pp.700-704
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• 1998

In this paper, the optical properties of boron ion implanted GaAs were investigated by photoluminescence(PL) measurements. The implantations were preformed at room temperature with the energy of 150 eV. The range of implanted dose was $10^{12}~10^{15} ions/cm^2$. The boron implanted samples were annealed between $450^{\circ}C$ and $800^{\circ}C$ for 20 minutes. The crystallinity of low dosed samples were increased with increasing annealing temperature up to $700^{\circ}C$ while that of the high dosed($10^{15} ions/cm^2$) was almost same. From the samples with dose of $10^{14}~10^{15} ions/cm^2$, two emission bands were observed at 1.438 eV (B1) and 1.459 eV (B2) after the thermal treatment. These emission bands seems to be attributed to the $B_{Ga}$-defect complex.